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1. 发明授权

US5569445A Fine acicular .alpha.-ferric oxide and production thereof 失效
标题翻译：细针状α-氧化铁及其生产
公开(公告)号：US5569445A
公开(公告)日：1996-10-29
申请号：US368203
申请日：1994-12-29
申请人： Yoshiki Fukatsu , Shinji Nakahara , Youichi Yamada , Hideji Yamamoto , Tatsuya Hida , Mizuho Wada
发明人： Yoshiki Fukatsu , Shinji Nakahara , Youichi Yamada , Hideji Yamamoto , Tatsuya Hida , Mizuho Wada
IPC分类号： C01G49/06 , G11B5/706 , G11B5/708 , C01G49/02
CPC分类号： G11B5/70642 , C01G49/06 , G11B5/70615 , G11B5/708 , C01P2002/10 , C01P2002/70 , C01P2004/03 , C01P2004/10 , C01P2004/54 , C01P2004/62 , C01P2006/12 , C01P2006/42
摘要： Disclosed herein is fine acicular .alpha.-ferric oxide which has the crystallite diameter (D.sub.1014) in the direction perpendicular to the (1014) plane and the crystallite diameter (D.sub.1120) in the direction perpendicular to the (1120) plane such that their ratio D.sub.1014 /D.sub.1120 is in the range of 1-2, and also has a specific surface area of 40-50 m.sup.2 g. Disclosed also herein is fine acicular .alpha.-ferric oxide which has the crystallite diameter (D.sub.1014) in the direction perpendicular to the (1014) plane and the crystallite diameter (D.sub.1120) in the direction perpendicular to the (1120) plane such that their ratio D.sub.1014 /D.sub.1120 is the range of 1-2, and also has an average aspect ratio of 10-15 and a specific surface area of 20-40 m.sup.2 /g. They are produced by wet process including the step of hydrothermal reaction.
摘要翻译：本文公开了在垂直于（10 + E，ovs 1 + EE 4）面的方向上具有微晶直径（D10 + E，ov1 + EE4）的细针状α-氧化铁和微晶直径（D11 + E，ovs 2 + EE 0）在垂直于（11 + E，ovs 2 + EE 0）平面的方向上使得它们的比率D10 + E，ov1 + EE4 / D11 + E，ov2 + EE0 在1-2的范围内，还具有40-50m 2 g的比表面积。此处还公开了在垂直于（10 + E，ovs 1 + EE 4）面和微晶直径（D11）的方向上具有微晶直径（D10 + E，ov1 + EE4）的精细针状α-氧化铁 + E，ovs 2 + EE 0）在垂直于（11 + E，ovs 2 + EE 0）平面的方向上使得它们的比率D10 + E，ov1 + EE4 / D11 + E，ov2 + EE0 为1-2的范围，平均纵横比为10-15，比表面积为20-40m 2 / g。它们通过湿法制备，包括水热反应步骤。

2. 发明授权

US08580148B2 Phosphor and method for producing same 有权
标题翻译：荧光体及其制造方法
公开(公告)号：US08580148B2
公开(公告)日：2013-11-12
申请号：US10549585
申请日：2004-03-12
申请人： Seiko Hirayama , Keita Kobayashi , Junya Ishii , Mizuho Wada , Shinji Nakahara
发明人： Seiko Hirayama , Keita Kobayashi , Junya Ishii , Mizuho Wada , Shinji Nakahara
IPC分类号： C09K11/77
CPC分类号： C09K11/7734
摘要： It is an object of the present invention to provide an alkaline earth metal aluminate phosphor having good heat resistance and durability against vacuum ultraviolet rays and ultraviolet rays, among others, and a method of producing the same.An alkaline earth metal aluminate phosphor containing bivalent europium as an activator, which contains at least one element (e) selected from the group consisting of indium, tungsten, niobium, bismuth, molybdenum, tantalum, thallium and lead.
摘要翻译：本发明的目的是提供一种对真空紫外线和紫外线具有良好的耐热性和耐久性的碱土金属铝酸盐荧光体及其制造方法。含有二价铕作为活化剂的碱土金属铝酸盐荧光体，其含有选自铟，钨，铌，铋，钼，钽，铊和铅中的至少一种元素（e）。

3. 发明授权

US07989073B2 Epitaxial silicon wafer and fabrication method thereof 有权
标题翻译：外延硅晶片及其制造方法
公开(公告)号：US07989073B2
公开(公告)日：2011-08-02
申请号：US11850591
申请日：2007-09-05
申请人： Takayuki Dohi , Shinji Nakahara , Masaya Sakurai , Masato Sakai
发明人： Takayuki Dohi , Shinji Nakahara , Masaya Sakurai , Masato Sakai
IPC分类号： B32B9/00
CPC分类号： H01L21/02634 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02609 , H01L22/00 , H01L29/045 , H01L29/32 , H01L2924/0002 , Y10S117/902 , H01L2924/00
摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100 } wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.
摘要翻译：提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<110>面的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内，方向。通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。此外，可以抑制{110}晶片中的表面粗糙度劣化。此外，可以测量{110}晶片的表面状态。此外，可以对{110}晶片进行质量评估。

4. 发明申请

US20110031592A1 SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF 有权
标题翻译：硅外延晶片及其生产方法
公开(公告)号：US20110031592A1
公开(公告)日：2011-02-10
申请号：US12988156
申请日：2009-04-17
申请人： Masayuki Ishibashi , Shinji Nakahara , Tetsuro Iwashita
发明人： Masayuki Ishibashi , Shinji Nakahara , Tetsuro Iwashita
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/30625 , C30B25/186 , C30B25/20 , C30B29/06 , C30B33/00 , H01L21/02381 , H01L21/02532 , H01L21/02587 , H01L21/02609
摘要： Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).
摘要翻译：公开了具有良好雾度水平的晶片，尽管晶片中{110}面的倾斜角小。还公开了一种用于制造硅外延晶片的方法，其包括以下步骤：在具有偏离角小于1度的{110}面的主表面的硅单晶衬底上生长外延层; 并抛光外延层的表面，直到外延层的表面具有0.18ppm或更小的雾度水平（在DWO模式下由SP2测量）。

5. 发明申请

US20110239931A1 EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF 有权
标题翻译：外延硅晶片及其制造方法
公开(公告)号：US20110239931A1
公开(公告)日：2011-10-06
申请号：US13164511
申请日：2011-06-20
申请人： Takayuki Dohi , Shinji Nakahara , Masaya Sakurai , Masato Sakai
发明人： Takayuki Dohi , Shinji Nakahara , Masaya Sakurai , Masato Sakai
IPC分类号： C30B25/20
CPC分类号： H01L21/02634 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02609 , H01L22/00 , H01L29/045 , H01L29/32 , H01L2924/0002 , Y10S117/902 , H01L2924/00
摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.
摘要翻译：提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<100>的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内，方向。通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。此外，可以抑制{110}晶片中的表面粗糙度劣化。此外，可以测量{110}晶片的表面状态。此外，可以对{110}晶片进行质量评估。

6. 发明授权

US06863735B1 Epitaxial growth furnace 失效
标题翻译：外延生长炉
公开(公告)号：US06863735B1
公开(公告)日：2005-03-08
申请号：US09744363
申请日：1999-07-26
申请人： Shinji Nakahara , Masato Imai , Masanori Mayusumi , Kazutoshi Inoue , Shintoshi Gima
发明人： Shinji Nakahara , Masato Imai , Masanori Mayusumi , Kazutoshi Inoue , Shintoshi Gima
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/08 , C30B25/12 , H01L21/205 , H01L21/67 , C23C16/00 , B65G49/07 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45504 , C23C16/4585 , C23C16/4588 , C30B25/08 , C30B25/12 , Y10S414/135 , Y10S414/141
摘要： An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.
摘要翻译：提供外延生长炉，用于在炉的反应室中通过CVD在半导体晶片的表面上形成外延层。炉包括具有用于暴露待外延生长的晶片的表面区域的开口的晶片保持器，适于与所述晶片的在所述表面区域侧的整个周缘的倒角锥形表面接合的开口凸缘以及多个钳口，用于在所述表面区域的背面侧可拆卸地与晶片的外周接合。

7. 发明授权

US06578589B1 Apparatus for manufacturing semiconductor wafer 失效
标题翻译：半导体晶片制造装置
公开(公告)号：US06578589B1
公开(公告)日：2003-06-17
申请号：US09937525
申请日：2001-09-24
申请人： Masanori Mayusumi , Masato Imai , Kazutoshi Inoue , Shinji Nakahara , Shintoshi Gima
发明人： Masanori Mayusumi , Masato Imai , Kazutoshi Inoue , Shinji Nakahara , Shintoshi Gima
IPC分类号： B08B704
CPC分类号： H01L21/67115 , H01L21/67034 , H01L21/6704 , Y10S134/902
摘要： Disclosed is a compact apparatus for manufacturing semiconductor wafers, which is aimed at complete removing of moisture from the wafers after final cleaning while reducing the manufacturing time. The apparatus includes a cleaning chamber (1) for final cleaning, a storage chamber (3) for storing wafers, a transfer chamber (2) communicating with the both cleaning and storage chambers (1, 3), and formed in its upper wall with a heat-conducting window (7), a robot hand (5) and a robot arm (4) for transporting the wafer (W) from the cleaning chamber (1) to the storage chamber (3) within the transfer chamber, infrared lamps (6) arranged to face the window (7) outside the transfer chamber (2) so as to heat the wafer (W) in the course of transportation within the transfer chamber, gas supply ports (8) for producing a laminar flow of inert gas from the storage chamber (3) to the cleaning chamber (1) to expose wafers (W) with the gas, and exhaust ports (9) for exhausting the moisture removed from wafers.
摘要翻译：公开了一种用于制造半导体晶片的紧凑装置，其目的是在最终清洁之后从晶片完全除去水分，同时减少制造时间。该设备包括用于最终清洁的清洁室（1），用于存储晶片的储存室（3），与清洁和储存室（1,3）连通的传送室（2），并在其上壁形成传导窗（7），机器人手（5）和用于将晶片（W）从清洁室（1）传送到传送室内的储存室（3）的机械臂（4），红外灯（6），布置成面对转移室（2）外部的窗口（7），以在输送室内的运输过程中加热晶片（W），用于产生惰性层流的气体供给口（8）从储存室（3）到清洁室（1）的气体，以便与气体一起露出晶片（W），以及用于排出从晶片去除的水分的排气口（9）。

8. 发明授权

US08518848B2 Titanium oxide photocatalyst and method for producing the same 有权
标题翻译：氧化钛光催化剂及其制造方法
公开(公告)号：US08518848B2
公开(公告)日：2013-08-27
申请号：US13408770
申请日：2012-02-29
申请人： Noboru Taniguchi , Shuzo Tokumitsu , Tomohiro Kuroha , Kenichi Tokuhiro , Akio Nakashima , Keita Kobayashi , Shinji Nakahara
发明人： Noboru Taniguchi , Shuzo Tokumitsu , Tomohiro Kuroha , Kenichi Tokuhiro , Akio Nakashima , Keita Kobayashi , Shinji Nakahara
IPC分类号： B01J27/06 , B01J23/00 , C01G23/047
CPC分类号： A61L9/18 , B01J21/063 , B01J27/135 , B01J35/004 , B01J35/1019 , B01J37/26 , C01G23/00 , C01G23/047 , C01P2002/54 , C01P2006/12
摘要： A titanium oxide photocatalyst that is capable of improving a decomposition rate, and a method for producing the same are provided. The titanium oxide photocatalyst of the present invention is a titanium oxide photocatalyst containing at least an anatase-type titanium oxide and fluorine, wherein a content of the fluorine is 2.5 wt % to 3.5 wt %, and 90 wt % or more of the fluorine is chemically bonded to the anatase-type titanium oxide.
摘要翻译：提供能够提高分解率的氧化钛光催化剂及其制造方法。本发明的氧化钛光催化剂是至少含有锐钛矿型氧化钛和氟的氧化钛光催化剂，其中氟的含量为2.5重量％〜3.5重量％，氟的90重量％以上为化学键合到锐钛矿型氧化钛。

9. 发明申请

US20080057324A1 EPITAXIAL WAFER AND METHOD OF PRODUCING SAME 有权
标题翻译：外源波浪及其生产方法
公开(公告)号：US20080057324A1
公开(公告)日：2008-03-06
申请号：US11850599
申请日：2007-09-05
申请人： Shinji Nakahara , Masato Sakai , Takayuki Dohi
发明人： Shinji Nakahara , Masato Sakai , Takayuki Dohi
IPC分类号： B32B9/04 , C30B29/10
CPC分类号： C30B25/20 , C30B23/02 , C30B25/02 , C30B29/06 , C30B33/005 , H01L21/02024 , H01L21/76814
摘要： A method of producing an epitaxial wafer, comprising: performing epitaxial growth of silicon on a main surface of a wafer made of a silicon single crystal; performing surface flattening pretreatment of a main surface of the wafer using a treatment liquid of a predetermined composition at a temperature of 100° C. or less, thereby forming an oxide film of a predetermined thickness while removing particles adhered on the main surface of the wafer; and performing a surface polishing step where the main surface of the wafer is mirror polished.
摘要翻译：一种制造外延晶片的方法，包括：在由硅单晶构成的晶片的主表面上进行硅的外延生长; 使用预定组成的处理液在100℃以下的温度下对晶片的主表面进行表面平整预处理，从而形成预定厚度的氧化膜，同时除去附着在晶片主表面上的颗粒 ; 并进行表面抛光步骤，其中晶片的主表面被镜面抛光。

10. 发明授权

US06262393B1 Epitaxial growth furnace 失效
标题翻译：外延生长炉
公开(公告)号：US06262393B1
公开(公告)日：2001-07-17
申请号：US09554231
申请日：2000-10-16
申请人： Masato Imai , Masanori Mayusumi , Shinji Nakahara , Kazutoshi Inoue
发明人： Masato Imai , Masanori Mayusumi , Shinji Nakahara , Kazutoshi Inoue
IPC分类号： F27B514
CPC分类号： C30B25/08 , C23C16/458 , C23C16/481
摘要： An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.
摘要翻译：一种外延生长炉，包括布置在反应室内的第一和第二分隔壁，由分隔壁和反应室的内壁表面围绕的第一分离空间，由分隔壁隔开的第二分离空间，反应室的内壁表面，保持机构，其适于将一对半导体晶片分别保持在第一和第二分隔壁上，使得该对晶片的主表面彼此间隔开，并且还暴露于第二分离空间和用于分别向两个晶片的背面照射辐射热的一对加热器。

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