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1. 发明申请

US20140145214A1 SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SIC EPITAXIAL WAFER 审中-公开
标题翻译： SIC外延波形及其制造方法，以及用于生产SIC外延波形的装置
公开(公告)号：US20140145214A1
公开(公告)日：2014-05-29
申请号：US14233289
申请日：2012-07-12
申请人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose , Yoshihiko Miyasaka
发明人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose , Yoshihiko Miyasaka
IPC分类号： C30B25/16 , H01L29/16 , C30B25/12 , H01L29/34
CPC分类号： H01L21/681 , C23C16/325 , C23C16/4401 , C23C16/52 , C30B25/02 , C30B25/12 , C30B25/16 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/0262 , H01L29/1608 , H01L29/34
摘要： A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.
摘要翻译：本发明的SiC外延晶片制造方法包括：使用SIC外延晶片制造装置，在SiC单晶晶片的表面上制造包括SiC外延层的SiC外延晶片，同时将原料气体供给到室内; 并且在测量由先前制造的SiC外延晶片的SiC外延层上的室的内部部件的材料的三角形缺陷的表面密度测量后制造随后的SiC外延晶片。

2. 发明申请

US20140230722A1 EPITAXIAL WAFER MANUFACTURING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：外延式制造装置和制造方法
公开(公告)号：US20140230722A1
公开(公告)日：2014-08-21
申请号：US14236272
申请日：2012-08-03
申请人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose
发明人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose
IPC分类号： C30B25/02 , C30B25/10 , C30B25/12
CPC分类号： C30B25/02 , C23C16/4401 , C30B25/10 , C30B25/12 , C30B29/36 , H01L21/02378 , H01L21/02529
摘要： An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.
摘要翻译：一种外延晶片制造装置，其包括除了可移除地附接在室内之外的屏蔽件（12），其紧邻顶板（3）的下表面布置。该屏蔽体具有在其中心部分具有开口（13）的基板（12a），其迫使气体入口（9）面向反应空间（K）的内部，并且覆盖下部的薄膜（12b）基板的表面。薄膜的表面具有对应于形成在基板的下表面中的细小表面凹凸的表面凹凸的形状。当屏蔽体被加热装置（8）加热而发生热变形时，由于表面凹凸的形状，沉积在屏蔽层下表面的沉积物被抑制掉。

3. 发明授权

US09624602B2 Epitaxial wafer manufacturing device and manufacturing method 有权
公开(公告)号：US09624602B2
公开(公告)日：2017-04-18
申请号：US14236272
申请日：2012-08-03
申请人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose
发明人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose
IPC分类号： C30B25/02 , C30B29/36 , C30B25/10 , C30B25/12 , C23C16/44 , H01L21/02
CPC分类号： C30B25/02 , C23C16/4401 , C30B25/10 , C30B25/12 , C30B29/36 , H01L21/02378 , H01L21/02529
摘要： An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

4. 发明授权

US09607832B2 Epitaxial wafer manufacturing device and manufacturing method 有权
公开(公告)号：US09607832B2
公开(公告)日：2017-03-28
申请号：US14236951
申请日：2012-08-02
申请人： Yoshiaki Kageshima , Tomoyuki Noguchi , Daisuke Muto , Kenji Momose
发明人： Yoshiaki Kageshima , Tomoyuki Noguchi , Daisuke Muto , Kenji Momose
IPC分类号： C30B25/02 , H01L21/02 , C30B29/36 , C30B25/08 , C23C16/44
CPC分类号： H01L21/02634 , C23C16/4401 , C30B25/08 , C30B29/36 , H01L21/02378 , H01L21/02529
摘要： Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).

5. 发明申请

US20140175461A1 SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME 有权
标题翻译： SIC外延波形及其制造方法
公开(公告)号：US20140175461A1
公开(公告)日：2014-06-26
申请号：US14240662
申请日：2012-09-04
申请人： Kenji Momose , Michiya Odawara , Daisuke Muto , Yoshiaki Kageshima
发明人： Kenji Momose , Michiya Odawara , Daisuke Muto , Yoshiaki Kageshima
IPC分类号： H01L21/02 , H01L29/16
CPC分类号： H01L21/02617 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02024 , H01L21/02046 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02634 , H01L21/02658 , H01L29/045 , H01L29/1608 , H01L29/32
摘要： Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial film of a prescribed thickness which is formed on a SiC single crystal substrate having an off angle, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, a step of determining an upper limit of surface density of basal plane dislocations on the growth surface of a SiC single crystal substrate used based on the above ratio, and a step of preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.
摘要翻译：提供了一种其中堆垛层错密度降低的SiC外延晶片及其制造方法。制造这种SiC外延晶片的方法包括确定基板面位错比（BPD）的步骤，其导致形成在具有偏角的SiC单晶衬底上的规定厚度的SiC外延膜中的堆垛层错存在于SiC单晶基板的生长面上的基面位错，基于上述比例确定使用的SiC单晶基板的生长面上的基面位错的表面密度的上限的步骤，以及制备具有等于或小于上述上限的表面密度的SiC单晶衬底的步骤，并且在与所述SiC单晶衬底中使用的外延膜的生长条件相同的条件下，在SiC单晶衬底上形成SiC外延膜确定比例的步骤。

6. 发明授权

US09287121B2 SIC epitaxial wafer and method for manufacturing same 有权
标题翻译： SIC外延晶片及其制造方法
公开(公告)号：US09287121B2
公开(公告)日：2016-03-15
申请号：US14240662
申请日：2012-09-04
申请人： Kenji Momose , Michiya Odawara , Daisuke Muto , Yoshiaki Kageshima
发明人： Kenji Momose , Michiya Odawara , Daisuke Muto , Yoshiaki Kageshima
IPC分类号： H01L21/02 , C30B25/20 , C30B29/36 , C30B25/18 , H01L29/32 , H01L29/16 , H01L29/04
CPC分类号： H01L21/02617 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02024 , H01L21/02046 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02634 , H01L21/02658 , H01L29/045 , H01L29/1608 , H01L29/32
摘要： A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.
摘要翻译：一种制造SiC外延晶片的方法，其中SiC外延层设置在具有偏角的SiC单晶衬底上。该方法包括确定在SiC单晶衬底的生长表面上存在的SiC外延膜中引起堆垛层错的规定厚度的基底面位错比（BPD）与基面平面位错之比，确定上限基面平面位错的表面密度，制备表面密度等于或小于上述上限的SiC单晶衬底，在与SiC外延层的生长条件相同的条件下，在SiC单晶衬底上形成SiC外延膜电影用于确定比例的步骤。

7. 发明申请

US20140190400A1 EPITAXIAL WAFER MANUFACTURING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：外延式制造装置和制造方法
公开(公告)号：US20140190400A1
公开(公告)日：2014-07-10
申请号：US14236951
申请日：2012-08-02
申请人： Yoshiaki Kageshima , Tomoyuki Noguchi , Daisuke Muto , Kenji Momose
发明人： Yoshiaki Kageshima , Tomoyuki Noguchi , Daisuke Muto , Kenji Momose
IPC分类号： H01L21/02 , C30B25/08
CPC分类号： H01L21/02634 , C23C16/4401 , C30B25/08 , C30B29/36 , H01L21/02378 , H01L21/02529
摘要： Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).
摘要翻译：提供了一种外延晶片制造装置（1），其在将原料气体供应到室中的同时，在晶片W的表面上沉积和生长外延层，其中屏蔽（12）布置成靠近顶部的下表面板（3），以防止沉积物沉积在顶板（3）的下表面上，可移除地附接在室内，在其中心部分具有迫使气体入口（9）的开口（13）面对反应空间K的内部，并且具有其周围围绕开口（13）同心地分为多个环板（16），（17）和（18）的结构。

8. 发明授权

US08823015B2 Silicon carbide epitaxial wafer and manufacturing method therefor 有权
标题翻译：碳化硅外延片及其制造方法
公开(公告)号：US08823015B2
公开(公告)日：2014-09-02
申请号：US13392348
申请日：2010-08-25
申请人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
发明人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/0684 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/1608
摘要： Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.
摘要翻译：提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。还提供了制造所述碳化硅外延晶片的方法。提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。

9. 发明申请

US20120146056A1 SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：硅碳复合材料及其制造方法
公开(公告)号：US20120146056A1
公开(公告)日：2012-06-14
申请号：US13392348
申请日：2010-08-25
申请人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
发明人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/0684 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/1608
摘要： Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.
摘要翻译：提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。还提供了制造所述碳化硅外延晶片的方法。提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。

10. 发明申请

US20120280254A1 SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译： SIC外延波形及其制造方法
公开(公告)号：US20120280254A1
公开(公告)日：2012-11-08
申请号：US13515443
申请日：2010-12-08
申请人： Daisuke Muto , Kenji Momose , Michiya Odawara
发明人： Daisuke Muto , Kenji Momose , Michiya Odawara
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： C30B29/36 , C30B25/02 , C30B25/16 , C30B25/165 , C30B25/186 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661 , H01L29/045 , H01L29/1608
摘要： According to the present invention, there is provided an SiC epitaxial wafer which reduces triangular defects and stacking faults, which is highly uniform in carrier concentration and film thickness, and which is free of step bunching, and its method of manufacture. The SiC epitaxial wafer of the present invention is an SiC epitaxial wafer in which an SiC epitaxial layer is formed on a 4H—SiC single crystal substrate that is tilted at an off angle of 0.4°-5°, wherein the density of triangular-shaped defects of said SiC epitaxial layer is 1 defect/cm2 or less.
摘要翻译：根据本发明，提供了一种减少三角形缺陷和堆垛层错的SiC外延晶片，其在载流子浓度和膜厚度上均匀，并且没有步骤聚束及其制造方法。本发明的SiC外延片是SiC外延片，在外延角为0.4°-5°的4H-SiC单晶基板上形成SiC外延层，其中三角形所述SiC外延层的缺陷为1个/ cm 2以下。

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