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1. 发明授权

US4168512A Optical system for an image pickup device 失效
标题翻译：用于图像拾取装置的光学系统
公开(公告)号：US4168512A
公开(公告)日：1979-09-18
申请号：US819051
申请日：1977-07-26
申请人： Yoshitoshi Ito , Noriaki Honma , Katsumi Takami , Shusaku Nagahara , Akira Hashimoto
发明人： Yoshitoshi Ito , Noriaki Honma , Katsumi Takami , Shusaku Nagahara , Akira Hashimoto
IPC分类号： H04N5/225 , G02B5/00 , G02B5/20 , G02B27/46 , G02B27/50 , H04N5/72
CPC分类号： G02B5/205 , G02B5/005
摘要： In an optical system which is mounted on and used with an image pickup device for observing an object including a high brightness area therein, a pinhole is provided between the object and an imaging lens for separating the paths of the light rays from respective points of the object, and a filter which attenuates light from the high brightness area of the object which is separated by the pinhole.
摘要翻译：在安装在用于观察其中包括高亮度区域的物体的图像拾取装置上并与其一起使用的光学系统中，在物体和成像透镜之间设置有针孔，用于将光线的路径从物体和滤光器，其使来自被针孔分离的物体的高亮度区域的光衰减。

2. 发明授权

US4876458A Apparatus for measuring particles in liquid 失效
标题翻译：用于测量液体中的颗粒的装置
公开(公告)号：US4876458A
公开(公告)日：1989-10-24
申请号：US250615
申请日：1988-09-29
申请人： Kazuo Takeda , Yoshitoshi Ito , Noriaki Honma , Chusuke Munakata
发明人： Kazuo Takeda , Yoshitoshi Ito , Noriaki Honma , Chusuke Munakata
IPC分类号： G01N15/14 , G01N21/53
CPC分类号： G01N15/1459 , G01N21/53
摘要： An apparatus for measuring particles in a liquid, with the apparatus including an arrangement for allowing a sample liquid to flow out from a nozzle into a gas in a stream, an arrangement for radiating light into the sample liquid stream coaxially with the axis of the stream, and an arrangement for collecting ways of light scattered by particles contained in the sample liquid stream at a point outside and by a side of the sample liquid stream and then detecting the collective light rays.
摘要翻译：一种用于测量液体中的颗粒的装置，该装置包括用于允许样品液体从喷嘴流出到流中的气体的装置，用于将光与流的轴线同轴地照射到样品液体流中的装置以及用于收集样品液体流中包含的颗粒在样品液体流的外部和侧面的点散射的光的方式，然后检测集合光线的布置。

3. 发明授权

US4581578A Apparatus for measuring carrier lifetimes of a semiconductor wafer 失效
标题翻译：用于测量半导体晶片的载体寿命的装置
公开(公告)号：US4581578A
公开(公告)日：1986-04-08
申请号：US575691
申请日：1984-01-31
申请人： Noriaki Honma , Chusuke Munakata
发明人： Noriaki Honma , Chusuke Munakata
IPC分类号： G01N21/00 , G01R31/28 , H01L21/66 , G01R31/26
CPC分类号： H01L22/00 , G01R31/2831 , Y10S136/29
摘要： A carrier lifetime measuring apparatus according to the present invention has a construction wherein a first photon beam of a wavelength capable of rendering the optical absorption coefficient of a semiconductor sample very small when the semiconductor sample having a potential barrier in the vicinity of its surface is irradiated with the radiation, and a second photon beam of a wavelength capable of rendering the optical absorption coefficient very large are respectively chopped to alternately irradiate the identical place of the semiconductor sample with the chopped beams; first and second photovoltages which are generated in the semiconductor sample by these photon beams are detected by capacitance coupling; and the ratio between a first amplitude variation and a second amplitude variation is obtained from the amplitudes of the detected photovoltages; thereby to evaluate a minority carrier lifetime in the semiconductor sample.
摘要翻译：根据本发明的载体寿命测量装置具有这样的结构，其中当辐射在其表面附近具有势垒的半导体样品时，能够使半导体样品的光吸收系数变得非常小的波长的第一光子束并且能够使光吸收系数非常大的波长的第二光子束分别切碎以交替地用切碎的光束照射半导体样品的相同位置; 通过这些光子束在半导体样品中产生的第一和第二光伏被电容耦合检测; 并且从检测到的光电压的振幅获得第一振幅变化和第二幅度变化之间的比率; 从而评估半导体样品中的少数载流子寿命。

4. 发明授权

US06639327B2 Semiconductor member, semiconductor device and manufacturing methods thereof 失效
公开(公告)号：US06639327B2
公开(公告)日：2003-10-28
申请号：US09899257
申请日：2001-07-06
申请人： Kazutaka Momoi , Takao Yonehara , Nobuhiko Sato , Masataka Ito , Noriaki Honma
发明人： Kazutaka Momoi , Takao Yonehara , Nobuhiko Sato , Masataka Ito , Noriaki Honma
IPC分类号： H01L2358
CPC分类号： H01L21/76251 , H01L21/3226 , H01L21/764
摘要： In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing the microgaps between two substrates.

5. 发明授权

US4563642A Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction 失效
标题翻译：用于非连续测量半导体晶片特性的装置
公开(公告)号：US4563642A
公开(公告)日：1986-01-07
申请号：US432805
申请日：1982-10-05
申请人： Chusuke Munakata , Noriaki Honma
发明人： Chusuke Munakata , Noriaki Honma
IPC分类号： G01R31/265 , G01R31/26
CPC分类号： G01R31/2656
摘要： To nondestructively measure the carrier lifetime and cutoff frequency of a semiconductor wafer having a junction, the apparatus of this invention comprises means for radiating a pulsated photo beam whose frequency is changeable to the semiconductor wafer having a junction, means for taking out the resulting photovoltage by capacitance coupling and means for calculating the carrier lifetime and cutoff frequency from the chopping-frequency dependence characteristics of this photovoltage.
摘要翻译：为了非破坏性地测量具有结的半导体晶片的载流子寿命和截止频率，本发明的装置包括用于辐射频率可变化到具有结的半导体晶片的脉动光束的装置，用于通过以下方式取出所得光电压的装置：电容耦合以及用于根据该光电压的斩波 - 频率依赖特性计算载流子寿命和截止频率的装置。

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