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1. 发明授权

US5354516A Gas feeder 失效
标题翻译：供气器
公开(公告)号：US5354516A
公开(公告)日：1994-10-11
申请号：US30864
申请日：1993-03-12
申请人： Munenori Tomita
发明人： Munenori Tomita
IPC分类号： B01J4/02 , G05D7/06 , G05D11/13 , B01F3/04
CPC分类号： G05D7/0635 , G05D11/131
摘要： A gas feeder for feeding a gas is disclosed. The gas feeder comprises a bubbler holding a source liquid and passing a carrier gas through the liquid, a first sensor provided upstream of the bubbler, sensing the volumetric flow of the carrier gas and producing a carrier gas flow signal, a second sensor provided downstream of the bubbler, sensing the volumetric flow of the mixture and producing a gas mixture flow signal, a valve provided downstream of the bubbler and controlling the volumetric flow of the mixture, and a computer. The computer computes the concentration of the source gas from the carrier gas flow signal and the gas mixture flow signal and estimates the mass flow of the source gas from a product of the computed concentration of the source gas and the volumetric flow of the carrier gas. The computer controls the valve in response to a difference from a predetermined mass flow and the estimated mass flow of the source gas to fix the mass flow of the source gas fed to a destination to the predetermined mass flow. The gas feeder accurately feedback controls an actual mass flow of the source gas to the fixed value without a substantial delay and is applicable to a chemical vapor deposition of single crystal layer.
摘要翻译：公开了用于供给气体的气体供给器。气体进料器包括保持源液体并使载气通过液体的起泡器，设置在起泡器上游的第一传感器，感测载气的体积流量并产生载气流量信号，第二传感器设置在起泡器，感测混合物的体积流量并产生气体混合物流动信号，设置在起泡器下游并控制混合物的体积流量的阀和计算机。计算机从载气流量信号和气体混合物流量信号计算源气体的浓度，并从源气体的计算浓度和载气体积流量的乘积估计源气体的质量流量。计算机响应于来自预定质量流量的差异和源气体的估计质量流量来控制阀门，以将供给到目的地的源气体的质量流量固定为预定质量流量。气体馈送器精确反馈将源气体的实际质量流量控制到固定值，而不会有相当大的延迟，并且适用于单晶层的化学气相沉积。

2. 发明授权

US5993557A Apparatus for growing single-crystalline semiconductor film 失效
标题翻译：用于生长单晶半导体膜的装置
公开(公告)号：US5993557A
公开(公告)日：1999-11-30
申请号：US153326
申请日：1998-09-15
申请人： Munenori Tomita , Masanori Mayuzumi , Hitoshi Habuka
发明人： Munenori Tomita , Masanori Mayuzumi , Hitoshi Habuka
IPC分类号： C23C16/44 , C23C16/455 , C30B25/12 , C30B25/14 , C23C16/00 , C23C16/54
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/455 , C30B25/12 , C30B25/14
摘要： An apparatus for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction to chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.
摘要翻译：一种用于在旋转衬底的同时基于气相生长在衬底上生长高质量单晶半导体膜并防止由旋转驱动单元产生的微粒子粘附到衬底的主平面上的装置。使用旋转驱动单元7使设置在反应室21内的基板2旋转，将反应气体10供给到基板2的主面侧，在反应中将吹扫气体3a供给到基板的后部空间到腔室21以替代具有载气气氛的空间11a，其中旋转驱动单元7位于净化气体排放部分13中，吹扫气体排放管道12连接到吹扫气体排出部分，并且还包括吹扫气体排气管12连接有气体流量控制器8，并且其下游侧连续地连接有排气泵9。

3. 发明授权

US5849078A Method for growing single-crystalline semiconductor film and apparatus used therefor 失效
标题翻译：用于生长单晶半导体膜的方法和用于其的装置
公开(公告)号：US5849078A
公开(公告)日：1998-12-15
申请号：US806163
申请日：1997-02-25
申请人： Munenori Tomita , Masanori Mayuzumi , Hitoshi Habuka
发明人： Munenori Tomita , Masanori Mayuzumi , Hitoshi Habuka
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/12 , H01L21/205 , C30B35/00
CPC分类号： C23C16/45521 , C30B25/02 , C30B25/12 , Y10S117/914
摘要： A method for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 is connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.
摘要翻译：一种在旋转衬底的同时基于气相生长在衬底上生长高质量单晶半导体膜的方法，并且防止由旋转驱动单元产生的微粒子粘附到衬底的主平面上。使用旋转驱动单元7使设置在反应室21内的基板2旋转，将反应气体10供给到基板2的主面侧，在反应中将吹扫气体3a供给到基板的后部空间腔室21更换具有载气气氛的空间11a，旋转驱动单元7位于净化气体排出部13中，净化气体排出管12与净化气体排出部连接，进一步与净化气体排气管12连接有气体流量控制器8，并且其下游侧连续地连接有排气泵9。

4. 发明授权

US5188501A Wafer transfer system 失效
标题翻译：转移系统
公开(公告)号：US5188501A
公开(公告)日：1993-02-23
申请号：US692289
申请日：1991-04-26
申请人： Munenori Tomita , Junichiro Takei
发明人： Munenori Tomita , Junichiro Takei
IPC分类号： H01L21/205 , H01L21/687
CPC分类号： H01L21/68735 , H01L21/68707 , Y10S414/141
摘要： A wafer transfer system consisting of automatic robot claws and a susceptor having circularly bounded and round-bottomed concavities for receiving wafers, wherein the concavities of the susceptor are each provided with at least three trenches made across the circumference of each concavity and arranged equiangularly about the center of each concavity; that each trench is formed such that when a wafer is set in the concavity that portion of the edge of the wafer which is disposed in the trench defines under itself a space in communication with the rest of the space defined by the trench; and that the automatic claws each have as many nails as the number of the trenches of each concavity and are capable of opening and closing the nails which are designed to engage with the wafer in the concavity by inserting the nail tips into the respective space defined under the edge of the wafer.

5. 发明授权

US4915775A Apparatus for adjusting initial position of melt surface 失效
标题翻译：用于调节熔体表面初始位置的装置
公开(公告)号：US4915775A
公开(公告)日：1990-04-10
申请号：US222438
申请日：1988-07-21
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Munenori Tomita , Atsushi Ozaki
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Munenori Tomita , Atsushi Ozaki
IPC分类号： C30B15/00 , C30B15/20 , C30B15/26
CPC分类号： C30B15/26 , C30B15/20 , Y10T117/1008
摘要： A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.

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