专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08082525B2 Technique for correcting hotspots in mask patterns and write patterns 有权
标题翻译：用于校正掩模图案和写入模式中的热点的技术
公开(公告)号：US08082525B2
公开(公告)日：2011-12-20
申请号：US12423693
申请日：2009-04-14
申请人： Yong Liu , John F. McCarty , Kelly Gordon Russell , Linyong Pang
发明人： Yong Liu , John F. McCarty , Kelly Gordon Russell , Linyong Pang
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00 , G21K5/00
CPC分类号： G06F17/5081 , G03F1/36 , G03F7/70291
摘要： Embodiments of a method for determining a mask pattern to be used on a photo-mask in a lithography process are described. This method may be performed by a computer system. During operation, this computer system receives at least a portion of a first mask pattern including first regions that violate pre-determined rules associated with the photo-mask. Next, the computer system determines a second mask pattern based on at least the portion of the first mask pattern, where the second mask pattern includes second regions that are estimated to comply with the pre-determined rules. Note that the second regions correspond to the first regions, and the second mask pattern is determined using a different technique than that used to determine the first mask pattern.
摘要翻译：描述用于确定在光刻工艺中在光掩模上使用的掩模图案的方法的实施例。该方法可以由计算机系统执行。在操作期间，该计算机系统接收包括违反与光掩模相关联的预定规则的第一区域的第一掩模图案的至少一部分。接下来，计算机系统至少基于第一掩模图案的部分确定第二掩模图案，其中第二掩模图案包括估计符合预定规则的第二区域。注意，第二区域对应于第一区域，并且使用与用于确定第一掩模图案的技术不同的技术来确定第二掩模图案。

2. 发明申请

US20090293037A1 Technique for Correcting Hotspots in Mask Patterns and Write Patterns 有权
标题翻译：修正面具图案和写作模式中的热点技术
公开(公告)号：US20090293037A1
公开(公告)日：2009-11-26
申请号：US12423693
申请日：2009-04-14
申请人： Yong Liu , John F. McCarty , Kelly Gordon Russell , Linyong Pang
发明人： Yong Liu , John F. McCarty , Kelly Gordon Russell , Linyong Pang
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F7/70291
摘要： Embodiments of a method for determining a mask pattern to be used on a photo-mask in a lithography process are described. This method may be performed by a computer system. During operation, this computer system receives at least a portion of a first mask pattern including first regions that violate pre-determined rules associated with the photo-mask. Next, the computer system determines a second mask pattern based on at least the portion of the first mask pattern, where the second mask pattern includes second regions that are estimated to comply with the pre-determined rules. Note that the second regions correspond to the first regions, and the second mask pattern is determined using a different technique than that used to determine the first mask pattern.
摘要翻译：描述用于确定在光刻工艺中在光掩模上使用的掩模图案的方法的实施例。该方法可以由计算机系统执行。在操作期间，该计算机系统接收包括违反与光掩模相关联的预定规则的第一区域的第一掩模图案的至少一部分。接下来，计算机系统至少基于第一掩模图案的部分确定第二掩模图案，其中第二掩模图案包括估计符合预定规则的第二区域。注意，第二区域对应于第一区域，并且使用与用于确定第一掩模图案的技术不同的技术来确定第二掩模图案。

3. 发明授权

US08498469B2 Full-field mask error enhancement function 有权
标题翻译：全场掩模误差增强功能
公开(公告)号：US08498469B2
公开(公告)日：2013-07-30
申请号：US12715351
申请日：2010-03-01
申请人： Guangming Xiao , Thomas C. Cecil , Linyong Pang , Robert E. Gleason , John F. McCarty
发明人： Guangming Xiao , Thomas C. Cecil , Linyong Pang , Robert E. Gleason , John F. McCarty
IPC分类号： G06K9/00
CPC分类号： G06K9/036
摘要： A technique for determining a full-field Mask Error Enhancement Function (MEEF) associated with a mask pattern for use in a photo-lithographic process is described. In this technique, simulated wafer patterns corresponding to the mask pattern are generated at an image plane in an optical path associated with the photo-lithographic process. Then, the full-field MEEF is determined. This full-field MEEF includes MEEF values in multiple directions at positions along one or more contours that define boundaries of one or more features in the one or more simulated wafer patterns. Moreover, at least one of the MEEF values is at a position on a contour where a critical dimension for a feature associated with the contour is undefined.
摘要翻译：描述了用于确定与光刻工艺中使用的掩模图案相关联的全场掩模误差增强功能（MEEF）的技术。在该技术中，在与光刻工艺相关联的光路中的图像平面处产生与掩模图案对应的模拟晶片图案。然后，确定全场MEEF。该全场MEEF在沿着一个或多个轮廓的位置处的多个方向上包括定义一个或多个模拟晶片图案中的一个或多个特征的边界的MEEF值。此外，MEEF值中的至少一个位于轮廓上的与轮廓相关联的特征的临界尺寸未定义的位置。

4. 发明申请

US20110211748A1 Full-Field Mask Error Enhancement Function 有权
标题翻译：全场掩码错误增强功能
公开(公告)号：US20110211748A1
公开(公告)日：2011-09-01
申请号：US12715351
申请日：2010-03-01
申请人： Guangming Xiao , Thomas C. Cecil , Linyong Pang , Robert E. Gleason , John F. McCarty
发明人： Guangming Xiao , Thomas C. Cecil , Linyong Pang , Robert E. Gleason , John F. McCarty
IPC分类号： G06K9/62
CPC分类号： G06K9/036
摘要： A technique for determining a full-field Mask Error Enhancement Function (MEEF) associated with a mask pattern for use in a photo-lithographic process is described. In this technique, simulated wafer patterns corresponding to the mask pattern are generated at an image plane in an optical path associated with the photo-lithographic process. Then, the full-field MEEF is determined. This full-field MEEF includes MEEF values in multiple directions at positions along one or more contours that define boundaries of one or more features in the one or more simulated wafer patterns. Moreover, at least one of the MEEF values is at a position on a contour where a critical dimension for a feature associated with the contour is undefined.
摘要翻译：描述了用于确定与光刻工艺中使用的掩模图案相关联的全场掩模误差增强功能（MEEF）的技术。在该技术中，在与光刻工艺相关联的光路中的图像平面处产生与掩模图案对应的模拟晶片图案。然后，确定全场MEEF。该全场MEEF在沿着一个或多个轮廓的位置处的多个方向上包括定义一个或多个模拟晶片图案中的一个或多个特征的边界的MEEF值。此外，MEEF值中的至少一个位于轮廓上的与轮廓相关联的特征的临界尺寸未定义的位置。

5. 发明申请

US20210321075A1 3D CMOS Image Sensor and Imaging Device Design, Process, and Method 有权
公开(公告)号：US20210321075A1
公开(公告)日：2021-10-14
申请号：US16873734
申请日：2020-06-17
申请人： Linyong Pang
发明人： Linyong Pang
IPC分类号： H04N13/207 , H01L27/146 , G02B27/42 , H04N5/374 , H04N13/257 , H04N9/04
摘要： A 3D image sensor based on standard Complementary Metal Oxide Semiconductor (CMOS) process is described. The conventional CMOS image sensor measures a 2D projection of the 3D world in gray-scale or color image; this new sensor can measure the third dimension on the 2D image—the depth of object on the 2D image pixels. Since the standard CMOS image sensor can only sense intensity (the number of photons) at each CMOS pixel, this new sensor creates a new mechanism to encode the depth information into an intensity distribution change that CMOS sensor can sense. The idea is based on the observation or lens imaging theory that light cone for any point (pixel) on the image plane is narrower for a near object and wider for a distant object. We then use diffraction to measure the change of incident angle, based on the theory that an oblique light goes through a finite grating producing diffraction patterns multiple times from near field to far field, the incident angle is reflected as diffraction pattern shift. We use a normal CMOS patterning process to create gratings on top of photosensitive material, and place multiple pixels at a certain distance from the gratings to sense the intensity distribution change or shift for different light cones. Then the depth can be calculated by solving the imaging inverse problem. The solution or intermedium solution of such an inverse problem can be pre-calculated or pre-calibrated and placed in lookup tables so that the image sensor can output directly depth information from the 3D CMOS image sensor.

6. 发明授权

US08683396B2 Determining source patterns for use in photolithography 有权
标题翻译：确定用于光刻的源图案
公开(公告)号：US08683396B2
公开(公告)日：2014-03-25
申请号：US12507336
申请日：2009-07-22
申请人： Changquing Hu , Linyong Pang
发明人： Changquing Hu , Linyong Pang
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70125 , G03F7/70441
摘要： Embodiments of a computer system, a process, a computer-program product (i.e., software), and a data structure or a file for use with the computer system are described. These embodiments may be used to determine or generate source patterns that define illumination patterns on photo-masks during a photolithographic process. Moreover, a given source pattern may be determined concurrently with an associated mask pattern (to which a given photo-mask corresponds) or sequentially (i.e., either the given source pattern may be determined before the associated mask pattern or vice versa.). During the determining, the given source pattern may be represented using one or more level-set functions. Additionally, the source pattern may be determined using an Inverse Lithography (ILT) calculation.
摘要翻译：描述计算机系统，过程，计算机程序产品（即软件）以及用于计算机系统的数据结构或文件的实施例。这些实施例可以用于在光刻工艺期间确定或生成在光掩模上限定照明图案的源图案。此外，给定源图案可以与相关联的掩模图案（给定光掩模对应于）或顺序地确定（即，给定源图案可以在相关联的掩模图案之前确定，反之亦然）来确定。在确定期间，可以使用一个或多个水平集函数来表示给定的源模式。另外，源图案可以使用逆平版印刷（ILT）计算来确定。

7. 发明授权

US08111898B2 Method for facilitating automatic analysis of defect printability 有权
标题翻译：便于自动分析缺陷可印刷性的方法
公开(公告)号：US08111898B2
公开(公告)日：2012-02-07
申请号：US10313706
申请日：2002-12-06
申请人： Linyong Pang
发明人： Linyong Pang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/7065 , G06T7/001 , G06T2207/30148
摘要： Defect printability analysis in a mask or wafer requires the accurate identification of defect images and reference (i.e. defect-free) images, in particular for a die-to-die inspection mode. A method of automatically distinguishing a reference image from a defect image is provided. In this method, multiple images can be accessed and aligned. Then, a common area of the multiple images can be defined. At this point, a complexity of each of the images, as defined by the common area, can be computed. Advantageously, by comparing the complexity of the multiple images, the reference and defect images can be quickly and accurately designated. Specifically, the most complex image is designated the defect image because the defect image must describe the defect. Complexity can be computed using various techniques.
摘要翻译：在掩模或晶片中的缺陷可印刷性分析需要精确地识别缺陷图像和参考（即，无缺陷）图像，特别是对于模 - 模检查模式。提供了一种自动区分参考图像和缺陷图像的方法。在这种方法中，可以访问和对齐多个图像。然后，可以定义多个图像的公共区域。在这一点上，可以计算由公共区域定义的每个图像的复杂度。有利地，通过比较多个图像的复杂度，可以快速和准确地指定参考和缺陷图像。具体地说，最复杂的图像被指定为缺陷图像，因为缺陷图像必须描述缺陷。可以使用各种技术来计算复杂度。

8. 发明授权

US07689967B2 Reference image generation from subject image for photolithography mask analysis 有权
标题翻译：用于光刻掩模分析的被摄体图像的参考图像生成
公开(公告)号：US07689967B2
公开(公告)日：2010-03-30
申请号：US11556673
申请日：2006-11-03
申请人： Linyong Pang
发明人： Linyong Pang
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00
CPC分类号： G03F1/84 , G06T7/0002 , G06T7/001 , G06T7/97 , G06T2207/30148
摘要： A reference image is generated from a subject image of at least a portion of a photolithography mask to enable a photolithography mask inspection and analysis system that otherwise cannot generate a reference image from a reference die or digitized design data, for example, to perform a mask analysis using the reference image. A mask inspection and analysis system may then be enhanced to perform one or more additional mask analyses to analyze the mask. The reference image is generated by identifying a defect or contaminant of the mask in the subject image and modifying the subject image to remove the defect or contaminant from the mask to generate the reference image. For one embodiment, a system using a STARlight inspection tool that captures transmitted and reflected images of a portion of a mask may then be enhanced to perform one or more mask analyses that use a reference image.
摘要翻译：从光刻掩模的至少一部分的被摄体图像生成参考图像，以使得否则不能从参考管芯或数字化设计数据生成参考图像的光刻掩模检查和分析系统，例如执行掩模使用参考图像进行分析。然后可以增强掩模检查和分析系统以执行一个或多个附加掩模分析来分析掩模。通过识别对象图像中的掩模的缺陷或污染物并修改被摄体图像以从掩模去除缺陷或污染物以产生参考图像来生成参考图像。对于一个实施例，然后可以增强使用捕捉掩模的一部分的发射和反射图像的STARlight检查工具的系统来执行使用参考图像的一个或多个掩模分析。

9. 发明授权

US07254251B2 System and method of providing mask defect printability analysis 有权
标题翻译：提供掩模缺陷可印刷性分析的系统和方法
公开(公告)号：US07254251B2
公开(公告)日：2007-08-07
申请号：US11043398
申请日：2005-01-25
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

10. 发明授权

US06254539B1 Transducer motion compensation in medical diagnostic ultrasound 3-D imaging 有权
标题翻译：医学诊断超声3-D成像中的传感器运动补偿
公开(公告)号：US06254539B1
公开(公告)日：2001-07-03
申请号：US09384074
申请日：1999-08-26
申请人： Linyong Pang , John A. Hossack
发明人： Linyong Pang , John A. Hossack
IPC分类号： A61B800
CPC分类号： G01S7/5205 , A61B8/00 , G01S15/8993 , G06T3/0006
摘要： A 3-D medical diagnostic ultrasonic imaging system corrects the elevational position of individual pixels based on the elevational motion of the transducer probe and the azimuthal position of individual pixels. In this way, the correct spatial position and orientation of multi-frame, sequentially required images is obtained, and 3-D volume reconstruction is made more accurate. Optionally, the acquired images and the measure of transducer in-plane translation and rotation are also corrected for azimuthal motion of the transducer.
摘要翻译：三维医学诊断超声成像系统基于换能器探头的高程运动和各个像素的方位位置校正各个像素的高程位置。以这种方式，获得了多帧，顺序需要的图像的正确的空间位置和取向，并且使3-D体积重建更准确。可选地，所获取的图像和换能器平面内平移和旋转的测量也被校正为换能器的方位角运动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式