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    • 1. 再颁专利
    • Code conversion method and apparatus, code recording medium, code recording apparatus and code reproducing apparatus
    • 代码转换方法和装置,代码记录介质,代码记录装置和代码再现装置
    • USRE39771E1
    • 2007-08-14
    • US09844740
    • 2001-04-26
    • Yoshiharu KobayashiAkira MutohShin-ichi TanakaNobuo Akahira
    • Yoshiharu KobayashiAkira MutohShin-ichi TanakaNobuo Akahira
    • H03M7/00
    • H03M5/145
    • A code conversion method and apparatus is provided for scrambling and modulating data. The method and apparatus includes scrambling an input main data unit based on any of plural types of pseudo-random number sequences, and modulating the scrambled main data unit based on any of plural types of modulation data. An output main data unit is produced from the modulated main data unit, and a calculated value representing a difference between a number of 0 bits and a number of 1 bits included in the output main data unit is obtained. Any of the modulation data is then selected dependent upon the calculated value. The method and apparatus further includes determining whether or not a variation of the calculated value has exceeded a predetermined threshold, newly selecting another pseudo-random number sequence used for the step of scrambling if it is determined that the variation of the calculated value has exceeded the predetermined threshold value, and re-scrambling the input main data unit based on the newly selected pseudo-random number sequence.
    • 提供了用于对数据进行加扰和调制的代码转换方法和装置。 所述方法和装置包括基于多种类型的伪随机数序列中的任何一种对输入主数据单元进行加扰,并且基于多种类型的调制数据中的任何一种调制加扰的主数据单元。 从调制主数据单元产生输出主数据单元,得到表示输出主数据单元中包含的0位数与1位数之间的差的计算值。 然后根据计算值选择任何调制数据。 所述方法和装置还包括:确定计算值的变化是否已经超过预定阈值,如果确定计算值的变化已经超过所述阈值,则新选择用于加扰步骤的另一伪随机数序列 基于新选择的伪随机数序列重新加扰输入主数据单元。
    • 2. 发明授权
    • Code conversion method and apparatus, code recording medium, code
recording apparatus and code reproducing apparatus
    • 代码转换方法和装置,代码记录介质,代码记录装置和代码再现装置
    • US5898394A
    • 1999-04-27
    • US900436
    • 1997-07-25
    • Yoshiharu KobayashiAkira MutohShin-ichi TanakaNobuo Akahira
    • Yoshiharu KobayashiAkira MutohShin-ichi TanakaNobuo Akahira
    • G11B20/10G11B20/14H03M5/14H03M7/00
    • G11B20/10009G11B20/10G11B20/1426H03M5/145
    • A code conversion method and apparatus is provided for scrambling and modulating data. The method and apparatus includes scrambling an input main data unit based on any of plural types of pseudo-random number sequences, and modulating the scrambled main data unit based on any of plural types of modulation data. An output main data unit is produced from the modulated main data unit, and a calculated value representing a difference between a number of 0 bits and a number of 1 bits included in the output main data unit is obtained. Any of the modulation data is then selected dependent upon the calculated value. The method and apparatus further includes determining whether or not a variation of the calculated value has exceeded a predetermined threshold, newly selecting another pseudo-random number sequence used for the step of scrambling if it is determined that the variation of the calculated value has exceeded the predetermined threshold value, and re-scrambling the input main data unit based on the newly selected pseudo-random number sequence.
    • 提供了用于对数据进行加扰和调制的代码转换方法和装置。 所述方法和装置包括基于多种类型的伪随机数序列中的任何一种对输入主数据单元进行加扰,并且基于多种类型的调制数据中的任何一种调制加扰的主数据单元。 从调制主数据单元产生输出主数据单元,得到表示输出主数据单元中包含的0位数与1位数之间的差的计算值。 然后根据计算值选择任何调制数据。 所述方法和装置还包括:确定计算值的变化是否已经超过预定阈值,如果确定计算值的变化已经超过所述阈值,则新选择用于加扰步骤的另一伪随机数序列 基于新选择的伪随机数序列重新加扰输入主数据单元。
    • 6. 发明授权
    • Resist developing process
    • 抵制发展过程
    • US06379057B1
    • 2002-04-30
    • US09733379
    • 2000-06-02
    • Akira Mutoh
    • Akira Mutoh
    • G03D500
    • G03F7/3021
    • A developing process for obtaining a resist pattern on a semiconductor wafer includes puddling a developer on a wafer and holding a wafer inclined at a predetermined tilt angle in the puddled condition and repeating alternately stoppage and slow rotation plural times. This can make the central pattern width narrower selectively simply by apparatus adjustment, in case where, otherwise the pattern width of a wafer's central portion becomes wide, thereby achieving an increased pattern uniformity of the wafer and serve as improving the performances.
    • 用于获得半导体晶片上的抗蚀剂图案的显影方法包括将晶片上的显影剂搅拌并保持在挤压状态下以预定倾斜角度倾斜的晶片,并且重复交替停止和慢旋多次。 这可以通过设备调整简单地选择中心图案宽度,否则晶片的中心部分的图形宽度变宽,从而实现晶片的图案均匀性提高,并提高其性能。
    • 7. 发明授权
    • Resist developing process
    • 抵制发展过程
    • US06207352B1
    • 2001-03-27
    • US09127763
    • 1998-07-31
    • Akira Mutoh
    • Akira Mutoh
    • G03F730
    • G03F7/3021
    • A developing process for obtaining a resist pattern on a semiconductor wafer includes puddling a developer on a wafer and holding a wafer inclined at a predetermined tilt angle in the puddled condition and repeating alternately stoppage and slow rotation plural times. This can make the central pattern width narrower selectively simply by apparatus adjustment, in case where, otherwise the pattern width of a wafer's central portion becomes wide, thereby achieving an increased pattern uniformity of the wafer and serve as improving the performances.
    • 用于获得半导体晶片上的抗蚀剂图案的显影方法包括将晶片上的显影剂搅拌并保持在挤压状态下以预定倾斜角度倾斜的晶片,并且重复交替停止和慢旋多次。 这可以通过设备调整简单地选择中心图案宽度,否则晶片的中心部分的图形宽度变宽,从而实现晶片的图案均匀性提高,并提高其性能。
    • 8. 发明授权
    • Method of and apparatus for developing exposed photoresist to prevent impurity from being attached to wafer surface
    • 用于显影曝光的光致抗蚀剂以防止杂质附着到晶片表面的方法和设备
    • US06548228B2
    • 2003-04-15
    • US09772291
    • 2001-01-29
    • Akira Mutoh
    • Akira Mutoh
    • G03F730
    • G03F7/3021
    • After a silicon wafer is held horizontally such that a surface thereof coated with a photoresist faces upwardly, the surface of the silicon wafer is supplied with a cleaning liquid to form a puddle thereof before a developing liquid is supplied. After the puddle of the cleaning liquid is formed, the silicon wafer starts to be rotated and the developing liquid starts to be supplied to the surface of the silicon wafer. The developing liquid is supplied to the surface of the silicon wafer with the puddle of the cleaning liquid being formed thereon. Alternatively, developing liquid is supplied to the surface of the silicon wafer which is being supplied with cleaning liquid while the silicon wafer is being rotated.
    • 在硅晶片被水平地保持以使其被光致抗蚀剂表面向上表面之后,在提供显影液之前,向硅晶片的表面供应清洁液以形成其水坑。 在形成清洗液的水坑之后,硅晶片开始旋转,并且显影液开始被供应到硅晶片的表面。 在其上形成有清洗液的水坑的情况下,将显影液供给到硅晶片的表面。 或者,当硅晶片正在旋转时,将显影液供给到被供给清洗液的硅晶片的表面。