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    • 3. 发明申请
    • Driving method of nonvolatile memory and nonvolatile memory used in the same method
    • 以相同的方法使用非易失性存储器和非易失性存储器的驱动方法
    • US20060203560A1
    • 2006-09-14
    • US11371908
    • 2006-03-10
    • Yasuhiro Tomita
    • Yasuhiro Tomita
    • G11C16/04
    • H01L21/28282G11C16/0475G11C16/28H01L27/115
    • To increase a cell current ratio of a program state to an erase state of two bit storage nonvolatile memory cells and reduce power consumption, a program state of MONOS-typed memory cells is a state where electrons are injected into two local regions near drain and source junction edges, an erase state is a state where the electrons injected into the two local regions are neutralized or holes are injected, and a read bias is a linear region. A cell current in the program state can be suppressed since charges injected into the source side suppress introduction of electron carriers required for formation of a conductive channel and charges injected into the drain side limit the formation of the conductive channel near the drain side. Accordingly, a read current can be reduced, a cell current ratio can be enhanced, and moreover, a margin of a reading operation can be increased.
    • 为了将编程状态的单元电流比率增加到两位存储非易失性存储单元的擦除状态并降低功耗,MONOS型存储单元的编程状态是将电子注入漏极和源极附近的两个局部区域的状态 结合边缘,擦除状态是注入到两个局部区域中的电子被中和或注入空穴并且读取偏压是线性区域的状态。 可以抑制编程状态下的电池电流,因为注入到源极侧的电荷抑制形成导电沟道所需的电子载流子的引入和注入到漏极侧的电荷限制了靠近漏极侧的导电通道的形成。 因此,可以减小读取电流,可以提高电池电流比,而且可以提高读取操作的余量。
    • 4. 发明申请
    • Non-volatile semiconductor storage device
    • 非易失性半导体存储装置
    • US20050243616A1
    • 2005-11-03
    • US11113046
    • 2005-04-25
    • Manabu KomiyaYasuhiro TomitaHitoshi Suwa
    • Manabu KomiyaYasuhiro TomitaHitoshi Suwa
    • G11C16/02G11C11/34G11C16/22
    • G11C16/22
    • The non-volatile semiconductor storage device 101 includes the specific command Enable/Disable signal lines 120 connected to the command decoder 108. The specific command Enable/Disable signals are externally inputted to the command decoder 108 through the signal lines 120. Thereby, when the device 101 is initialized, the command decoder 108 enables the specific command and the device 101 can shift to a mode corresponding to the specific command. On the other hand, the command decoder 108 can disable the specific command, for example, when a user uses the device 101, thereby preventing the specific command from being executed even when the specific command is erroneously issued.
    • 非易失性半导体存储装置101包括连接到命令解码器108的特定命令启用/禁止信号线120。 特定命令使能/禁止信号通过信号线120被外部输入到命令解码器108。 因此,当初始化设备101时,命令解码器108启用特定命令,并且设备101可以转换到与特定命令相对应的模式。 另一方面,命令解码器108可以例如当用户使用设备101时禁止特定命令,从而即使在特定命令被错误地发出时也防止特定命令被执行。
    • 5. 发明授权
    • Radiation detector
    • 辐射检测器
    • US07847261B2
    • 2010-12-07
    • US11993391
    • 2005-06-30
    • Yasuhiro TomitaYuji ShirayanagiShinjiro Matsui
    • Yasuhiro TomitaYuji ShirayanagiShinjiro Matsui
    • G01T1/161
    • G01T1/169G01T1/161
    • A detecting unit (2) detects radiation. A data acquiring block (34) creates basic data equivalent to the count per unit time of the detected radiation. A data processing block (40) compares the basic data with a threshold and generates a annunciation control signal when the basic data is above the threshold. An annunciation block (42) generates a detection sound in response to the annunciation control signal. A computing block (38) computes the threshold by using a coefficient specified by means of an input device (18) and the maximum value of the basic data stored in a storage block (36). When the user repetitively examines a region (50) to be measured while gradually increasing the threshold, the region where the detection sound is generated is gradually narrowed. With this, a portion (53) where radiation is concentrated in the region (50) can be found out.
    • 检测单元(2)检测辐射。 数据获取块(34)产生与检测到的辐射的每单位时间的计数等价的基本数据。 数据处理块(40)将基本数据与阈值进行比较,当基本数据高于阈值时,生成通知控制信号。 通知块(42)响应于通知控制信号产生检测声音。 计算块(38)通过使用通过输入装置(18)指定的系数和存储在存储块(36)中的基本数据的最大值来计算阈值。 当用户在逐渐增加阈值的同时重复地检查要测量的区域(50)时,产生检测声音的区域逐渐变窄。 由此,可以发现辐射集中在区域(50)中的部分(53)。
    • 6. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20100156644A1
    • 2010-06-24
    • US11993391
    • 2005-06-30
    • Yasuhiro TomitaYuji ShirayanagiShinjiro Matsui
    • Yasuhiro TomitaYuji ShirayanagiShinjiro Matsui
    • G08B17/12
    • G01T1/169G01T1/161
    • A detecting unit (2) detects radiation. A data acquiring block (34) creates basic data equivalent to the count per unit time of the detected radiation. A data processing block (40) compares the basic data with a threshold and generates a annunciation control signal when the basic data is above the threshold. An annunciation block (42) generates a detection sound in response to the annunciation control signal. A computing block (38) computes the threshold by using a coefficient specified by means of an input device (18) and the maximum value of the basic data stored in a storage block (36). When the user repetitively examines a region (50) to be measured while gradually increasing the threshold, the region where the detection sound is generated is gradually narrowed. With this, a portion (53) where radiation is concentrated in the region (50) can be found out.
    • 检测单元(2)检测辐射。 数据获取块(34)产生与检测到的辐射的每单位时间的计数等价的基本数据。 数据处理块(40)将基本数据与阈值进行比较,当基本数据高于阈值时,生成通知控制信号。 通知块(42)响应于通知控制信号产生检测声音。 计算块(38)通过使用通过输入装置(18)指定的系数和存储在存储块(36)中的基本数据的最大值来计算阈值。 当用户在逐渐增加阈值的同时重复地检查要测量的区域(50)时,产生检测声音的区域逐渐变窄。 由此,可以发现辐射集中在区域(50)中的部分(53)。
    • 7. 发明授权
    • Radiation detector and radiation detecting method
    • 辐射检测器和放射线检测方法
    • US07663120B2
    • 2010-02-16
    • US12293849
    • 2007-02-26
    • Yasuhiro TomitaYuji ShirayanagiShinjiro Matsui
    • Yasuhiro TomitaYuji ShirayanagiShinjiro Matsui
    • G01T1/00
    • G01T1/17G01T1/247
    • A radiation detector 6 detects radiation that passed through a specimen 2 by discriminating it by a plurality of energy regions. The radiation detector 6 includes a radiation detecting section 10 which generates output signals corresponding to energy of the incident radiation, and a signal processing section 20 which discriminates output signals by first through N-th signal discrimination thresholds T1 through TN and acquires regional counts A1 through AN as radiation counts in the plurality of energy regions W1 through WN by counting the discriminated output signals. The first through N-th signal discrimination thresholds T1 through TN are set so that reference regional counts A1(B) through AN(B) as regional counts in the plurality of energy regions W1 through WN when the radiation detecting section 10 detects radiation (reference radiation) before passing through the specimen 2 become substantially equal.
    • 辐射检测器6通过多个能量区域区分它来检测穿过样本2的辐射。 辐射检测器6包括产生与入射辐射能量对应的输出信号的放射线检测部分10以及通过第一至第N信号鉴别阈值T1至TN鉴别输出信号的信号处理部分20,并通过 AN通过对识别出的输出信号进行计数来计算多个能量区域W1至WN中的辐射计数。 设定第1至第N信号鉴别阈值T1至TN,使得当辐射检测部分10检测到辐射时,参考区域计数A1(B)至AN(B)作为多个能量区域W1至WN中的区域计数 辐射)在通过样本2之前变得基本相等。
    • 10. 发明授权
    • Driving method of nonvolatile memory and nonvolatile memory used in the same method
    • 以相同的方法使用非易失性存储器和非易失性存储器的驱动方法
    • US07277324B2
    • 2007-10-02
    • US11371908
    • 2006-03-10
    • Yasuhiro Tomita
    • Yasuhiro Tomita
    • G11C16/00
    • H01L21/28282G11C16/0475G11C16/28H01L27/115
    • To increase a cell current ratio of a program state to an erase state of two bit storage nonvolatile memory cells and reduce power consumption, a program state of MONOS-typed memory cells is a state where electrons are injected into two local regions near drain and source junction edges, an erase state is a state where the electrons injected into the two local regions are neutralized or holes are injected, and a read bias is a linear region. A cell current in the program state can be suppressed since charges injected into the source side suppress introduction of electron carriers required for formation of a conductive channel and charges injected into the drain side limit the formation of the conductive channel near the drain side. Accordingly, a read current can be reduced, a cell current ratio can be enhanced, and moreover, a margin of a reading operation can be increased.
    • 为了将编程状态的单元电流比率增加到两位存储非易失性存储单元的擦除状态并降低功耗,MONOS型存储单元的编程状态是将电子注入漏极和源极附近的两个局部区域的状态 结合边缘,擦除状态是注入到两个局部区域中的电子被中和或注入空穴并且读取偏压是线性区域的状态。 可以抑制编程状态下的电池电流,因为注入到源极侧的电荷抑制形成导电沟道所需的电子载流子的引入和注入到漏极侧的电荷限制了靠近漏极侧的导电通道的形成。 因此,可以减小读取电流,可以提高电池电流比,而且可以提高读取操作的余量。