会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • Power semiconductor device
    • 功率半导体器件
    • US20060151805A1
    • 2006-07-13
    • US11194593
    • 2005-08-02
    • Kenji OotaYoshihiro YamaguchiHiroshi Yamaguchi
    • Kenji OotaYoshihiro YamaguchiHiroshi Yamaguchi
    • H01L29/45H01L29/76
    • H01L29/0661H01L29/0619H01L29/0834H01L29/74
    • A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconductor substrate has a side surface portion having a vertical portion formed substantially vertical to a main surface and a mesa portion connected to the vertical portion in a cross section. The gate electrode region is formed in a first main surface of the semiconductor substrate. The cathode electrode region is formed in part of a surface of the gate electrode region. The anode electrode region is formed in a second main surface of the semiconductor substrate. The guard ring is formed in the second main surface of the semiconductor substrate and annularly surrounds the anode electrode region. With this constitution provided is a power semiconductor device which makes the impurity diffusion length of the anode electrode region shallower in order to ensure reduction in recovery loss.
    • 功率半导体器件包括半导体衬底,栅电极区域(控制电极区域),阴极电极区域(第一主电极区域),阳极电极区域(第二主电极区域)和保护环。 半导体衬底具有侧表面部分,该侧表面部分具有基本上垂直于主表面的垂直部分和在横截面中连接到垂直部分的台面部分。 栅电极区域形成在半导体衬底的第一主表面中。 阴极电极区域形成在栅电极区域的一部分表面。 阳极电极区域形成在半导体衬底的第二主表面中。 保护环形成在半导体衬底的第二主表面中并且环形地围绕阳极电极区域。 通过这样构成,为了确保降低回收损失,能够使阳极电极区域的杂质扩散长度变浅的功率半导体装置。
    • 3. 发明授权
    • Power semiconductor device
    • 功率半导体器件
    • US07244969B2
    • 2007-07-17
    • US11194593
    • 2005-08-02
    • Kenji OotaYoshihiro YamaguchiHiroshi Yamaguchi
    • Kenji OotaYoshihiro YamaguchiHiroshi Yamaguchi
    • H01L29/74H01L31/111
    • H01L29/0661H01L29/0619H01L29/0834H01L29/74
    • A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconductor substrate has a side surface portion having a vertical portion formed substantially vertical to a main surface and a mesa portion connected to the vertical portion in a cross section. The gate electrode region is formed in a first main surface of the semiconductor substrate. The cathode electrode region is formed in part of a surface of the gate electrode region. The anode electrode region is formed in a second main surface of the semiconductor substrate. The guard ring is formed in the second main surface of the semiconductor substrate and annularly surrounds the anode electrode region. With this constitution provided is a power semiconductor device which makes the impurity diffusion length of the anode electrode region shallower in order to ensure reduction in recovery loss.
    • 功率半导体器件包括半导体衬底,栅电极区域(控制电极区域),阴极电极区域(第一主电极区域),阳极电极区域(第二主电极区域)和保护环。 半导体衬底具有侧表面部分,该侧表面部分具有基本上垂直于主表面的垂直部分和在横截面中连接到垂直部分的台面部分。 栅电极区域形成在半导体衬底的第一主表面中。 阴极电极区域形成在栅电极区域的一部分表面。 阳极电极区域形成在半导体衬底的第二主表面中。 保护环形成在半导体衬底的第二主表面中并且环形地围绕阳极电极区域。 通过这样构成,为了确保降低回收损失,能够使阳极电极区域的杂质扩散长度变浅的功率半导体装置。
    • 6. 发明授权
    • Thermal cutting machine and thermal cutting method
    • 热切割机和热切割方法
    • US08729421B2
    • 2014-05-20
    • US11629283
    • 2005-06-02
    • Satoshi OhnishiYoshihiro Yamaguchi
    • Satoshi OhnishiYoshihiro Yamaguchi
    • B23K9/02
    • B23K37/0408B23K7/002B23K10/00B23K26/0884B23K26/16B23K26/38B23K26/702B23K37/0461B23K2101/18
    • A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.
    • 具有用于放置板14的大量支撑器的格子托盘13被安装到桌子12上,以便可自由地装配和拆卸。 通过用起重机提升格子托盘13的方法来进行板14的进入,该起重机已将板14已经装载在不同位置的格子托盘13上,将它们运送到工作台12上,并将它们下降到 桌子12.切割完成之后,格子托盘12被升起并与工作台12分离,制成品并将剩下的材料运送到其上并被带走到不同的位置,另一个格子托盘13具有 安装在其上的另一个板14与起重机一起被放置在工作台12上,并且开始切割另一个板14的任务。
    • 8. 发明授权
    • Dye-sensitized solar cell
    • 染料敏化太阳能电池
    • US08530738B2
    • 2013-09-10
    • US13254920
    • 2010-03-04
    • Shuzi HayaseYoshihiro Yamaguchi
    • Shuzi HayaseYoshihiro Yamaguchi
    • H01L31/0248H01L31/0216
    • H01G9/2072H01G9/2031H01G9/2059H01L51/0064H01M14/005Y02E10/542Y02P70/521
    • There is provided a tandem-type dye-sensitized solar cell having a novel structure whereby optical absorption efficiency is improved and which can be manufactured at low cost.A dye-sensitized solar cell 10 comprises an anode substrate 12, a first dye-carrying porous oxide semiconductor layer 14, an electrolytic solution layer 16a, a porous support layer 18, a second dye-carrying porous oxide semiconductor layer 20, an electrolytic solution layer 16b, and a cathode substrate 22, arranged in order from an optical incidence side. The porous support layer 18 supports an iodine redox catalyst layer 19. Electrons derived by a conductor from a conductor layer 12b are introduced to the cathode substrate 22, thereby configuring, for example, a battery circuit for lighting purposes.
    • 提供了具有新型结构的串联型染料敏化太阳能电池,由此光学吸收效率提高并且可以以低成本制造。 染料敏化太阳能电池10包括阳极基底12,第一染料负载多孔氧化物半导体层14,电解液层16a,多孔载体层18,第二染料负载多孔氧化物半导体层20,电解溶液 层16b和阴极基板22,从光入射侧依次配置。 多孔支撑层18支撑碘氧化还原催化剂层19.由导体层12b导体产生的电子引入阴极基板22,从而构成例如用于照明目的的电池电路。