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    • 1. 发明授权
      US06337504B1 Insulated gate transistor with leakage current prevention feature 失效
    • Insulated gate transistor with leakage current prevention feature
    • 具有漏电流防护功能的绝缘栅晶体管
    • US06337504B1
    • 2002-01-08
    • US09031733
    • 1998-02-27
    • Yoshihiko Isobe , Hidetoshi Muramoto , Hisayoshi Ooshima , Masahiro Ogino
    • Yoshihiko Isobe , Hidetoshi Muramoto , Hisayoshi Ooshima , Masahiro Ogino
    • H01L2976
    • H01L29/6659 , H01L21/26586 , H01L21/823814 , H01L21/823835 , H01L21/823864 , H01L29/665 , Y10S257/90
    • An MIS transistor fabricated in a manner that minimizes the occurrence of leak currents and that improves overall transistor performance by minimizing variation in location of the transistor source and drain during fabrication thereof. A gate electrode is first fabricated on a substrate. Next, a thermal oxide layer is formed on a side of the gate electrode. A masking process is then performed with the thermal oxide layer to form a source and a drain. A silicon oxide layer is then deposited over the gate electrode, the source and the drain. An etching process is performed on the silicon oxide to form a side wall oxide film over the thermal oxide layer on the side of the gate electrode and to expose surfaces of the gate electrode, the source and the drain. A metal film is then deposited over the gate electrode, the source and the drain and is heat treated to form a metal silicide film on the exposed surfaces of the gate electrode, the source and the drain. The side wall oxide film functions to disperse the metal silicide film as it is deposited to electrically separate the gate electrode, the source and the drain, thereby preventing a leakage current from occurring.
    • 以最小化泄漏电流的发生的方式制造的MIS晶体管，并且通过使晶体管源极和漏极在其制造期间的位置的变化最小化来改善整体晶体管的性能。 首先在基板上制造栅电极。 接下来，在栅电极的一侧形成热氧化层。 然后用热氧化物层进行掩模处理以形成源极和漏极。 然后在栅电极，源极和漏极上沉积氧化硅层。 对氧化硅进行蚀刻处理，以在栅电极侧的热氧化层上形成侧壁氧化膜，并露出栅电极，源极和漏极的表面。 然后在栅电极，源极和漏极上沉积金属膜，并且在栅电极，源极和漏极的暴露表面上进行热处理以形成金属硅化物膜。 侧壁氧化膜用于在金属硅化物膜沉积时分散栅极电极，源极和漏极，从而防止发生漏电流。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US06908857B2 Method of manufacturing semiconductor device 失效
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US06908857B2
    • 2005-06-21
    • US10657081
    • 2003-09-09
    • Kazuo Akamatsu , Yoshihiko Isobe , Hiroyuki Yamane
    • Kazuo Akamatsu , Yoshihiko Isobe , Hiroyuki Yamane
    • H01L23/52 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L21/44 , H01L21/4763
    • H01L21/7685 , H01L21/28518 , H01L21/2855 , H01L21/32051 , H01L21/76886 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L2924/0002 , H01L2924/00
    • A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cm2 or less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.
    • 公开了一种制造半导体器件的方法，该半导体器件具有硅衬底半导体元件和与其电连接的铝（Al）合金布线引线。 该方法包括以下步骤：在硅衬底上形成含有铜（Cu）的Al合金层，并且通过使用溅射技术在Al合金层上形成具有增强的化学反应性的氮化钛（TiN）膜，同时施加直流电力 为5.5W / cm 2以下。 在Al合金层上制备这种富含反应性的TiN膜导致Al和Ti的反应层被细分成几个间隔开的段。 在这种情况下，反应层几乎不作为任何扩散路径; 因此，可以防止Al合金层中所含的Cu作为其扩散路径而反向扩散。 这使得可以抑制或最小化在含铝的引线图案的表面上或上方的AlN的不希望的制造，从而能够增加使用的电互连引线的电迁移（EM）寿命。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 6. 发明授权
      US06423440B1 Closed battery and closing member 失效
    • Closed battery and closing member
    • 闭合电池和关闭件
    • US06423440B1
    • 2002-07-23
    • US09436488
    • 1999-11-09
    • Akiyoshi Takada , Kinji Saijo , Kazuo Yoshida , Nobuyuki Yoshimoto , Yoshihiko Isobe
    • Akiyoshi Takada , Kinji Saijo , Kazuo Yoshida , Nobuyuki Yoshimoto , Yoshihiko Isobe
    • H01M212
    • H01M2/345 , H01M2/1241 , H01M2/34
    • The object of the present invention is to provide a closed battery capable of rapidly releasing the internal pressure thereof and at the same time disconnecting the current to effectively prevent itself from temperature rising and exploding so that in such a completely closed battery it may assure the safety and reliability thereof, when the internal pressure is elevated due to short circuit, overcharge, reverse charge, or the like. A valve element 5 is provided with a slit 3 between the circumference thereof and a metal substrate 1. When the internal pressure of a battery is elevated, the valve element 5 is smoothly raised up together with a metal foil 2 from a bending fulcrum portion 4 to thereby cut a lead wire 6 or permit a braze portion 8 to detach from the lead wire 6, thus disconnecting the current reliably. Then, the metal foil which usually closes the slit formed around the circumference of the valve element 5 is allowed to burst stably and accurately at a prescribed pressure to thereby form a valve opening portion 7 so that the internal gas of the battery can be discharged.
    • 本发明的目的是提供一种能够快速释放其内部压力并且同时断开电流以有效防止其升高和爆炸的封闭电池，使得在这种完全闭合的电池中可确保安全性 当内部压力由于短路，过充电，反向充电等而升高时的可靠性。 阀元件5在其周边和金属基板1之间设置有狭缝3。当电池的内部压力升高时，阀元件5与金属箔2一起从弯曲支点部分4平滑地升起 从而切断引线6，或者使钎焊部8与引线6分离，从而可靠地断开电流。 然后，通过闭合形成在阀体5的周围的狭缝的金属箔，能够在规定的压力下稳定而准确地突出，从而形成阀开口部7，从而能够排出电池的内部气体。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 9. 发明授权
      US08146426B2 Physical sensor 失效
    • Physical sensor
    • 物理传感器
    • US08146426B2
    • 2012-04-03
    • US12318186
    • 2008-12-23
    • Kazuhiko Sugiura , Yoshihiko Isobe
    • Kazuhiko Sugiura , Yoshihiko Isobe
    • G01P15/125 , G01P9/04 , G01C19/56
    • G01P15/125 , G01P15/0802 , G01P15/18 , G01P2015/082
    • A physical sensor includes: a substrate having a silicon layer, an oxide film and a support layer; and a sensor portion having movable and fixed electrodes and a lower electrode. The movable electrode is supported by a beam on the support layer. The fixed electrode faces the movable electrode. The lower electrode is disposed on the support layer and faces the movable electrode. The physical sensor detects horizontal physical quantity based on a capacitance between the movable and fixed electrodes, and vertical physical quantity based on a capacitance between the movable and lower electrodes. The beam includes vertical and horizontal beams. The thickness of the vertical beam is smaller than the thickness of the horizontal beam.
    • 物理传感器包括：具有硅层，氧化膜和支撑层的衬底; 以及具有可移动和固定电极的传感器部分和下部电极。 可动电极由支撑层上的梁支撑。 固定电极面向可动电极。 下电极设置在支撑层上并面向可动电极。 物理传感器基于可移动和固定电极之间的电容以及基于可动电极和下电极之间的电容的垂直物理量来检测水平物理量。 梁包括垂直和水平梁。 垂直梁的厚度小于水平梁的厚度。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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