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    • 5. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US07541285B2
    • 2009-06-02
    • US11464622
    • 2006-08-15
    • Yoshitaka AbikoToshio Hiroe
    • Yoshitaka AbikoToshio Hiroe
    • H01L21/302
    • H01L21/67028H01L21/67034H01L21/67057
    • A substrate processing apparatus performs a chemical solution process in a chemical solution process room that is partially formed within a chamber. During the chemical solution process, the substrate processing apparatus seals the chemical solution process room, and measures the pressure within the chemical solution process room, and controls the pressure within the chemical solution process room, based on a measured value. Irrespective of location environment of the substrate processing apparatus, the chemical solution process room can be controlled to a predetermined pressure. The substrate processing apparatus also permits efficient pressure control with respect to a minimum required amount of region.
    • 基板处理装置在室内部分地形成的化学溶液处理室中进行化学溶液处理。 在化学溶液处理过程中,基板处理装置密封化学溶液处理室,测量化学溶液处理室内的压力,并根据测量值控制化学溶液处理室内的压力。 不管衬底处理装置的位置环境如何,化学溶液处理室可以被控制到预定的压力。 基板处理装置还允许相对于最小所需的区域量进行有效的压力控制。
    • 6. 发明授权
    • Microelectromechanical system megasonic transducer
    • 微机电系统兆声传感器
    • US08957564B1
    • 2015-02-17
    • US13172514
    • 2011-06-29
    • Toshio HiroeZarem HaroldAlexander PayneJames Hunter
    • Toshio HiroeZarem HaroldAlexander PayneJames Hunter
    • H02N2/00B08B3/12
    • B08B3/12B06B1/0292
    • Megasonic cleaning systems and methods of fabricating and using the same are provided. In one embodiment, the system comprises a plurality of Micro-Electromechanical System (MEMS) transducers, each transducer including a movable membrane with a membrane electrode coupled to a first potential disposed above and spaced apart from an upper surface of a die including a cavity electrode coupled to a second potential, the membrane including multiple layers including a polysilicon layer between a top silicon nitride layer and a bottom silicon nitride layer, and the membrane electrode includes the polysilicon layer; a chuck on which a target workpiece is positioned; and a fluid to couple sonic energy from the plurality of MEMS transducers to the target workpiece. Other embodiments are also provided.
    • 提供了超声波清洗系统及其制造和使用方法。 在一个实施例中,系统包括多个微机电系统(MEMS)换能器,每个换能器包括具有耦合到第一电位的膜电极的可移动膜,所述膜电极设置在模具的上表面上方并与模具的上表面间隔开,所述模具的上表面包括腔电极 耦合到第二电位,所述膜包括多层,包括顶部氮化硅层和底部氮化硅层之间的多晶硅层,并且所述膜电极包括所述多晶硅层; 目标工件所在的卡盘; 以及将来自多个MEMS换能器的声能耦合到目标工件的流体。 还提供了其他实施例。
    • 7. 发明授权
    • Substrate treating apparatus
    • 底物处理装置
    • US07267128B2
    • 2007-09-11
    • US10681450
    • 2003-10-08
    • Toshio HiroeKoji HasegawaIchiro MitsuyoshiYoshihiro Nishina
    • Toshio HiroeKoji HasegawaIchiro MitsuyoshiYoshihiro Nishina
    • B08B3/00
    • H01L21/67265H01L21/67057
    • A substrate treating apparatus for treating substrates includes a treating tank for receiving and treating the substrates, a holding device movable, while holding the substrates in a cantilever mode, between a treating position in the treating tank and a transfer position above the treating tank, a transport device for supporting the substrates and transferring the substrates to and from the holding device in the transfer position, a detecting device for detecting a posture variation of the holding device, and a correcting device for correcting a position of the holding device or the transport device. The correcting device performs a correction according to the posture variation of the holding device detected by the detecting device in time of transfer of the substrates between the holding device and the transport device.
    • 用于处理基板的基板处理装置包括:用于接收和处理基板的处理槽;保持装置,可以在处理槽中的处理位置和处理槽上方的转移位置之间以悬臂模式保持基板; 传送装置,用于支撑基板并在保持装置的传送位置上传送基板;检测装置,用于检测保持装置的姿势变化;以及校正装置,用于校正保持装置或输送装置的位置 。 校正装置根据在保持装置和输送装置之间的基板的传送时由检测装置检测到的保持装置的姿势变化进行校正。
    • 9. 发明申请
    • WAFER THINNING APPARATUS AND WAFER TREATING SYSTEM
    • 吹风装置和水处理系统
    • US20070277861A1
    • 2007-12-06
    • US11750620
    • 2007-05-18
    • Toshio HiroeKenichiro Arai
    • Toshio HiroeKenichiro Arai
    • B08B3/00C23F1/00
    • H01L21/67086H01L21/67253H01L21/67276
    • A wafer thinning apparatus for treating wafers each having at least a circuit-forming surface thereof protected, by immersing the wafers in a treating solution. The apparatus includes a support table for receiving, as placed thereon, containers each containing a plurality of wafers in one of groups into which the wafers are sorted according to predetermined ranges of thickness, a treating tank for storing the treating solution and receiving the containers, a transport mechanism for transporting the containers between the support table and the treating tank, and a control unit for controlling the transport mechanism to transport the containers successively to the treating tank, and for changing an immersion time of the containers in the treating tank for each group.
    • 一种用于处理通过将晶片浸入处理溶液中的至少具有电路形成表面的晶片的晶片减薄装置被保护。 该装置包括一个支撑台,用于接收放置在其上的容器,每个容器包含根据预定厚度范围分选晶片的组中的一组中的多个晶片,用于存储处理溶液并接收容器的处理槽, 用于在支撑台和处理槽之间运送容器的运送机构,以及控制单元,用于控制运输机构将容器依次运送到处理槽,并且用于改变每个处理槽中的容器的浸渍时间 组。