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    • 3. 发明授权
    • Method for repairing photomask by removing residual defect in said
photomask
    • 通过去除所述光掩模中的残留缺陷来修复光掩模的方法
    • US5965301A
    • 1999-10-12
    • US976453
    • 1997-11-25
    • Masami NaraToshifumi YokoyamaTsukasa Abe
    • Masami NaraToshifumi YokoyamaTsukasa Abe
    • G03F1/00G03F1/30G03F1/32H01L21/302H01L21/306H01L21/3065G03F9/00
    • G03F1/74
    • A method for repairing a photomask by removing a residual defect in the photomask is provided which can solve problems, involved in repair of the photomask by the conventional laser beam irradiation, such as various types of maladjustments, limitation of focusing of a laser beam, creation of roughening in the repaired area, and problems, involved in repair of the photomask by focused ion beam irradiation, such as damage to a transparent substrate and a gallium stain. The method comprises the steps of: (a) applying actinic radiation to the residual defect area to remove the residual defect except for a defect edge region having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area; and (b) removing the defect edge region, remaining unremoved by the physical means, having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area by chemical etching with a chemical, the predetermined width being such that the influence of the actinic radiation does not extend over the outside of the residual defect area and, at the same time, the etching time can be set so that the region having a predetermined width from the periphery is removed by the chemical etching without any substantial influence on other layers including a light-shielding layer.
    • 提供了通过去除光掩模中的残余缺陷来修复光掩模的方法,其可以解决通过常规激光束照射来修复光掩模的问题,诸如各种不正确的调整,激光束的聚焦限制,创建 在修复区域中的粗糙化,以及涉及通过聚焦离子束照射修复光掩模的问题,例如对透明基板的损坏和镓污染。 该方法包括以下步骤:(a)将光化辐射施加到残余缺陷区域,以除去残留缺陷区域的整个周边之外的残留缺陷区域周围具有预定宽度的缺陷边缘区域的残余缺陷 ; 和(b)通过化学蚀刻从残余缺陷区域的整个周边除去具有预定宽度的残留缺陷区域的预定宽度的物理装置保留的缺陷边缘区域,预定宽度为 光化辐射的影响不会延伸到残余缺陷区域的外部,并且同时可以设定蚀刻时间,使得通过化学蚀刻除去具有来自周边的预定宽度的区域,而没有任何 对包括遮光层的其它层的显着影响。
    • 6. 发明申请
    • Device and method for inspecting wavelength-variable semiconductor laser, and method for inspecting coherent source
    • 用于检测波长可变半导体激光器的装置和方法以及检查相干光源的方法
    • US20050276288A1
    • 2005-12-15
    • US11197624
    • 2005-08-04
    • Yasuo KitaokaToshifumi YokoyamaKazuhisa Yamamoto
    • Yasuo KitaokaToshifumi YokoyamaKazuhisa Yamamoto
    • G01J1/42H01S3/10H01S5/00H01S5/06H01S5/0625
    • G01J1/4257H01S5/0014H01S5/005H01S5/0092H01S5/06256
    • A method for easily and quickly evaluating the wavelength variability properties of a wavelength-variable semiconductor laser is provided. An inspection device includes a power source for supplying current to a wavelength-variable DBR semiconductor laser having an active region, a phase control region, and a DBR region, a photo-detector for detecting an output intensity of laser beam emitted from the wavelength-variable DBR semiconductor laser, and a transmission type wavelength-selection element that can be inserted into a light path from the wavelength-variable DBR semiconductor laser to the photo-detector. In a state where the transmission type wavelength-selection element is inserted into the light path from the wavelength-variable DBR semiconductor laser to the photo-detector, at least one of a phase current that is supplied to the phase control region and a DBR current that is supplied to the DBR region is changed with respect to a predetermined active current that is supplied to the active region, and the output intensity of the laser beam after the laser beam has passed through the transmission type wavelength-selection element is detected by the photo-detector.
    • 提供了一种容易且快速地评估波长可变半导体激光器的波长变异性的方法。 检查装置包括用于向具有有源区域的波长可变DBR半导体激光器提供电流的电源,相位控制区域和DBR区域,用于检测从波长范围发射的激光束的输出强度的光电检测器, 可变DBR半导体激光器和可以插入到从波长可变DBR半导体激光器到光检测器的光路中的透射型波长选择元件。 在透射型波长选择元件从波长可变DBR半导体激光器插入到光检测器的光路中的状态下,提供给相位控制区域的相电流和DBR电流中的至少一个 提供给DBR区域的电压相对于提供给有源区域的预定有功电流而改变,并且激光束已经通过透射型波长选择元件之后的激光束的输出强度由 光电探测器。
    • 9. 发明授权
    • Phase shift mask and method of producing the same
    • 相移掩模及其制造方法
    • US5972543A
    • 1999-10-26
    • US100083
    • 1998-06-19
    • Toshifumi YokoyamaKoichi MikamiChiaki HatsudaHiroshi Mohri
    • Toshifumi YokoyamaKoichi MikamiChiaki HatsudaHiroshi Mohri
    • H01L21/027G03F1/32G03F9/00
    • G03F1/32
    • A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc., or a method wherein after a region in which the composition is not desired to change has been masked, the whole blank is exposed to an active atmosphere, thereby reducing the transmittance for exposure light at the region (107).
    • 相移掩模,例如 半色调相移掩模,其不需要形成超细图案,并且能够在曝光期间抑制对图像形成产生不利影响的光强度的次峰值的出现, 在对应于通过使用掩模进行的转印期间经受多次曝光的区域的器件图案区域外的区域处的透射率降低的阻挡图案。 半色调相移掩模在透明基板(101)上具有包括单层或多层的半色调相移膜(102)。 通过照射区域(107)的方法,半透明相移膜(102)的组成在与多曝光区域对应的透明基板(101)的装置图案区域外的区域(107)中变化 具有电磁波,粒子束,热射线等,或者其中在组合物不希望改变的区域已被掩蔽之后,整个坯料暴露于活性气氛,从而降低透射率 在区域(107)处的曝光光。