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1. 发明申请

US20110304029A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, WIRING BOARD AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR PACKAGE, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：半导体器件及其制造方法，接线板及其制造方法，半导体封装和电子设备
公开(公告)号：US20110304029A1
公开(公告)日：2011-12-15
申请号：US13216118
申请日：2011-08-23
申请人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
IPC分类号： H01L23/58
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1319 , H01L2224/132 , H01L2224/133 , H01L2224/1358 , H01L2224/136 , H01L2224/16 , H01L2224/83102 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H05K1/0271 , H05K3/244 , H05K3/3436 , H05K2201/0212 , Y02P70/613 , H01L2924/01015 , H01L2924/00 , H01L2224/11
摘要： A terminal pad is formed on an active surface of an LSI chip, and a composite barrier metal layer is provided over this terminal pad. In the composite barrier metal layer, a plurality of low-elasticity particles composed of a silicone resin is dispersed throughout a metal base phase composed of NiP. The composite barrier metal layer has a thickness of, e.g., 3 μm, and the low-elasticity particles have a diameter of, e.g., 1 μm. A semiconductor device is mounted on a wiring board by bonding a solder bump to the composite barrier metal layer. The low-elasticity particles are thereby allowed to deform according to the applied stress when the semiconductor device is bonded to the wiring board via the solder bump, whereby the stress can be absorbed.
摘要翻译：在LSI芯片的有源面上形成端子焊盘，在该端子焊盘上设置复合阻挡金属层。在复合阻挡金属层中，将由硅树脂构成的多个低弹性粒子分散在由NiP构成的金属基体相中。复合阻挡金属层的厚度例如为3μm，低弹性颗粒的直径例如为1μm。通过将焊料凸块粘合到复合阻挡金属层上，将半导体器件安装在布线板上。因此，当半导体器件通过焊料凸块接合到布线板时，低弹性粒子根据施加的应力而变形，从而能够吸收应力。

2. 发明申请

US20090174052A1 ELECTRONIC COMPONENT, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：电子元件，半导体封装和电子器件
公开(公告)号：US20090174052A1
公开(公告)日：2009-07-09
申请号：US12298285
申请日：2007-05-22
申请人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
IPC分类号： H01L23/52
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. An electronic component comprises the electronic component includes an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni.
摘要翻译：在由例如Cu，Ni或NiP制成的常规UBM中，存在如下问题：当电子部件长时间保持在高温条件下时，UBM的阻挡特性丧失，由于在接合界面处形成脆性合金层，强度降低。本发明改善了在高温下储存之后焊料连接部分的长期连接可靠性降低的问题。电子部件包括电子部件，其包括形成在基板或半导体元件上的电极焊盘和形成为覆盖电极焊盘的阻挡金属层，并且阻挡金属层在与所述电极焊盘接触的一侧相反的一侧包括CuNi合金层电极焊盘，含有15〜60at％的Cu和40〜85at％的Ni的CuNi合金层。

3. 发明申请

US20080001288A1 Semiconductor Device and Manufacturing Method Thereof, Semiconductor Package, and Electronic Apparatus 审中-公开
标题翻译：半导体器件及其制造方法，半导体封装和电子设备
公开(公告)号：US20080001288A1
公开(公告)日：2008-01-03
申请号：US11720066
申请日：2005-11-25
申请人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
IPC分类号： H01L23/52 , H01L21/4763 , H01L23/48
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1319 , H01L2224/132 , H01L2224/133 , H01L2224/1358 , H01L2224/136 , H01L2224/16 , H01L2224/83102 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H05K1/0271 , H05K3/244 , H05K3/3436 , H05K2201/0212 , Y02P70/613 , H01L2924/01015 , H01L2924/00 , H01L2224/11
摘要： A terminal pad is formed on an active surface of an LSI chip, and a composite barrier metal layer is provided over this terminal pad. In the composite barrier metal layer, a plurality of low-elasticity particles composed of a silicone resin is dispersed throughout a metal base phase composed of NiP. The composite barrier metal layer has a thickness of, e.g., 3 μm, and the low-elasticity particles have a diameter of, e.g., 1 μm. A semiconductor device is mounted on a wiring board by bonding a solder bump to the composite barrier metal layer. The low-elasticity particles are thereby allowed to deform according to the applied stress when the semiconductor device is bonded to the wiring board via the solder bump, whereby the stress can be absorbed.
摘要翻译：在LSI芯片的有源面上形成端子焊盘，在该端子焊盘上设置复合阻挡金属层。在复合阻挡金属层中，将由硅树脂构成的多个低弹性粒子分散在由NiP构成的金属基体相中。复合阻挡金属层具有例如3μm的厚度，低弹性颗粒的直径例如为1μm。通过将焊料凸块粘合到复合阻挡金属层上，将半导体器件安装在布线板上。因此，当半导体器件通过焊料凸块接合到布线板时，低弹性粒子根据施加的应力而变形，从而能够吸收应力。

4. 发明申请

US20080224271A1 Semiconductor Device and Method of Manufacturing Same, Wiring Board and Method of Manufacturing Same, Semiconductor Package, and Electronic Device 审中-公开
标题翻译：半导体器件及其制造方法，接线板及其制造方法，半导体封装和电子器件
公开(公告)号：US20080224271A1
公开(公告)日：2008-09-18
申请号：US11722702
申请日：2005-12-21
申请人： Yoshimichi Sogawa , Takao Yamazaki , Ichirou Hazeyama , Sakae Kitajou , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Ichirou Hazeyama , Sakae Kitajou , Nobuaki Takahashi
IPC分类号： H01L23/48 , H05K1/00 , H05K3/42 , H01L21/4763
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/3171 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05009 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/0557 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/13025 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2924/1433 , H01L2924/19041 , Y10T29/49165 , H01L2924/013 , H01L2924/00014
摘要： Passivation films 3a, 3b are formed to cover both surfaces of semiconductor substrate 1 which comprises terminal pads 2a, 2b on both surfaces. Openings 3c, 3d are provided at positions on passivation films 3a, 3b which match with terminal pads 2a, 2b. Throughholes 9 are formed inside of openings 3c, 3d to extend through terminal pad 2a, semiconductor substrate 1, and terminal pad 2b. Insulating layer 4 made of SiO2, SiN, SiO, or the like is formed on the inner surfaces of throughholes 9. Buffer layer 5 made of a conductive adhesive is formed to cover insulating layer 4 and terminal pads 2a, 2b in openings 3c, 3d. Further, conductive layer 6 made of a metal film is formed on buffer layer 5 by electrolytic plating, non-electrolytic plating, or the like.
摘要翻译：钝化膜3a，3b形成为覆盖包括两个表面上的端子焊盘2a，2b的半导体衬底1的两个表面。在与端子焊盘2a，2b配合的钝化膜3a，3b上的位置设置开口3c，3d。通孔9形成在开口3c，3d的内部，以延伸通过端子焊盘2a，半导体衬底1和端子焊盘2b。在通孔9的内表面上形成由SiO 2，SiN，SiO等构成的绝缘层4。形成由导电粘合剂制成的缓冲层5以覆盖开口3c，3d中的绝缘层4和端子焊盘2a，2b。此外，通过电解电镀，非电解电镀等在缓冲层5上形成由金属膜制成的导电层6。

5. 发明授权

US09758594B2 Stable multivalent antibody 有权
公开(公告)号：US09758594B2
公开(公告)日：2017-09-12
申请号：US12989600
申请日：2009-04-27
申请人： Nobuaki Takahashi
发明人： Nobuaki Takahashi
IPC分类号： C07K16/28 , C07K16/00 , C07K16/46 , A61K39/395
CPC分类号： C07K16/468 , A61K39/39591 , C07K16/2818 , C07K16/2878 , C07K2317/51 , C07K2317/56 , C07K2317/622 , C07K2317/624 , C07K2317/626 , C07K2317/64 , C07K2319/00
摘要： The present invention relates to a multivalent antibody comprising multiple heavy chain variable regions of antibody linked to each other via a linker comprising an amino acid sequence encoding an immunoglobulin domain or a fragment thereof.

6. 发明授权

US09059429B2 Manufacturing method for organic electroluminescent panel and organic electroluminescent panel manufactured using the same 有权
标题翻译：使用其制造的有机电致发光面板和有机电致发光面板的制造方法
公开(公告)号：US09059429B2
公开(公告)日：2015-06-16
申请号：US13640355
申请日：2011-04-18
申请人： Masaaki Murayama , Nobuaki Takahashi , Daisuke Numakura
发明人： Masaaki Murayama , Nobuaki Takahashi , Daisuke Numakura
IPC分类号： H01J9/00 , H01L51/52
CPC分类号： H01L51/5246
摘要： A simple manufacturing method for an organic electroluminescent panel in which organic electroluminescent elements are arranged and sealed by a sealing adhesive. The electroluminescent panel has excellent sealing properties and excellent durability as a result of the organic electroluminescent elements being adhered to one another by a heat-curable adhesive. The manufacturing method is for an organic electroluminescent panel in which at least a first electrode, an organic functional layer containing a light-emitting layer, an organic electroluminescent element having a second electrode, and a sealing substrate are bonded together on a substrate by the heat-curable adhesive. The method includes forming a heat-curable adhesive layer on the sealing substrate, subjecting the heat-curable adhesive layer formed on the sealing substrate to pre-heating treatment, bonding the pre-heated heat-curable adhesive layer to the organic electroluminescent element, and subjecting the heat-curable adhesive layer to heat curing, in the given order.
摘要翻译：一种有机电致发光面板的简单制造方法，其中有机电致发光元件由密封胶布置和密封。电致发光面板由于有机电致发光元件通过热固性粘合剂彼此粘合而具有优异的密封性和优异的耐久性。该制造方法用于有机电致发光面板，其中至少第一电极，含有发光层的有机功能层，具有第二电极的有机电致发光元件和密封基板通过热量在基板上接合在一起可固化粘合剂。该方法包括在密封基板上形成热固性粘合剂层，对形成在密封基板上的热固性粘合剂层进行预热处理，将预热的可热固化粘合剂层接合到有机电致发光元件，以及以给定的顺序对热固性粘合剂层进行热固化。

7. 发明授权

US08911726B2 Stabilized human Igg4 antibodies 有权
标题翻译：稳定的人Igg4抗体
公开(公告)号：US08911726B2
公开(公告)日：2014-12-16
申请号：US11663340
申请日：2005-09-22
申请人： Nobuaki Takahashi , Hideaki Yoshida
发明人： Nobuaki Takahashi , Hideaki Yoshida
IPC分类号： A61K39/395 , C07K16/28 , C12N15/13 , C07K16/00
CPC分类号： C07K16/2878 , A61K39/39591 , C07K16/00 , C07K2317/21 , C07K2317/24 , C07K2317/52 , C07K2317/56 , C07K2317/76 , C07K2317/94
摘要： A highly stable mutant of human IgG4 antibody is provided. Such antibody is an antibody in which the CH3 domain of human IgG4 is substituted with the CH3 domain of human IgG1 and which exhibits inhibited aggregate formation, an antibody in which the CH3 and CH2 domains of human IgG4 are substituted with the CH3 and CH2 domains of human IgG1, respectively, or an antibody in which arginine at position 409 indicated in the EU index proposed by Kabat et al. of human IgG4 is substituted with lysine and which exhibits inhibited aggregate formation.
摘要翻译：提供了高度稳定的人IgG4抗体突变体。这样的抗体是其中人IgG4的CH3结构域被人IgG1的CH3结构域取代并且表现出抑制聚集体形成的抗体，其中人IgG4的CH 3和CH 2结构域被CH 3和CH 2结构域所取代的抗体或者其中在Kabat等人提出的欧盟指标中指出的409位精氨酸的抗体。的人IgG4被赖氨酸取代，并且其表现出抑制的聚集体形成。

8. 发明授权

US08728950B2 Coating method, and organic electroluminescence element 有权
标题翻译：涂布方法和有机电致发光元件
公开(公告)号：US08728950B2
公开(公告)日：2014-05-20
申请号：US13260068
申请日：2010-06-15
申请人： Shigetoshi Kawabe , Nobuaki Takahashi
发明人： Shigetoshi Kawabe , Nobuaki Takahashi
IPC分类号： H01L21/31
CPC分类号： H01L51/0004 , B05C5/025 , B05C5/0254 , B05D1/265 , B05D5/06 , H01L51/56
摘要： Disclosed are a coating method of forming a coating with a stable thickness from a coating solution with a low viscosity employing a slit-type die coater and an organic electroluminescence element prepared employing the coating method. The coating method employing a slit-type die coater comprises the steps of allowing a lip tip of the slit-type die coater to bring close to the substrate to form a coating solution bead between the lip tip and the substrate, and coating on the substrate a coating solution ejected from a slit outlet at the lip tip while relatively moving the slit-type die coater and the substrate, thereby forming at least two coating layers in the stripe shape, featured in that the lip tip has at least one groove in the coating region in the coating width direction, and a pressure at the slit outlet of the coating solution of the bead is negative or zero.
摘要翻译：公开了使用狭缝型模涂机和使用涂布法制备的有机电致发光元件，从具有低粘度的涂布溶液形成具有稳定厚度的涂层的涂布方法。使用狭缝型模涂机的涂布方法包括以下步骤：使狭缝型模涂机的唇尖靠近基板，以在唇尖和基板之间形成涂布溶液珠，并在基板上涂布在狭缝型模具涂布机和基板相对移动的同时从唇尖处的狭缝出口喷射的涂布溶液，从而形成至少两条条状涂层，其特征在于，唇尖在其中具有至少一个凹槽在涂布宽度方向上的涂布区域，珠的涂布溶液的狭缝出口处的压力为负或为零。

9. 发明申请

US20130315435A1 SPEAKER EDGE, METHOD FOR MANUFACTURING SAME AND SPEAKER 审中-公开
标题翻译：扬声器边缘，其制造方法和扬声器
公开(公告)号：US20130315435A1
公开(公告)日：2013-11-28
申请号：US13990721
申请日：2010-11-30
申请人： Masatoshi Sato , Nobuaki Takahashi , Masaru Nakagawa , Teruaki Kaiya , Junichi Sato
发明人： Masatoshi Sato , Nobuaki Takahashi , Masaru Nakagawa , Teruaki Kaiya , Junichi Sato
IPC分类号： H04R7/16 , H04R7/02
CPC分类号： H04R7/20 , B32B5/22 , B32B7/02 , B32B27/12 , H04R7/02 , H04R7/16 , H04R31/003 , H04R2231/001 , H04R2231/003 , H04R2307/204 , H04R2307/207 , H04R2499/11 , H04R2499/13 , H04R2499/15
摘要： A speaker edge includes a resin layer including a resin member and a fiber layer including a tangled fiber body. A melting temperature of the tangled fiber body is higher than a melting temperature of the resin member. The hardness of the tangled fiber body is lower than the hardness of the resin member.
摘要翻译：扬声器边缘包括包括树脂构件的树脂层和包括缠结纤维体的纤维层。缠结纤维体的熔融温度高于树脂部件的熔融温度。缠结纤维体的硬度低于树脂部件的硬度。

10. 发明授权

US08426311B2 Method and apparatus for manufacturing semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US08426311B2
公开(公告)日：2013-04-23
申请号：US12801458
申请日：2010-06-09
申请人： Nobuaki Takahashi , Masahiro Komuro
发明人： Nobuaki Takahashi , Masahiro Komuro
IPC分类号： H01L21/445
CPC分类号： C23C18/1651 , C23C18/1632 , C23C18/32 , C23C18/54 , H01L21/288 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05556 , H01L2224/05644 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/3025 , H01L2224/45099 , H01L2224/05599 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming a laminated structure of a plurality of metal films on a semiconductor substrate using an electroless plating method. The forming of the metal films includes: performing an electroless plating process including a reduction reaction using a first plating tank; and performing an electroless plating process by only a substitution reaction using a second plating tank. The electroless plating process including the reduction reaction that is performed using the first plating tank is performed in a shading environment, and the electroless plating process performed by only the substitution reaction using the second plating tank is performed in a non-shading environment.
摘要翻译：一种半导体器件的制造方法包括使用无电镀法在半导体衬底上形成多个金属膜的叠层结构。金属膜的形成包括：使用第一镀槽进行包括还原反应的无电镀处理; 并且仅使用第二镀槽进行取代反应进行化学镀处理。包括使用第一镀槽进行的还原反应的化学镀处理在遮蔽环境中进行，并且在非遮蔽环境中进行仅使用第二镀槽的取代反应进行的化学镀处理。

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