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1. 发明授权

US5500077A Method of polishing/flattening diamond 失效
标题翻译：抛光/平整钻石的方法
公开(公告)号：US5500077A
公开(公告)日：1996-03-19
申请号：US208169
申请日：1994-03-08
申请人： Yoshiki Nishibayashi , Shinichi Shikata
发明人： Yoshiki Nishibayashi , Shinichi Shikata
IPC分类号： C30B33/00 , B44C1/22
CPC分类号： C30B33/00 , C30B29/04
摘要： A method of flattening diamond, including: forming a flat coating comprising a material different from diamond, on a surface of diamond having unevenness; and removing the coating and the unevenness of the surface of diamond by dry etching under a condition such that both of the coating and the diamond can be etched, thereby to smooth the surface of the diamond.
摘要翻译：一种使金刚石变平的方法，包括：在具有凹凸的金刚石的表面上形成包含不同于金刚石的材料的平坦涂层; 并且通过干蚀刻在可以蚀刻涂层和金刚石两者的条件下去除涂层和金刚石表面的不均匀性，从而使金刚石的表面光滑。

2. 发明授权

US5382809A Semiconductor device including semiconductor diamond 失效
标题翻译：半导体器件包括半导体金刚石
公开(公告)号：US5382809A
公开(公告)日：1995-01-17
申请号：US118940
申请日：1993-09-09
申请人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shinichi Shikata
发明人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shinichi Shikata
IPC分类号： H01L21/04 , H01L21/205 , H01L29/808 , H01L29/78 , H01L29/16 , H01L29/167
CPC分类号： H01L29/808 , H01L21/02376 , H01L21/02381 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/0415 , H01L29/66045
摘要： A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a gate electrode disposed on the p-type diamond layer. An intermediate region comprising diamond doped with at least an n-type dopant such as nitrogen atoms, is formed between the channel region and the gate electrode.
摘要翻译：具有MISFET类结构的半导体器件。半导体器件包括：p型半导体金刚石层，设置在绝缘金刚石衬底上，用于提供沟道区; 以及设置在p型金刚石层上的漏电极，源电极和栅电极。在沟道区域和栅电极之间形成包括掺杂有至少n型掺杂剂如氮原子的金刚石的中间区域。

3. 发明授权

US5344526A Method for etching diamond 失效
标题翻译：蚀刻金刚石的方法
公开(公告)号：US5344526A
公开(公告)日：1994-09-06
申请号：US123061
申请日：1993-09-16
申请人： Yoshiki Nishibayashi , Shinichi Shikata
发明人： Yoshiki Nishibayashi , Shinichi Shikata
IPC分类号： C23F4/00 , B81C99/00 , C04B41/53 , C04B41/91 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22
CPC分类号： H01L21/3065 , B81C1/00531 , C04B41/5338 , C04B41/5346 , C04B41/91 , B81B2201/035 , B81C2201/0132
摘要： A diamond surface is selectively etched by forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, in which a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.
摘要翻译：通过在金刚石的表面上形成掩模来选择性地蚀刻金刚石表面，并且用含氧气体和惰性气体的混合物蚀刻金刚石表面，其中以O 2计的氧浓度为0.01至20％基于混合物的总体积。

4. 发明申请

US20090160307A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金刚石电子源及其制造方法
公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/16 , H01J9/02
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

5. 发明申请

US20050202665A1 Method of fabricating n-type semiconductor diamond, and semiconductor diamond 有权
标题翻译：制造n型半导体金刚石和半导体金刚石的方法
公开(公告)号：US20050202665A1
公开(公告)日：2005-09-15
申请号：US11013450
申请日：2004-12-17
申请人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
发明人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
IPC分类号： C30B25/02 , C30B29/04 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/44
CPC分类号： C30B25/02 , C30B29/04 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02494 , H01L21/02527 , H01L21/02576 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/041 , H01L29/66022 , H01L29/66037
摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.
摘要翻译：通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。

6. 发明授权

US06709730B2 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

7. 发明授权

US6031285A Heat sink for semiconductors and manufacturing process thereof 失效
标题翻译：半导体散热片及其制造工艺
公开(公告)号：US6031285A
公开(公告)日：2000-02-29
申请号：US120453
申请日：1998-07-23
申请人： Yoshiki Nishibayashi
发明人： Yoshiki Nishibayashi
IPC分类号： B22D19/14 , B22F7/00 , C04B35/52 , C22C26/00 , H01L21/48 , H01L23/36 , H01L23/373 , H05K7/20 , H01L23/10
CPC分类号： H01L23/3733 , C22C26/00 , H01L21/4871 , H01L23/3732 , H01L2924/0002 , Y10T428/12806 , Y10T428/252
摘要： A highly heat conductive heat sink comprising diamond particles yet eliminating heat distortion problems caused by the difference in thermal expansion with a semiconductor, and a manufacturing method thereof. Melting of an alloy (C), which comprises a metal (A) of at least one metal selected from the group consisting of Cu, Ag, Au, Al, Mg, and Zn; and a metal (B) of at least one metal selected from the group consisting of the groups 4a and 5a of the Periodic Table and chromium, around diamond particles forms on the surface thereof a metal carbide (B'), which enables the strong bonding between the diamond particles and the metal (A) and thus produces a highly heat conductive heat sink having a much higher thermal conductivity than the metal (A). This structure is attainable by either an infiltration method or sintering method. A special feature, or effectiveness, of the invention lies in that the metal carbide (B') is formed on the surface of the diamond particles at the same time as or after the formation of a metal matrix. It is essential that not less than a quarter of the surface of the diamond particles be covered with the metal carbide (B') and the diamond particles be separated with one another by metal.
摘要翻译：一种包含金刚石颗粒的高导热性散热器及其制造方法，其消除了与半导体的热膨胀差异引起的热变形问题。熔融合金（C），其包含选自Cu，Ag，Au，Al，Mg和Zn中的至少一种金属的金属（A）; 并且选自周期表中的4a和5a族中的至少一种金属的金属（B）和金刚石颗粒周围的铬形成金属碳化物（B'），金属碳化物（B'）能够强结合在金刚石颗粒和金属（A）之间，并且因此产生具有比金属（A）高得多的热导率的高导热性散热器。这种结构可以通过渗透法或烧结法获得。本发明的特殊特征或有效性在于金属碳化物（B'）在形成金属基质的同时或之后形成在金刚石颗粒的表面上。金属碳化物（B'）不得少于四分之一的金刚石颗粒表面被金属碳化物（B'）覆盖，金刚石颗粒彼此分开。

8. 发明授权

US6030595A Process for the production of synthetic diamond 失效
标题翻译：合成金刚石生产工艺
公开(公告)号：US6030595A
公开(公告)日：2000-02-29
申请号：US684725
申请日：1996-07-22
申请人： Hitoshi Sumiya , Shuichi Satoh , Yoshiki Nishibayashi
发明人： Hitoshi Sumiya , Shuichi Satoh , Yoshiki Nishibayashi
IPC分类号： B01J3/06 , C01B31/06 , C01B33/06
CPC分类号： B01J3/062 , C01B31/06 , C01B33/06 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068
摘要： A high purity synthetic diamond with less impurities, crystals defects, strains, etc. can be provided, in which the nitrogen content is at most 10 ppm, preferably at most 0.1 ppm and the boron content is at most 1 ppm, preferably at most 0.1 ppm or in which nitrogen atoms and boron atoms are contained in the crystal and the difference between the number of the nitrogen atoms and that of the boron atoms is at most 1.times.10.sup.17 atoms/cm.sup.3. The strain-free synthetic diamond can be produced by a process for the production of a strain-free synthetic diamond by the temperature gradient method, which comprises using a carbon source having a boron content of at most 10 ppm and a solvent metal having a boron content of at most 1 ppm and adding a nitrogen getter to the solvent metal, thereby synthesizing the diamond.
摘要翻译：可以提供具有较少杂质，晶体缺陷，应变等的高纯度合成金刚石，其中氮含量为至多10ppm，优选至多0.1ppm，硼含量为至多1ppm，优选至多0.1 ppm或其中氮原子和硼原子包含在晶体中，并且氮原子数与硼原子数之间的差异至多为1×10 17 atoms / cm 3。无菌合成金刚石可以通过温度梯度法生产无应变合成金刚石的方法制备，该方法包括使用硼含量至多为10ppm的碳源和具有硼的溶剂金属含量至多1ppm，并向溶剂金属中加入氮气吸收剂，从而合成金刚石。

9. 发明授权

US5757032A Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature 失效
标题翻译：半导体金刚石器件具有改进的金刚石接触，在高温下具有出色的操作稳定性
公开(公告)号：US5757032A
公开(公告)日：1998-05-26
申请号：US510220
申请日：1995-08-02
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
IPC分类号： H01L21/28 , H01L21/04 , H01L29/43 , H01L29/47 , H01L29/872 , H01L31/0312 , H01L23/48 , H01L23/52 , H01L27/095
CPC分类号： H01L21/043 , H01L21/0435
摘要： A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000.degree. C. or higher.
摘要翻译：一种半导体器件，包括形成在半导体金刚石上的电极。电极包括与半导体金刚石的表面接触并且具有100nm或更小的厚度的第一金属部分，并且还包括与第一金属部分接触的第二金属部分，并且具有厚度等于或大于第一金属部分的厚度的四倍。第二金属部分由熔点为1000℃以上的金属制成。

10. 发明授权

US5252840A Semiconductor device having differently doped diamond layers 失效
标题翻译：具有不同掺杂金刚石层的半导体器件
公开(公告)号：US5252840A
公开(公告)日：1993-10-12
申请号：US697438
申请日：1991-05-09
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/205 , H01L29/16 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/161 , H01L29/20
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.

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