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1. 发明申请

US20110143032A1 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants 有权
标题翻译： Porogen，Porogenated前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜
公开(公告)号：US20110143032A1
公开(公告)日：2011-06-16
申请号：US13031387
申请日：2011-02-21
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： C23C16/44 , C09D7/12
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译：多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。随后除去致孔剂以提供多孔膜。用于形成膜的组合物，例如试剂盒包括致孔剂和前体。致孔前体也可用于提供薄膜。

2. 发明申请

US20110120875A1 Volatile Group 2 Metal Precursors 有权
标题翻译：挥发性组2金属前体
公开(公告)号：US20110120875A1
公开(公告)日：2011-05-26
申请号：US12785041
申请日：2010-05-21
申请人： John Anthony Thomas Norman
发明人： John Anthony Thomas Norman
IPC分类号： H01B1/12 , C07F3/00 , C25D5/00
CPC分类号： C07F3/003
摘要： A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion.Synthesis of the novel compounds and their use to form BST films is also contemplated.
摘要翻译：包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多官能化的吡咯基阴离子的化合物。或者，一个阴离子可以被第二个非吡咯基阴离子取代。还考虑了新型化合物的合成及其用于形成BST膜的用途。

3. 发明申请

US20080254218A1 Metal Precursor Solutions For Chemical Vapor Deposition 审中-公开
标题翻译：用于化学气相沉积的金属前体溶液
公开(公告)号：US20080254218A1
公开(公告)日：2008-10-16
申请号：US12058200
申请日：2008-03-28
申请人： Xinjian Lei , Liam Quinn , John Anthony Thomas Norman , William Franklin Burgoyne , Gauri Sankar Lal , Michael Ulman , Daniel P. Spence
发明人： Xinjian Lei , Liam Quinn , John Anthony Thomas Norman , William Franklin Burgoyne , Gauri Sankar Lal , Michael Ulman , Daniel P. Spence
IPC分类号： C23C18/44
CPC分类号： C23C16/18 , C23C16/16
摘要： Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.
摘要翻译：描述了用于在衬底上制造保形的含金属膜的用于化学气相沉积工艺的包含原子层沉积的前体液体溶液的金属源。更具体地说，金属源前体液体溶液包括（i）至少一种选自β-二酮酸酯，β-酮亚胺酸酯，β-二亚胺，烷基金属，金属羰基，烷基金属羰基，芳基金属，芳基金属羰基，环戊二烯基金属，环戊二烯基金属异腈，环戊二烯基金属腈，环戊二烯基金属羰基，金属醇盐，金属醚醇盐和金属酰胺，其中配体可以是单齿，双齿和多齿配位的金属原子，金属选自组2 14元素，和（ii）选自有机酰胺的溶剂，包括用于这种含金属源的前体的线性酰胺和环状酰胺。

4. 发明申请

US20070193026A1 Electron attachment assisted formation of electrical conductors 审中-公开
标题翻译：电子附件辅助形成电导体
公开(公告)号：US20070193026A1
公开(公告)日：2007-08-23
申请号：US11481444
申请日：2006-07-06
申请人： Chun Christine Dong , Eugene Joseph Karwacki , Richard E. Patrick , David Allen Roberts , Robert Krantz Pinschmidt , John Anthony Thomas Norman , John Christopher Ivankovits
发明人： Chun Christine Dong , Eugene Joseph Karwacki , Richard E. Patrick , David Allen Roberts , Robert Krantz Pinschmidt , John Anthony Thomas Norman , John Christopher Ivankovits
IPC分类号： B23K35/38
CPC分类号： H05K3/105 , C23C18/08 , H01L21/4867 , H05K2203/087 , H05K2203/1157 , H05K2203/121 , Y10T29/49117 , Y10T29/49126 , Y10T29/49128 , Y10T29/49155
摘要： This invention is directed to a method of forming electrical conductors comprised of conductive metals generally carried on a substrate. In the method, a conductor formulation generally comprised of metal particles or metal precursor or mixture thereof, typically in the form of an ink or paste, is applied to the substrate and converted into a conductive metal by application of sufficient heat and for a sufficient time to effect sintering thereof while in the presence of a negatively charged ionic reducing gas.
摘要翻译：本发明涉及一种形成电导体的方法，该导体由通常载于衬底上的导电金属组成。在该方法中，通常由金属颗粒或金属前体或其混合物（通常为油墨或糊状物）组成的导体制剂施加到基底上，并通过施加足够的热量并足够的时间转化为导电金属在负电荷的离子还原气体的存在下进行烧结。

5. 发明授权

US07034169B1 Volatile metal β-ketoiminate complexes 有权
标题翻译：挥发性金属β-酮亚胺络合物
公开(公告)号：US07034169B1
公开(公告)日：2006-04-25
申请号：US11111455
申请日：2005-04-21
申请人： John Anthony Thomas Norman
发明人： John Anthony Thomas Norman
IPC分类号： C07F1/08 , C23C16/00 , B32B15/04
CPC分类号： C23C16/18 , C07F1/005 , C07F7/0803 , Y10T428/31678
摘要： Metal complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, and/or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described herein may be used as precursors to deposit metal or metal-containing films on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译：包含铜，银，金，钴，钌，铑，铂，钯，镍，锇和/或铟的金属络合物及其制备和使用方法在此描述。在某些实施方案中，本文所述的金属络合物可用作通过例如原子层沉积或化学气相沉积条件在基底上沉积金属或含金属膜的前体。

6. 发明授权

US06238734B1 Liquid precursor mixtures for deposition of multicomponent metal containing materials 失效
标题翻译：用于沉积多组分含金属材料的液体前体混合物
公开(公告)号：US06238734B1
公开(公告)日：2001-05-29
申请号：US09350074
申请日：1999-07-08
申请人： Yoshihide Senzaki , David Allen Roberts , John Anthony Thomas Norman
发明人： Yoshihide Senzaki , David Allen Roberts , John Anthony Thomas Norman
IPC分类号： C23C1618
CPC分类号： C23C18/1216 , C23C16/34 , C23C16/40 , C23C16/401 , C23C16/405 , C23C18/1225 , C23C18/1254 , C23C18/1258
摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
摘要翻译：本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物，卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物;其中配体是相同的并且选自烷基，醇盐，卤化物， b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。

7. 发明授权

US06096913A Production of metal-ligand complexes 失效
标题翻译：金属 - 配体配合物的生产
公开(公告)号：US06096913A
公开(公告)日：2000-08-01
申请号：US329417
申请日：1999-06-10
申请人： John Anthony Thomas Norman , Yoshihide Senzaki , David Allen Roberts
发明人： John Anthony Thomas Norman , Yoshihide Senzaki , David Allen Roberts
IPC分类号： C07C45/77 , C07B61/00 , C07C49/167 , C07F1/00 , C07F1/08 , C07F7/08 , C07F19/00 , C23C16/18 , H01L21/28 , H01L21/285 , C23C16/00
CPC分类号： C07F1/005 , C23C16/18
摘要： In a process for the synthesis of a first metal-ligand complex, M.sup.+n (L.sup.-).sub.n, where n.gtoreq.1, from a metal compound precursor and a ligand precursor, where the metal of the metal compound precursor may during the synthesis change to a valence in excess of n; the improvement, to suppress formation of a second metal-ligand complex of the metal with a valence in excess of n, of adding the elemental form of the metal to the synthesis of the first metal-ligand complex.
摘要翻译：在金属化合物前体和配体前体合成第一金属 - 配体络合物M + n（L）n，其中n> / = 1的方法中，其中金属化合物前体的金属可以在合成变为超过n的化合价; 改进，以抑制金属元素形式向第一金属 - 配体络合物的合成中添加元素形式的金属的第二金属 - 配体络合物，其价态超过n。

8. 发明授权

US08680289B2 Complexes of imidazole ligands 有权
标题翻译：咪唑配体的配合物
公开(公告)号：US08680289B2
公开(公告)日：2014-03-25
申请号：US13363918
申请日：2012-02-01
申请人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III
发明人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III
IPC分类号： C07F15/00 , C23C16/18
CPC分类号： C07F17/02 , C07F5/00 , C07F5/003 , C07F7/003 , C07F7/28 , C07F15/02 , C07F15/04 , C07F15/06 , C07F17/00
摘要： Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.
摘要翻译：描述了金属咪唑盐络合物，其中描述了用大体积基团官能化的咪唑配体及其阴离子配对物，即咪唑盐。包括一种或多种这样的多烷基化咪唑酸盐阴离子配位到金属或一种以上选自碱金属，过渡金属，镧系元素金属，锕系金属，主要金属（包括硫族化物）的金属中。或者，除了其它不同的阴离子之外，多种不同的咪唑阴离子可以与金属配位以制备新的络合物。还考虑了新化合物的合成及其用于形成含薄金属膜的用途。

9. 发明授权

US08507704B2 Liquid composition containing aminoether for deposition of metal-containing films 有权
标题翻译：含有含有金属的膜的氨基醚的液体组合物
公开(公告)号：US08507704B2
公开(公告)日：2013-08-13
申请号：US12871284
申请日：2010-08-30
申请人： Sergei Vladimirovich Ivanov , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , Laura M. Matz
发明人： Sergei Vladimirovich Ivanov , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , Laura M. Matz
IPC分类号： C07F5/00 , C07F5/06 , C07F9/00 , C07F13/00 , C07F7/00 , C07F11/00 , C07F1/00 , C07F3/00 , C07F15/00 , C07C49/92
CPC分类号： C09D1/00 , C23C16/18 , C23C16/404 , C23C16/448
摘要： A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.
摘要翻译：一种制剂，其包含：a）至少一种金属 - 配体配合物，其中一个或多个配体选自β-二酮酸酯，β-酮亚胺酸酯，β-酮酯酸酯，β-二亚胺酯，烷基，羰基，烷基羰基，环戊二烯基，吡咯烷基，烷氧基化物，脒基，咪唑啉及其混合物; 金属选自元素周期表第2〜16族元素; 和（b）至少一种选自下组的氨基醚：R1R2NR3OR4NR5R6，R1OR4NR5R6，O（CH2CH2）2NR1，R1R2NR3N（CH2CH2）2O，R1R2NR3OR4N（CH2CH2）2O，O（CH2CH2）2NR1OR2N（CH2CH2）其中R1-6独立地选自C1-10直链烷基，C1-10支链烷基，C1-10环烷基，C6-C10芳族，C1-10烷基胺，C1-10烷基氨基烷基，C1-10醚，C4 -C 10环醚，C 4 -C 10环氨基醚及其混合物。

10. 发明申请

US20130011579A1 Metal-Enolate Precursors For Depositing Metal-Containing Films 审中-公开
标题翻译：用于沉积含金属膜的金属烯醇化物前体
公开(公告)号：US20130011579A1
公开(公告)日：2013-01-10
申请号：US13299448
申请日：2011-11-18
申请人： John Anthony Thomas Norman , Xinjian Lei
发明人： John Anthony Thomas Norman , Xinjian Lei
IPC分类号： C07F7/28 , C23C16/455
CPC分类号： C07F17/00 , C23C16/18 , C23C16/405 , C23C16/45553
摘要： Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.
摘要翻译：提供了适合用作含金属膜的气相沉积前体的有机金属化合物。还提供了使用某些有机金属前体沉积含金属膜的方法。这种含金属膜在电子器件的制造中特别有用。

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