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1. 发明授权

US08395934B2 Phase-change memory device 有权
标题翻译：相变存储器件
公开(公告)号：US08395934B2
公开(公告)日：2013-03-12
申请号：US12828122
申请日：2010-06-30
申请人： Yoon Jae Shin
发明人： Yoon Jae Shin
IPC分类号： G11C11/21
CPC分类号： G11C5/14 , G11C13/0004 , G11C13/0038 , G11C13/004 , G11C13/0061
摘要： A phase-change memory device includes: a cell array including at least one unit cell; a current sensing unit sensing data stored in the at least one unit cell; and a power generation circuit supplying a power source voltage to the current sensing unit, in which the power generation circuit is activated while the current sensing unit is performing a sensing operation.
摘要翻译：相变存储器件包括：包括至少一个单元的单元阵列; 感测存储在所述至少一个单位单元中的数据的电流感测单元; 以及向电流感测单元供给电源电压的发电电路，其中在电流感测单元正在进行感测操作时，发电电路被激活。

2. 发明申请

US20070285142A1 Apparatus for supplying voltage free from noise and method of operation the same 失效
标题翻译：用于提供无噪声电压的装置及其操作方法
公开(公告)号：US20070285142A1
公开(公告)日：2007-12-13
申请号：US11647486
申请日：2006-12-29
申请人： Yoon Jae Shin , Jun Gi Choi
发明人： Yoon Jae Shin , Jun Gi Choi
IPC分类号： H03K3/356
CPC分类号： H03K17/145 , H03K19/00384 , Y10T307/696
摘要： A voltage supply apparatus includes a power noise sensing unit, a voltage selecting unit, a first power voltage supply unit and a second power voltage supply unit. The power noise sensing unit senses noise from first and second powers and outputs a power noise sensing signal. The voltage selecting unit outputs first and second driving signals in response to a voltage-supply-enable-signal and the power noise sensing signal. The first power voltage supply unit applies a voltage of the first power in response to the first and second driving signals. The second power voltage supply unit applies a voltage of the second power in response to the first and second driving signals.
摘要翻译：电压供给装置包括电源噪声检测单元，电压选择单元，第一电源电压单元和第二电源电压单元。功率噪声感测单元感测来自第一和第二功率的噪声，并输出功率噪声感测信号。电压选择单元响应于电压供应使能信号和功率噪声感测信号输出第一和第二驱动信号。第一电源电压单元响应于第一和第二驱动信号施加第一功率的电压。第二电源电压单元响应于第一和第二驱动信号施加第二功率的电压。

3. 发明授权

US08526226B2 Current control apparatus and phase change memory having the same 有权
标题翻译：电流控制装置和相变存储器
公开(公告)号：US08526226B2
公开(公告)日：2013-09-03
申请号：US12983244
申请日：2010-12-31
申请人： Sang Kug Lym , Yoon Jae Shin
发明人： Sang Kug Lym , Yoon Jae Shin
IPC分类号： G11C11/00
CPC分类号： G11C13/0038 , G11C7/04 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： A current control apparatus of a phase change memory includes a temperature sensing block having an output voltage level which varies depending on temperature of an internal circuit and a write driver configured to control an amount of program current provided to a memory cell in response to the output voltage level of the temperature sensing block.
摘要翻译：相变存储器的电流控制装置包括具有根据内部电路的温度变化的输出电压电平的温度感测块和被配置为响应于输出而控制提供给存储器单元的编程电流量的写入驱动器温度传感块的电压电平。

4. 发明授权

US08283971B2 Internal voltage generation circuit and semiconductor apparatus using the same 有权
标题翻译：内部电压产生电路及使用其的半导体装置
公开(公告)号：US08283971B2
公开(公告)日：2012-10-09
申请号：US12983148
申请日：2010-12-31
申请人： Yoon Jae Shin
发明人： Yoon Jae Shin
IPC分类号： G05F1/10
CPC分类号： G11C5/145
摘要： An internal voltage generation circuit includes a voltage detection unit configured to generate a voltage detection signal that indicates whether a voltage level of an internal voltage is a first target voltage level or a second target voltage level higher than the first target voltage level, according to control of a normal operation signal. The internal voltage generation circuit also includes an operation control signal generation unit configured to selectively activate an operation control signal in response to the normal operation signal and the voltage detection signal, a periodic pulse signal generation unit configured to generate a periodic pulse signal in response to the operation control signal and the normal operation signal, and a charge pumping unit configured to generate an internal voltage by performing a charge pumping operation according to control of the periodic pulse signal.
摘要翻译：内部电压产生电路包括：电压检测单元，被配置为根据控制产生指示内部电压的电压电平是否是第一目标电压电平还是比第一目标电压电平高的第二目标电压电平的电压检测信号的正常操作信号。内部电压产生电路还包括：操作控制信号生成单元，被配置为响应于正常操作信号和电压检测信号选择性地激活操作控制信号;周期性脉冲信号生成单元，被配置为响应于操作控制信号和正常操作信号;以及电荷泵送单元，被配置为通过根据周期脉冲信号的控制执行电荷泵送操作来产生内部电压。

5. 发明授权

US08345495B2 Test circuit, nonvolatile semiconductor memory appratus using the same, and test method 有权
标题翻译：测试电路，使用相同的非易失性半导体存储器，以及测试方法
公开(公告)号：US08345495B2
公开(公告)日：2013-01-01
申请号：US12845659
申请日：2010-07-28
申请人： Jung Hyuk Yoon , Yoon Jae Shin
发明人： Jung Hyuk Yoon , Yoon Jae Shin
IPC分类号： G11C29/00
CPC分类号： G11C29/02 , G11C29/021 , G11C29/026
摘要： A test circuit of a nonvolatile semiconductor memory apparatus includes a first switching unit, a second switching unit, and a third switching unit. The first switching unit is configured to selectively interrupt application of a pumping voltage for a sense amplifier to a sense amplifier input node. The second switching unit is configured to selectively decouple the sense amplifier input node and a sub input/output node. The sub input/output node is coupled with a data storage region. The third switching unit is configured to selectively connect a voltage applying pad and the sense amplifier input node.
摘要翻译：非易失性半导体存储装置的测试电路包括第一开关单元，第二开关单元和第三开关单元。第一开关单元被配置为选择性地中断将感测放大器的泵浦电压施加到感测放大器输入节点。第二开关单元被配置为选择性地去耦合感测放大器输入节点和子输入/输出节点。子输入/输出节点与数据存储区域耦合。第三开关单元被配置为选择性地连接电压施加垫和读出放大器输入节点。

6. 发明授权

US08194473B2 Non-volatile semiconductor memory circuit 有权
标题翻译：非易失性半导体存储器电路
公开(公告)号：US08194473B2
公开(公告)日：2012-06-05
申请号：US12494555
申请日：2009-06-30
申请人： Yoon Jae Shin , Dong Keun Kim
发明人： Yoon Jae Shin , Dong Keun Kim
IPC分类号： G11C7/06
CPC分类号： G11C5/147 , G11C7/1006 , G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C13/0064 , G11C13/0069
摘要： A non-volatile semiconductor memory circuit includes a memory cell array, and a verification sense amplifier controller configured to control switching devices, which receive external input data, depending on a level of the input data such that distribution voltage is changed when controlling a write operation by comparing the input data with cell data written in the memory cell array so as to provide cell data.
摘要翻译：非易失性半导体存储器电路包括存储单元阵列，以及验证感测放大器控制器，被配置为根据输入数据的电平来控制接收外部输入数据的开关器件，使得当控制写入操作时分配电压发生变化通过将输入数据与写入存储单元阵列中的单元数据进行比较，以提供单元数据。

7. 发明授权

US08879339B2 Write control device 有权
标题翻译：写控制装置
公开(公告)号：US08879339B2
公开(公告)日：2014-11-04
申请号：US13592265
申请日：2012-08-22
申请人： Byoung Chan Oh , Yoon Jae Shin
发明人： Byoung Chan Oh , Yoon Jae Shin
IPC分类号： G11C7/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0038 , G11C13/0061 , G11C2013/0092
摘要： A write control device includes a switching unit configured to selectively supply a write current in response to a driving control signal, a driving unit configured to supply a driving current to a memory cell corresponding to the write current applied through the switching unit, and an over-driving control unit coupled to an output node of the driving unit and configured to over-drive the output node in response to the driving control signal.
摘要翻译：写控制装置包括：开关单元，被配置为响应于驱动控制信号选择性地提供写入电流;驱动单元，被配置为向与通过开关单元施加的写入电流相对应的存储单元提供驱动电流，驱动控制单元耦合到所述驱动单元的输出节点并且被配置为响应于所述驱动控制信号而过驱动所述输出节点。

8. 发明授权

US08717830B2 Nonvolatile semiconductor device and method for testing the same 有权
标题翻译：非易失性半导体器件及其测试方法
公开(公告)号：US08717830B2
公开(公告)日：2014-05-06
申请号：US13550842
申请日：2012-07-17
申请人： Sang Kug Lym , Yoon Jae Shin
发明人： Sang Kug Lym , Yoon Jae Shin
IPC分类号： G11C7/00
CPC分类号： G11C29/021 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A nonvolatile semiconductor device and a method for testing the same are provided. The nonvolatile semiconductor device includes a current generating unit configured to generate a set write current depending on a step pulse that is generated based on a reference current and output the set write current to a memory cell, and a current measuring unit configured to measure a step duration of the step pulse and output a measured result outside of a chip during an activation period of a test enable signal.
摘要翻译：提供了一种非易失性半导体器件及其测试方法。非易失性半导体器件包括：电流产生单元，被配置为根据基于参考电流产生的步进脉冲产生设定的写入电流，并将设置的写入电流输出到存储单元;以及电流测量单元，被配置为测量步骤在测试使能信号的激活期间，输出步进脉冲的持续时间，并输出芯片外的测定结果。

9. 发明申请

US20110292719A1 PHASE-CHANGE MEMORY DEVICE 有权
标题翻译：相变存储器件
公开(公告)号：US20110292719A1
公开(公告)日：2011-12-01
申请号：US12828122
申请日：2010-06-30
申请人： Yoon Jae Shin
发明人： Yoon Jae Shin
IPC分类号： G11C11/21
CPC分类号： G11C5/14 , G11C13/0004 , G11C13/0038 , G11C13/004 , G11C13/0061
摘要： A phase-change memory device includes: a cell array including at least one unit cell; a current sensing unit sensing data stored in the at least one unit cell; and a power generation circuit supplying a power source voltage to the current sensing unit, in which the power generation circuit is activated while the current sensing unit is performing a sensing operation.
摘要翻译：相变存储器件包括：包括至少一个单元的单元阵列; 感测存储在所述至少一个单位单元中的数据的电流感测单元; 以及向电流感测单元供给电源电压的发电电路，其中在电流感测单元正在进行感测操作时，发电电路被激活。

10. 发明授权

US08791684B2 Reference voltage generator 有权
标题翻译：参考电压发生器
公开(公告)号：US08791684B2
公开(公告)日：2014-07-29
申请号：US13551000
申请日：2012-07-17
申请人： Sang Kug Lym , Yoon Jae Shin
发明人： Sang Kug Lym , Yoon Jae Shin
IPC分类号： G05F3/16
CPC分类号： G05F3/30
摘要： A reference voltage generator generates a reference voltage having a stable voltage level insensitive to a temperature variation. A reference voltage generator includes a current generating unit configured to generate a reference current proportional to temperature increase, a voltage adjusting unit configured to adjust a reference voltage corresponding to a current level of the reference current, and a start-up driving unit configured to drive and amplify the reference voltage while the voltage adjusting unit operates.
摘要翻译：参考电压发生器产生具有对温度变化不敏感的稳定电压电平的参考电压。参考电压发生器包括：电流产生单元，被配置为产生与温度升高成比例的参考电流;电压调节单元，被配置为调整与参考电流的当前电平相对应的参考电压;以及启动驱动单元，被配置为驱动并在电压调节单元工作时放大参考电压。

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