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    • 1. 发明授权
    • Electron beam pattern line width measurement system
    • 电子束图案线宽测量系统
    • US4740693A
    • 1988-04-26
    • US807681
    • 1985-12-11
    • Yoshinori NakayamaShinji OkazakiHidehito ObayashiMikio Ichihashi
    • Yoshinori NakayamaShinji OkazakiHidehito ObayashiMikio Ichihashi
    • G01S13/74G01B7/02G01B15/00H01J37/28G01B7/14
    • H01J37/28G01B15/00G01B7/02
    • Disclosed is an electron beam pattern line width measurement system wherein an electron beam is converged to a fine spot, the electron beam is scanned on a sample formed with a pattern to-be-measured, secondary electrons generated from a surface of the sample by the projection of the electron beam are detected, and the detected signal is processed to determine a line width of the pattern to-be-measured, comprising a secondary electron detector which detects a signal corresponding to an amount of all secondary electrons generated by the scanning, and a secondary electron energy analyzer which selectively detects a signal corresponding to an amount of secondary electrons of specified energy. With the electron beam pattern line width measurement system, it becomes possible to precisely detect a pattern boundary region defined by different sorts of materials in a stepped structure of a small level difference not having been measurable with a prior-art electron beam pattern line width measurement system.
    • 公开了一种电子束图案线宽度测量系统,其中电子束会聚到细微点,电子束在形成有要测量图案的样品上扫描,从样品表面产生的二次电子被 检测电子束的投影,并且处理检测信号以确定要测量的图案的线宽,包括二次电子检测器,其检测对应于由扫描产生的所有二次电子的量的信号, 以及二次电子能量分析器,其选择性地检测与特定能量的二次电子量对应的信号。 利用电子束图案线宽度测量系统,可以精确地检测由现有技术的电子束图案线宽度测量不能测量的小电平差的阶梯式结构中由不同种类的材料限定的图案边界区域 系统。