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1. 发明申请

US20050012171A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050012171A1
公开(公告)日：2005-01-20
申请号：US10902414
申请日：2004-07-30
申请人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
发明人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
IPC分类号： H01L21/76 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L23/522 , H01L29/78 , H01L21/336 , H01L29/00
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76224 , H01L21/823475
摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
摘要翻译：本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在含有TEOS和O 3的环境气氛中形成在氮化硅膜上的氧化硅膜。

2. 发明授权

US06841850B2 Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same 有权
标题翻译：具有氮化硅膜和氧化硅膜的半导体器件及其制造方法
公开(公告)号：US06841850B2
公开(公告)日：2005-01-11
申请号：US10235917
申请日：2002-09-06
申请人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
发明人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
IPC分类号： H01L21/76 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L23/522 , H01L29/78 , H01L23/58
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76224 , H01L21/823475
摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
摘要翻译：本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在含有TEOS和O 3的环境气氛中形成在氮化硅膜上的氧化硅膜。

3. 发明授权

US06992020B2 Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06992020B2
公开(公告)日：2006-01-31
申请号：US10902414
申请日：2004-07-30
申请人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
发明人： Susumu Hiyama , Akihito Yamamoto , Hiroshi Akahori , Shigehiko Saida
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76224 , H01L21/823475
摘要： A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
摘要翻译：本发明的半导体器件包括在半导体衬底上形成的密度为2.2g / cm 3以下的氮化硅膜和在环境中形成在氮化硅膜上的氧化硅膜含有TEOS和O 3 3的气氛。

4. 发明授权

US09000493B2 Solid-state imaging device, method for producing same, and camera 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US09000493B2
公开(公告)日：2015-04-07
申请号：US13402298
申请日：2012-02-22
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0224
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译：固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 第二表面和光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。

5. 发明授权

US08492804B2 Solid-state imaging device, method for producing same, and camera 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US08492804B2
公开(公告)日：2013-07-23
申请号：US12945217
申请日：2010-11-12
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译：固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

6. 发明授权

US08183603B2 Solid-state imaging device for inhibiting dark current 有权
标题翻译：用于抑制暗电流的固态成像装置
公开(公告)号：US08183603B2
公开(公告)日：2012-05-22
申请号：US11677645
申请日：2007-02-22
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译：固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

7. 发明申请

US20100060758A1 SOLID-STATE IMAGING DEVICE AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置和制造固态成像装置的方法
公开(公告)号：US20100060758A1
公开(公告)日：2010-03-11
申请号：US12544914
申请日：2009-08-20
申请人： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
发明人： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14683 , H01L27/1463
摘要： A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.
摘要翻译：固态成像装置包括：传感器，包括设置在半导体衬底的表面层中的杂质扩散层; 和含有碳的氧化物绝缘膜，所述氧化物绝缘膜设置在所述传感器上。

8. 发明申请

US20090189235A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20090189235A1
公开(公告)日：2009-07-30
申请号：US12339941
申请日：2008-12-19
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L31/10 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

9. 发明授权

US08293563B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08293563B2
公开(公告)日：2012-10-23
申请号：US12775037
申请日：2010-05-06
申请人： Susumu Hiyama
发明人： Susumu Hiyama
IPC分类号： H01L31/042
CPC分类号： H01L27/14685 , H01L27/14623
摘要： Disclosed herein is a method for making a semiconductor device including the steps of: forming a light-receiving portion for carrying out photoelectric conversion in a semiconductor substrate; forming an insulating film to cover a light-receiving side of the semiconductor substrate; forming a metallic light-shielding film to partly cover the insulating film in correspondence to the light-receiving portion; and heating the metallic light-shielding film by irradiation of the metallic light-shielding film with a microwave to permit selective annealing of a laminated portion with the metallic light-shielding film in the insulating film.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括以下步骤：在半导体衬底中形成用于进行光电转换的光接收部分; 形成绝缘膜以覆盖半导体衬底的光接收侧; 形成与所述受光部对应地部分覆盖所述绝缘膜的金属遮光膜; 以及通过用微波照射金属遮光膜来加热金属遮光膜，以允许绝缘膜中的金属遮光膜对层压部分进行选择性退火。

10. 发明授权

US08217479B2 Solid-state image pickup element, method of manufacturing the same, and image pickup apparatus including the same 有权
标题翻译：固体摄像元件及其制造方法以及包括该固体摄像元件的摄像装置
公开(公告)号：US08217479B2
公开(公告)日：2012-07-10
申请号：US12691560
申请日：2010-01-21
申请人： Itaru Oshiyama , Susumu Hiyama
发明人： Itaru Oshiyama , Susumu Hiyama
IPC分类号： H01L31/0232 , H01L21/30
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.
摘要翻译：本发明的实施例提供了一种固态摄像元件，包括：具有光电二极管的半导体层，在光电二极管中进行光电转换; 在通过使用等离子体的至少具有光电二极管的区域中的半导体层上形成的氧化硅膜; 以及形成在氧化硅膜上并具有负固定电荷的膜。

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