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1. 发明授权

US08627798B2 Direct fuel-injection engine 失效
标题翻译：直接燃油喷射发动机
公开(公告)号：US08627798B2
公开(公告)日：2014-01-14
申请号：US12620407
申请日：2009-11-17
申请人： Akihiro Yamaguchi , Yoshimasa Kaneko , Yukihisa Yamaya , Yutaka Tajima , Kenichiro Ikeya , Goichi Katayama , Nobuhiko Sasaki , Hiroshi Sono
发明人： Akihiro Yamaguchi , Yoshimasa Kaneko , Yukihisa Yamaya , Yutaka Tajima , Kenichiro Ikeya , Goichi Katayama , Nobuhiko Sasaki , Hiroshi Sono
IPC分类号： F02F3/26
CPC分类号： F02B23/0651 , F02B23/0669 , F02B23/0672 , Y02T10/125
摘要： A direct fuel-injection engine includes a piston, a cavity recessed in a central part of a top face of the piston, and a fuel injector. At a main injection collision point of a fuel-injection axis when main injection is performed while the piston is near top dead center, a main injection collision angle formed between its tangent and the fuel-injection axis is set at an obtuse angle. Fuel colliding with the main injection collision point is deflected towards a cavity open end side. At a secondary injection collision point of the fuel-injection axis when performing secondary injection with the piston is further from top dead center, a secondary injection collision angle formed between its tangent and the fuel-injection axis is set at one of a right angle and an acute angle. Fuel colliding with the secondary injection collision point is deflected primarily in the circumferential direction of the cavity.
摘要翻译：直接燃料喷射发动机包括活塞，凹入活塞顶面的中心部分的腔体和燃料喷射器。在活塞接近上死点时进行主喷射时的燃料喷射轴的主喷射碰撞点，在其切线与燃料喷射轴之间形成的主喷射碰撞角度被设定为钝角。与主喷射碰撞点碰撞的燃料朝向空腔开放端侧偏转。在与活塞进行二次注射的燃料喷射轴的二次喷射碰撞点比上止点更远的地方，在其切线和燃料喷射轴之间形成的二次喷射碰撞角度被设定为直角和一个锐角。与二次注射碰撞点碰撞的燃料主要在空腔的圆周方向上偏转。

2. 发明授权

US08418669B2 Internal combustion engine 失效
标题翻译：内燃机
公开(公告)号：US08418669B2
公开(公告)日：2013-04-16
申请号：US13024815
申请日：2011-02-10
申请人： Goichi Katayama , Yoshihiro Fujiyoshi , Yutaka Tajima , Shoichi Yamamoto
发明人： Goichi Katayama , Yoshihiro Fujiyoshi , Yutaka Tajima , Shoichi Yamamoto
IPC分类号： F02B75/06
CPC分类号： F02B67/06 , F16F15/265
摘要： In an internal combustion engine having a pair of balancer shafts (53, 54), an engine torque is transmitted from a crank gear (28) to an oil pump gear (74) on a drive shaft (73) of an oil pump (71) via a first idler gear (84) and the first balancer shaft gear (64). The engine torque is also transmitted to a fuel pump (72) from the crank gear to a fuel pump gear (78) via the first idler gear and a second idler gear (86), and to the second balancer shaft gear (67) via the first idler gear and second idler gear. Alternatively, the engine torque may be transmitted to the fuel pump from the crank gear to the fuel pump gear via the first idler gear, second balancer shaft gear and second idler gear. As the oil pump gear is actuated by the crank gear via the first idler gear, the oil pump gear is not subjected to the loading caused by the balancer shaft, and hence can be made of a compact and light-weight gear. Furthermore, this allows the various gears to be arranged in an efficient (in terms of the overall weight for the given mechanical strength requirements) and compact manner.
摘要翻译：在具有一对平衡轴（53,54）的内燃机中，发动机转矩从油泵（71）的驱动轴（73）从曲轴（28）传递到油泵齿轮（74））通过第一空转齿轮（84）和第一平衡轴轴齿轮（64）。发动机转矩也经由第一空转齿轮和第二空转齿轮（86）从曲柄齿轮传递到燃料泵（72）到燃料泵齿轮（78），并经由第二空转轴齿轮（86）经由第一个空转齿轮和第二空转齿轮。或者，发动机扭矩可以经由第一空转齿轮，第二平衡器轴齿轮和第二空转齿轮从曲柄齿轮传递到燃料泵。当油泵齿轮由曲柄齿轮通过第一空转齿轮致动时，油泵齿轮不会受到由平衡轴引起的负载，因此可以由紧凑且重量轻的齿轮制成。此外，这允许各种齿轮以有效的（在给定机械强度要求的总重量方面）和紧凑的方式布置。

3. 发明申请

US20120146056A1 SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：硅碳复合材料及其制造方法
公开(公告)号：US20120146056A1
公开(公告)日：2012-06-14
申请号：US13392348
申请日：2010-08-25
申请人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
发明人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/0684 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/1608
摘要： Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.
摘要翻译：提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。还提供了制造所述碳化硅外延晶片的方法。提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。

4. 发明授权

US07861685B2 Direct fuel injection diesel engine 失效
标题翻译：直接燃油喷射柴油机
公开(公告)号：US07861685B2
公开(公告)日：2011-01-04
申请号：US12307215
申请日：2007-06-07
申请人： Hiroshi Sono , Nobuhiko Sasaki , Tatsuya Uchimoto , Kenichiro Ikeya , Yutaka Tajima , Mitsuhiro Shibata , Yukihisa Yamaya
发明人： Hiroshi Sono , Nobuhiko Sasaki , Tatsuya Uchimoto , Kenichiro Ikeya , Yutaka Tajima , Mitsuhiro Shibata , Yukihisa Yamaya
IPC分类号： F02F3/24
CPC分类号： F02B23/0696 , F02B1/08 , F02B3/06 , F02B23/0621 , F02B23/0651 , F02B23/0657 , F02B23/0669 , F02B2275/14 , F02B2275/40 , F02F2001/241 , Y02T10/123 , Y02T10/125
摘要： In a direct fuel injection diesel engine equipped with a pentroof-shaped piston, a collision angle (α) at which fuel injected in a direction in which the height of the top face of a piston (13) is high collides with a cavity (25) is set larger than a collision angle (β) at which fuel injected in a direction in which the height of the top face of the piston (13) is low collides with the cavity (25). By so doing, in a direction in which the height of the top face is high fuel that has collided with the cavity (25) easily rebounds upward, thus achieving effective combustion by mixing with a large amount of air present in the vicinity of the opening of the cavity (25) where the height is high, and in a direction in which the height of the top face is low it is difficult for fuel that has collided with the cavity (25) to rebound upward, thus achieving effective combustion by suppressing the flowing out of fuel or flame from the opening of the cavity (25) where the height is low, thereby appropriately mixing fuel and air in all directions in the circumferential direction of the cavity and making it possible to improve the engine output and reduce harmful exhaust substances.
摘要翻译：在配备有五角柱形活塞的直接燃料喷射柴油发动机中，在活塞（13）的顶面高度与空腔（25）碰撞的方向上喷射的燃料的碰撞角（α））被设定为大于在活塞（13）的顶面的高度低的方向上喷射的燃料与空腔（25）碰撞的碰撞角（＆amp; bgr）。通过这样做，在顶面的高度与空腔（25）碰撞的高度高的方向上容易地向上弹回，从而通过与存在于开口附近的大量空气混合而实现有效的燃烧在高度高的空腔（25）中，并且在顶面高度低的方向上，与空腔（25）碰撞的燃料难以向上回弹，从而通过抑制来实现有效的燃烧从高度低的空腔（25）的开口流出燃料或火焰，从而在空腔的圆周方向上适当地混合燃料和空气在各个方向上，并且可以改善发动机的输出并减少有害的排气物质。

5. 发明申请

US20090314253A1 DIRECT FUEL INJECTION DIESEL ENGINE 失效
标题翻译：直接燃油喷射柴油发动机
公开(公告)号：US20090314253A1
公开(公告)日：2009-12-24
申请号：US12307215
申请日：2007-06-07
申请人： Hiroshi Sono , Nobuhiko Sasaki , Tatsuya Uchimoto , Kenichiro Ikeya , Yutaka Tajima , Mitsuhiro Shibata , Yukihisa Yamaya
发明人： Hiroshi Sono , Nobuhiko Sasaki , Tatsuya Uchimoto , Kenichiro Ikeya , Yutaka Tajima , Mitsuhiro Shibata , Yukihisa Yamaya
IPC分类号： F02B3/00 , F02F3/00
CPC分类号： F02B23/0696 , F02B1/08 , F02B3/06 , F02B23/0621 , F02B23/0651 , F02B23/0657 , F02B23/0669 , F02B2275/14 , F02B2275/40 , F02F2001/241 , Y02T10/123 , Y02T10/125
摘要： In a direct fuel injection diesel engine equipped with a pentroof-shaped piston, a collision angle (α) at which fuel injected in a direction in which the height of the top face of a piston (13) is high collides with a cavity (25) is set larger than a collision angle (β) at which fuel injected in a direction in which the height of the top face of the piston (13) is low collides with the cavity (25). By so doing, in a direction in which the height of the top face is high fuel that has collided with the cavity (25) easily rebounds upward, thus achieving effective combustion by mixing with a large amount of air present in the vicinity of the opening of the cavity (25) where the height is high, and in a direction in which the height of the top face is low it is difficult for fuel that has collided with the cavity (25) to rebound upward, thus achieving effective combustion by suppressing the flowing out of fuel or flame from the opening of the cavity (25) where the height is low, thereby appropriately mixing fuel and air in all directions in the circumferential direction of the cavity and making it possible to improve the engine output and reduce harmful exhaust substances.
摘要翻译：在配备有五角形活塞的直接燃料喷射柴油发动机中，在活塞（13）的顶面的高度高的方向上喷射的燃料与空腔（25）碰撞的碰撞角（α））设定为大于在活塞（13）的顶面的高度低的方向上喷射的燃料与空腔（25）碰撞的碰撞角（β）。通过这样做，在顶面的高度与空腔（25）碰撞的高度高的方向上容易地向上弹回，从而通过与存在于开口附近的大量空气混合而实现有效的燃烧在高度高的空腔（25）中，并且在顶面高度低的方向上，与空腔（25）碰撞的燃料难以向上回弹，从而通过抑制来实现有效的燃烧从高度低的空腔（25）的开口流出燃料或火焰，从而在空腔的圆周方向上适当地混合燃料和空气在各个方向上，并且可以改善发动机的输出并减少有害的排气物质。

6. 发明授权

US06919081B1 Lak activity potentiator orginating in shitake mushroom hyphae extract and lak activity potentiating preparations containing the same 失效
标题翻译： Lak活性增强剂在shitake蘑菇菌丝提取物和舔活动增强剂含有相同的
公开(公告)号：US06919081B1
公开(公告)日：2005-07-19
申请号：US09856718
申请日：1999-11-26
申请人： Kenji Asano , Yukiko Matsuda , Yutaka Tajima
发明人： Kenji Asano , Yukiko Matsuda , Yutaka Tajima
IPC分类号： A23L1/28 , A61K39/39 , A61P35/00 , A61P37/04 , A61K35/78
CPC分类号： A61K36/07 , A23L5/00 , A23L31/00 , A23V2002/00 , A61K39/39 , A61K2039/55588 , A23V2250/208
摘要： It is an object of the present invention to provide immunopotentiators and immunotherapeutic formulations available at low cost and having a benign side effect profile. According to the present invention, an LAK activity enhancer containing an extract of Lentinus edodes mycelium and an LAK activity-enhancing formulation containing said enhancer are provided.
摘要翻译：本发明的目的是提供以低成本获得并具有良性副作用特征的免疫增强剂和免疫治疗剂。根据本发明，提供了含有香菇提取物的LAK活性增强剂和含有所述增强子的LAK活性增强制剂。

7. 发明授权

US08823015B2 Silicon carbide epitaxial wafer and manufacturing method therefor 有权
标题翻译：碳化硅外延片及其制造方法
公开(公告)号：US08823015B2
公开(公告)日：2014-09-02
申请号：US13392348
申请日：2010-08-25
申请人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
发明人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/0684 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/1608
摘要： Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.
摘要翻译：提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。还提供了制造所述碳化硅外延晶片的方法。提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。

8. 发明申请

US20100186709A1 DIRECT FUEL INJECTION DIESEL ENGINE 失效
标题翻译：直接燃油喷射柴油发动机
公开(公告)号：US20100186709A1
公开(公告)日：2010-07-29
申请号：US12305880
申请日：2007-04-11
申请人： Kenichiro Ikeya , Yukihisa Yamaya , Nobuhiko Sasaki , Tatsuya Uchimoto , Yutaka Tajima , Mitsuhiro Shibata , Hiroshi Sono
发明人： Kenichiro Ikeya , Yukihisa Yamaya , Nobuhiko Sasaki , Tatsuya Uchimoto , Yutaka Tajima , Mitsuhiro Shibata , Hiroshi Sono
IPC分类号： F02F3/24 , F02F3/00
CPC分类号： F02F3/26 , F02B3/06 , F02B23/0651 , F02B23/0657 , F02B23/0669 , F02B23/0696 , F02B2275/14 , F02F2001/241 , Y02T10/123 , Y02T10/125
摘要： In a direct fuel injection diesel engine equipped with a pentroof-shaped piston, when fuel is injected into a cavity (25) recessed in a central part of a piston (13), for which the height of a top face changes in the circumferential direction, from a fuel injection point (Oinj) of a fuel injector disposed on a piston central axis along a plurality of fuel injection axes (Li1,Li2), if a cross-section of the cavity (25) passing along the fuel injection axis (Li1,Li2) is defined as a fuel injection cross-section (Sn), a cross-sectional shape (see shaded portion) of the cavity (25) defined by first to third specific points (An, Bn, Cn) on the fuel injection cross-section (Sn) is set so as to be substantially equal for each fuel injection cross-section (Sn). By so doing, the conditions in which fuel and air are mixed in each fuel injection cross-section (Sn) can be made uniform, the engine output can be improved, and harmful exhaust substances can be reduced.
摘要翻译：在配备有五角柱形活塞的直接燃料喷射式柴油发动机中，当将燃料喷射到凹陷在活塞（13）的中心部分的空腔（25）中时，顶面的高度在圆周方向上变化，如果沿着燃料喷射轴线（25）通过的空腔（25）的横截面，则沿着多个燃料喷射轴线（Li1，Li2）从设置在活塞中心轴线上的燃料喷射器的燃料喷射点（Oinj） Li1，Li2）定义为燃料喷射截面（Sn），由燃料上的第一至第三特定点（An，Bn，Cn）限定的空腔（25）的横截面形状（参见阴影部分）喷射截面（Sn）被设定为对于每个燃料喷射截面（Sn）基本相等。通过这样做，能够使各燃料喷射截面（Sn）中的燃料和空气混合的条件均匀，能够提高发动机输出，能够降低有害排气物质。

9. 发明申请

US20100006061A1 DIRECT FUEL INJECTION DIESEL ENGINE 失效
标题翻译：直接燃油喷射柴油发动机
公开(公告)号：US20100006061A1
公开(公告)日：2010-01-14
申请号：US12305342
申请日：2007-04-11
申请人： Mitsuhiro Shibata , Hiroshi Sono , Nobuhiko Sasaki , Tatsuya Uchimoto , Kenichiro Ikeya , Yutaka Tajima , Yukihisa Yamaya
发明人： Mitsuhiro Shibata , Hiroshi Sono , Nobuhiko Sasaki , Tatsuya Uchimoto , Kenichiro Ikeya , Yutaka Tajima , Yukihisa Yamaya
IPC分类号： F02F3/24 , F02B23/00
CPC分类号： F02B23/0696 , F02B3/06 , F02B23/0621 , F02B23/0657 , F02B23/0669 , F02B2275/14 , F02F1/242 , Y02T10/123 , Y02T10/125
摘要： In a direct fuel injection diesel engine having a piston with a pentroof-shaped top face, with regard to a pentroof-shaped piston (13) with a cavity (25) recessed in a central part of the top face, a radial width S of a squish area (26) formed between an outer peripheral part of the top face and a lower face of a cylinder head (14) changes in the circumferential direction of the piston (13). By setting a squish clearance H large for a portion where the radial width S of the squish area (26) is large and setting the squish clearance H small for a portion where the radial width S of the squish area (26) is small, more specifically, by setting S/H so that it is constant in the circumferential direction, it is possible to make the strength of the squish flow uniform in the circumferential direction of the piston, thus promoting the mixing of air and fuel and reducing harmful exhaust components.
摘要翻译：在具有具有五角形顶面的活塞的直接燃料喷射柴油发动机中，相对于具有在顶面的中心部分凹陷的空腔（25）的五角形活塞（13），径向宽度S为在顶面的外周部和气缸盖（14）的下面之间形成的挤压区域（26）沿活塞（13）的周向发生变化。通过对挤压区域（26）的径向宽度S大的部分设定较大的挤压间隙H，并且对于挤压区域（26）的径向宽度S小的部分设定挤压间隙H较小，具体地说，通过将S / H设定为在圆周方向上恒定，可以使挤压流的强度在活塞的圆周方向上均匀，从而促进空气和燃料的混合以及减少有害排气成分。

10. 发明授权

US5969391A Complementary insulated-gate field-effect transistors having improved anti-latchup characteristic 失效
标题翻译：具有改进的抗闭锁特性的互补绝缘栅场效应晶体管
公开(公告)号：US5969391A
公开(公告)日：1999-10-19
申请号：US867764
申请日：1997-06-03
申请人： Yutaka Tajima
发明人： Yutaka Tajima
IPC分类号： H01L29/78 , H01L21/8238 , H01L27/092 , H01L29/76 , H01L23/62 , H01L29/94 , H01L31/062
CPC分类号： H01L27/0921 , H01L2924/0002
摘要： A semiconductor device includes an N-well arranged in the principal surface of a P-type semiconductor substrate, an N.sup.+ well contact arranged in the principal surface of the N-well, and an N.sup.+ buried region arranged to the bottom of the N-well.
摘要翻译：半导体器件包括布置在P型半导体衬底的主表面上的N阱，布置在N阱的主表面中的N +阱触点和布置在N阱的底部的N +掩埋区。

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