会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Image forming apparatus with endless transfer member
    • 具有无端传送构件的图像形成装置
    • US5485257A
    • 1996-01-16
    • US326003
    • 1994-10-19
    • Masahide UedaTomoo IzumiHiroyuki YamasakiAtsuto HiraiMasahiko MatsuuraEiichi SanoYoshihisa TerasakaMasami YamadaSatoshi Yoshida
    • Masahide UedaTomoo IzumiHiroyuki YamasakiAtsuto HiraiMasahiko MatsuuraEiichi SanoYoshihisa TerasakaMasami YamadaSatoshi Yoshida
    • G03G15/01G03G15/00G03G15/16G03G21/00H04N1/00H04N1/29G03G15/14
    • G03G15/50G03G15/1605H04N1/295
    • The present invention relates to a method of producing a plurality sets of prints from a plural-page original in an image forming apparatus having an endless transfer member onto which images are transferred from an image retaining member. The endless transfer member is operable to support a predetermined number (X) of images during one cyclic movement thereof. In this method, a first printing operation is executed in which the predetermined number (X) of images of a first page of the original are formed on the endless transfer member during one cyclic movement thereof when a desired number (Y) of sets of prints exceeds said predetermined number (X). Second, the first printing operation is repeated until a remaining number (M) of image(s) of the first page becomes less than said predetermined number (X). Third, a second printing operation is executed in which the remaining number (M) of image(s) of the first page and a calculated number (X-M) of image(s) of a second page of the original are formed on said endless transfer member during one cyclic movement thereof after the remaining number (M) of image(s) of the first page becomes less than the predetermined number (X).
    • 本发明涉及一种在图像形成装置中从多页原稿生产多组印刷品的方法,该图像形成装置具有从图像保持部件转印到其上的环形转印部件。 无端传送构件可操作以在其一次循环移动期间支撑预定数量(X)的图像。 在该方法中,执行第一打印操作,其中,当期望的数量(Y)的打印集合(Y)的一个循环移动期间,原稿的第一页的预定数量(X)的图像形成在环形转印部件上时, 超过所述预定数(X)。 其次,重复第一打印操作,直到第一页的图像的剩余数(M)变得小于所述预定数(X)为止。 第三,执行第二打印操作,其中在所述循环传送上形成第一页的图像的剩余数量(M)和原稿的第二页的图像的计算数(XM) 在第一页的图像的剩余数(M)变得小于预定数量(X)之后的一个循环移动期间。
    • 10. 发明授权
    • Light-emitting semiconductor device using group III nitride compound
    • 使用III族氮化物化合物的发光半导体器件
    • US5652438A
    • 1997-07-29
    • US504340
    • 1995-07-19
    • Michinari SassaMakoto TamakiMasayoshi KoikeNaoki ShibataMasami YamadaTakahide Oshio
    • Michinari SassaMakoto TamakiMasayoshi KoikeNaoki ShibataMasami YamadaTakahide Oshio
    • H01L33/12H01L33/32H01L33/40H01L33/62H01L33/00
    • H01L33/38H01L33/32H01L33/325H01L2224/48463H01L33/382H01L33/40
    • A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.
    • 发光半导体器件(10)连续地具有蓝宝石衬底(1),AlN缓冲层(2),高载流子(n型)掺杂的硅(Si)掺杂的GaN n +层(3), 锌(Zn)和Si掺杂(Al x Ga 1-x 1)y 1 In 1-y 1 N发射层(5)的Si掺杂(AlX2Ga1-x2)y2In1-y2N n +层(4) 和掺杂Mg的(Alx2Ga1-x2)y2In1-y2N p层(6)。 AlN缓冲层(2)具有500厚度。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 n +层(4)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 发射层(5)厚约0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×10 17 / cm 3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 引线(21,22)通过楔形接合方法与电极(7,8)连接,以期望减少电极位于其上的器件的发光侧的电极的表面积,从而增加光 从设备发射。