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1. 发明申请

US20080164802A1 Diamond Electron Emission Cathode, Electron Emission Source, Electron Microscope, And Electron Beam Exposure Device 审中-公开
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US20080164802A1
公开(公告)日：2008-07-10
申请号：US11665455
申请日：2006-06-19
申请人： Yoshiki Nishibayashi , Akihiko Uedo , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Yoshiki Nishibayashi , Akihiko Uedo , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： H01J1/14 , H01L29/16
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are used in electron beam and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and electronic devices that uses such electron emission cathode and electron emission source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode being in a columnar form having a sharpened acute section in one place of an electron emitting portion and being constituted by at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is a n-type semiconductor comprising n-type impurities at 2×1015 cm−3 or higher, the other type is a p-type semiconductor comprising p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined, an electric potential that is negative with respect to the p-type semiconductor is applied with a pair of current introducing terminals to the n-type semiconductor so that electrons flow from the n-type semiconductor to the p-type semiconductor, and the n-type semiconductor has a component in which electrons flow to the electron emitting portion.
摘要翻译：本发明的目的是提供一种使用金刚石的电子发射阴极和电子发射源，并且具有用于电子束和电子束装置以及真空管，特别是电子显微镜的高亮度和小的能量宽度电子束曝光装置和使用这种电子发射阴极和电子发射源的电子装置。根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极呈柱形，在一个电子发射部分的位置具有锐化的锐角部分，并且由至少两个电性能不同的半导体类型。构成半导体的类型之一是包括2×10 15 -3 -3以上的n型杂质的n型半导体，另一种是p型半导体包括2×10 15 cm -3以上的p型杂质，p型半导体和n型半导体接合，相对于向p型半导体施加一对电流引入端子到n型半导体，使得电子从n型半导体流向p型半导体，并且n型半导体具有其中电子流向电子发射部分。

2. 发明申请

US20090160307A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金刚石电子源及其制造方法
公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/16 , H01J9/02
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

3. 发明授权

US08119241B2 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权
标题翻译：具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶
公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比为3％以上，主偏离角为0.50°以上的主表面。具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。

4. 发明授权

US07898161B2 Diamond electron radiation cathode, electron source, electron microscope, and electron beam exposer 失效
标题翻译：金刚石电子辐射阴极，电子源，电子显微镜和电子束曝光机
公开(公告)号：US07898161B2
公开(公告)日：2011-03-01
申请号：US12095430
申请日：2007-06-27
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02
CPC分类号： H01J1/304 , B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3174 , H01J2201/30457 , H01J2237/06341 , H01J2237/26
摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.
摘要翻译：目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大大于0.1 mm2。

5. 发明授权

US07863805B2 Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US07863805B2
公开(公告)日：2011-01-04
申请号：US11665472
申请日：2006-06-19
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02 , H01J9/02 , H01J1/62 , H01J63/04
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.
摘要翻译：可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。金刚石电子放电阴极至少在其一部分具有单晶金刚石。金刚石电子发射阴极具有包括锐化部分和加热部分的柱状。锐化部分具有电子发射部分。电子发射部分和加热部分由金刚石半导体形成，其由含有2×10 15 cm -3的p型杂质或以上的p型半导体形成。电子发射部分具有半导体。在电子发射阴极的表面上形成金属层。金属层至少存在于加热部的一部分。从电子发射部到最接近金属层末端的位置的距离为500μm。一对电流引入端子向加热部分供电以加热加热部分。引入的电子的一部分从电子发射部分发射。

6. 发明授权

US07737614B2 Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US07737614B2
公开(公告)日：2010-06-15
申请号：US11665459
申请日：2006-06-19
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02 , H01J19/06
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.
摘要翻译：目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度，以及使用这种阴极和源的电子设备。根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分并且由电性能不同的至少两种类型的半导体构成。构成半导体的种类之一是含有2×1015cm3以上的n型杂质的n型半导体，另一种是含有2×10 15 cm -3以上的p型杂质的p型半导体， p型半导体和n型半导体结合在一起，加热部分被平行于接合面激励并被一对电流引入端直接加热，并且一些引入的电子从电子发射部分发射。

7. 发明申请

US20090120366A1 MICROWAVE PLASMA CVD DEVICE 审中-公开
标题翻译：微波等离子体CVD装置
公开(公告)号：US20090120366A1
公开(公告)日：2009-05-14
申请号：US12294212
申请日：2007-01-29
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C23C16/54
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238
摘要： The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.
摘要翻译：本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。微波等离子体CVD装置包括：真空室1，其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗22; 以及用于将微波引入真空室的天线部分25，天线部分由位于波导中心的圆棒部分23，开口部分和电介质窗口构成，电极部分24保持电极部分和真空室上部之间的电介质窗口用于真空保持，其中电极部分24的端面形成为比电介质窗口宽，使得电介质窗口被隐藏，并且具有预定尺寸的凹部形成在电极部分24的面对真空室的中心的表面上。

8. 发明申请

US20080116446A1 Electron Emission Element and Electron Emission Element Fabrication Method 失效
标题翻译：电子发射元件和电子发射元件制造方法
公开(公告)号：US20080116446A1
公开(公告)日：2008-05-22
申请号：US11883323
申请日：2006-09-21
申请人： Yoshiyuki Yamamoto , Natsuo Tatsumi , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Natsuo Tatsumi , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01J1/3044 , H01J9/025
摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
摘要翻译：电子发射器件2包括由金刚石制成的电子发射部分6。在电子发射电流值为10μA以上的情况下，电子发射器件2中电子发射电流值超过1小时的偏差在±20％以内。改变电子发射电流值的阶梯状噪声的发生次数每10分钟一步或一次。

9. 发明申请

US20080048544A1 Diamond Electron Emission Cathode, Electron Emission Source, Electron Microscope, and Electron Beam Exposure Device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US20080048544A1
公开(公告)日：2008-02-28
申请号：US11665459
申请日：2006-06-19
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/15
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm-3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.
摘要翻译：目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度，以及使用这种阴极和源的电子设备。根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分并且由电性能不同的至少两种类型的半导体构成。构成半导体的类型之一是在2×10 15 cm 3以上含有n型杂质的n型半导体，另一种是含有在2×10 15 cm -3以上的p型杂质，p型半导体和n型半导体结合在一起，加热部分被平行于并且由一对电流引入端子直接加热，并且一部分引入的电子从电子发射部分发射。

10. 发明申请

US20060177962A1 Process for producing n-type semiconductor diamond and n-type semiconductor diamond 审中-公开
标题翻译：制造n型半导体金刚石和n型半导体金刚石的方法
公开(公告)号：US20060177962A1
公开(公告)日：2006-08-10
申请号：US10541184
申请日：2003-12-22
申请人： Akihiko Namba , Yoshiyuki Yamamoto , Hitoshi Sumiya , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Namba , Yoshiyuki Yamamoto , Hitoshi Sumiya , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01L21/00
CPC分类号： H01L21/0415 , C30B29/04 , H01L21/265 , H01L29/167
摘要： A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800° C. or more to less than 1800° C. to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n-type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 107 Ω/□ or less.
摘要翻译：通过本发明制造n型半导体金刚石的方法的特征在于通过将Li离子注入到Li中并掺入N的金刚石，使得其中含有10ppm将包含在包含10ppm或更多N的单晶金刚石中，或否则，通过注入离子来掺杂具有Li和N离子的单晶金刚石，使得注入后的Li和N浓度各自为10ppm以上的离子注入深度将重叠，然后在金刚石中退火温度范围为800℃以上至小于1800℃，以电激活Li和N并恢复金刚石晶体结构。在本发明中，n型半导体金刚石从晶体表面到相同的深度掺入了Li和N的10ppm以上，其中薄膜电阻为10Ω/ □以下

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