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1. 发明授权

US4973377A Crystal diameter controlling method 失效
标题翻译：晶体直径控制方法
公开(公告)号：US4973377A
公开(公告)日：1990-11-27
申请号：US174583
申请日：1988-03-28
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki
IPC分类号： C30B15/20 , C30B15/26
CPC分类号： C30B15/26
摘要： Disclosed is a method of controlling the diameter of a single crystal produced by the Czochralski method. The diameter of a tapered portion of the single crystal is controlled by controlling the temperature of a melt in a crucible and the rotational speed of the crucible. The control range of the rotational speed of the crucible is made narrower as the diameter of the tapered portion approaches closer to that of a body portion, and the rotational speed is made constant while the body portion is grown.

2. 发明授权

US4915775A Apparatus for adjusting initial position of melt surface 失效
标题翻译：用于调节熔体表面初始位置的装置
公开(公告)号：US4915775A
公开(公告)日：1990-04-10
申请号：US222438
申请日：1988-07-21
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Munenori Tomita , Atsushi Ozaki
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Munenori Tomita , Atsushi Ozaki
IPC分类号： C30B15/00 , C30B15/20 , C30B15/26
CPC分类号： C30B15/26 , C30B15/20 , Y10T117/1008
摘要： A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.

3. 发明授权

US4794263A Apparatus for measuring crystal diameter 失效
标题翻译：用于测量晶体直径的装置
公开(公告)号：US4794263A
公开(公告)日：1988-12-27
申请号：US109722
申请日：1987-10-19
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
IPC分类号： C30B15/26 , G01B11/08 , H01L21/18
CPC分类号： G01B11/08 , Y10T117/1004 , Y10T117/1012
摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.
摘要翻译：一种用于测量晶体直径的装置，其中光学传感器沿着在结晶棒和熔体之间的界面处形成的发光环的一个点处的感测线扫描; 当光学传感器扫描时，判别对应于最大亮度的像素位置; 在结晶棒的至少一圈上计算像素位置的平均值; 并且根据熔融物的平均值和水平计算结晶棒在与熔体相接合的部分的直径D. 类似地，可以通过获得与最小晶体直径相对应的像素位置而不是获得像素位置的平均值来计算最小晶体直径。

4. 发明授权

US5484326A Semiconductor ingot machining method 失效
标题翻译：半导体锭加工方法
公开(公告)号：US5484326A
公开(公告)日：1996-01-16
申请号：US159501
申请日：1993-11-30
申请人： Yoshihiro Hirano , Atsushi Ozaki
发明人： Yoshihiro Hirano , Atsushi Ozaki
IPC分类号： B24B1/00 , B23D5/00 , B28D1/22 , B28D5/00 , B28D5/02 , C30B33/00 , G01N23/207 , H01L21/304 , B24B7/00
CPC分类号： B24B5/50 , B23D5/00 , C30B33/00
摘要： The cutting process is executed after the grinding process and for one semiconductor ingot, one grinding device and one inner diameter saw slicing machine are used to perform grinding process and cutting process respectively. During the grinding process, the entirety of the cylindrical body portion of the semiconductor ingot is cylindrically ground, a portion of the tail end is cylindrically ground, the orientation flat position is determined and an orientation flat is formed by surface grinding. During the cutting process the tail portion is cut off and a sample for lifetime measurement is taken and a wafer sample is cut off from the end of the cylindrical body portion on the tail side. The semiconductor ingot is reversed in the direction of the axis and the head portion of the semiconductor ingot is cut off and a wafer sample is cut off from the cylindrical body portion on the head side. Wafer samples are cut off from the end of the cylindrical body portion on the head side and from the middle portion of cylindrical body portion to divide the cylindrical body portion into two blocks.
摘要翻译：在研磨过程之后执行切割过程，并且对于一个半导体锭，一个研磨装置和一个内径锯切机分别进行研磨处理和切割处理。在研磨过程中，半导体锭的圆筒体部分的整体是圆柱形的，尾端的一部分是圆柱形的，确定取向平面位置，并通过表面研磨形成取向平面。在切割过程中，尾部被切断，并且进行寿命测量的样品，并且从尾侧的圆柱体部分的端部切下晶片样品。半导体锭在轴线方向上反转，并且半导体锭的头部被切断，并且晶片样品从头侧的圆柱形主体部分切除。将晶片样品从头侧的圆筒体部分的端部和圆筒体部分的中间部分切除，以将圆柱体部分分成两个块。

5. 发明授权

US5370077A Single crystal rod pull-up growing apparatus 失效
标题翻译：单晶棒上拉生长装置
公开(公告)号：US5370077A
公开(公告)日：1994-12-06
申请号：US933375
申请日：1992-08-24
申请人： Yoshihiro Hirano , Atsushi Ozaki , Masahiko Urano
发明人： Yoshihiro Hirano , Atsushi Ozaki , Masahiko Urano
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , Y10T117/1004 , Y10T117/1032
摘要： The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 t.sub.3.
摘要翻译：本发明在控制自动模式下的晶体生长的同时，提供从断电恢复之后对单晶生长的控制。源电压通过无断开电源62提供给控制器70.在电源故障恢复时，控制器以与检测到电源故障时存储的控制输出相同的控制输出继续自动运行模式（84， 85）如果电源故障时间t为t <= = t1（例如1秒），则以与检测到电源故障时存储的控制输出相同的控制输出将控制模式切换到手动控制模式（86,87）如果t1 t3则向上移动坩埚16（90），将生长的晶体与熔体22分离。

6. 发明授权

US5584930A Method for measuring the diameter of a single crystal ingot 失效
标题翻译：测量单晶锭直径的方法
公开(公告)号：US5584930A
公开(公告)日：1996-12-17
申请号：US487507
申请日：1995-06-07
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
IPC分类号： H01L21/66 , C30B15/20 , C30B15/28 , G01B11/10 , G01G9/00
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
摘要： A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.
摘要翻译：一种用于测量在单晶拉制装置中拉起的单晶锭的直径的方法，包括：计算上拉单晶的重量，从计算的拉伸单元计算熔融表面相对于坩埚壁的下降量，生长的单晶的重量，然后响应于熔体表面水平的下降量或者将坩埚升高等于表面下降量的量来校正由光学传感器实际测量的锭直径的值水平。

7. 发明授权

US5405285A Machining error correction apparatus 失效
标题翻译：加工纠错装置
公开(公告)号：US5405285A
公开(公告)日：1995-04-11
申请号：US187769
申请日：1994-01-28
申请人： Yoshihiro Hirano , Atsushi Ozaki
发明人： Yoshihiro Hirano , Atsushi Ozaki
IPC分类号： B23Q15/04 , B24B49/02 , B24B49/03 , C30B33/00 , G05B19/401 , G05B19/418 , H01L21/304 , B24B1/02
CPC分类号： C30B29/06 , B24B49/02 , C30B33/00 , G05B19/401 , G05B19/4189 , Y02P90/10 , Y02P90/28
摘要： The diameter, the orientation flat width/notch depth and the length of the block 10p are measured by the measuring devices 71a, 71b and 71c respectively and then the machining errors .DELTA.Dp, .DELTA.Wp and .DELTA.Lp in the measured values against the set values are calculated at the error calculation unit 833. Then .DELTA.Dp, .DELTA.Wp and .DELTA.Lp are stored in memory at the memory unit 834 in correspondence with the identification codes IDi and IDj of the grinding device 5i (i=1-N) and the cutting device 6j (j=1-M) that performed the machining. Then at the average value calculation unit 835, the average values of .DELTA.Dp and .DELTA.Wp for each of the grinding devices 51-5N and the average value of the .DELTA.Lp for each of the cutting devices 61-6M are calculated. The average values of .DELTA.Dp and .DELTA.Wp are supplied to the corresponding grinding device 5i as the diameter correction value and the width/depth correction value respectively and the average value of .DELTA.Lp is sent to the corresponding cutting device 6j as the length correction value from the transmission unit 836.
摘要翻译：通过测量装置71a，71b和71c测量直径，取向平坦宽度/切口深度和块10p的长度，然后根据设定值测量测量值中的加工误差DELTA Dp，DELTA Wp和DELTA Lp 在误差计算单元833处计算。然后，DELTA Dp，DELTA Wp和DELTA Lp根据研磨装置5i（i = 1-N）的识别码IDi和IDj存储在存储器单元834的存储器中，并且切割装置6j（j = 1-M）进行加工。然后在平均值计算单元835中，计算每个研磨装置51-5N的DELTA Dp和DELTA Wp的平均值以及每个切割装置61-6M的DELTA Lp的平均值。将DELTA Dp和DELTA Wp的平均值作为直径校正值和宽度/深度校正值分别提供给相应的研磨装置5i，并且将DELTA Lp的平均值发送到相应的切割装置6j作为长度校正值从传输单元836。

8. 发明授权

US09314942B2 Ingot cutting apparatus and ingot cutting method 有权
标题翻译：锭切割装置和锭切割方法
公开(公告)号：US09314942B2
公开(公告)日：2016-04-19
申请号：US13121269
申请日：2009-10-08
申请人： Hidehiko Nishino , Yoshihiro Hirano , Shigeharu Tsunoda
发明人： Hidehiko Nishino , Yoshihiro Hirano , Shigeharu Tsunoda
IPC分类号： B28D5/04 , B28D5/00 , B08B3/12 , B08B7/02
CPC分类号： B28D5/0076 , B08B3/123 , B08B7/028 , B28D5/045 , Y10T83/263
摘要： An ingot cutting apparatus having at least one coolant pocket storing the coolant to be supplied to the blade, wherein the blade-abrasive-grain portion is brought into contact with the coolant stored in the at least one coolant pocket by causing the blade-abrasive-grain portion of the blade to travel through a groove portion provided at an upper portion of the at least one coolant pocket while driving to rotate the blade so that the coolant is supplied to the blade.
摘要翻译：一种锭切割装置，具有至少一个储存要供应到叶片的冷却剂的冷却剂袋，其中通过使叶片磨料颗粒部分与刀片磨料颗粒部分相接触而与存储在至少一个冷却剂槽中的冷却剂接触，刀片的颗粒部分通过设置在至少一个冷却剂槽的上部处的槽部分，同时驱动以使叶片旋转，使得冷却剂被供应到叶片。

9. 发明授权

US06570628B1 Display device having two display units 失效
标题翻译：具有两个显示单元的显示装置
公开(公告)号：US06570628B1
公开(公告)日：2003-05-27
申请号：US09657941
申请日：2000-09-08
申请人： Yoshihiro Hirano
发明人： Yoshihiro Hirano
IPC分类号： G02F11335
CPC分类号： B60K35/00 , B60K2350/405
摘要： A display device 1 includes an enclosure 2, a first display unit 3 and a second display unit 6. The enclosure 2 is provided with an opening portion 2a through which the first display unit 3 is loaded/unloaded. The first display unit 3 is movably provided between a loading position where said first display unit is completely loaded in the enclosure and a viewing position where information is visually recognized by a driver. The second unit 6 is pivotally supported at its end potion 6c by a pivotal shaft 7 attached to the enclosure 2. The second display unit 6 includes a display 6a and a frame member 6b. When the first display unit 6 is located at both loading position and the viewing position, an end face 6d of the frame member 6b is opposite to said opening portion 2a of the enclosure.
摘要翻译：显示装置1包括外壳2，第一显示单元3和第二显示单元6.外壳2设置有第一显示单元3通过其加载/卸载的开口部2a。第一显示单元3可移动地设置在所述第一显示单元被完全装载在外壳中的装载位置和驾驶员视觉识别信息的观看位置之间。第二单元6通过附接到外壳2的枢转轴7在其端部6c枢转地支撑。第二显示单元6包括显示器6a和框架构件6b。当第一显示单元6位于加载位置和观看位置两者时，框架构件6b的端面6d与外壳的所述开口部分2a相对。

10. 发明授权

US5702522A Method of operating a growing hall containing puller cells 失效
标题翻译：操作含有拉电池的成长大厅的方法
公开(公告)号：US5702522A
公开(公告)日：1997-12-30
申请号：US706502
申请日：1996-09-05
申请人： Kazuo Sakauchi , Yoshihiro Hirano , Akira Uchikawa
发明人： Kazuo Sakauchi , Yoshihiro Hirano , Akira Uchikawa
IPC分类号： C30B15/00 , F24F3/16 , F24F3/26
CPC分类号： F24F3/161 , C30B15/00 , F24F3/1607 , F24F11/0079 , Y02B30/746 , Y10S117/90 , Y10T117/10 , Y10T117/1004
摘要： A crystal puller cell (18) provides a low particulate environment for an individual crystal puller (28). The airflow within each cell is adjustable so that a particulate level appropriate to the activity within the cell is maintained, thereby avoiding the cost of maintaining an entire growing hall (10) at a constant high level of cleanliness. Each cell includes a multi-level floor (46) that includes an operator floor (48) and a maintenance floor (52). A door (62) at the maintenance floor level opens onto a maintenance aisle used to service the machines. A door (64), at the operator floor level, opens onto a clean aisle for transporting raw material and finished product. The cell walls can include magnetic shielding if a magnetic growing process is used to reduce exposure of operators and other machines to intense magnetic fields.
摘要翻译：晶体拉出单元（18）为单个晶体拉出器（28）提供低的颗粒环境。每个细胞内的气流是可调节的，使得保持适合于细胞内的活性的微粒水平，从而避免维持整个生长大厅（10）处于恒定的高清洁度水平的成本。每个单元包括多层地板（46），其包括操作员楼层（48）和维护楼层（52）。维护楼层的门（62）通向用于维修机器的维护通道。在操作员楼层的门（64）打开一个干净的通道，用于运输原材料和成品。如果使用磁力生长过程来减少操作者和其他机器对强磁场的暴露，则电池壁可以包括磁屏蔽。

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