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1. 发明授权

US07285770B2 Light scanning apparatus 失效
标题翻译：光扫描装置
公开(公告)号：US07285770B2
公开(公告)日：2007-10-23
申请号：US11330115
申请日：2006-01-12
申请人： Yoshiaki Nozaki , Junichi Nakamura , Shinichi Nakayama
发明人： Yoshiaki Nozaki , Junichi Nakamura , Shinichi Nakayama
IPC分类号： H01J3/14 , G02B26/08
CPC分类号： G02B26/085 , G02B26/105
摘要： A light is emitted from a light emitting element toward the other surface in a thickness direction of a scanning mirror which can be angularly displaced about an axial line. At least either one of a first light receiving portion and a second light receiving portion receives a light which is emitted from the light emitting element and reflected by a reflecting mirror. The first light receiving portion, the second light receiving portion, and the signal output section produce an electronic signal containing position information which indicates a position which is irradiated with the above-mentioned light. This position information indicates an amount of angular displacement of the scanning mirror. On the basis of this position information, a driving section scans the scanning mirror so that the predetermined irradiation position can be irradiated with a light emitted from a first light source.
摘要翻译：从扫描反射镜的厚度方向上的发光元件朝向另一个表面发出光，该扫描反射镜可以围绕轴线成角位移。第一光接收部分和第二光接收部分中的至少一个接收从发光元件发射并被反射镜反射的光。第一光接收部分，第二光接收部分和信号输出部分产生包含表示用上述光照射的位置的位置信息的电子信号。该位置信息表示扫描镜的角位移量。基于该位置信息，驱动部扫描扫描镜，使得可以用从第一光源发射的光照射预定照射位置。

2. 发明申请

US20060175544A1 Light scanning apparatus 失效
标题翻译：光扫描装置
公开(公告)号：US20060175544A1
公开(公告)日：2006-08-10
申请号：US11330115
申请日：2006-01-12
申请人： Yoshiaki Nozaki , Junichi Nakamura , Shinichi Nakayama
发明人： Yoshiaki Nozaki , Junichi Nakamura , Shinichi Nakayama
IPC分类号： H01J40/14
CPC分类号： G02B26/085 , G02B26/105
摘要： A light is emitted from a light emitting element toward the other surface in a thickness direction of a scanning mirror which can be angularly displaced about an axial line. At least either one of a first light receiving portion and a second light receiving portion receives a light which is emitted from the light emitting element and reflected by a reflecting mirror. The first light receiving portion, the second light receiving portion, and the signal output section produce an electronic signal containing position information which indicates a position which is irradiated with the above-mentioned light. This position information indicates an amount of angular displacement of the scanning mirror. On the basis of this position information, a driving section scans the scanning mirror so that the predetermined irradiation position can be irradiated with a light emitted from a first light source.
摘要翻译：从扫描反射镜的厚度方向上的发光元件朝向另一个表面发出光，该扫描反射镜可以围绕轴线成角位移。第一光接收部分和第二光接收部分中的至少一个接收从发光元件发射并被反射镜反射的光。第一光接收部分，第二光接收部分和信号输出部分产生包含表示用上述光照射的位置的位置信息的电子信号。该位置信息表示扫描镜的角位移量。基于该位置信息，驱动部扫描扫描镜，使得可以用从第一光源发射的光照射预定照射位置。

3. 发明授权

US07733105B2 Voltage clamp circuit and semiconductor device, overcurrent protection circuit, voltage measurement probe, voltage measurement device and semiconductor evaluation device respectively using the same 有权
标题翻译：电压钳位电路和半导体器件，过电流保护电路，电压测量探头，电压测量装置和半导体评估装置分别使用
公开(公告)号：US07733105B2
公开(公告)日：2010-06-08
申请号：US12139288
申请日：2008-06-13
申请人： Yoshiaki Nozaki , Hiroshi Kawamura , John Kevin Twynam , Masatomo Hasegawa
发明人： Yoshiaki Nozaki , Hiroshi Kawamura , John Kevin Twynam , Masatomo Hasegawa
IPC分类号： G01R31/02
CPC分类号： G01R1/06766 , G01R31/2621
摘要： In a voltage clamp circuit, a normally-on type field-effect transistor having a negative threshold voltage has a drain connected to an input node, a source connected to an output node and grounded via a resistance element, and a gate supplied with an output voltage of a variable direct-current power supply. When a voltage at the output node becomes higher than a clamping voltage because of voltage drop of the resistance element, the field-effect transistor is tuned off. Accordingly, the output voltage is limited to be at most the clamping voltage. Thus, a response speed is higher than those of conventional voltage clamp circuits using diodes or the like.
摘要翻译：在电压钳位电路中，具有负阈值电压的常导型场效应晶体管具有连接到输入节点的漏极，连接到输出节点的源极，并且经由电阻元件接地，以及提供有输出的栅极可变直流电源的电压。当输出节点的电压由于电阻元件的电压降而变得高于钳位电压时，场效应晶体管被关断。因此，输出电压被限制为至多钳位电压。因此，响应速度高于使用二极管等的常规电压钳位电路的响应速度。

4. 发明申请

US20120292635A1 COMPOSITE SEMICONDUCTOR DEVICE 有权
标题翻译：复合半导体器件
公开(公告)号：US20120292635A1
公开(公告)日：2012-11-22
申请号：US13574993
申请日：2010-12-28
申请人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
发明人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
IPC分类号： H01L29/20
CPC分类号： H01L27/0605 , H01L27/0629
摘要： This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.
摘要翻译：该复合半导体器件具有在第一和第二端子之间串联连接的常开第一场效应晶体管和常关第二场效应晶体管，第一和第二场效应晶体管的栅极分别连接到第二和第三端子，并且N个二极管在第二场效应晶体管的漏极和源极之间沿正向串联连接。因此，第二场效应晶体管的漏极 - 源极电压（Vds）可以被限制在不高于第二场效应晶体管的耐受电压的电压。

5. 发明申请

US20080035954A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080035954A1
公开(公告)日：2008-02-14
申请号：US11889135
申请日：2007-08-09
申请人： Yoshiaki Nozaki
发明人： Yoshiaki Nozaki
IPC分类号： H01L31/0224 , H01L21/02
CPC分类号： H01L27/1443 , H01L29/2003 , H01L29/7787 , H01L31/105
摘要： A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon, and a switching element formed using the wide-bandgap semiconductor layer. The switching element is electrically connected to the photodiode so as to be on/off-controlled by a control signal from the photodiode.
摘要翻译：半导体器件包括使用硅衬底形成的光电二极管，在硅衬底上形成的带隙大于硅的宽带隙半导体层，以及使用宽带隙半导体层形成的开关元件。开关元件电连接到光电二极管，以便通过来自光电二极管的控制信号进行开/关控制。

6. 发明授权

US08766275B2 Composite semiconductor device 有权
标题翻译：复合半导体器件
公开(公告)号：US08766275B2
公开(公告)日：2014-07-01
申请号：US13574993
申请日：2010-12-28
申请人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
发明人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
IPC分类号： H01L31/0256
CPC分类号： H01L27/0605 , H01L27/0629
摘要： This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.
摘要翻译：该复合半导体器件具有在第一和第二端子之间串联连接的常开第一场效应晶体管和常关第二场效应晶体管，第一和第二场效应晶体管的栅极分别连接到第二和第三端子，并且N个二极管在第二场效应晶体管的漏极和源极之间沿正向串联连接。因此，第二场效应晶体管的漏极 - 源极电压（Vds）可以被限制在不高于第二场效应晶体管的耐受电压的电压。

7. 发明申请

US20080309355A1 VOLTAGE CLAMP CIRCUIT AND SEMICONDUCTOR DEVICE, OVERCURRENT PROTECTION CIRCUIT, VOLTAGE MEASUREMENT PROBE, VOLTAGE MEASUREMENT DEVICE AND SEMICONDUCTOR EVALUATION DEVICE RESPECTIVELY USING THE SAME 有权
标题翻译：电压钳位电路和半导体器件，过流保护电路，电压测量探头，电压测量器件和半导体评估器件，使用相同的方法
公开(公告)号：US20080309355A1
公开(公告)日：2008-12-18
申请号：US12139288
申请日：2008-06-13
申请人： Yoshiaki Nozaki , Hiroshi Kawamura , John Kevin Twynam , Masatomo Hasegawa
发明人： Yoshiaki Nozaki , Hiroshi Kawamura , John Kevin Twynam , Masatomo Hasegawa
IPC分类号： G01R31/26 , H03L5/00
CPC分类号： G01R1/06766 , G01R31/2621
摘要： In a voltage clamp circuit, a normally-on type field-effect transistor having a negative threshold voltage has a drain connected to an input node, a source connected to an output node and grounded via a resistance element, and a gate supplied with an output voltage of a variable direct-current power supply. When a voltage at the output node becomes higher than a clamping voltage because of voltage drop of the resistance element, the field-effect transistor is tuned off. Accordingly, the output voltage is limited to be at most the clamping voltage. Thus, a response speed is higher than those of conventional voltage clamp circuits using diodes or the like.
摘要翻译：在电压钳位电路中，具有负阈值电压的常导型场效应晶体管具有连接到输入节点的漏极，连接到输出节点的源极，并且经由电阻元件接地，以及提供有输出的栅极可变直流电源的电压。当输出节点的电压由于电阻元件的电压降而变得高于钳位电压时，场效应晶体管被关断。因此，输出电压被限制为至多钳位电压。因此，响应速度高于使用二极管等的常规电压钳位电路的响应速度。

8. 发明授权

US08395248B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08395248B2
公开(公告)日：2013-03-12
申请号：US12726824
申请日：2010-03-18
申请人： Yoshiaki Nozaki
发明人： Yoshiaki Nozaki
IPC分类号： H01L23/495
CPC分类号： H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/28 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/05073 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/29339 , H01L2224/371 , H01L2224/37147 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48491 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48847 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/4945 , H01L2224/49505 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2224/85191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/48824
摘要： A semiconductor device includes a lead frame 1 having a first lead 6, a second lead 7 and a third lead 8. A power transistor 2 is placed on the first lead 6, and the power transistor 2 is connected to the first lead 6. The power transistor 2 has a drain electrode on one side opposite to a first lead 6 side, and this drain electrode is connected to a Cu chip 3 on the power transistor 2. The Cu chip 3 is connected to the second lead 7 via Al wires 4. As a result, during wire bonding of the Al wires 4, it becomes possible to absorb shocks due to wire bonding by the Cu chip 3, or disperse pressure due to wire bonding by the Cu chip 3, or diffuse heat due to wire bonding by the Cu chip 3.
摘要翻译：半导体器件包括具有第一引线6，第二引线7和第三引线8的引线框架1.功率晶体管2放置在第一引线6上，功率晶体管2连接到第一引线6。功率晶体管2在与第一引线6侧相对的一侧具有漏电极，该漏电极与功率晶体管2上的Cu芯片3连接。铜芯片3通过Al线4与第二引线7连接结果，在Al线4的引线接合期间，可以吸收由于Cu芯片3的引线接合引起的冲击，或者由于Cu芯片3引起的引线键合造成的分散压力，或者由于引线接合导致的扩散热由Cu芯片3。

9. 发明授权

US08232580B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08232580B2
公开(公告)日：2012-07-31
申请号：US11889135
申请日：2007-08-09
申请人： Yoshiaki Nozaki
发明人： Yoshiaki Nozaki
IPC分类号： H01L31/0224
CPC分类号： H01L27/1443 , H01L29/2003 , H01L29/7787 , H01L31/105
摘要： A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon, and a switching element formed using the wide-bandgap semiconductor layer. The switching element is electrically connected to the photodiode so as to be on/off-controlled by a control signal from the photodiode.
摘要翻译：半导体器件包括使用硅衬底形成的光电二极管，在硅衬底上形成的带隙大于硅的宽带隙半导体层，以及使用宽带隙半导体层形成的开关元件。开关元件电连接到光电二极管，以便通过来自光电二极管的控制信号进行开/关控制。

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