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    • 1. 发明授权
    • Transporting apparatus for sheets of original and recording-sheet
supplying apparatus
    • 原稿和记录纸供应装置的输送装置
    • US5099291A
    • 1992-03-24
    • US611054
    • 1990-11-09
    • Yoshiki YoshiokaMasami YamadaHiroyuki TsujiTadashi FujiokaKoji Ujino
    • Yoshiki YoshiokaMasami YamadaHiroyuki TsujiTadashi FujiokaKoji Ujino
    • G03G15/00
    • G03G15/602G03G15/50G03G15/60
    • An image forming apparatus which has a contact glass, an original transporting part for transporting a sheet of original onto the contact glass, an optical exposure system for scanning the sheet of original placed on the contact glass by reciprocating movement below the contact glass, an image forming part for forming an image of the original obtained by the optical exposure system on a recording sheet, and a part for supplying the recording sheet to the image forming part. The original transporting part comprises an original storing part for storing sheets of original; means for transporting a sheet of original from the original storing part onto the contact glass; means for detecting the passage of the sheet of original, provided in the sheet transporting means; and means for outputting an original-exchange completion signal to the image forming apparatus after the passage detecting means detects the passage of the sheet of original and before the sheet transporting means positions the sheet of original onto a predetermined portion of said contact glass. The recording-sheet supply part comprises means for judging whether a next sheet of original to be transported to the contact glass exists; means for transporting a recording sheet to the image forming part; and means for controlling the transporting means whereby the recording sheet transporting means is begun before the optical exposure system starts to return, if a next sheet of original exists.
    • 一种图像形成装置,其具有接触玻璃,用于将原稿输送到接触玻璃上的原稿传送部件,用于通过在接触玻璃下方往复运动来放置在接触玻璃上的原稿的光学曝光系统,图像 形成部件,用于将通过光学曝光系统获得的原稿的图像形成在记录纸上,以及用于将记录纸张供给到图像形成部分的部分。 原始传送部分包括用于存储原稿的原稿存放部分; 用于将原稿从原始存储部分运送到接触玻璃上的装置; 用于检测纸张传送装置中设置的原稿片的通过的装置; 以及用于在通过检测装置检测到原稿片通过并且纸张传送装置将原稿放置在所述接触玻璃的预定部分上之前将图像形成装置输出原始交换完成信号的装置。 记录纸供给部分包括用于判断是否存在要运送到接触玻璃杯的下一张原稿的装置; 用于将记录纸传送到图像形成部件的装置; 以及如果存在下一张原稿,则控制传送装置的装置,由此在光学曝光系统开始返回之前开始记录纸传送装置。
    • 10. 发明授权
    • Light-emitting semiconductor device using group III nitride compound
    • 使用III族氮化物化合物的发光半导体器件
    • US5652438A
    • 1997-07-29
    • US504340
    • 1995-07-19
    • Michinari SassaMakoto TamakiMasayoshi KoikeNaoki ShibataMasami YamadaTakahide Oshio
    • Michinari SassaMakoto TamakiMasayoshi KoikeNaoki ShibataMasami YamadaTakahide Oshio
    • H01L33/12H01L33/32H01L33/40H01L33/62H01L33/00
    • H01L33/38H01L33/32H01L33/325H01L2224/48463H01L33/382H01L33/40
    • A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.
    • 发光半导体器件(10)连续地具有蓝宝石衬底(1),AlN缓冲层(2),高载流子(n型)掺杂的硅(Si)掺杂的GaN n +层(3), 锌(Zn)和Si掺杂(Al x Ga 1-x 1)y 1 In 1-y 1 N发射层(5)的Si掺杂(AlX2Ga1-x2)y2In1-y2N n +层(4) 和掺杂Mg的(Alx2Ga1-x2)y2In1-y2N p层(6)。 AlN缓冲层(2)具有500厚度。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 n +层(4)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 发射层(5)厚约0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×10 17 / cm 3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 引线(21,22)通过楔形接合方法与电极(7,8)连接,以期望减少电极位于其上的器件的发光侧的电极的表面积,从而增加光 从设备发射。