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1. 发明授权

US08741803B2 Pesticidal composition and method for controlling pest 有权
标题翻译：杀虫剂组成及防治害虫的方法
公开(公告)号：US08741803B2
公开(公告)日：2014-06-03
申请号：US12673268
申请日：2008-07-31
申请人： Yoshihiro Ito , Yuki Nakano
发明人： Yoshihiro Ito , Yuki Nakano
IPC分类号： A01N43/40 , A01N43/653 , A01P7/00 , A01P7/02 , A01P7/04
CPC分类号： A01N41/02 , A01N31/14 , A01N41/10 , A01N43/50 , A01N43/653 , A01N37/22 , A01N37/28 , A01N37/42 , A01N43/16 , A01N43/40 , A01N43/54 , A01N43/56 , A01N47/24 , A01N47/38 , A01N53/00 , A01N57/28 , A01N2300/00
摘要： To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant. A pesticidal composition comprising the following (component A) and the following (component B) as active ingredients:(component A): one or more compounds selected from 3-arylphenyl sulfide derivatives represented by the formula [I]:(component A): wherein R is a C2-C6 alkyl group which may be substituted, or the like, each of B0, B1, B2 and B3 which are independent of one another, is a hydrogen atom, a halogen atom or a haloalkyl group, n is an integer of from 0 to 2, and Ar is a phenyl group, a pyrazolyl group or a triazolyl group, (component B): one or more compounds selected from the group consisting of triazamate, butocarboxim, butoxycarboxim, chromafenozide, halofenozide, cyflumetofen, prallethrin, acetoprole, ethiprole, methamidophos, flonicamid, pyridalyl, flufenerim, flubendiamide, tebufenozide, fenazaquin and cyenopyrafen.
摘要翻译：提供控制不利于培育有用作物植物或有用植物的害虫的杀虫组合物。作为活性成分的（A）成分和下述（B成分）的农药组合物：（A成分）：式（I）表示的一种以上选自3-芳基苯基硫醚衍生物的化合物：（A成分）：其中R是可以被取代的C 2 -C 6烷基等，其彼此独立的B 0，B 1，B 2和B 3各自是氢原子，卤素原子或卤代烷基，n是 0至2的整数，Ar为苯基，吡唑基或三唑基（组分B）：一种或多种选自三唑烷基，咔唑基偶氮，丁氧基卡马西亚，二铬酰肼，卤苯酰肼，氰氟虫酯，丙烯菊酯，acetoprole，乙虫腈，甲胺磷，氟虫酰胺，吡啶甲酰，flufenerim，flubendiamide，tebufenozide，fenazaquin和cyenopyrafen。

2. 发明申请

US20110067612A1 PESTICIDAL COMPOSITION AND METHOD FOR CONTROLLING PEST 有权
标题翻译：杀虫剂组合物及其控制方法
公开(公告)号：US20110067612A1
公开(公告)日：2011-03-24
申请号：US12673268
申请日：2008-07-31
申请人： Yoshihiro Ito , Yuki Nakano
发明人： Yoshihiro Ito , Yuki Nakano
IPC分类号： A01G13/00 , A01N43/707 , A01N43/40 , A01N57/12 , A01N25/00 , A01P7/00
CPC分类号： A01N41/02 , A01N31/14 , A01N41/10 , A01N43/50 , A01N43/653 , A01N37/22 , A01N37/28 , A01N37/42 , A01N43/16 , A01N43/40 , A01N43/54 , A01N43/56 , A01N47/24 , A01N47/38 , A01N53/00 , A01N57/28 , A01N2300/00
摘要： To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant.A pesticidal composition comprising the following (component A) and the following (component B) as active ingredients: (component A): one or more compounds selected from 3-arylphenyl sulfide derivatives represented by the formula [I]: (component A): wherein R is a C2-C6 alkyl group which may be substituted, or the like, each of B0, B1, B2 and B3 which are independent of one another, is a hydrogen atom, a halogen atom or a haloalkyl group, n is an integer of from 0 to 2, and Ar is a phenyl group, a pyrazolyl group or a triazolyl group, (component B): one or more compounds selected from the group consisting of triazamate, butocarboxim, butoxycarboxim, chromafenozide, halofenozide, cyflumetofen, prallethrin, acetoprole, ethiprole, methamidophos, flonicamid, pyridalyl, flufenerim, flubendiamide, tebufenozide, fenazaquin and cyenopyrafen.
摘要翻译：提供控制不利于培育有用作物植物或有用植物的害虫的杀虫组合物。作为活性成分的（A）成分和下述（B成分）的农药组合物：（A成分）：式（I）表示的一种以上选自3-芳基苯基硫醚衍生物的化合物：（A成分）：其中R是可以被取代的C 2 -C 6烷基等，其彼此独立的B 0，B 1，B 2和B 3各自是氢原子，卤素原子或卤代烷基，n是 0至2的整数，Ar为苯基，吡唑基或三唑基（组分B）：一种或多种选自三唑烷基，咔唑基偶氮，丁氧基卡马西亚，二铬酰肼，卤苯酰肼，氰氟虫酯，丙烯菊酯，acetoprole，乙虫腈，甲胺磷，氟虫酰胺，吡啶甲酰，flufenerim，flubendiamide，tebufenozide，fenazaquin和cyenopyrafen。

3. 发明授权

US08802713B2 3-alkoxy-1-phenylpyrazole derivatives and pesticides 有权
标题翻译： 3-烷氧基-1-苯基吡唑衍生物和农药
公开(公告)号：US08802713B2
公开(公告)日：2014-08-12
申请号：US12682059
申请日：2008-10-17
申请人： Satoru Ohata , Katsuya Kato , Keiji Toriyabe , Yoshihiro Ito , Ryuji Hamaguchi , Yuki Nakano
发明人： Satoru Ohata , Katsuya Kato , Keiji Toriyabe , Yoshihiro Ito , Ryuji Hamaguchi , Yuki Nakano
IPC分类号： A61K31/415 , C07D231/10 , C07D231/22 , A01N43/56 , C07D231/52
CPC分类号： A01N43/56 , C07D231/22 , C07D231/52
摘要： To provide pesticides such as insecticides, miticides and nematicides, which are excellent in the safety, pesticidal effects, residual effectiveness, etc., which further have infiltration, and which can be applied by soil treatment.A pesticide comprising a 3-alkoxy-1-phenyl-pyrazole derivative represented by the formula [I] or an agriculturally acceptable salt thereof as an active ingredient: wherein, for example, R1 is a C1-C10 alkyl group or the like, R2 is a hydrogen atom or the like, R3 is a hydrogen atom or the like, and each of R4, R5, R6 and R8 which are independent of one another, is a hydrogen atom or the like, and R7 is a C2-C4 haloalkylthio group or the like.
摘要翻译：提供进一步具有渗透性且可通过土壤处理施用的安全性，杀虫效果，残留效果等优异的杀虫剂，杀螨剂，杀线虫剂等杀虫剂。一种农药，其包含式[I]表示的3-烷氧基-1-苯基 - 吡唑衍生物或其农业上可接受的盐作为活性成分：其中，例如，R1为C1-C10烷基等，R2 是氢原子等，R 3为氢原子等，R 4，R 5，R 6和R 8各自独立地为氢原子等，R 7为C 2〜C 4卤代烷硫基组等。

4. 发明申请

US20100210704A1 3-ALKOXY-1-PHENYLPYRAZOLE DERIVATIVES AND PESTICIDES 有权
标题翻译： 3-烷基-1-苯基吡唑衍生物和杀虫剂
公开(公告)号：US20100210704A1
公开(公告)日：2010-08-19
申请号：US12682059
申请日：2008-10-17
申请人： Satoru Ohata , Katsuya Kato , Keiji Toriyabe , Yoshihiro Ito , Ryuji Hamaguchi , Yuki Nakano
发明人： Satoru Ohata , Katsuya Kato , Keiji Toriyabe , Yoshihiro Ito , Ryuji Hamaguchi , Yuki Nakano
IPC分类号： A01N43/56 , C07D231/52 , C07D231/22 , C07D231/34 , A01P7/00
CPC分类号： A01N43/56 , C07D231/22 , C07D231/52
摘要： To provide pesticides such as insecticides, miticides and nematicides, which are excellent in the safety, pesticidal effects, residual effectiveness, etc., which further have infiltration, and which can be applied by soil treatment.A pesticide comprising a 3-alkoxy-1-phenyl-pyrazole derivative represented by the formula [I] or an agriculturally acceptable salt thereof as an active ingredient: wherein, for example, R1 is a C1-C10 alkyl group or the like, R2 is a hydrogen atom or the like, R3 is a hydrogen atom or the like, and each of R4, R5, R6 and R8 which are independent of one another, is a hydrogen atom or the like, and R7 is a C2-C4 haloalkylthio group or the like.
摘要翻译：提供进一步具有渗透性且可通过土壤处理施用的安全性，杀虫效果，残留效果等优异的杀虫剂，杀螨剂，杀线虫剂等杀虫剂。一种农药，其包含式[I]表示的3-烷氧基-1-苯基 - 吡唑衍生物或其农业上可接受的盐作为活性成分：其中，例如，R1为C1-C10烷基等，R2 是氢原子等，R 3为氢原子等，R 4，R 5，R 6和R 8各自独立地为氢原子等，R 7为C 2〜C 4卤代烷硫基组等。

5. 发明授权

US09978952B2 Fused heterocyclic aromatic derivative, organic electroluminescence element material, and organic electroluminescence element using same 有权
公开(公告)号：US09978952B2
公开(公告)日：2018-05-22
申请号：US14234533
申请日：2012-09-11
申请人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
发明人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
IPC分类号： H01L51/50 , H01L51/00 , C07D333/76 , C07D519/00 , C07D307/91 , C09K11/06 , H05B33/10 , C09B57/00 , C09B69/00
CPC分类号： H01L51/0067 , C07D307/91 , C07D333/76 , C07D519/00 , C09B57/00 , C09B69/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0073 , H01L51/0074 , H01L51/0085 , H01L51/5016 , H05B33/10
摘要： A compound represented by the following formula (1). In the formula, A1 is O, S, Si(Ar1)(Ar2), P(═O)(Ar3)(Ar4), a substituted or unsubstituted arylene group including 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group including 5 to 30 ring atoms.

6. 发明授权

US09764241B2 Game system utilizing network 有权
公开(公告)号：US09764241B2
公开(公告)日：2017-09-19
申请号：US14234894
申请日：2012-08-01
申请人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
发明人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
IPC分类号： A63F13/79 , A63F13/795 , A63F13/30
CPC分类号： A63F13/795 , A63F13/12 , A63F13/30 , A63F13/79 , A63F2300/5566 , A63F2300/6054 , A63F2300/8047
摘要： This game system (1) includes multiple game machines (2A, 2B) connected to a network (5), allows a player of a game machine to select one of selective items on a game prepared in advance, and allows the player to play a game having content reflecting the selected item. This game system is provided with a device (32) for storing relation data for determining whether or not a predetermined connection exists between players, a device (11) for determining the selection state pertaining to the items selected by the players on the game machines, a device (11, 12) for determining, based on the relation data, other players that have the predetermined connection with the player, and a device (21) which, when the player is making the selection from the selective items, presents the player making the selection with the selection state of other players having the predetermined connection with that player.

7. 发明授权

US09537111B2 Compound, material for organic electroluminescence device, and organic electroluminescence device 有权
标题翻译：有机电致发光元件用复合物，有机电致发光元件
公开(公告)号：US09537111B2
公开(公告)日：2017-01-03
申请号：US14116896
申请日：2012-05-09
申请人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
发明人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
IPC分类号： H01L51/50 , H01L51/00 , C09K11/06 , H05B33/14 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C07D209/86 , C07D307/91
CPC分类号： H01L51/50 , C07D209/86 , C07D307/91 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C09K11/06 , C09K2211/1007 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/5016 , H01L51/5056 , H01L51/5088 , H01L51/5096 , H05B33/14
摘要： A specific material for organic electroluminescence device having m-phenylene skeleton in its molecule realizes a highly heat-resistant and long lifetime organic electroluminescence device capable of driving at low voltage with high efficiency.
摘要翻译：在其分子中具有间亚苯基骨架的有机电致发光元件的具体材料实现了能够以低效率高效率驱动的高耐热且长寿命的有机电致发光器件。

8. 发明授权

US09219127B2 SiC field effect transistor 有权
标题翻译： SiC场效应晶体管
公开(公告)号：US09219127B2
公开(公告)日：2015-12-22
申请号：US13518650
申请日：2010-12-24
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/66 , H01L29/165 , H01L29/417 , H01L29/16 , H01L29/43 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/165 , H01L29/41741 , H01L29/41766 , H01L29/43 , H01L29/47 , H01L29/66068 , H01L29/7803 , H01L29/7806 , H01L29/8618 , H01L29/872
摘要： A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
摘要翻译： SiC场效应晶体管包括：SiC半导体层; 以及包括半导体层中的第一导电型源极区域的MIS晶体管结构，与源极区域接触的半导体层中的第二导电类型体区域，与体区域接触的半导体层中的第一导电型漂移区域与所述体区相对的栅极电极，其具有插入在所述电极和所述体区之间的栅极绝缘膜，用于在所述体区中形成沟道，以使所述电流在所述漂移区域和所述源极区域之间流动，以及阻挡层形成层与漂移区接触以通过与漂移区的接触而形成结屏障，所述结屏障低于由身体区域和漂移区域之间的结点限定的体二极管的扩散电位。

9. 发明授权

US09184286B2 Semiconductor device having a breakdown voltage holding region 有权
标题翻译：具有击穿电压保持区域的半导体器件
公开(公告)号：US09184286B2
公开(公告)日：2015-11-10
申请号：US13983157
申请日：2012-02-01
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/66 , H01L29/78 , H01L21/82 , H01L29/417 , H01L29/06 , H01L29/10 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/20
CPC分类号： H01L29/7813 , H01L21/8213 , H01L27/088 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/086 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7827 , H01L2224/0603
摘要： A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.
摘要翻译：本发明的半导体器件是具有包括宽带隙半导体的半导体层的半导体器件，其中半导体层包括：第一导电型源极区，第二导电型沟道区和第一导电类型漏极区域，其从半导体层的表面侧依次形成; 源极沟槽，其从半导体层的表面通过源极区域和沟道区域到达漏极区域; 形成为与沟道区域接触的栅极绝缘膜; 面对沟道区域的栅电极，其间插入有栅极绝缘膜; 以及选择性地形成在源沟槽的侧面或底面上的第二导电类型的第一击穿电压保持区域，并且所述半导体器件包括与源极沟槽中的漏极区域接合的势垒形成层，用于通过与漏极区域的连接形成低于由沟道区域和漏极区域之间的pn结形成的体二极管的扩散电位的结屏障。

10. 发明授权

US09166038B2 Semiconductor device, and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09166038B2
公开(公告)日：2015-10-20
申请号：US13614510
申请日：2012-09-13
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/10 , H01L29/66 , H01L29/06 , H01L29/417
CPC分类号： H01L29/7813 , H01L21/0465 , H01L29/0623 , H01L29/063 , H01L29/1095 , H01L29/1608 , H01L29/36 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7827
摘要： A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).
摘要翻译：半导体器件（A1）包括具有形成在其上的沟槽（3）的第一面和与第一面相反的第二面的半导体层，栅极（41）和栅极绝缘层（5）。半导体层包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13）和n型半导体区域（14）。沟槽（3）形成为穿过p型半导体层（13）并到达第二n型半导体层（12）。 p型半导体层（13）包括延伸到比沟槽（3）更靠近半导体层的第二面的位置的延伸部分。这种结构允许抑制栅绝缘层（5）中的电介质击穿。

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