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    • 6. 发明授权
    • Magnetic random access memory and method of manufacturing the same
    • 磁性随机存取存储器及其制造方法
    • US08592928B2
    • 2013-11-26
    • US13237586
    • 2011-09-20
    • Keiji HosotaniHiroyuki KanayaTakeshi Kajiyama
    • Keiji HosotaniHiroyuki KanayaTakeshi Kajiyama
    • H01L29/82
    • H01L27/228H01L43/08H01L43/12
    • According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
    • 根据一个实施例,磁性随机存取存储器包括形成在半导体衬底上的选择元件,形成在选择元件上方的层间电介质膜,形成于层间电介质膜中的电连接到选择元件的接触层, 电极层,与金属材料电连接,由金属材料的氧化物构成的金属氧化物绝缘膜,围绕下部电极层的侧面,形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层,形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面,以及与上电极层电连接的位线。
    • 7. 发明申请
    • MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
    • 磁性随机存取存储器及其制造方法
    • US20120068286A1
    • 2012-03-22
    • US13237586
    • 2011-09-20
    • Keiji HosotaniHiroyuki KanayaTakeshi Kajiyama
    • Keiji HosotaniHiroyuki KanayaTakeshi Kajiyama
    • H01L29/82H01L21/20
    • H01L27/228H01L43/08H01L43/12
    • According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
    • 根据一个实施例,磁性随机存取存储器包括形成在半导体衬底上的选择元件,形成在选择元件上方的层间电介质膜,形成于层间电介质膜中的电连接到选择元件的接触层, 电极层,与金属材料电连接,由金属材料的氧化物构成的金属氧化物绝缘膜,围绕下部电极层的侧面,形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层,形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面,以及与上电极层电连接的位线。