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1. 发明授权

US08592928B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US08592928B2
公开(公告)日：2013-11-26
申请号：US13237586
申请日：2011-09-20
申请人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
发明人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
摘要翻译：根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层，电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

2. 发明申请

US20120068286A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20120068286A1
公开(公告)日：2012-03-22
申请号：US13237586
申请日：2011-09-20
申请人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
发明人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
IPC分类号： H01L29/82 , H01L21/20
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
摘要翻译：根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层，电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

3. 发明授权

US07919826B2 Magnetoresistive element and manufacturing method thereof 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US07919826B2
公开(公告)日：2011-04-05
申请号：US12108093
申请日：2008-04-23
申请人： Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama , Keiji Hosotani
发明人： Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama , Keiji Hosotani
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译：磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。第一堆叠结构的圆周表面基本垂直。第二堆叠结构具有向上变窄的锥形形状。

4. 发明申请

US20080265347A1 MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20080265347A1
公开(公告)日：2008-10-30
申请号：US12108093
申请日：2008-04-23
申请人： Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama , Keiji Hosotani
发明人： Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama , Keiji Hosotani
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译：磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。第一堆叠结构的圆周表面基本垂直。第二堆叠结构具有向上变窄的锥形形状。

5. 发明授权

US07727778B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US07727778B2
公开(公告)日：2010-06-01
申请号：US12200181
申请日：2008-08-28
申请人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
发明人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： H01L21/00
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
摘要翻译：磁阻元件包括通过顺序层叠其中固定有磁化方向的第一固定层，第一非磁性层，磁化方向可变的自由层，第二非磁性层和第二固定层而形成的叠层，其中磁化方向是固定的，设置在第二非磁性层上的与第二固定层的圆周表面接触以围绕第二固定层并由绝缘体制成的第一周向壁和设置在第一非磁性层上的第二周向壁层与自由层的周向表面接触以包围自由层，并由绝缘体制成。

6. 发明申请

US20100053823A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20100053823A1
公开(公告)日：2010-03-04
申请号：US12200181
申请日：2008-08-28
申请人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
发明人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： G11B5/33
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
摘要翻译：磁阻元件包括通过顺序层叠其中固定有磁化方向的第一固定层，第一非磁性层，磁化方向可变的自由层，第二非磁性层和第二固定层而形成的叠层，其中磁化方向是固定的，设置在第二非磁性层上的与第二固定层的圆周表面接触以围绕第二固定层并由绝缘体制成的第一周向壁和设置在第一非磁性层上的第二周向壁层与自由层的周向表面接触以包围自由层，并由绝缘体制成。

7. 发明授权

US08786038B2 Semiconductor storage device and method of manufacturing the same 有权
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US08786038B2
公开(公告)日：2014-07-22
申请号：US13230746
申请日：2011-09-12
申请人： Keiji Hosotani , Hiroyuki Kanaya
发明人： Keiji Hosotani , Hiroyuki Kanaya
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel junction element. A growth layer is provided on the upper electrode and is composed of a conductive material and has a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate. A wiring line is provided on the growth layer.
摘要翻译：根据本实施例的半导体存储装置包括形成在半导体衬底的表面上的选择元件。下电极连接到选择元件。在下电极上设置磁性隧道结元件。上部电极设置在磁性隧道结元件上。生长层设置在上电极上并由导电材料构成，并且当从半导体衬底的表面上方观察时具有比上电极大的面积。在生长层上设置布线。

8. 发明授权

US08111538B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08111538B2
公开(公告)日：2012-02-07
申请号：US12273874
申请日：2008-11-19
申请人： Keiji Hosotani , Yoshiaki Asao , Yoshihisa Iwata
发明人： Keiji Hosotani , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C7/20 , G11C11/16 , G11C13/0004 , G11C13/0007 , G11C29/028 , G11C29/50 , G11C2013/0083 , G11C2029/1206 , G11C2029/5002 , G11C2213/31 , G11C2213/32 , G11C2213/79
摘要： A semiconductor memory device includes a memory cell array having a plurality of memory cells which are set into low-resistance states/high-resistance states according to “0” data/“1” data. An allocation of the “0” data/“1” data and the low-resistance state/high-resistance state is switched when a power source is turned on.
摘要翻译：半导体存储器件包括具有根据“0”数据/“1”数据被设置成低电阻状态/高电阻状态的多个存储器单元的存储单元阵列。当电源接通时，切换“0”数据/“1”数据和低电阻状态/高电阻状态的分配。

9. 发明授权

US07932513B2 Magnetic random access memory, and write method and manufacturing method of the same 有权
标题翻译：磁性随机存取存储器及其写入方法和制造方法相同
公开(公告)号：US07932513B2
公开(公告)日：2011-04-26
申请号：US12043617
申请日：2008-03-06
申请人： Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
发明人： Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
IPC分类号： H01L29/06 , H01L29/08 , H01L39/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/22 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.
摘要翻译：磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件，具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

10. 发明授权

US07706175B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US07706175B2
公开(公告)日：2010-04-27
申请号：US11839265
申请日：2007-08-15
申请人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

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