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1. 发明授权

US09026241B2 Closed loop control for reliability 有权
标题翻译：闭环控制可靠性
公开(公告)号：US09026241B2
公开(公告)日：2015-05-05
申请号：US13404676
申请日：2012-02-24
申请人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
发明人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G05B9/03
CPC分类号： G05B9/03 , G05B23/0237 , G05B2219/37533 , G05B2219/45031
摘要： The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.
摘要翻译：本公开涉及具有多个传感器的半导体工具监视系统，其被配置为同时且独立地监视半导体制造工具的处理条件。在一些实施例中，所公开的工具监控系统包括被配置为监视半导体制造工具的一个或多个处理条件并基于此产生第一监视响应的第一传感器系统。冗余的第二传感器系统被配置为同时监视制造工具的一个或多个处理条件并且基于此产生第二监视响应。比较元件被配置为比较第一和第二监测响应，以及如果响应彼此偏离（例如，具有大于阈值的偏差）以产生警告信号。通过比较第一和第二监测响应，可以实时检测传感器系统中的误差，从而防止产量损失。

2. 发明申请

US20130226327A1 NOVEL CLOSED LOOP CONTROL FOR RELIABILITY 有权
标题翻译：新的闭环控制可靠性
公开(公告)号：US20130226327A1
公开(公告)日：2013-08-29
申请号：US13404676
申请日：2012-02-24
申请人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
发明人： Wen-Cheng Yang , Chung-En Kao , You-Hua Chou , Ming-Chih Tsai , Chen-Chia Chiang , Bo-Hung Lin , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G06F15/00
CPC分类号： G05B9/03 , G05B23/0237 , G05B2219/37533 , G05B2219/45031
摘要： The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.
摘要翻译：本公开涉及具有多个传感器的半导体工具监视系统，其被配置为同时且独立地监视半导体制造工具的处理条件。在一些实施例中，所公开的工具监控系统包括被配置为监视半导体制造工具的一个或多个处理条件并基于此产生第一监视响应的第一传感器系统。冗余的第二传感器系统被配置为同时监视制造工具的一个或多个处理条件并且基于此产生第二监视响应。比较元件被配置为比较第一和第二监测响应，以及如果响应彼此偏离（例如，具有大于阈值的偏差）以产生警告信号。通过比较第一和第二监测响应，可以实时检测传感器系统中的误差，从而防止产量损失。

3. 发明申请

US20130199926A1 Novel Multi Coil Target Design 有权
标题翻译：新型多线圈目标设计
公开(公告)号：US20130199926A1
公开(公告)日：2013-08-08
申请号：US13366805
申请日：2012-02-06
申请人： Ming-Chih Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
发明人： Ming-Chih Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
IPC分类号： C23C14/34
CPC分类号： C23C14/351 , H01J37/3211 , H01J37/34 , H05H1/46 , H05H2001/4667
摘要： In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).
摘要翻译：在一些实施例中，本公开涉及一种被配置为在工件周围形成对称等离子体分布的等离子体处理系统。在一些实施例中，等离子体处理系统包括围绕处理室对称定位的多个线圈。当向线圈提供电流时，从分离的线圈发出分离的用于电离目标原子的磁场。单独的磁场对线圈内的离子起作用以在线圈的内部形成等离子体。此外，单独的磁场在线圈之间彼此重叠，以在线圈的外部形成等离子体。因此，所公开的等离子体处理系统可以形成等离子体，该等离子体以高度均匀性（即，没有死空间）沿着工件的周边连续地延伸。

4. 发明授权

US09279179B2 Multi coil target design 有权
标题翻译：多线圈目标设计
公开(公告)号：US09279179B2
公开(公告)日：2016-03-08
申请号：US13366805
申请日：2012-02-06
申请人： Ming-Chin Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
发明人： Ming-Chin Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
IPC分类号： C23C14/35 , H05H1/46 , H01J37/32 , H01J37/34
CPC分类号： C23C14/351 , H01J37/3211 , H01J37/34 , H05H1/46 , H05H2001/4667
摘要： In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).
摘要翻译：在一些实施例中，本公开涉及一种被配置为在工件周围形成对称等离子体分布的等离子体处理系统。在一些实施例中，等离子体处理系统包括围绕处理室对称定位的多个线圈。当向线圈提供电流时，从分离的线圈发出分离的用于电离目标原子的磁场。单独的磁场对线圈内的离子起作用以在线圈的内部形成等离子体。此外，单独的磁场在线圈之间彼此重叠，以在线圈的外部形成等离子体。因此，所公开的等离子体处理系统可以形成等离子体，该等离子体以高度均匀性（即，没有死空间）沿着工件的周边连续地延伸。

5. 发明授权

US09976215B2 Semiconductor film formation apparatus and process 有权
公开(公告)号：US09976215B2
公开(公告)日：2018-05-22
申请号：US13460884
申请日：2012-05-01
申请人： You-Hua Chou , Chih-Tsung Lee , Shu-Fen Wu , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Shu-Fen Wu , Chin-Hsiang Lin
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/5096
摘要： An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.

6. 发明授权

US09234278B2 CVD conformal vacuum/pumping guiding design 有权
标题翻译： CVD保形真空/抽吸引导设计
公开(公告)号：US09234278B2
公开(公告)日：2016-01-12
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译：本公开涉及一种用于引导室内的气体流动的引导元件。引导元件包括结构，一个或多个入口，出口和运输区域。一个或多个入口形成在结构的第一侧上。入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。出口位于结构的第二侧，与结构的第一侧相对。出口具有根据去除率选择的出口尺寸。运输区域在结构内，并将进口连接或连接到出口。

7. 发明申请

US20130189851A1 CVD Conformal Vacuum/Pumping Guiding Design 有权
标题翻译： CVD保形真空/泵送导向设计
公开(公告)号：US20130189851A1
公开(公告)日：2013-07-25
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31 , C23C16/50 , B65D35/38 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译：本公开涉及一种用于引导室内的气体流动的引导元件。引导元件包括结构，一个或多个入口，出口和运输区域。一个或多个入口形成在结构的第一侧上。入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。出口位于结构的第二侧，与结构的第一侧相对。出口具有根据去除率选择的出口尺寸。运输区域在结构内，并将进口连接或连接到出口。

8. 发明申请

US20130149871A1 CHEMICAL VAPOR DEPOSITION FILM PROFILE UNIFORMITY CONTROL 有权
标题翻译：化学蒸气沉积膜型材均匀性控制
公开(公告)号：US20130149871A1
公开(公告)日：2013-06-13
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

9. 发明授权

US08916480B2 Chemical vapor deposition film profile uniformity control 有权
标题翻译：化学气相沉积膜轮廓均匀性控制
公开(公告)号：US08916480B2
公开(公告)日：2014-12-23
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

10. 发明授权

US08709528B2 Wafer processing method and system using multi-zone chuck 有权
标题翻译：晶圆加工方法和系统采用多区夹头
公开(公告)号：US08709528B2
公开(公告)日：2014-04-29
申请号：US13338885
申请日：2011-12-28
申请人： Nai-Han Cheng , Chi-Ming Yang , You-Hua Chou , Kuo-Sheng Chuang , Chin-Hsiang Lin
发明人： Nai-Han Cheng , Chi-Ming Yang , You-Hua Chou , Kuo-Sheng Chuang , Chin-Hsiang Lin
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , C23C14/50 , C23C14/54 , C23C16/4582 , C23C16/52 , H01L21/67098 , H01L21/67288 , H01L21/6831 , Y10T29/49998
摘要： In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.
摘要翻译：在晶片处理方法和晶片处理系统中，测量晶片背面的第一特性。晶片的背面被支撑在具有可控夹紧力的多个区域的多区域卡盘上。通过根据区域中的第一属性的测量值控制相应区域中的夹紧力将晶片固定到多区域卡盘。

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