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1. 发明授权

US5327395A Page-mode type memory writing control circuit using end-of-page address 失效
标题翻译：页面模式型存储器写入控制电路使用页面地址
公开(公告)号：US5327395A
公开(公告)日：1994-07-05
申请号：US957000
申请日：1992-10-06
申请人： Yoshihisa Sugiura , Yoshihisa Iwata , Masaki Momodomi , Yasuo Itoh , Tomoharu Tanaka , Yoshiyuki Tanaka
发明人： Yoshihisa Sugiura , Yoshihisa Iwata , Masaki Momodomi , Yasuo Itoh , Tomoharu Tanaka , Yoshiyuki Tanaka
IPC分类号： G11C17/00 , G11C16/02 , G11C16/08 , G11C16/10 , G11C8/00
CPC分类号： G11C16/08 , G11C16/10 , G11C2216/14
摘要： A NOR operation is performed on the address bit by bit by a NOR circuit, and when the final address in a page is detected from the result of the NOR operation by a final address detection circuit, a program starting circuit executes data writing to a memory cell. This can ensure detection of the final address in a page without using a counter circuit. It is therefore possible to simplify the structure of the final address detection circuit and reduce the circuit area occupying in a semiconductor memory device.
摘要翻译：通过NOR电路对地址逐位执行NOR运算，并且当由最终地址检测电路从NOR运算的结果检测到页面中的最终地址时，程序启动电路执行向存储器的数据写入细胞。这可以确保在不使用计数器电路的情况下检测页面中的最终地址。因此，可以简化最终地址检测电路的结构并减少半导体存储器件占用的电路面积。

2. 发明申请

US20060114729A1 Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US20060114729A1
公开(公告)日：2006-06-01
申请号：US11243985
申请日：2005-10-06
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G11C7/10 , G11C11/34
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

3. 发明授权

US06967892B2 Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US06967892B2
公开(公告)日：2005-11-22
申请号：US10804094
申请日：2004-03-19
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C16/04
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写过程中，通过改变数据寄存器中的数据，对数据一次正确写入的存储单元不会影响重写操作。

4. 发明授权

US5909399A Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US5909399A
公开(公告)日：1999-06-01
申请号：US100330
申请日：1998-06-19
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写过程中，通过改变数据寄存器中的数据，对数据一次正确写入的存储单元不会影响重写操作。

5. 发明授权

US5793696A Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US5793696A
公开(公告)日：1998-08-11
申请号：US826820
申请日：1997-04-08
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

6. 发明授权

US5615165A Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US5615165A
公开(公告)日：1997-03-25
申请号：US576564
申请日：1995-12-21
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写操作中，通过改变数据寄存器中的数据，对具有一次适当写入的数据的存储单元不进行重写操作。

7. 发明授权

US5268867A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5268867A
公开(公告)日：1993-12-07
申请号：US957001
申请日：1992-10-06
申请人： Masaki Momodomi , Yasuo Itoh , Yoshihisa Iwata , Tomoharu Tanaka , Yoshiyuki Tanaka
发明人： Masaki Momodomi , Yasuo Itoh , Yoshihisa Iwata , Tomoharu Tanaka , Yoshiyuki Tanaka
IPC分类号： G11C11/409 , G11C5/14 , G11C7/10 , G11C16/06 , G11C16/20 , G11C16/26 , G11C7/00
CPC分类号： G11C7/1048 , G11C16/20 , G11C16/26 , G11C5/147
摘要： The present invention provides a semiconductor memory device capable of reducing its current consumption, controlling the generation of noise, and increasing in access using a precharge voltage applied to a precharge circuit. In the semiconductor memory device, a precharge circuit is connected to a pair of data input/output lines, and includes a MOS transistor connected between one of the data input/output lines and a node of a precharge voltage and a MOS transistor connected between the other data input/output line and a node of the precharge voltage. The gates of the MOS transistors are supplied with control signals so that the MOS transistors are turned on when the data input/output lines are precharged. A MOS transistor is connected to the data input/output lines for equalizing them. The precharge voltage is set to half of a value obtained by subtracting the threshold voltage of the MOS transistor from the power supply voltage.
摘要翻译：本发明提供一种半导体存储器件，其能够降低其电流消耗，控制噪声的产生，并且使用施加到预充电电路的预充电电压来增加存取。在半导体存储器件中，预充电电路连接到一对数据输入/输出线，并且包括连接在数据输入/输出线之一和预充电电压的节点之间的MOS晶体管和连接在其他数据输入/输出线和预充电电压的节点。 MOS晶体管的栅极被提供控制信号，使得当数据输入/输出线被预充电时MOS晶体管导通。 MOS晶体管连接到数据输入/输出线，以使它们均衡。预充电电压被设定为通过从电源电压减去MOS晶体管的阈值电压而获得的值的一半。

8. 发明授权

US5818791A Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US5818791A
公开(公告)日：1998-10-06
申请号：US826152
申请日：1997-03-27
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

9. 发明授权

US5724300A Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US5724300A
公开(公告)日：1998-03-03
申请号：US784927
申请日：1997-01-16
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

10. 发明授权

US07139201B2 Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US07139201B2
公开(公告)日：2006-11-21
申请号：US11243985
申请日：2005-10-06
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G11C11/34
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写操作中，通过改变数据寄存器中的数据，对具有一次适当写入的数据的存储单元不进行重写操作。

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