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1. 发明授权

US09234278B2 CVD conformal vacuum/pumping guiding design 有权
标题翻译： CVD保形真空/抽吸引导设计
公开(公告)号：US09234278B2
公开(公告)日：2016-01-12
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译：本公开涉及一种用于引导室内的气体流动的引导元件。引导元件包括结构，一个或多个入口，出口和运输区域。一个或多个入口形成在结构的第一侧上。入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。出口位于结构的第二侧，与结构的第一侧相对。出口具有根据去除率选择的出口尺寸。运输区域在结构内，并将进口连接或连接到出口。

2. 发明申请

US20130189851A1 CVD Conformal Vacuum/Pumping Guiding Design 有权
标题翻译： CVD保形真空/泵送导向设计
公开(公告)号：US20130189851A1
公开(公告)日：2013-07-25
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31 , C23C16/50 , B65D35/38 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译：本公开涉及一种用于引导室内的气体流动的引导元件。引导元件包括结构，一个或多个入口，出口和运输区域。一个或多个入口形成在结构的第一侧上。入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。出口位于结构的第二侧，与结构的第一侧相对。出口具有根据去除率选择的出口尺寸。运输区域在结构内，并将进口连接或连接到出口。

3. 发明申请

US20130149871A1 CHEMICAL VAPOR DEPOSITION FILM PROFILE UNIFORMITY CONTROL 有权
标题翻译：化学蒸气沉积膜型材均匀性控制
公开(公告)号：US20130149871A1
公开(公告)日：2013-06-13
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

4. 发明授权

US08916480B2 Chemical vapor deposition film profile uniformity control 有权
标题翻译：化学气相沉积膜轮廓均匀性控制
公开(公告)号：US08916480B2
公开(公告)日：2014-12-23
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

5. 发明授权

US09976215B2 Semiconductor film formation apparatus and process 有权
公开(公告)号：US09976215B2
公开(公告)日：2018-05-22
申请号：US13460884
申请日：2012-05-01
申请人： You-Hua Chou , Chih-Tsung Lee , Shu-Fen Wu , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Shu-Fen Wu , Chin-Hsiang Lin
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/5096
摘要： An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.

6. 发明申请

US20130201596A1 Electrostatic Chuck with Multi-Zone Control 有权
标题翻译：带多区域控制的静电卡盘
公开(公告)号：US20130201596A1
公开(公告)日：2013-08-08
申请号：US13364463
申请日：2012-02-02
申请人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

7. 发明授权

US09287154B2 UV curing system for semiconductors 有权
标题翻译：半导体UV固化系统
公开(公告)号：US09287154B2
公开(公告)日：2016-03-15
申请号：US13486025
申请日：2012-06-01
申请人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/677 , H01L21/68 , H01L21/67 , H01L21/3105
CPC分类号： H01L21/6776 , H01L21/3105 , H01L21/67115
摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
摘要翻译：公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

8. 发明授权

US08902561B2 Electrostatic chuck with multi-zone control 有权
标题翻译：静电吸盘多区控制
公开(公告)号：US08902561B2
公开(公告)日：2014-12-02
申请号：US13364463
申请日：2012-02-02
申请人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

9. 发明授权

US09026241B2 Closed loop control for reliability 有权
标题翻译：闭环控制可靠性
公开(公告)号：US09026241B2
公开(公告)日：2015-05-05
申请号：US13404676
申请日：2012-02-24
申请人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
发明人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G05B9/03
CPC分类号： G05B9/03 , G05B23/0237 , G05B2219/37533 , G05B2219/45031
摘要： The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.
摘要翻译：本公开涉及具有多个传感器的半导体工具监视系统，其被配置为同时且独立地监视半导体制造工具的处理条件。在一些实施例中，所公开的工具监控系统包括被配置为监视半导体制造工具的一个或多个处理条件并基于此产生第一监视响应的第一传感器系统。冗余的第二传感器系统被配置为同时监视制造工具的一个或多个处理条件并且基于此产生第二监视响应。比较元件被配置为比较第一和第二监测响应，以及如果响应彼此偏离（例如，具有大于阈值的偏差）以产生警告信号。通过比较第一和第二监测响应，可以实时检测传感器系统中的误差，从而防止产量损失。

10. 发明申请

US20130226327A1 NOVEL CLOSED LOOP CONTROL FOR RELIABILITY 有权
标题翻译：新的闭环控制可靠性
公开(公告)号：US20130226327A1
公开(公告)日：2013-08-29
申请号：US13404676
申请日：2012-02-24
申请人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
发明人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G06F15/00
CPC分类号： G05B9/03 , G05B23/0237 , G05B2219/37533 , G05B2219/45031
摘要： The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.
摘要翻译：本公开涉及具有多个传感器的半导体工具监视系统，其被配置为同时且独立地监视半导体制造工具的处理条件。在一些实施例中，所公开的工具监控系统包括被配置为监视半导体制造工具的一个或多个处理条件并基于此产生第一监视响应的第一传感器系统。冗余的第二传感器系统被配置为同时监视制造工具的一个或多个处理条件并且基于此产生第二监视响应。比较元件被配置为比较第一和第二监测响应，以及如果响应彼此偏离（例如，具有大于阈值的偏差）以产生警告信号。通过比较第一和第二监测响应，可以实时检测传感器系统中的误差，从而防止产量损失。

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