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    • 10. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08648343B2
    • 2014-02-11
    • US12839519
    • 2010-07-20
    • Shunpei YamazakiJunichiro SakataHiroyuki MiyakeHideaki KuwabaraIkuko Kawamata
    • Shunpei YamazakiJunichiro SakataHiroyuki MiyakeHideaki KuwabaraIkuko Kawamata
    • H01L27/12
    • H01L27/1225H01L27/124
    • An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
    • 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分(也称为像素部分)。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管,其中使用金属形成源电极和漏电极,并且使用氧化物半导体形成沟道层,以及使用 金属。 显示部分包括用于像素的沟道保护薄膜晶体管,其中使用氧化物导体形成源电极和漏电极,并且使用氧化物半导体形成半导体层,以及使用氧化物导体形成的显示部分布线 。 设置在半导体器件中的薄膜晶体管形成有使用多色调掩模形成的抗蚀剂掩模。