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1. 发明授权

US08431331B2 Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion 有权
标题翻译：通过使用酸扩散的双重图案化工艺形成半导体器件精细图案的方法
公开(公告)号：US08431331B2
公开(公告)日：2013-04-30
申请号：US12267687
申请日：2008-11-10
申请人： Yool Kang , Suk-joo Lee , Jung-hyeon Lee , Shi-yong Yi
发明人： Yool Kang , Suk-joo Lee , Jung-hyeon Lee , Shi-yong Yi
IPC分类号： G03F7/40
CPC分类号： H01L21/027 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0338 , H01L21/32139
摘要： A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.
摘要翻译：提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。在该方法中，在基板上形成多个第一掩模图案以彼此分离。在多个第一掩模图案的每一个的侧壁和上表面上形成包括酸源的封盖膜。在封盖膜上形成第二掩模层。通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留在第一间隙中的第二掩模层的残留部分形成。

2. 发明申请

US20090274980A1 METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION 有权
标题翻译：通过使用双酸性方法形成半导体器件的精细图案的方法使用酸扩散
公开(公告)号：US20090274980A1
公开(公告)日：2009-11-05
申请号：US12267687
申请日：2008-11-10
申请人： Yool Kang , Suk-joo Lee , Jung-hyeon Lee , Shi-yong Yi
发明人： Yool Kang , Suk-joo Lee , Jung-hyeon Lee , Shi-yong Yi
IPC分类号： G03F7/20
CPC分类号： H01L21/027 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0338 , H01L21/32139
摘要： A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.
摘要翻译：提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。在该方法中，在基板上形成多个第一掩模图案以彼此分离。在多个第一掩模图案的每一个的侧壁和上表面上形成包括酸源的封盖膜。在封盖膜上形成第二掩模层。通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留在第一间隙中的第二掩模层的残留部分形成。

3. 发明申请

US20070287299A1 Method of forming a semiconductor device 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US20070287299A1
公开(公告)日：2007-12-13
申请号：US11711781
申请日：2007-02-28
申请人： Doo-youl Lee , Suk-joo Lee , Yool Kang , Han-ku Cho , Chang-jin Kang , Jae-ok Yoo , Sung-chan Park
发明人： Doo-youl Lee , Suk-joo Lee , Yool Kang , Han-ku Cho , Chang-jin Kang , Jae-ok Yoo , Sung-chan Park
IPC分类号： H01L21/266
CPC分类号： H01L21/0337
摘要： A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.
摘要翻译：形成半导体器件的方法包括：在目标层上形成第一掩模图案，第一掩模图案暴露目标层的第一部分，形成中间材料层，包括在第一掩模图案的一侧上沉积中间材料层膜掩模图案和目标层的第一部分，并且使中间材料层膜变薄以形成中间材料层，形成暴露中间材料层的第二部分的第二掩模图案，去除中间材料的暴露的第二部分层以露出目标层，以及使用第一和第二掩模图案作为图案掩模来图案化目标层。

4. 发明申请

US20060127816A1 Double photolithography methods with reduced intermixing of solvents 审中-公开
标题翻译：双光刻法减少了溶剂的混合
公开(公告)号：US20060127816A1
公开(公告)日：2006-06-15
申请号：US11296816
申请日：2005-12-07
申请人： Yool Kang , Han-ku Cho , Sang-Gyun Woo , Suk-Joo Lee , Man-Hyung Ryoo , Mitsuhiro Hata , Hyung-Rae Lee
发明人： Yool Kang , Han-ku Cho , Sang-Gyun Woo , Suk-Joo Lee , Man-Hyung Ryoo , Mitsuhiro Hata , Hyung-Rae Lee
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273
摘要： The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.
摘要翻译：本发明提供一种双光刻方法，其中在半导体衬底上形成包括可交联剂的第一光致抗蚀剂图案之后，在第一光致抗蚀剂图案的分子结构中形成交联。可以在其上形成有交联的第一光致抗蚀剂图案的半导体衬底的表面上形成第二光致抗蚀剂膜。可以通过曝光，曝光后烘烤和显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案。

5. 发明申请

US20060115772A1 Polymeric tetrahedral carbon films, methods of forming the same and methods of forming fine patterns using the same 审中-公开
标题翻译：聚合四面体碳膜，其形成方法和使用其形成精细图案的方法
公开(公告)号：US20060115772A1
公开(公告)日：2006-06-01
申请号：US11282368
申请日：2005-11-18
申请人： Jung-Hwan Hah , Yool Kang , Man-Hyoung Ryoo , Shi-Yong Yi , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Yool Kang , Man-Hyoung Ryoo , Shi-Yong Yi , Sang-Gyun Woo
IPC分类号： G03C5/00
CPC分类号： G03F7/091 , C08G61/02
摘要： The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.
摘要翻译：本发明提供了聚合物膜，其包括具有包含四面体中心原子的sp 3 O 3碳主框的聚合物。还提供了形成它们的方法，包括其的硬标记和使用其形成精细图案的方法。

6. 发明授权

US07842450B2 Method of forming a semiconductor device 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US07842450B2
公开(公告)日：2010-11-30
申请号：US11711781
申请日：2007-02-28
申请人： Doo-youl Lee , Suk-joo Lee , Yool Kang , Han-ku Cho , Chang-jin Kang , Jae-ok Yoo , Sung-chan Park
发明人： Doo-youl Lee , Suk-joo Lee , Yool Kang , Han-ku Cho , Chang-jin Kang , Jae-ok Yoo , Sung-chan Park
IPC分类号： G03F7/00
CPC分类号： H01L21/0337
摘要： A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.
摘要翻译：形成半导体器件的方法包括：在目标层上形成第一掩模图案，第一掩模图案暴露目标层的第一部分，形成中间材料层，包括在第一掩模图案的一侧上沉积中间材料层膜掩模图案和目标层的第一部分，并且使中间材料层膜变薄以形成中间材料层，形成暴露中间材料层的第二部分的第二掩模图案，去除中间材料的暴露的第二部分层以露出目标层，以及使用第一和第二掩模图案作为图案掩模来图案化目标层。

7. 发明授权

US07560768B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07560768B2
公开(公告)日：2009-07-14
申请号：US11594808
申请日：2006-11-09
申请人： Cha-Won Koh , Byung-Hong Chung , Sang-Gyun Woo , Jeong-Lim Nam , Seok-Hwan Oh , Jai-Hyuk Song , Hyun Park , Yool Kang
发明人： Cha-Won Koh , Byung-Hong Chung , Sang-Gyun Woo , Jeong-Lim Nam , Seok-Hwan Oh , Jai-Hyuk Song , Hyun Park , Yool Kang
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件的浮置栅极可以沿着沿着控制栅电极延伸的方向截取十字形截面。浮置栅极可以具有沿着垂直于控制栅电极的有源区延伸的方向的T形截面。浮栅电极可以包括顺序地设置在栅绝缘层上的下栅极图案，中栅极图案和上栅极图案，其中中间栅极图案的宽度大于下栅极图案和上栅极图案。中间栅极图案和上部栅极图案之间的边界可以具有圆角。

8. 发明申请

US20080076070A1 Methods of Forming Fine Patterns In Integrated Circuits Using Atomic Layer Deposition 审中-公开
标题翻译：在使用原子层沉积的集成电路中形成精细图案的方法
公开(公告)号：US20080076070A1
公开(公告)日：2008-03-27
申请号：US11554324
申请日：2006-10-30
申请人： Cha-won Koh , Han-ku Cho , Gi-sung Yeo , Yool Kang , Ji-young Lee , Doo-youl Lee
发明人： Cha-won Koh , Han-ku Cho , Gi-sung Yeo , Yool Kang , Ji-young Lee , Doo-youl Lee
IPC分类号： G03F7/00
CPC分类号： H01L21/31144 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L21/76816
摘要： A fine pattern is formed in an integrated circuit substrate, by forming a sacrificial pattern on the integrated circuit substrate. The sacrificial pattern includes tops and side walls. Atomic layer deposition is then performed to atomic layer deposit a mask material layer on the sacrificial pattern, including on the tops and the side walls thereof, and on the integrated circuit substrate therebetween. The mask material layer that was atomic layer deposited is then etched, to expose the top and the integrated circuit therebetween, such that a mask material pattern remains on the side walls. The sacrificial pattern is then removed, and the integrated circuit substrate is then etched through the mask material pattern that remains.
摘要翻译：通过在集成电路基板上形成牺牲图案，在集成电路基板上形成精细图案。牺牲图案包括顶部和侧壁。然后进行原子层沉积以在牺牲图案上沉积掩模材料层，包括在其顶部和侧壁上以及其间的集成电路基板上。然后蚀刻原子层沉积的掩模材料层，以暴露其间的顶部和集成电路，使得掩模材料图案残留在侧壁上。然后去除牺牲图案，然后通过保留的掩模材料图案蚀刻集成电路基板。

9. 发明授权

US06803176B2 Methods for forming line patterns in semiconductor substrates 失效
标题翻译：在半导体衬底中形成线图案的方法
公开(公告)号：US06803176B2
公开(公告)日：2004-10-12
申请号：US10227067
申请日：2002-08-23
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F740
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要翻译：一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

10. 发明授权

US06787287B2 Photosensitive polymers and resist compositions comprising the photosensitive polymers 失效
标题翻译：包含光敏聚合物的光敏聚合物和抗蚀剂组合物
公开(公告)号：US06787287B2
公开(公告)日：2004-09-07
申请号：US10103756
申请日：2002-03-25
申请人： Hyun-woo Kim , Sang-gyun Woo , Yool Kang
发明人： Hyun-woo Kim , Sang-gyun Woo , Yool Kang
IPC分类号： G03F7075
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.
摘要翻译：抗蚀剂组合物的光敏聚合物包括由下式表示的含硅烷基乙烯基醚和马来酸酐的共聚物：其中R1是-H，-OSi（CH3）2C（CH3）3或-OSi（CH3）3; R2是-H，-OH，-OCOCH3，-OSi（CH3）2C（CH3）3或-OSi（CH（CH3）2）3; R3是-H，-OH或-OCOCH3; R4是-H，-OSi（CH3）2C（CH3）3，-CH2OSi（CH3）2C（CH3）3或-CH2OSi（CH（CH3）2）3; R 1，R 2，R 3和R 4中的至少一个为含Si基团。

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