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1. 发明授权

US06369050B1 Antibacterial agents 失效
标题翻译：抗菌剂
公开(公告)号：US06369050B1
公开(公告)日：2002-04-09
申请号：US09647925
申请日：2000-11-17
申请人： Yoshimi Matsumoto , Shuichi Tawara , Hitoshi Nishio , Takashi Harimoto , Ryoji Sekiyama
发明人： Yoshimi Matsumoto , Shuichi Tawara , Hitoshi Nishio , Takashi Harimoto , Ryoji Sekiyama
IPC分类号： A61K31395
CPC分类号： A61K31/546 , A61K31/43 , A61K31/545 , A61K2300/00
摘要： The invention provides an antimicrobial agent capable of producing an excellent effect in the prevention or treatment of bacteria of two or more genera selected from among Streptococcus, Moraxella, Haemophilus, Klebsiella and the like. The agent comprises a penicillin antibiotic, in particular amoxicillin, and a cephem antibiotic, in particular cefixime or cefdinir. The antimicrobial agent of the invention is administered in the form of a mixed preparation containing both or in the form of individual preparations respectively containing them for combined administration.
摘要翻译：本发明提供能够在预防或治疗选自链球菌属，莫拉氏菌属，嗜血杆菌属，克雷伯菌属等中的两种以上的细菌方面产生优异效果的抗微生物剂。该试剂包括青霉素抗生素，特别是阿莫西林，和头孢类抗生素，特别是头孢克肟或头孢地尼。本发明的抗微生物剂以混合制剂的形式给药，所述混合制剂含有分别含有它们用于联合给药的单独制剂或以其形式存在。

2. 发明授权

US06461444B1 Method and apparatus for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06461444B1
公开(公告)日：2002-10-08
申请号：US09531933
申请日：2000-03-21
申请人： Hitoshi Nishio , Hideo Yamagishi , Masataka Kondo
发明人： Hitoshi Nishio , Hideo Yamagishi , Masataka Kondo
IPC分类号： B08B304
CPC分类号： H01L21/02576 , C23C16/46 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521 , Y10S134/902
摘要： Disclosed is a method of manufacturing a semiconductor device, in which a substrate is successively transferred through a first film-forming chamber for forming a semiconductor layer of a first conductivity type, a second film-forming chamber for forming an i-type semiconductor layer, and a third film-forming chamber for forming a semiconductor layer of a second conductivity type, thereby forming successively a semiconductor layer of a first conductivity type, an i-type semiconductor layer, and a semiconductor layer of a second conductivity type on the substrate. The method comprises the step of simultaneously transferring the substrates arranged within the first, second and third film-forming chambers and each having a semiconductor layer into adjacent chambers on the downstream side.
摘要翻译：公开了一种制造半导体器件的方法，其中通过用于形成第一导电类型的半导体层的第一成膜室，用于形成i型半导体层的第二成膜室连续转移基板，以及第三成膜室，用于形成第二导电类型的半导体层，从而在衬底上连续形成第一导电类型的半导体层，第二导电类型的半导体层和i型半导体层。该方法包括将布置在第一，第二和第三成膜室内的每个具有半导体层的基板同时转移到下游侧的相邻室中的步骤。

3. 发明授权

US5264710A Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals 失效
标题翻译：非晶半导体，使用氢自由基的非晶半导体器件
公开(公告)号：US5264710A
公开(公告)日：1993-11-23
申请号：US864944
申请日：1992-04-07
申请人： Hideo Yamagishi , Akihiko Hiroe , Hitoshi Nishio , Keiko Miki , Kazunori Tsuge , Yoshihisa Tawada
发明人： Hideo Yamagishi , Akihiko Hiroe , Hitoshi Nishio , Keiko Miki , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L21/205 , H01L21/30 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/3003 , H01L31/204 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.
摘要翻译：在形成薄膜期间或之后，将非晶半导体薄膜暴露于氢自由基的气氛中，或者在形成时在300-700nm的波长下进行密度不小于10W / cm 2的光照射薄膜。获得的薄膜具有改善的，即较小的光劣化。使用上述薄膜的半导体器件优选地应用于太阳能电池或薄膜晶体管。

4. 发明授权

US06315874B1 Method of depositing thin film of metal oxide by magnetron sputtering apparatus 有权
标题翻译：用磁控溅射装置沉积金属氧化物薄膜的方法
公开(公告)号：US06315874B1
公开(公告)日：2001-11-13
申请号：US09491183
申请日：2000-01-25
申请人： Takayuki Suzuki , Hitoshi Nishio
发明人： Takayuki Suzuki , Hitoshi Nishio
IPC分类号： C23C1434
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A method of depositing a thin film of metal oxide by a magnetron sputtering apparatus with a mobile magnet for creating a magnetic field reciprocating across a film deposition region, is characterized in that the magnet reciprocates no more than twice in depositing a single thin film of metal oxide.
摘要翻译：通过具有用于产生在膜沉积区域上往复运动的磁场的可移动磁体的磁控溅射装置沉积金属氧化物薄膜的方法的特征在于，磁体在沉积单个金属薄膜时往复运动不超过两次氧化物。

5. 发明授权

US4965225A Method of stabilizing amorphous semiconductors 失效
标题翻译：稳定非晶半导体的方法
公开(公告)号：US4965225A
公开(公告)日：1990-10-23
申请号：US413916
申请日：1989-09-28
申请人： Hideo Yamagishi , William A. Nevin , Hitoshi Nishio , Keiko Miki , Kazunori Tsuge , Yoshihisa Tawada
发明人： Hideo Yamagishi , William A. Nevin , Hitoshi Nishio , Keiko Miki , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L31/0376 , H01L31/20
CPC分类号： H01L31/03767 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10S136/29
摘要： An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.

6. 发明授权

US06500690B1 Method of producing a thin-film photovoltaic device 有权
标题翻译：制造薄膜光伏器件的方法
公开(公告)号：US06500690B1
公开(公告)日：2002-12-31
申请号：US09536092
申请日：2000-03-24
申请人： Hideo Yamagishi , Hitoshi Nishio , Takayuki Suzuki
发明人： Hideo Yamagishi , Hitoshi Nishio , Takayuki Suzuki
IPC分类号： H01L3104
CPC分类号： H01L31/052 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： A method is provided for producing a thin-film photovoltaic device which has a rear electrode including a transparent conductive rear layer and a light-reflective metallic layer. In forming the light-reflective metallic layer, a first plasma region including fine particles of zinc oxide and a second plasma region including fine particles of silver are formed in a chamber at a sputtering gas pressure of about 0.1 to about 0.27 Pa. Then, the substrate is passed over the first and second plasma regions formed in the chamber to form a bonding layer comprising the zinc oxide and a light-reflective metallic layer comprising the silver, thereby providing the rear electrode having the transparent conductive rear layer, the bonding layer and the light-reflective metallic layer.
摘要翻译：提供一种制造薄膜光电器件的方法，该薄膜光伏器件具有包括透明导电后层和光反射金属层的后电极。在形成光反射金属层时，在室内以大约0.1〜0.27Pa的溅射气体压力形成包含氧化锌微粒子和包含细小银粒子的第二等离子体区域的第一等离子体区域，衬底通过形成在室中的第一等离子体区域和第二等离子体区域，以形成包含氧化锌和包含银的光反射金属层的结合层，从而提供具有透明导电后层的后电极，接合层和光反射金属层。

7. 发明授权

US5015838A Color sensor having laminated semiconductor layers 失效
标题翻译：具有层叠半导体层的彩色传感器
公开(公告)号：US5015838A
公开(公告)日：1991-05-14
申请号：US294625
申请日：1989-01-27
申请人： Hideo Yamagishi , Akihiko Hiroe , Hitoshi Nishio , Satoru Murakami , Keiko Miki , Minori Yamaguchi , Seishiro Mizukami , Yoshihisa Tawada
发明人： Hideo Yamagishi , Akihiko Hiroe , Hitoshi Nishio , Satoru Murakami , Keiko Miki , Minori Yamaguchi , Seishiro Mizukami , Yoshihisa Tawada
IPC分类号： G01J3/50 , H01L27/14 , H01L31/075 , H01L31/10 , H01L31/101
CPC分类号： H01L31/076 , H01L31/101 , Y02E10/548
摘要： A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.

8. 发明授权

US06252157B1 Amorphous silicon-based thin film photovoltaic device 有权
标题翻译：非晶硅基薄膜光伏器件
公开(公告)号：US06252157B1
公开(公告)日：2001-06-26
申请号：US09524842
申请日：2000-03-14
申请人： Hitoshi Nishio
发明人： Hitoshi Nishio
IPC分类号： H01L310376
CPC分类号： H01L31/02162 , H01L31/03762 , Y02E10/548
摘要： An amorphous silicon-based thin film photovoltaic device having a glass substrate and a laminate structure formed on the glass substrate and consisting of a transparent electrode, a semiconductor layer containing an amorphous silicon-based semiconductor and a back electrode, in which the glass substrate has a transmittance of 88 to 90% for light having a wavelength of 700 nm and 84 to 87% for light having a wavelength of 800 nm.
摘要翻译：一种非晶硅系薄膜光电器件，具有玻璃基板和叠层结构，该玻璃基板和玻璃基板上形成有由玻璃基板构成的透明电极，含有非晶硅系半导体的半导体层和背面电极，波长为700nm的光的透射率为88〜90％，波长为800nm的光的透射率为84〜87％。

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