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1. 发明授权

US5254439A Light-sensitive polymer, method for preparing the same and method for forming patterns 失效
标题翻译：光敏聚合物，其制备方法和形成图案的方法
公开(公告)号：US5254439A
公开(公告)日：1993-10-19
申请号：US854696
申请日：1992-03-20
申请人： Yoshiyuki Tani , Masayuki Endou , Kazufumi Ogawa , Yasuhisa Tanaka , Toshinobu Ishihara , Tohru Kubota
发明人： Yoshiyuki Tani , Masayuki Endou , Kazufumi Ogawa , Yasuhisa Tanaka , Toshinobu Ishihara , Tohru Kubota
IPC分类号： C08G77/48 , C08G77/60 , G03F7/075 , G03F7/30
CPC分类号： C08G77/48 , C08G77/60 , G03F7/0754 , G03F7/0757 , Y10S430/146
摘要： There is disclosed a polymer having linear --Si--O--Si-- bonds and --Si--Si--Si-- bonds, or polysilane bonds that are greater than trisilane bonds, sensitive to far ultraviolet rays. The polymer is prepared by polymerizing a dichlorosiloxane alone or with at least one dichlorosilane in an inert solvent in the presence of sodium. The polymer undergoes oxidation with oxygen plasma to form SiO.sub.2 resistant to oxygen dry etching, exhibits absorption peaks only in far ultraviolet, and is suitable for preparing a single layered resist or an upper resist of a two-layered system.
摘要翻译：公开了具有对远紫外线敏感的线性-Si-O-Si键和-Si-Si-Si键或大于丙硅烷键的聚硅烷键的聚合物。聚合物是通过在惰性溶剂中在钠的存在下单独或与至少一种二氯硅烷聚合二氯硅烷来制备的。聚合物用氧等离子体进行氧化以形成耐氧干蚀刻的SiO 2，仅在远紫外线下显示吸收峰，并且适用于制备双层系统的单层抗蚀剂或上抗蚀剂。

2. 发明授权

US5126419A Light-sensitive polymer, method for preparing the same andmethod for forming patterns 失效
标题翻译：光敏聚合物，其制备方法和形成图案的方法
公开(公告)号：US5126419A
公开(公告)日：1992-06-30
申请号：US622152
申请日：1990-12-03
申请人： Yoshiyuki Tani , Masayuki Endou , Kazufumi Ogawa , Yasuhisa Tanaka , Toshinobu Ishihara , Tohru Kubota
发明人： Yoshiyuki Tani , Masayuki Endou , Kazufumi Ogawa , Yasuhisa Tanaka , Toshinobu Ishihara , Tohru Kubota
IPC分类号： C08G77/48 , C08G77/60 , G03F7/075
CPC分类号： G03F7/0754 , C08G77/48 , C08G77/60 , G03F7/0757
摘要： A polymer having linear --Si--O--Si-- bonds and --Si--Si--Si-- bonds, or polysilane bonds more than trisilane bonds, sensitive to far ultraviolet rays. The light-sensitive polymer can be prepared by copolymerizing a dichlorodisiloxane and a dichlorosilane in an inert solvent in the presence of sodium. The polymer undergoes oxidation with oxygen plasma to form SiO.sub.2 resistant to oxygen dry etching, exhibits absorption peaks only in far ultraviolet and is suitable for preparing a single layered resist or an upper resist of a two layered resist system.
摘要翻译：具有线性-Si-O-Si-键和-Si-Si-Si-键的聚合物，或聚硅烷键多于丙硅烷键，对远紫外线敏感。感光性聚合物可以通过在惰性溶剂中在钠的存在下使二氯二硅氧烷和二氯硅烷共聚来制备。聚合物用氧等离子体进行氧化以形成耐氧干蚀刻的SiO 2，仅在远紫外线下表现出吸收峰，并且适用于制备双层抗蚀剂体系的单层抗蚀剂或上抗蚀剂。

3. 发明申请

US20100055626A1 METHOD FOR PATTERN FORMATION 审中-公开
标题翻译：模式形成方法
公开(公告)号：US20100055626A1
公开(公告)日：2010-03-04
申请号：US12613165
申请日：2009-11-05
申请人： Masayuki Endou , Masaru Sasago
发明人： Masayuki Endou , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/2022 , G03F7/09 , G03F7/203
摘要： A resist film made of a chemically amplified positive resist is formed on a substrate. On the resist film, a light absorbing film containing a fluoropolymer which is alkali-soluble and has an aromatic ring is formed. Thereafter, first pattern exposure is performed by irradiating the resist film through the light absorbing film with first exposure light containing extreme ultraviolet light having passed through a first mask. Thereafter, second pattern exposure is performed by irradiating the resist film through the light absorbing film with exposure light having passed through a second mask. After the substrate is heated, the resist film is developed to remove the light absorbing film and form a resist pattern made of the resist film. An opening portion of the second mask is formed in a region corresponding to a non-opening portion of the first mask in which an opening portion is not formed.
摘要翻译：在基板上形成由化学放大型正性抗蚀剂制成的抗蚀剂膜。在抗蚀剂膜上形成含有碱溶性且具有芳环的含氟聚合物的吸光膜。此后，通过使含有通过第一掩模的极紫外光的第一曝光光通过光吸收膜照射抗蚀剂膜，进行第一图案曝光。此后，通过经过第二掩模的曝光光通过光吸收膜照射抗蚀剂膜来进行第二图案曝光。在加热基板之后，将抗蚀剂膜显影以除去光吸收膜并形成由抗蚀剂膜制成的抗蚀剂图案。第二掩模的开口部形成在与不形成开口部的第一掩模的非开口部对应的区域中。

4. 发明授权

US07998658B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US07998658B2
公开(公告)日：2011-08-16
申请号：US12767369
申请日：2010-04-26
申请人： Masayuki Endou , Masaru Sasago
发明人： Masayuki Endou , Masaru Sasago
IPC分类号： G03G5/00 , G03F7/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0274 , H01L21/033 , H01L21/0337 , Y10S427/102 , Y10S430/143 , Y10S430/146
摘要： A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.
摘要翻译：在基板上形成第一抗蚀剂膜，并且执行第一图案曝光，使得通过第一掩模用曝光光照射第一抗蚀剂膜。然后，第一抗蚀剂膜被显影，从而形成第一抗蚀剂图案从第一抗蚀剂膜。随后，将纳米碳材料附着到第一抗蚀剂图案的表面，然后在包括第一抗蚀剂图案的基板上形成第二抗蚀剂膜。此后，进行第二图案曝光，使得第二抗蚀剂膜通过第二掩模用曝光光照射。然后，使第二抗蚀剂膜显影，从而在第二抗蚀剂膜中形成第二抗蚀剂图案。

5. 发明授权

US08067148B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US08067148B2
公开(公告)日：2011-11-29
申请号：US12780597
申请日：2010-05-14
申请人： Masayuki Endou , Masaru Sasago
发明人： Masayuki Endou , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/2041
摘要： A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size.
摘要翻译：在基板上形成含有光致酸发生剂的正型抗蚀剂膜。然后，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。此后，对经受图案曝光的抗蚀剂膜进行第一次加热。加热后，对抗蚀剂膜进行第一次显影，从而形成第一抗蚀剂图案。随后，将第一抗蚀剂图案暴露于含有热酸发生剂的溶液中，既不含聚合物也不含交联剂。曝光后，对第一抗蚀剂图案进行第二次加热。然后在第一抗蚀剂图案上进行第二显影，从而形成由具有减小尺寸的第一抗蚀剂图案制成的第二抗蚀剂图案。

6. 发明申请

US20110177454A1 RESIST MATERIAL AND PATTERN FORMATION METHOD USING THE RESIST MATERIAL 审中-公开
标题翻译：使用材料的耐腐蚀材料和图案形成方法
公开(公告)号：US20110177454A1
公开(公告)日：2011-07-21
申请号：US13079423
申请日：2011-04-04
申请人： Masayuki Endou , Masaru Sasago
发明人： Masayuki Endou , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045
摘要： First, a resist film is formed on a substrate from a resist material including cyclic oligomer which does not contain any acid-labile group, is soluble in alkali, and is a trimer or a higher multimer; a molecular compound containing an acid-labile group; a photoacid generator; and no polymer. Then, pattern exposure is performed by selectively irradiating the formed resist film with exposure light of extreme ultraviolet. The resist film after the pattern exposure is heated, and then, the heated resist film is developed to form a resist pattern from the resist film.
摘要翻译：首先，从包含不含酸不稳定基团的环状低聚物的抗蚀剂材料在基板上形成抗蚀剂膜，可溶于碱，并且为三聚体或更高级的多聚体; 含有酸不稳定基团的分子化合物; 光致酸发生器; 没有聚合物。然后，通过用极紫外线的曝光光选择性地照射形成的抗蚀剂膜来进行图案曝光。对图案曝光后的抗蚀剂膜进行加热，然后将加热的抗蚀剂膜显影，从抗蚀剂膜形成抗蚀剂图案。

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