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1. 发明授权

US06503561B1 Liquid precursor mixtures for deposition of multicomponent metal containing materials 失效
标题翻译：用于沉积多组分含金属材料的液体前体混合物
公开(公告)号：US06503561B1
公开(公告)日：2003-01-07
申请号：US09546452
申请日：2000-04-10
申请人： Yoshihide Senzaki , David Allen Roberts , John Anthony Thomas Norman , Arthur Kenneth Hochberg
发明人： Yoshihide Senzaki , David Allen Roberts , John Anthony Thomas Norman , Arthur Kenneth Hochberg
IPC分类号： C23C1618
CPC分类号： C23C18/1225 , C23C16/34 , C23C16/40 , C23C16/401 , C23C16/405 , C23C18/1216 , C23C18/1254 , C23C18/1258
摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
摘要翻译：本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物，其中配体相同并且选自烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基，吡唑及其氟，氧和氮取代的类似物; b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。

2. 发明授权

US06500499B1 Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors 失效
标题翻译：使用无溶剂的前体液体混合物沉积和退火多组分ZrSnTi和HfSnTi氧化物薄膜
公开(公告)号：US06500499B1
公开(公告)日：2002-12-31
申请号：US09522634
申请日：2000-03-10
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
IPC分类号： B05D306
CPC分类号： C23C16/4481 , C23C16/40
摘要： Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
摘要翻译：通过CVD从金属络合物的液体混合物中通过直接液体注入和通过其它前体分散方法如气溶胶递送以及随后的退火以改善沉积膜的电性能，可以通过CVD沉积复杂的含金属的薄膜。该方法在电介质，铁电体，阻挡金属/电极，超导体，催化剂和保护涂层的微电子器件制造中具有商业成功的潜力。已经研究了该方法的应用，特别是ZrSnTiOx（锆钛酸锌或ZTT）和HfSnTiOx（钛酸铪钛酸盐或HTT）薄膜的CVD。

3. 发明授权

US06537613B1 Process for metal metalloid oxides and nitrides with compositional gradients 失效
标题翻译：具有组成梯度的金属准金属氧化物和氮化物的工艺
公开(公告)号：US06537613B1
公开(公告)日：2003-03-25
申请号：US09546867
申请日：2000-04-10
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
IPC分类号： C23C1606
CPC分类号： C23C16/52 , C23C16/029
摘要： A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40° C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d). An oxygen source can be added to result in a metal-metalloid oxide, or a nitrogen source can be added to result in a metal-metalloid nitride, or a mixture of an oxygen and a nitrogen source can be added to result in a metal-metalloid oxynitride. The metalloid would preferably be silicon.
摘要翻译：一种用于在电子材料的基底上的层中沉积具有金属和准金属的组成梯度的多金属和准金属化合物层的方法，包括：a）提供两种或更多种金属 - 配体和准金属 - 配体复合物前体，其中配体优选相同; b）将前体输送到基底所在的沉积区; c）在沉积条件下将基材与前体接触; d）在接触期间将沉积温度从第一温度变化到与所述第一温度至少40℃的第二不同温度，以及e）从所述前体沉积多个金属和准金属化合物层到所述衬底上，在层中的金属和准金属的组成梯度中作为步骤d）的结果。可以加入氧源以产生金属 - 类金属氧化物，或者可以加入氮源以产生金属 - 准金属氮化物，或者可以加入氧和氮源的混合物以产生金属 - 准金属氧氮化物准金属将优选为硅。

4. 发明授权

US06319567B1 Synthesis of tantalum nitride 失效
标题翻译：氮化钽的合成
公开(公告)号：US06319567B1
公开(公告)日：2001-11-20
申请号：US09281616
申请日：1999-03-30
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
IPC分类号： C23C1634
CPC分类号： C23C16/4481 , C23C16/34
摘要： A method for producing a tantalum nitride layer on a substrate, comprising; directly injecting a liquid mixture of (R1R2N)3Ta(═NR3) and (R4R5N)3Ta[&eegr;2—R6N═C (R7)(R8)] into a dispersing zone followed by delivering the dispersed mixture into a reactor containing the substrate at elevated temperature and reacting the mixture with a source of nitrogen selected from the group consisting of ammonia, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce the tantalum nitride layer on the substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen.
摘要翻译：一种在基板上制造氮化钽层的方法，包括：将（R1R2N）3Ta（= NR3）和（R4R5N）3Ta-R6N = C（R7）（R8）]的液体混合物直接注入到分散区中，然后将分散的混合物输送到含有底物的反应器中，温度并使混合物与选自氨，烷基胺，N 2 H 2，烷基肼，N 2及其混合物的氮源反应，以在衬底上产生氮化钽层，其中R1，R2，R3，R4， R 5，R 6，R 7和R 8分别是C 1-6烷基，芳基或氢。

5. 发明授权

US06238734B1 Liquid precursor mixtures for deposition of multicomponent metal containing materials 失效
标题翻译：用于沉积多组分含金属材料的液体前体混合物
公开(公告)号：US06238734B1
公开(公告)日：2001-05-29
申请号：US09350074
申请日：1999-07-08
申请人： Yoshihide Senzaki , David Allen Roberts , John Anthony Thomas Norman
发明人： Yoshihide Senzaki , David Allen Roberts , John Anthony Thomas Norman
IPC分类号： C23C1618
CPC分类号： C23C18/1216 , C23C16/34 , C23C16/40 , C23C16/401 , C23C16/405 , C23C18/1225 , C23C18/1254 , C23C18/1258
摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
摘要翻译：本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物，卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物;其中配体是相同的并且选自烷基，醇盐，卤化物， b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。

6. 发明授权

US06096913A Production of metal-ligand complexes 失效
标题翻译：金属 - 配体配合物的生产
公开(公告)号：US06096913A
公开(公告)日：2000-08-01
申请号：US329417
申请日：1999-06-10
申请人： John Anthony Thomas Norman , Yoshihide Senzaki , David Allen Roberts
发明人： John Anthony Thomas Norman , Yoshihide Senzaki , David Allen Roberts
IPC分类号： C07C45/77 , C07B61/00 , C07C49/167 , C07F1/00 , C07F1/08 , C07F7/08 , C07F19/00 , C23C16/18 , H01L21/28 , H01L21/285 , C23C16/00
CPC分类号： C07F1/005 , C23C16/18
摘要： In a process for the synthesis of a first metal-ligand complex, M.sup.+n (L.sup.-).sub.n, where n.gtoreq.1, from a metal compound precursor and a ligand precursor, where the metal of the metal compound precursor may during the synthesis change to a valence in excess of n; the improvement, to suppress formation of a second metal-ligand complex of the metal with a valence in excess of n, of adding the elemental form of the metal to the synthesis of the first metal-ligand complex.
摘要翻译：在金属化合物前体和配体前体合成第一金属 - 配体络合物M + n（L）n，其中n> / = 1的方法中，其中金属化合物前体的金属可以在合成变为超过n的化合价; 改进，以抑制金属元素形式向第一金属 - 配体络合物的合成中添加元素形式的金属的第二金属 - 配体络合物，其价态超过n。

7. 发明授权

US6046364A Regeneration of metal CVD precursors 失效
标题翻译：金属CVD前体的再生
公开(公告)号：US6046364A
公开(公告)日：2000-04-04
申请号：US206427
申请日：1998-12-07
申请人： John Anthony Thomas Norman , John Cameron Gordon , Yoshihide Senzaki
发明人： John Anthony Thomas Norman , John Cameron Gordon , Yoshihide Senzaki
IPC分类号： B01J19/00 , C07C45/85 , C07C49/167 , C07C49/92 , C07F1/08 , C07F7/08 , C23C16/00 , C23C16/44 , H01L21/285 , C07C205/00
CPC分类号： C07F7/082 , C07C45/85
摘要： A process for recovering a 1,1,1,5,5,5-hexafluoro-2,4-pentanedione ligand from a metal-ligand complex byproduct such as Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2, comprising: providing a copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 in a process stream; cooling and condensing the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 to separate it from the process stream; contacting the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 with a protonation agent, such as: sulfuric acid, hydrochloric acid, hydroiodic acid, hydrobromic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acid ion exchange resin, hydrogen sulfide, water vapor and mixtures thereof; and recovering 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
摘要翻译：从金属 - 配体络合物副产物例如Cu + 2（1,1,1,5,5,5-四甲基-1,1,1,5,5,5-四氢 - 六氟-2,4-戊二酮-1）2，其包括：提供Cu + 2（1,1,1,5,5,5-六氟-2,4-戊二酮-1）2的铜配体络合物副产物流程流冷却并冷凝Cu + 2（1,1,1,5,5,5-六氟-2,4-戊二酮-1）2的铜配体络合物副产物，使其与工艺流分离; 将Cu + 2（1,1,1,5,5,5-六氟-2,4-戊二酮-1）2的铜配体络合物副产物与质子化试剂如硫酸，盐酸，氢碘酸酸，氢溴酸，三氟乙酸，三氟甲磺酸，酸性离子交换树脂，硫化氢，水蒸气及其混合物; 并回收1,1,1,5,5,5-六氟-2,4-戊二酮。

8. 发明授权

US06869876B2 Process for atomic layer deposition of metal films 失效
标题翻译：金属膜原子层沉积工艺
公开(公告)号：US06869876B2
公开(公告)日：2005-03-22
申请号：US10324781
申请日：2002-12-20
申请人： John Anthony Thomas Norman , David Allen Roberts , Melanie Anne Boze
发明人： John Anthony Thomas Norman , David Allen Roberts , Melanie Anne Boze
IPC分类号： C23C16/14 , C23C10/60 , C23C16/08 , C23C16/18 , C23C16/30 , C23C16/56 , C23C26/00 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C10/60 , C23C16/08 , C23C16/30 , C23C16/56 , C23C26/00 , H01L21/28562 , H01L21/76846 , H01L21/76862 , H01L21/76871
摘要： In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.
摘要翻译：在本发明中，生长金属卤化物膜，然后将其还原成金属膜，而不是直接在基板表面上生长金属膜。在某些实施方案中，金属卤化物膜从至少两种前体生长：含卤素的前体和含金属的前体。然后将金属卤化物膜暴露于还原剂以形成金属膜。在某些优选的实施方案中，在生长步骤完成之前，将金属卤化物膜暴露于还原剂。

9. 发明授权

US07919409B2 Materials for adhesion enhancement of copper film on diffusion barriers 失效
标题翻译：扩散壁上铜膜粘附增强的材料
公开(公告)号：US07919409B2
公开(公告)日：2011-04-05
申请号：US12192603
申请日：2008-08-15
申请人： Hansong Cheng , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , David Allen Roberts , Bo Han , Chenggang Zhou , Jinping Wu
发明人： Hansong Cheng , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , David Allen Roberts , Bo Han , Chenggang Zhou , Jinping Wu
IPC分类号： H01L21/285
CPC分类号： H01L21/76846
摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.
摘要翻译：我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。

10. 发明申请

US20070193026A1 Electron attachment assisted formation of electrical conductors 审中-公开
标题翻译：电子附件辅助形成电导体
公开(公告)号：US20070193026A1
公开(公告)日：2007-08-23
申请号：US11481444
申请日：2006-07-06
申请人： Chun Christine Dong , Eugene Joseph Karwacki , Richard E. Patrick , David Allen Roberts , Robert Krantz Pinschmidt , John Anthony Thomas Norman , John Christopher Ivankovits
发明人： Chun Christine Dong , Eugene Joseph Karwacki , Richard E. Patrick , David Allen Roberts , Robert Krantz Pinschmidt , John Anthony Thomas Norman , John Christopher Ivankovits
IPC分类号： B23K35/38
CPC分类号： H05K3/105 , C23C18/08 , H01L21/4867 , H05K2203/087 , H05K2203/1157 , H05K2203/121 , Y10T29/49117 , Y10T29/49126 , Y10T29/49128 , Y10T29/49155
摘要： This invention is directed to a method of forming electrical conductors comprised of conductive metals generally carried on a substrate. In the method, a conductor formulation generally comprised of metal particles or metal precursor or mixture thereof, typically in the form of an ink or paste, is applied to the substrate and converted into a conductive metal by application of sufficient heat and for a sufficient time to effect sintering thereof while in the presence of a negatively charged ionic reducing gas.
摘要翻译：本发明涉及一种形成电导体的方法，该导体由通常载于衬底上的导电金属组成。在该方法中，通常由金属颗粒或金属前体或其混合物（通常为油墨或糊状物）组成的导体制剂施加到基底上，并通过施加足够的热量并足够的时间转化为导电金属在负电荷的离子还原气体的存在下进行烧结。

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