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    • 4. 发明申请
    • ACTIVE-ENERGY-RAY-CURABLE HOT-MELT URETHANE RESIN COMPOSITION, MEMBER FOR ELECTRONIC DEVICE, THE MEMBER INCLUDING THE RESIN COMPOSITION, AND PACKING
    • 活性能量可固化的热熔凝胶组合物,电子器件的成员,包括树脂组合物的成员和包装
    • US20130158149A1
    • 2013-06-20
    • US13704450
    • 2011-08-03
    • Yoshinori KanagawaDaichi HiguchiTamotsu Sakamoto
    • Yoshinori KanagawaDaichi HiguchiTamotsu Sakamoto
    • C09D175/04
    • C09D175/04C08F299/06C08G18/4018C08G18/4211C08G18/4854C08G18/672C08G18/7642C08G2170/20C09J175/16F16J15/14C08G18/40
    • An active-energy-ray-curable hot-melt urethane resin composition contains a hot-melt urethane and an active energy ray polymerization initiator, the hot-melt urethane being obtained by converting more than 50% and 100% or less of the total number of isocyanate groups in an isocyanate group-terminated urethane prepolymer into terminal (meth)acryloyl groups by a reaction with hydroxyl groups in a reactive functional group-containing (meth)acrylic compound, the isocyanate group-terminated urethane prepolymer being obtained by reacting a polyisocyanate component with a polyol component that contains an aromatic polyester polyol containing a 2,2-dimethyl-1,3-propylene structure in its molecule in an amount of 90% by mole or more of a glycol component and a polyol other than the aromatic polyester polyol. The hot-melt urethane resin composition has excellent properties such as hot melting, rapid curability, a shape-retaining property after being applied, flexibility, durability, a property of adhering to a base, a low outgas property, mechanical strength, and flame retardancy.
    • 活性能量射线固化热熔聚氨酯树脂组合物含有热熔聚氨酯和活性能量射线聚合引发剂,该热熔聚氨酯通过将总数转换为50%以上100%以下 异氰酸酯基封端的氨基甲酸酯预聚物通过与含反应性官能团的(甲基)丙烯酸化合物中的羟基反应而与异氰酸酯基封端的氨基甲酸酯预聚物中的异氰酸酯基封端的氨基甲酸酯预聚物反应成末端(甲基)丙烯酰基, 组分与含有分子中含有2,2-二甲基-1,3-亚丙基结构的芳族聚酯多元醇的多元醇组分的量为90摩尔%以上的二醇组分和芳族聚酯以外的多元醇 多元醇。 热熔性聚氨酯树脂组合物具有热熔融,快速固化性,施加后的形状保持性,柔软性,耐久性,粘附于基体的特性,低排气性,机械强度和阻燃性等优异的性能 。
    • 5. 发明授权
    • Wafer polishing method and apparatus
    • 晶圆抛光方法及装置
    • US08066550B2
    • 2011-11-29
    • US12337145
    • 2008-12-17
    • Daichi HiguchiKazuma Tanaka
    • Daichi HiguchiKazuma Tanaka
    • B24B1/00
    • B24B9/065
    • A wafer polishing method, in which the outer circumferential edge of a polishing member is first cut by a cutting tool fixed to a table base, thereby forming the polishing member into a completely round shape and also positioning the polishing member in a Y direction at a Y-directional reference position of the table base. Thereafter, a polishing unit is once lifted in the condition where the table base remains still at the reference position. Thereafter, the table base is horizontally moved toward a column in the Y direction to thereby position the polishing member in the Y direction so that only a peripheral portion of the wafer is polished by the polishing member. At this time, the horizontal travel of the table base is preliminarily obtained from the Y-directional positional relation between the cutting tool and the wafer held on a chuck table and from the width of the peripheral portion to be polished. Finally, the polishing unit is lowered to make the lower surface of the polishing member into pressure contact with the peripheral portion of the wafer, thus polishing only the peripheral portion.
    • 一种晶片抛光方法,其中抛光构件的外周边缘首先被固定到台座上的切割工具切割,从而将抛光构件形成为完全圆形,并且将抛光构件沿Y方向定位在 表格的Y方向参考位置。 此后,抛光单元在桌面保持静止在基准位置的状态下一次抬起。 此后,台架沿着Y方向水平移动,从而将抛光部件定位在Y方向上,使得只有晶片的周边部分被抛光部件抛光。 此时,预先从切削工具与夹持台上的晶片之间的Y方向的位置关系和待抛光的周边部的宽度获得台座的水平行程。 最后,抛光单元被降低以使抛光构件的下表面与晶片的周边部分压力接触,从而只抛光周边部分。
    • 6. 发明申请
    • WAFER POLISHING METHOD AND APPARATUS
    • 波浪抛光方法和装置
    • US20090176444A1
    • 2009-07-09
    • US12337145
    • 2008-12-17
    • Daichi HiguchiKazuma Tanaka
    • Daichi HiguchiKazuma Tanaka
    • B24B9/06B24B53/00
    • B24B9/065
    • A wafer polishing method, in which the outer circumferential edge of a polishing member is first cut by a cutting tool fixed to a table base, thereby forming the polishing member into a completely round shape and also positioning the polishing member in a Y direction at a Y-directional reference position of the table base. Thereafter, a polishing unit is once lifted in the condition where the table base remains still at the reference position. Thereafter, the table base is horizontally moved toward a column in the Y direction to thereby position the polishing member in the Y direction so that only a peripheral portion of the wafer is polished by the polishing member. At this time, the horizontal travel of the table base is preliminarily obtained from the Y-directional positional relation between the cutting tool and the wafer held on a chuck table and from the width of the peripheral portion to be polished. Finally, the polishing unit is lowered to make the lower surface of the polishing member into pressure contact with the peripheral portion of the wafer, thus polishing only the peripheral portion.
    • 一种晶片抛光方法,其中抛光构件的外周边缘首先被固定到台座上的切割工具切割,从而将抛光构件形成为完全圆形,并且将抛光构件沿Y方向定位在 表格的Y方向参考位置。 此后,抛光单元在桌面保持静止在基准位置的状态下一次抬起。 此后,台架沿着Y方向水平移动,从而将抛光部件定位在Y方向上,使得只有晶片的周边部分被抛光部件抛光。 此时,预先从切削工具与夹持台上的晶片之间的Y方向的位置关系和待抛光的周边部的宽度获得台座的水平行程。 最后,抛光单元被降低以使抛光构件的下表面与晶片的周边部分压力接触,从而只抛光周边部分。