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1. 发明授权

US5162886A Hall device 失效
标题翻译：霍尔设备
公开(公告)号：US5162886A
公开(公告)日：1992-11-10
申请号：US697441
申请日：1991-05-09
申请人： Yoshiki Nishibayashi , Hideaki Nakahata , Hiromu Shiomi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Hideaki Nakahata , Hiromu Shiomi , Naoji Fujimori
IPC分类号： G01R33/07 , H01L43/06 , H01L43/10
CPC分类号： H01L43/065 , Y10T428/265 , Y10T428/30
摘要： A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.

2. 发明授权

US5500393A Method for fabricating a schottky junction 失效
标题翻译：制造肖特基结的方法
公开(公告)号：US5500393A
公开(公告)日：1996-03-19
申请号：US184105
申请日：1994-01-21
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/306 , H01L29/16 , H01L29/47 , H01L21/28
CPC分类号： H01L21/02085 , H01L21/0435 , H01L29/1602 , H01L29/47 , Y10S148/017
摘要： The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C--C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.
摘要翻译：金刚石与金属之间的肖特基结的特征导致使用肖特基结的二极管具有大的漏电反向电流和n值远大于1.将形成肖特基结的金刚石表面用氧等离子体或卤素等离子体。氧等离子体或氢等离子体或氢等离子体通过使表面C-C键解耦并赋予所形成的额外键与氢原子来改善金刚石的表面状态，使表面超晶格结构标准化。通过氧或卤素等离子体预处理金刚石可提高二极管性能; 减小反向电流，增加正向电流，并将n值减小到更接近1。

3. 发明授权

US5252840A Semiconductor device having differently doped diamond layers 失效
标题翻译：具有不同掺杂金刚石层的半导体器件
公开(公告)号：US5252840A
公开(公告)日：1993-10-12
申请号：US697438
申请日：1991-05-09
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/205 , H01L29/16 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/161 , H01L29/20
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.

4. 发明授权

US5243199A High frequency device 失效
标题翻译：高频设备
公开(公告)号：US5243199A
公开(公告)日：1993-09-07
申请号：US902788
申请日：1992-06-24
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01L23/373 , H01L23/66 , H01L29/16 , H01L29/864 , H01L29/872
CPC分类号： H01L29/1602 , H01L23/3732 , H01L23/66 , H01L29/864 , H01L29/872 , H01L2924/0002
摘要： Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse bias voltage for amplification or oscillation of high frequency waves. The active semiconductor layers are made of semiconductor diamond. High heat conductivity and high insulation breakdown voltage of diamond heighten the output power of oscillation or amplification.
摘要翻译：改进具有金属层，有源半导体层和其他半导体层的高频器件，其利用由反偏置电压引起的载流子雪崩或载流子注入用于高频波的放大或振荡。有源半导体层由半导体金刚石制成。金刚石的高导热性和高绝缘击穿电压提高了振荡或放大的输出功率。

5. 发明授权

US4982243A Schottky contact 失效
标题翻译：肖特基接触
公开(公告)号：US4982243A
公开(公告)日：1991-01-01
申请号：US329825
申请日：1989-03-28
申请人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
发明人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L29/16 , H01L21/205 , H01L29/04 , H01L29/423 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L33/40 , H01L29/045 , H01L29/47 , H01L29/872 , H01L33/0033 , H01L33/34
摘要： A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
摘要翻译：一种肖特基接触，其包括单晶金刚石基底，形成在所述基底上的外延金刚石层和形成在所述外延金刚石层上的肖特基电极层，其中所述基底具有至少一个抛光表面，其倾斜不大于10° DEG至（100）面，并且所述外延金刚石层形成在所述表面上，提供具有良好耐热性和耐环境性的器件，并且该器件可以容易地高度集成。

6. 发明授权

US5670796A Semiconductor device consisting of a semiconductor material having a deep impurity level 失效
标题翻译：半导体器件由具有深杂质水平的半导体材料构成
公开(公告)号：US5670796A
公开(公告)日：1997-09-23
申请号：US619105
申请日：1996-03-20
申请人： Yoshiki Nishibayashi , Shin-ichi Shikata , Naoji Fujimori , Takeshi Kobayashi
发明人： Yoshiki Nishibayashi , Shin-ichi Shikata , Naoji Fujimori , Takeshi Kobayashi
IPC分类号： C30B29/04 , H01L29/12 , H01L29/15 , H01L29/16 , H01L29/167 , H01L29/207 , H01L29/267 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/157 , H01L29/16 , H01L29/167 , H01L29/207 , H01L29/267
摘要： A semiconductor device has a structure in which doped layers and undoped layers are alternately stacked and is constituted by (a) a semi-insulating substrate, (b) undoped layers consisting of a substantially undoped diamond material, and (c) thin doped layers formed between the undoped layers and consisting of a diamond material doped with B as an impurity. Stable operation characteristics can be obtained within a temperature range from room temperature to a high temperature while a semiconductor material having a deep impurity level is used.
摘要翻译：半导体器件具有这样的结构，其中掺杂层和未掺杂层交替堆叠并且由（a）半绝缘衬底，（b）由基本上未掺杂的金刚石材料组成的未掺杂层，和（c）形成的薄掺杂层在未掺杂的层之间并且由掺杂有B作为杂质的金刚石材料组成。在室温至高温的温度范围内可以获得稳定的操作特性，同时使用具有深度杂质浓度的半导体材料。

7. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

8. 发明授权

US5417798A Etching method 失效
标题翻译：蚀刻方法
公开(公告)号：US5417798A
公开(公告)日：1995-05-23
申请号：US824091
申请日：1992-01-22
申请人： Yoshiki Nishibayashi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/32697 , H01L21/3065 , H01J2237/3348
摘要： Reactive ion etching of diamond using oxygen plasma roughs the surface of diamond due to the strong bombardment of oxygen ions with various kinetic energy. A metal grid with holes is installed between the oxygen plasma and the diamond. Since the metal grid is biased in order to prevent oxygen plasma from being in contact with the diamond, the oxygen ions which have passed the grid will bombard the surface of the diamond with common, low energy. The etched surface becomes smooth.
摘要翻译：使用氧等离子体对金刚石的反应离子蚀刻由于用各种动能对氧离子的强烈轰击而使金刚石的表面粗糙。在氧等离子体和金刚石之间安装有孔洞的金属网格。由于金属网格被偏置以防止氧等离子体与金刚石接触，所以通过栅格的氧离子将以普通的低能量轰击金刚石的表面。被蚀刻的表面变得光滑。

9. 发明授权

US06270898B1 Tool tip and bonding tool comprising the tool tip and control method for the bonding tool 失效
标题翻译：工具尖和焊接工具，其包括工具尖端和用于接合工具的控制方法
公开(公告)号：US06270898B1
公开(公告)日：2001-08-07
申请号：US09180981
申请日：1998-11-18
申请人： Katsuko Yamamoto , Takahisa Iguchi , Yoshiaki Kumazawa , Katsuyuki Tanaka , Hiromu Shiomi , Takashi Tsuno , Naoji Fujimori
发明人： Katsuko Yamamoto , Takahisa Iguchi , Yoshiaki Kumazawa , Katsuyuki Tanaka , Hiromu Shiomi , Takashi Tsuno , Naoji Fujimori
IPC分类号： H01L2160
CPC分类号： H01L21/67138 , B23K26/382 , B23K26/40 , B23K2101/20 , B23K2101/35 , B23K2103/50 , B23K2103/52 , Y10T428/24355 , Y10T428/24628 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926 , Y10T428/26 , Y10T428/30
摘要： A conductive polycrystalline diamond film having specific resistance of at least 1×10−4 &OHgr;cm and less than 1×103 &OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.
摘要翻译：具有至少1×10 -4欧姆·厘米的电阻率和小于1×10 3欧姆·厘米的导电多晶金刚石膜，其膜厚度在至少0.1μm至不大于500μm的范围内，通过气相合成用于压接的表面，与该表面相对的表面或与适用于接合和封装半导体芯片的接合工具尖端的基板上的这些表面相交的至少两个侧表面。

10. 发明授权

US5387310A Method for producing single crystal diamond film 失效
标题翻译：单晶金刚石薄膜的制造方法
公开(公告)号：US5387310A
公开(公告)日：1995-02-07
申请号：US47384
申请日：1993-04-16
申请人： Hiromu Shiomi , Naoji Fujimori
发明人： Hiromu Shiomi , Naoji Fujimori
IPC分类号： C30B29/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04
摘要： A single crystal diamond film having good electrical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas and a carbon-containing compound and epitaxially growing a single crystal diamond film on a single crystal substrate in a vapor phase, wherein a molar ratio of the carbon atoms in the carbon-containing compound to the hydrogen is from 2:100 to 10:100 and a lattice constant of the single crystal substrate satisfies the following relation:.vertline.(a-a.sub.0)/a.vertline..times.100.ltoreq.20 (I)wherein a.sub.0 is the lattice constant of diamond (3.567 .ANG.) and a is a lattice constant of the single crystal substrate.
摘要翻译：具有良好电特性的单晶金刚石薄膜是通过以下步骤制造的：一种包括氢气和含碳化合物的原料气体在气相中在单晶基板上分解外延生长单晶金刚石膜的步骤其中，含碳化合物中的碳原子与氢的摩尔比为2：100〜10：100，单晶基板的晶格常数满足：（a-a0）/ a | x100 =（I）其中a0是金刚石的晶格常数（3.567 ANGSTROM），a是单晶衬底的晶格常数。

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