专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06887774B2 Conductor layer nitridation 有权
标题翻译：导体层氮化
公开(公告)号：US06887774B2
公开(公告)日：2005-05-03
申请号：US10881630
申请日：2004-06-30
申请人： Yongjun Hu , Randhir P.S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Randhir P.S. Thakur , Scott DeBoer
IPC分类号： H01L21/28 , H01L21/8242 , H01L29/49 , H01L21/3205 , H01L29/76
CPC分类号： H01L21/28052 , H01L21/28061 , H01L27/10891 , H01L29/4941 , Y10S257/914 , Y10S257/915
摘要： Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.
摘要翻译：用于形成字线堆叠的方法和装置包括形成耦合在底部硅层和导体层之间的薄氮化物层。在另一个实施例中，扩散阻挡层耦合在薄氮化物层和底部硅层之间。通过在含氮环境中退火氧化硅膜来形成薄氮化物层。

2. 发明授权

US6015997A Semiconductor structure having a doped conductive layer 失效
公开(公告)号：US6015997A
公开(公告)日：2000-01-18
申请号：US803174
申请日：1997-02-19
申请人： Yongjun Hu , Pai-Hung Pan , Er-Xuan Ping , Randhir P.S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Pai-Hung Pan , Er-Xuan Ping , Randhir P.S. Thakur , Scott DeBoer
IPC分类号： H01L21/28 , H01L29/49 , H01L29/76 , H01L29/74 , H01L31/062 , H01L31/113
CPC分类号： H01L21/28044 , H01L21/28052 , H01L29/4941
摘要： Methods and apparatus for forming word line stacks comprise one, or a combination of the following: a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer; an amorphous silicon diffusion barrier coupled between a polysilicon layer and a conductor layer; a thin nitride layer coupled between a bottom silicon layer and a titanium silicide conductor layer, and a bottom silicon layer coupled to a conductor layer, which comprises C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.

3. 发明授权

US06436818B1 Semiconductor structure having a doped conductive layer 有权
标题翻译：具有掺杂导电层的半导体结构
公开(公告)号：US06436818B1
公开(公告)日：2002-08-20
申请号：US09455115
申请日：1999-12-06
申请人： Yongjun Hu , Pai-Hung Pan , Er-Xuan Ping , Randhir P. S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Pai-Hung Pan , Er-Xuan Ping , Randhir P. S. Thakur , Scott DeBoer
IPC分类号： H01L2976
CPC分类号： H01L21/28044 , H01L21/28052 , H01L29/4941
摘要： Methods and apparatus for forming word line stacks comprise one, or a combination of the following: a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer; an amorphous silicon diffusion barrier coupled between a polysilicon layer and a conductor layer; a thin nitride layer coupled between a bottom silicon layer and a titanium silicide conductor layer, and a bottom silicon layer coupled to a conductor layer, which comprises C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.
摘要翻译：用于形成字线堆叠的方法和装置包括以下的一个或组合：掺杂有氧或氮的硅扩散阻挡层，耦合在底部硅层和导体层之间; 耦合在多晶硅层和导体层之间的非晶硅扩散势垒; 耦合在底部硅层和硅化钛导体层之间的薄氮化物层和耦合到导体层的底部硅层，其包含C54-硅酸钛。通过本发明的方法形成的字线叠层用于0.25μm以下的线宽应用，并具有较低的电阻率和改善的热稳定性。

4. 发明授权

US06798026B2 Conductor layer nitridation 有权
公开(公告)号：US06798026B2
公开(公告)日：2004-09-28
申请号：US10231758
申请日：2002-08-29
申请人： Yongjun Hu , Randhir P. S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Randhir P. S. Thakur , Scott DeBoer
IPC分类号： H01L2976
CPC分类号： H01L21/28052 , H01L21/28061 , H01L27/10891 , H01L29/4941 , Y10S257/914 , Y10S257/915
摘要： Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

5. 发明授权

US06525384B2 Conductor layer nitridation 有权
标题翻译：导体层氮化
公开(公告)号：US06525384B2
公开(公告)日：2003-02-25
申请号：US09131993
申请日：1998-08-11
申请人： Yongjun Hu , Randhir P. S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Randhir P. S. Thakur , Scott DeBoer
IPC分类号： H01L31119
CPC分类号： H01L21/28052 , H01L21/28061 , H01L27/10891 , H01L29/4941 , Y10S257/914 , Y10S257/915
摘要： Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.
摘要翻译：用于形成字线堆叠的方法和装置包括形成耦合在底部硅层和导体层之间的薄氮化物层。在另一个实施例中，扩散阻挡层耦合在薄氮化物层和底部硅层之间。通过在含氮环境中退火氧化硅膜来形成薄氮化物层。

6. 发明授权

US5926730A Conductor layer nitridation 失效
公开(公告)号：US5926730A
公开(公告)日：1999-07-20
申请号：US802861
申请日：1997-02-19
申请人： Yongjun Hu , Randhir P. S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Randhir P. S. Thakur , Scott DeBoer
IPC分类号： H01L21/28 , H01L21/8242 , H01L29/49 , H01L21/3115 , H01L21/318 , H01L21/324
CPC分类号： H01L21/28052 , H01L21/28061 , H01L29/4941 , H01L27/10891 , Y10S257/914 , Y10S257/915
摘要： Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

7. 发明申请

US20060267062A1 Double sided container process used during the manufacture of a semiconductor device 有权
公开(公告)号：US20060267062A1
公开(公告)日：2006-11-30
申请号：US11496605
申请日：2006-07-31
申请人： Scott DeBoer , Ronald Weimer , John Moore
发明人： Scott DeBoer , Ronald Weimer , John Moore
IPC分类号： H01L29/94
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76895 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/41725
摘要： A method used during the formation of a semiconductor device comprises providing a wafer substrate assembly comprising a plurality of digit line plug contact pads and capacitor storage cell contact pads which contact a semiconductor wafer. A dielectric layer is provided over the wafer substrate assembly and etched to expose the digit line plug contact pads, and a liner is provided in the opening. A portion of the digit line plug is formed, then the dielectric layer is etched again to expose the capacitor storage cell contact pads. A capacitor bottom plate is formed to contact the storage cell contact pads, then the dielectric layer is etched a third time using the liner and the bottom plate as an etch stop layer. A capacitor cell dielectric layer and capacitor top plate are formed which provide a double-sided container cell. An additional dielectric layer is formed, then the additional dielectric layer, cell top plate, and the cell dielectric are etched to expose the digit line plug portion. Finally, a second digit line plug portion is formed to contact the first plug portion. A novel structure resulting from the inventive method is also discussed.

8. 发明申请

US20060007631A1 Capacitor electrode having an interface layer of different chemical composition formed on a bulk layer 失效
标题翻译：在本体层上形成具有不同化学组成的界面层的电容器电极
公开(公告)号：US20060007631A1
公开(公告)日：2006-01-12
申请号：US11216411
申请日：2005-08-31
申请人： Scott DeBoer , Don Powell
发明人： Scott DeBoer , Don Powell
IPC分类号： H01G4/005
CPC分类号： H01L28/60 , H01L21/7687 , H01L27/10852 , H01L28/91
摘要： An improved capacitor that is less susceptible to the depletion effect and methods for providing the same. The capacitor comprises a first and second electrode and an insulating layer interposed therebetween. The first electrode includes a bulk layer comprising n-doped polysilicon. The first electrode also includes an interface layer extending from a first surface of the bulk layer to the insulating layer. The interface layer is heavily doped with phosphorus so that the depletion region of the first electrode is confined substantially within the interface layer. The method of forming the interface layer comprises depositing a layer of hexamethldisilazane (HMDS) material over the first surface of the bulk layer so that HMDS molecules of the HMDS material chemically bond to the first surface of the bulk layer. The method further comprises annealing the layer of HMDS material in a phosphine ambient so as to replace CH3 methyl groups with PH3 molecules. The interface layer is then passivated in a nitrogen ambient having a reduced temperature so as to reduce the number of dangling silicon bonds of the lower electrode in a manner that results in reduced thermal damage to neighboring circuit elements.
摘要翻译：对消耗效应不太敏感的改进的电容器及其提供方法。电容器包括第一和第二电极以及介于它们之间的绝缘层。第一电极包括包含n掺杂多晶硅的体层。第一电极还包括从主体层的第一表面延伸到绝缘层的界面层。界面层用磷重掺杂，使得第一电极的耗尽区基本上被限制在界面层内。形成界面层的方法包括在本体层的第一表面上沉积一层六甲基二硅氮烷（HMDS）材料，使得HMDS材料的HMDS分子化学键合到本体层的第一表面。该方法还包括在磷化氢环境中退火HMDS材料层，以便用PH 3分子取代CH 3 3甲基。然后在具有降低的温度的氮气环境中钝化界面层，以便以导致对相邻电路元件的热损伤降低的方式减少下电极的悬挂硅键的数量。

9. 发明申请

US20050161710A1 Capacitor having tantalum oxynitride film and method for making same 失效
公开(公告)号：US20050161710A1
公开(公告)日：2005-07-28
申请号：US11073800
申请日：2005-03-07
申请人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
发明人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
IPC分类号： H01L21/02 , H01L21/316 , H01L21/8242 , H01L31/119
CPC分类号： H01L21/02326 , G11C17/16 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/31604 , H01L21/31637 , H01L23/5252 , H01L27/10852 , H01L27/10861 , H01L27/112 , H01L27/11206 , H01L28/40 , H01L28/65 , H01L28/84 , H01L2924/0002 , H01L2924/00
摘要： A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

10. 发明授权

US06291364B1 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
标题翻译：用于稳定半导体器件的高压氧化的方法和装置
公开(公告)号：US06291364B1
公开(公告)日：2001-09-18
申请号：US09386941
申请日：1999-08-31
申请人： F. Daniel Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
发明人： F. Daniel Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
IPC分类号： H01L2631
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。该催化剂用于5气压至25气氛N2O和600至750℃温度范围的环境中，这是导致N2O超临界的条件。通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式