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1. 发明申请

US20090120366A1 MICROWAVE PLASMA CVD DEVICE 审中-公开
标题翻译：微波等离子体CVD装置
公开(公告)号：US20090120366A1
公开(公告)日：2009-05-14
申请号：US12294212
申请日：2007-01-29
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C23C16/54
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238
摘要： The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.
摘要翻译：本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。微波等离子体CVD装置包括：真空室1，其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗22; 以及用于将微波引入真空室的天线部分25，天线部分由位于波导中心的圆棒部分23，开口部分和电介质窗口构成，电极部分24保持电极部分和真空室上部之间的电介质窗口用于真空保持，其中电极部分24的端面形成为比电介质窗口宽，使得电介质窗口被隐藏，并且具有预定尺寸的凹部形成在电极部分24的面对真空室的中心的表面上。

2. 发明授权

US08119241B2 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权
标题翻译：具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶
公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比为3％以上，主偏离角为0.50°以上的主表面。具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。

3. 发明申请

US20090169814A1 METHOD FOR MANUFACTURING DIAMOND MONOCRYSTAL HAVING A THIN FILM, AND DIAMOND MONOCRYSTAL HAVING A THIN FILM 有权
标题翻译：制造具有薄膜的金刚石单晶的方法和具有薄膜的金刚石单晶
公开(公告)号：US20090169814A1
公开(公告)日：2009-07-02
申请号：US12282137
申请日：2007-12-26
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C30B23/00 , H01L21/322 , B32B9/00 , B32B5/00
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：在磷原子/碳原子比为3的条件下，在{111}单晶衬底的主面上，在300K下生长电阻率为300Ω/ cm以下的低电阻磷掺杂外延薄膜的方法％以上，包括主表面的偏角为0.50°以上。具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率电阻磷掺杂金刚石外延薄膜在300K时为300Ω·cm以下。

4. 发明授权

US06709730B2 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

5. 发明授权

US07534360B2 Method of making diamond product and diamond product 失效
公开(公告)号：US07534360B2
公开(公告)日：2009-05-19
申请号：US10774417
申请日：2004-02-10
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： C23F1/00
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

6. 发明授权

US06958571B2 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06958571B2
公开(公告)日：2005-10-25
申请号：US09942101
申请日：2001-08-30
申请人： Yoshiki Nishibayashi , Yutaka Ando , Kiichi Meguro , Takahiro Imai
发明人： Yoshiki Nishibayashi , Yutaka Ando , Kiichi Meguro , Takahiro Imai
IPC分类号： H01J1/304 , H01J9/02 , H01J19/24
CPC分类号： H01J9/025 , H01J1/3044
摘要： A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).
摘要翻译：制造用于从金刚石发射电子的电子发射元件（20）的方法包括在金刚石衬底（21）上形成金刚石柱状构件（25）的第一步骤，以及形成电子发射部分 30），其具有位于比基部（36）更靠近远端侧的基部（36）和尖锐部（32），并通过对柱状部件（25）进行蚀刻处理而发射电子）。

7. 发明申请

US20050000938A1 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US20050000938A1
公开(公告)日：2005-01-06
申请号：US10774417
申请日：2004-02-10
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： C01B31/06 , C30B29/04 , C30B33/00 , H01J1/304 , H01J9/02 , C23F1/00
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

8. 发明授权

US07524372B2 Method for manufacturing diamond single crystal substrate 有权
标题翻译：金刚石单晶基板的制造方法
公开(公告)号：US07524372B2
公开(公告)日：2009-04-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B25/02 , C30B25/18 , C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译：一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

9. 发明授权

US07481879B2 Diamond single crystal substrate manufacturing method and diamond single crystal substrate 有权
标题翻译：金刚石单晶衬底制造方法和金刚石单晶衬底
公开(公告)号：US07481879B2
公开(公告)日：2009-01-27
申请号：US11032176
申请日：2005-01-11
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B23/02 , C01B31/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

10. 发明申请

US20050139150A1 Diamond single crystal composite substrate and method for manufacturing the same 有权
标题翻译：金刚石单晶复合基板及其制造方法
公开(公告)号：US20050139150A1
公开(公告)日：2005-06-30
申请号：US10980152
申请日：2004-11-04
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/04 , C30B25/20
摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
摘要翻译：一种金刚石单晶复合基板，其由具有均匀平面取向的多个金刚石单晶基板构成，并且通过气相合成在其上生长金刚石单晶整体并入，其中主体的平面取向偏离从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度，排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度，当金刚石单晶基板并排配置时，所述一个金刚石单晶基板配置在最外周部，并且配置成使得在所述一个的主平面中的<100>方向衬底在所设置的衬底的外周方向上面对，然后通过气相合成生长金刚石单晶使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶，以实现整体的整合。

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