专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08766275B2 Composite semiconductor device 有权
标题翻译：复合半导体器件
公开(公告)号：US08766275B2
公开(公告)日：2014-07-01
申请号：US13574993
申请日：2010-12-28
申请人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
发明人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
IPC分类号： H01L31/0256
CPC分类号： H01L27/0605 , H01L27/0629
摘要： This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.
摘要翻译：该复合半导体器件具有在第一和第二端子之间串联连接的常开第一场效应晶体管和常关第二场效应晶体管，第一和第二场效应晶体管的栅极分别连接到第二和第三端子，并且N个二极管在第二场效应晶体管的漏极和源极之间沿正向串联连接。因此，第二场效应晶体管的漏极 - 源极电压（Vds）可以被限制在不高于第二场效应晶体管的耐受电压的电压。

2. 发明授权

US5216538A Electric-signal amplifying device using light transmission 失效
标题翻译：使用光传输的电信号放大装置
公开(公告)号：US5216538A
公开(公告)日：1993-06-01
申请号：US731787
申请日：1991-07-18
申请人： John K. Twynam
发明人： John K. Twynam
IPC分类号： H01L31/12 , H01L31/11 , H01L31/18
CPC分类号： H01L31/184 , H01L31/11 , Y02B10/10 , Y02E10/544
摘要： An electric-signal amplifying device is provided which includes a light source and an opto-electronic element for amplifying an input signal by use of light emitted from the light source. The opto-electronic element includes a semiconductor substrate and a multi-layered structure disposed thereon. The multi-layered structure has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semi-conductor layer of the first conductivity type in this order. The second and third semiconductor layers form a first p-n junction for modulating the amount of light to be absorbed thereinto with a change of bias voltage applied thereto in accordance with the input signal, while the first and second semiconductor layers form a second p-n junction for generating a current as an amplified output signal by absorption of the light transmitted through the first p-n junction. According to the electric-signal amplifying device of this invention, it is possible to amplify an electric signal at a very high speed because minority carriers are not used and the device has a simple structure.
摘要翻译：提供了一种电信号放大装置，其包括光源和用于通过使用从光源发射的光来放大输入信号的光电元件。光电元件包括半导体衬底和设置在其上的多层结构。多层结构具有第一导电类型的第一半导体层，第二导电类型的第二半导体层和第一导电类型的第三半导体层。第二和第三半导体层形成第一pn结，用于根据输入信号随着施加到其上的偏置电压的变化来调制要吸收的光量，同时第一和第二半导体层形成第二pn结，用于产生作为通过吸收透过第一pn结的光的放大输出信号的电流。根据本发明的电信号放大装置，可以以非常高的速度放大电信号，因为不使用少数载流子并且该装置具有简单的结构。

3. 发明申请

US20120292635A1 COMPOSITE SEMICONDUCTOR DEVICE 有权
标题翻译：复合半导体器件
公开(公告)号：US20120292635A1
公开(公告)日：2012-11-22
申请号：US13574993
申请日：2010-12-28
申请人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
发明人： Naoyasu Iketani , Tomohiro Nozawa , Yoshiaki Nozaki , John K. Twynam , Hiroshi Kawamura , Keiichi Sakuno
IPC分类号： H01L29/20
CPC分类号： H01L27/0605 , H01L27/0629
摘要： This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.
摘要翻译：该复合半导体器件具有在第一和第二端子之间串联连接的常开第一场效应晶体管和常关第二场效应晶体管，第一和第二场效应晶体管的栅极分别连接到第二和第三端子，并且N个二极管在第二场效应晶体管的漏极和源极之间沿正向串联连接。因此，第二场效应晶体管的漏极 - 源极电压（Vds）可以被限制在不高于第二场效应晶体管的耐受电压的电压。

4. 发明授权

US5508536A Heterojunction bipolar transistor having low electron and hole concentrations in the emitter-base junction region 失效
标题翻译：在发射极 - 基极结区域具有低电子和空穴浓度的异质结双极晶体管
公开(公告)号：US5508536A
公开(公告)日：1996-04-16
申请号：US224650
申请日：1994-04-07
申请人： John K. Twynam , Katsuhiko Kishimoto , Toshiaki Kinosada
发明人： John K. Twynam , Katsuhiko Kishimoto , Toshiaki Kinosada
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/7371
摘要： The present invention provides a heterojunction bipolar transister includes: a collector layer, a base layer, an emitter layer, a transition layer formed between the base layer and the emitter layer, a collector electrode connected to the collector layer, a base electrode connected to the base layer, and an emitter electrode connected to the emitter layer, wherein the emitter layer and the transition layer are formed of a composition including elements forming the base layer and at least one element different from the elements forming the base layer, a composition of the different element in the transition layer at the emitter side is substantially equal to that of the emitter layer, a composition of the different element in the transition layer at the base side is smaller than that of the emitter side and varies abruptly towards the base layer, and the composition of the transition layer gradingly varies from the base side to the emitter side.
摘要翻译：本发明提供一种异质结双极转换器，包括：集电极层，基极层，发射极层，形成在基极层和发射极层之间的过渡层，连接到集电极层的集电极，连接到集电极层的基极基底层和连接到发射极层的发射极，其中发射极层和过渡层由包含形成基底层的元素和与形成基底层的元素不同的至少一个元素的组合物形成，在发射极侧的过渡层中的不同元素基本上等于发射极层的不同元素，基极侧的过渡层中的不同元素的组成小于发射极侧的过渡层中的不同元素的组成，并且朝向基极层突然变化，并且过渡层的组成从基极侧到发射极侧分级变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式