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1. 发明授权

US5838056A Semiconductor device applied to composite insulative film and manufacturing method thereof 失效
标题翻译：具有氮化物膜的半导体器件
公开(公告)号：US5838056A
公开(公告)日：1998-11-17
申请号：US777100
申请日：1996-12-30
申请人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
发明人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
IPC分类号： H01L27/04 , H01L21/28 , H01L21/318 , H01L21/334 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L23/58
CPC分类号： H01L29/66181 , H01L21/28167 , H01L21/3185
摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH.sub.3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800.degree. C. to 1200.degree. C. and the partial pressures of H.sub.2 O and O.sub.2 are set at 1.times.10.sup.-4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.
摘要翻译：清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。接着，在CVD氮化膜上形成氧化硅膜。结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。然后，在沟槽中形成用于复合绝缘膜的电极。

2. 发明授权

US06171977B2 Semiconductor device applied to composite insulative film manufacturing method thereof 失效
标题翻译：半导体装置应用于复合绝缘膜的制造方法
公开(公告)号：US06171977B2
公开(公告)日：2001-01-09
申请号：US08777098
申请日：1996-12-30
申请人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
发明人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
IPC分类号： H01L2131
CPC分类号： H01L29/66181 , H01L21/28167 , H01L21/3185
摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800° C. to 1200° C. and the partial pressures of H2O and O2 are set at 1×10−4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.
摘要翻译：清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。接着，在CVD氮化膜上形成氧化硅膜。结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。然后，在沟槽中形成用于复合绝缘膜的电极。

3. 发明授权

US06772045B2 System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device 失效
标题翻译：用于确定干洗时间的系统，确定干洗时间的方法，干洗方法和制造半导体装置的方法
公开(公告)号：US06772045B2
公开(公告)日：2004-08-03
申请号：US10231019
申请日：2002-08-30
申请人： Shuji Katsui , Masayuki Tanaka , Masaki Kamimura , Hiroshi Akahori , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Shigehiko Saida , Yoshitaka Tsunashima , Yuuichi Mikata
发明人： Shuji Katsui , Masayuki Tanaka , Masaki Kamimura , Hiroshi Akahori , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Shigehiko Saida , Yoshitaka Tsunashima , Yuuichi Mikata
IPC分类号： G06F1900
CPC分类号： H04L12/66 , Y10S438/905
摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.
摘要翻译：一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

4. 发明授权

US5714406A Method for forming film on semiconductor substrate by thermal CVD method 失效
标题翻译：通过热CVD法在半导体衬底上形成膜的方法
公开(公告)号：US5714406A
公开(公告)日：1998-02-03
申请号：US640257
申请日：1996-04-30
申请人： Takashi Suzuki , Akihito Yamamoto , Hiroshi Ogino , Yoshio Kasai
发明人： Takashi Suzuki , Akihito Yamamoto , Hiroshi Ogino , Yoshio Kasai
IPC分类号： C23C16/44 , C23C16/46 , H01L21/205 , H01L21/302
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A semiconductor substrate is supported on a lower electrode provided within a chamber. The semiconductor substrate is heated up to about 600.degree. to 700.degree. by radiation heat from a halogen lamp. While the pressure within the chamber is reduced to about 0.1 to 1 Torr, the lower electrode is used as a positive electrode, and an upper electrode is used as a negative electrode. In this state, a DC voltage of 20 V is applied from a DC power supply. Then, a material gas is introduced into the chamber via an introducing hole, and a polysilicon film is grown on an oxide film on the semiconductor substrate. Electricity in the oxide film increases an initial growth rate of the polysilicon film and prevents formation of pinholes in the polysilicon film.
摘要翻译：半导体基板被支撑在设置在室内的下电极上。通过来自卤素灯的辐射热将半导体衬底加热至约600℃至700℃。虽然室内的压力降低到约0.1至1乇，但是下电极用作正电极，并且上电极用作负电极。在该状态下，从直流电源施加20V的直流电压。然后，通过导入孔将原料气体引入室内，在半导体基板上的氧化膜上生长多晶硅膜。氧化膜中的电流增加了多晶硅膜的初始生长速率并且防止了在多晶硅膜中形成针孔。

5. 发明授权

US06989281B2 Cleaning method for a semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置制造装置的清洗方法
公开(公告)号：US06989281B2
公开(公告)日：2006-01-24
申请号：US10957609
申请日：2004-10-05
申请人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
发明人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
IPC分类号： H01L21/00
CPC分类号： H01L21/67253
摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.
摘要翻译：半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

6. 发明授权

US07145667B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, semiconductor device manufacturing system, and cleaning method for semiconductor device manufacturing apparatus 有权
公开(公告)号：US07145667B2
公开(公告)日：2006-12-05
申请号：US10230423
申请日：2002-08-29
申请人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
发明人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
IPC分类号： G01B11/28
CPC分类号： H01L21/67253
摘要： There is here disclosed a semiconductor device manufacturing method, comprising arranging at least one subject piece in a processing chamber, and starting a predetermined processing, applying a light having a predetermined wavelength to a monitoring section which is formed to enable transmission and reflection of the light and which is provided at a tip of a monitoring device to indirectly monitor a thickness of a film on the subject piece, and measuring a reflection light which is the application light is reflected near the monitoring section, while the light and the reflection light are isolated from an atmosphere and a substance in the chamber, measuring an amount of a substance on the monitoring section based on the reflection light, determining a thickness of a film on the subject piece based on the substance, and conducting the processing while controlling the processing based on the thickness of the film.

7. 发明申请

US20050059203A1 Cleaning method for a semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置制造装置的清洗方法
公开(公告)号：US20050059203A1
公开(公告)日：2005-03-17
申请号：US10957609
申请日：2004-10-05
申请人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
发明人： Akihito Yamamoto , Takashi Nakao , Yuuichi Mikata , Yoshitaka Tsunashima
IPC分类号： C23C16/52 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , G03B17/24
CPC分类号： H01L21/67253
摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.
摘要翻译：半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

8. 发明授权

US06992020B2 Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06992020B2
公开(公告)日：2006-01-31
申请号：US10902414
申请日：2004-07-30
申请人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
发明人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76224 , H01L21/823475
摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
摘要翻译：本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在环境中形成在氮化硅膜上的氧化硅膜含有TEOS和O 3 3的气氛。

9. 发明申请

US20050012171A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050012171A1
公开(公告)日：2005-01-20
申请号：US10902414
申请日：2004-07-30
申请人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
发明人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
IPC分类号： H01L21/76 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L23/522 , H01L29/78 , H01L21/336 , H01L29/00
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76224 , H01L21/823475
摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
摘要翻译：本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在含有TEOS和O 3的环境气氛中形成在氮化硅膜上的氧化硅膜。

10. 发明授权

US06841850B2 Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same 有权
标题翻译：具有氮化硅膜和氧化硅膜的半导体器件及其制造方法
公开(公告)号：US06841850B2
公开(公告)日：2005-01-11
申请号：US10235917
申请日：2002-09-06
申请人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
发明人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
IPC分类号： H01L21/76 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L23/522 , H01L29/78 , H01L23/58
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76224 , H01L21/823475
摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
摘要翻译：本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在含有TEOS和O 3的环境气氛中形成在氮化硅膜上的氧化硅膜。

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