会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Apparatus for measuring carrier lifetimes of a semiconductor wafer
    • 用于测量半导体晶片的载体寿命的装置
    • US4581578A
    • 1986-04-08
    • US575691
    • 1984-01-31
    • Noriaki HonmaChusuke Munakata
    • Noriaki HonmaChusuke Munakata
    • G01N21/00G01R31/28H01L21/66G01R31/26
    • H01L22/00G01R31/2831Y10S136/29
    • A carrier lifetime measuring apparatus according to the present invention has a construction wherein a first photon beam of a wavelength capable of rendering the optical absorption coefficient of a semiconductor sample very small when the semiconductor sample having a potential barrier in the vicinity of its surface is irradiated with the radiation, and a second photon beam of a wavelength capable of rendering the optical absorption coefficient very large are respectively chopped to alternately irradiate the identical place of the semiconductor sample with the chopped beams; first and second photovoltages which are generated in the semiconductor sample by these photon beams are detected by capacitance coupling; and the ratio between a first amplitude variation and a second amplitude variation is obtained from the amplitudes of the detected photovoltages; thereby to evaluate a minority carrier lifetime in the semiconductor sample.
    • 根据本发明的载体寿命测量装置具有这样的结构,其中当辐射在其表面附近具有势垒的半导体样品时,能够使半导体样品的光吸收系数变得非常小的波长的第一光子束 并且能够使光吸收系数非常大的波长的第二光子束分别切碎以交替地用切碎的光束照射半导体样品的相同位置; 通过这些光子束在半导体样品中产生的第一和第二光伏被电容耦合检测; 并且从检测到的光电压的振幅获得第一振幅变化和第二幅度变化之间的比率; 从而评估半导体样品中的少数载流子寿命。