专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09829983B2 Mobile systems including image sensors, methods of operating image sensors, and methods of operating mobile systems 有权
公开(公告)号：US09829983B2
公开(公告)日：2017-11-28
申请号：US14061036
申请日：2013-10-23
申请人： Yoon-Dong Park , Won-Joo Kim , Young-Gu Jin , Dong-Wook Kwon , Kyung-Il Kim , Min-Ho Kim , Gi-Sang Lee , Sang-Bo Lee , Jin-Kyung Lee , Jin-Wuk Choi
发明人： Yoon-Dong Park , Won-Joo Kim , Young-Gu Jin , Dong-Wook Kwon , Kyung-Il Kim , Min-Ho Kim , Gi-Sang Lee , Sang-Bo Lee , Jin-Kyung Lee , Jin-Wuk Choi
IPC分类号： G09G5/00 , G06F3/01 , G06F3/041 , G06F1/32
CPC分类号： G06F3/017 , G06F1/3262 , G06F3/011 , G06F3/0416 , G06F2203/04101 , G06F2203/04106
摘要： A mobile system may comprise a three-dimensional (3D) image sensor on a first surface of the mobile system configured to perform a first sensing to detect proximity of a subject and a second sensing to recognize a gesture of the subject by acquiring distance information for the subject; and/or a display device on the first surface of the mobile system to display results of the first sensing and the second sensing. A mobile system may comprise a light source unit; a plurality of depth pixels; and/or a plurality of color pixels. The light source unit, the plurality of depth pixels, or the plurality of color pixels may be activated based on an operation mode of the mobile system.

2. 发明申请

US20100320515A1 High sensitivity image sensors and methods of operating the same 有权
标题翻译：高灵敏度图像传感器及其操作方法
公开(公告)号：US20100320515A1
公开(公告)日：2010-12-23
申请号：US12662327
申请日：2010-04-12
申请人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
发明人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
IPC分类号： H01L27/146
CPC分类号： H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要： A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.)
摘要翻译：包括像素的高灵敏度图像传感器，包括单电子场效应晶体管（SEFET）的像素，在第二导电型衬底中包括第一导电类型阱的SEFET，以及阱中的第二导电类型源极和漏极区域在源极和漏极区域之间的阱中的导电型栅极区）。

3. 发明申请

US20110019049A1 PHOTO DETECTING APPARATUS AND UNIT PIXEL THEREOF 有权
标题翻译：照片检测装置及其像素
公开(公告)号：US20110019049A1
公开(公告)日：2011-01-27
申请号：US12844381
申请日：2010-07-27
申请人： Young Gu Jin , Kwan-Young Oh , Samuel Sungmok Lee , Kwang-Chol Choe , Se-Won Seo , Yoon-Dong Park , Eric Fossum , Kyoung-Lae Cho
发明人： Young Gu Jin , Kwan-Young Oh , Samuel Sungmok Lee , Kwang-Chol Choe , Se-Won Seo , Yoon-Dong Park , Eric Fossum , Kyoung-Lae Cho
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/14609 , G01S7/4863 , H01L27/14643 , H04N5/335 , H04N5/3741 , H04N5/378
摘要： A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate.
摘要翻译：光检测装置的单位像素包括光栅，传输门和浮动扩散区。光栅包括沿第一方向延伸的接合栅极和从基本上垂直于第一方向的第二方向从接合栅极延伸的多个指状栅极。传输门形成在接合栅极附近。浮动扩散区域形成为与第一传输门相邻。

4. 发明授权

US08803273B2 High sensitivity image sensors 有权
标题翻译：高灵敏度图像传感器
公开(公告)号：US08803273B2
公开(公告)日：2014-08-12
申请号：US14022826
申请日：2013-09-10
申请人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
发明人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
IPC分类号： H01L31/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/739
CPC分类号： H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要： A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.
摘要翻译：包括像素的高灵敏度图像传感器，包括单电子场效应晶体管（SEFET）的像素，在第二导电型衬底中包括第一导电类型阱的SEFET，以及阱中的第二导电类型源极和漏极区域在源极和漏极区域之间的阱中的导电型栅极区域。

5. 发明授权

US08581964B2 Three-dimensional image sensors and methods of manufacturing the same 有权
标题翻译：三维图像传感器及其制造方法
公开(公告)号：US08581964B2
公开(公告)日：2013-11-12
申请号：US12905458
申请日：2010-10-15
申请人： Sang-Chul Sul , Won-Cheol Jung , Yoon-Dong Park , Myung-Bok Lee , Young-Gu Jin
发明人： Sang-Chul Sul , Won-Cheol Jung , Yoon-Dong Park , Myung-Bok Lee , Young-Gu Jin
IPC分类号： H04N7/18
CPC分类号： H01L31/02162 , H01L27/14603 , H01L27/14621 , H01L27/14645 , H04N13/254
摘要： Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light.
摘要翻译：图像传感器包括其中具有传感器像素阵列的三维（3D）彩色图像传感器。 3-D彩色图像传感器可以包括具有多个颜色传感器和其中的深度传感器的3-D图像传感器像素。多个颜色传感器可以包括邻近深度传感器延伸的红色，绿色和蓝色传感器。还提供了一个拒收过滤器。与3-D图像传感器像素的光接收表面相对延伸的该拒绝滤光器被配置为相对于远红外光对可见光和近红外光选择性地透明。深度传感器还可以包括对于相对于可见光具有大于约700nm的波长的近红外光选择性透明的红外滤光器。

6. 发明申请

US20110074989A1 IMAGE SENSORS 有权
标题翻译：图像传感器
公开(公告)号：US20110074989A1
公开(公告)日：2011-03-31
申请号：US12887258
申请日：2010-09-21
申请人： Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
发明人： Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
摘要： Provided is an image sensor having a depth sensor. The image sensor includes a substrate including a visible light region and a non-visible light region, a first well and a second well having a first conductivity type and in the non-visible light perception region, and a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively.
摘要翻译：具有深度传感器的图像传感器。图像传感器包括：包括可见光区域和不可见光区域的基板，具有第一导电类型的第一阱和第二阱以及不可见光感知区域中的第一栅极和第二栅极配置分别接收相位相的电压，并分别向第一阱和第二阱施加电压。

7. 发明授权

US07507674B2 Memory device including resistance change layer as storage node and method(s) for making the same 有权
标题翻译：存储器件包括作为存储节点的电阻变化层及其制造方法
公开(公告)号：US07507674B2
公开(公告)日：2009-03-24
申请号：US11270565
申请日：2005-11-10
申请人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
发明人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
IPC分类号： H01L21/461
CPC分类号： H01L27/24 , Y10S438/947
摘要： A method for manufacturing a memory device including a resistance change layer as a storage node according to example embodiment(s) of the present invention and a memory device made by the method(s) are provided. Pursuant to example embodiments of the present invention, the method may include stacking (sequentially or otherwise) a conductive material layer, a diode layer and a data storage layer on a bottom layer, forming a first material layer on the data storage layer, forming a first hole exposing the data storage layer in the first material layer, forming a first spacer with a second material layer on the sidewall of the first hole, filling the first hole with a third material layer and covering the first spacer; removing the first material layer, forming a second spacer with a fourth material layer on the sidewall of the first spacer; removing the third material layer, and forming a second hole exposing the bottom layer in a first stack structure using the first and second spacers as a mask. These operations may result in the formation of bit lines and word lines as described.
摘要翻译：提供一种用于制造包括根据本发明的示例性实施例的作为存储节点的电阻变化层的存储器件的方法和由该方法制造的存储器件。根据本发明的示例性实施例，该方法可以包括在底层上层叠（顺序地或以其他方式）导电材料层，二极管层和数据存储层，在数据存储层上形成第一材料层，形成第一孔暴露第一材料层中的数据存储层，在第一孔的侧壁上形成具有第二材料层的第一间隔物，用第三材料层填充第一孔并覆盖第一间隔物; 去除所述第一材料层，在所述第一间隔物的侧壁上形成具有第四材料层的第二间隔物; 去除第三材料层，并且使用第一和第二间隔件作为掩模，形成以第一堆叠结构暴露底层的第二孔。这些操作可能导致如所描述的位线和字线的形成。

8. 发明申请

US20070222036A1 Semiconductor memory device and methods of manufacturing and operating the same 有权
标题翻译：半导体存储器件及其制造和操作方法
公开(公告)号：US20070222036A1
公开(公告)日：2007-09-27
申请号：US11723490
申请日：2007-03-20
申请人： Yoon-Dong Park , Suk-PiI Kim , Won-Joo Kim
发明人： Yoon-Dong Park , Suk-PiI Kim , Won-Joo Kim
IPC分类号： H01L29/06
CPC分类号： H01L27/105 , H01L27/101 , H01L27/1052 , H01L27/10876 , H01L27/10879 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L27/1159 , H01L27/24 , H01L29/785
摘要： A semiconductor memory device and methods of manufacturing and operating the same may be provided. The semiconductor memory device may include a substrate, at least a pair of fins protruding from the semiconductor substrate and facing each other with a gap between fins of the pair of fins, an insulating layer formed between the pair of the fins, a storage node formed on the pair of fins and/or a surface of a portion of the insulating layer, and/or a gate electrode formed on the storage node.
摘要翻译：可以提供半导体存储器件及其制造和操作的方法。半导体存储器件可以包括基板，至少一对翅片，其从半导体基板突出并且彼此面对，具有在所述一对翅片的翅片之间的间隙;形成在所述一对翅片之间的绝缘层，形成的存储节点在所述一对翅片和/或所述绝缘层的一部分的表面上，和/或形成在所述存储节点上的栅电极。

9. 发明申请

US20060110877A1 Memory device including resistance change layer as storage node and method(s) for making the same 有权
公开(公告)号：US20060110877A1
公开(公告)日：2006-05-25
申请号：US11270565
申请日：2005-11-10
申请人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
发明人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
IPC分类号： H01L21/8244
CPC分类号： H01L27/24 , Y10S438/947
摘要： A method for manufacturing a memory device including a resistance change layer as a storage node according to example embodiment(s) of the present invention and a memory device made by the method(s) are provided. Pursuant to example embodiments of the present invention, the method may include stacking (sequentially or otherwise) a conductive material layer, a diode layer and a data storage layer on a bottom layer, forming a first material layer on the data storage layer, forming a first hole exposing the data storage layer in the first material layer, forming a first spacer with a second material layer on the sidewall of the first hole, filling the first hole with a third material layer and covering the first spacer; removing the first material layer, forming a second spacer with a fourth material layer on the sidewall of the first spacer; removing the third material layer, and forming a second hole exposing the bottom layer in a first stack structure using the first and second spacers as a mask. These operations may result in the formation of bit lines and word lines as described.

10. 发明授权

US08835826B2 Pixel Circuit, depth sensor having dual operating mode for high and low incident light and operating method 有权
标题翻译：像素电路，深度传感器具有双重工作模式，用于高低入射光和操作方法
公开(公告)号：US08835826B2
公开(公告)日：2014-09-16
申请号：US13611607
申请日：2012-09-12
申请人： Yong-Jei Lee , Yoon-Dong Park , Young-Gu Jin
发明人： Yong-Jei Lee , Yoon-Dong Park , Young-Gu Jin
IPC分类号： H01L27/00 , G01J1/02 , G01S17/89 , G01J1/18 , G01J1/44 , G01S7/491 , H04N5/369
CPC分类号： G01J1/44 , G01J1/0228 , G01J1/18 , G01S7/4914 , G01S17/89 , H04N5/3696
摘要： A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.
摘要翻译：用于在第一操作模式（高入射光强度）或第二操作模式（低入射光强度）中的检测周期和输出周期中操作的深度传感器的像素电路。像素电路包括响应于入射光而产生电荷的光接收单元，信号生成单元响应于在检测周期期间的发送信号，复位信号和选择信号在FDN中累积电荷，并且生成具有对应于在输出周期期间在FDN处显现的电压的电平，以及耦合在电源电压和光接收单元之间的刷新晶体管，并且响应于刷新信号将电荷放电到电源电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式