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1. 发明授权

US07835565B2 System and method of providing mask defect printability analysis 有权
标题翻译：提供掩模缺陷可印刷性分析的系统和方法
公开(公告)号：US07835565B2
公开(公告)日：2010-11-16
申请号：US12480647
申请日：2009-06-08
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

2. 发明授权

US07565001B2 System and method of providing mask defect printability analysis 有权
公开(公告)号：US07565001B2
公开(公告)日：2009-07-21
申请号：US12139315
申请日：2008-06-13
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

3. 发明授权

US06870951B2 Method and apparatus to facilitate auto-alignment of images for defect inspection and defect analysis 有权
标题翻译：促进图像自动校准的方法和装置，用于缺陷检查和缺陷分析
公开(公告)号：US06870951B2
公开(公告)日：2005-03-22
申请号：US10074751
申请日：2002-02-13
申请人： Lynn Cai
发明人： Lynn Cai
IPC分类号： G06T7/00 , G06K9/00
CPC分类号： G06T7/001 , G06T7/33 , G06T2207/30148
摘要： One embodiment of the invention provides a system that facilitates auto-alignment of images for defect inspection and defect analysis. The system operates by first receiving a reference image and a test image. Next, the system creates a horizontal cut line across the reference image and chooses a vertical feature on the reference image with a specified width along the horizontal cut line. The system also creates a vertical cut line across the reference image and chooses a horizontal feature on the reference image with the specified width along the vertical cut line. Finally, the system locates the vertical feature and the horizontal feature on the test image so that the reference image and the test image can be aligned to perform defect inspection and defect analysis.
摘要翻译：本发明的一个实施例提供一种便于自动对准图像以进行缺陷检查和缺陷分析的系统。该系统首先接收参考图像和测试图像来操作。接下来，系统在参考图像上创建水平切割线，并且沿着水平切割线以指定的宽度选择参考图像上的垂直特征。该系统还在参考图像上创建垂直切割线，并在垂直切割线上以指定的宽度选择参考图像上的水平特征。最后，系统在测试图像上定位垂直特征和水平特征，使参考图像和测试图像对齐，进行缺陷检测和缺陷分析。

4. 发明申请

US20070292017A1 System And Method Of Providing Mask Defect Printablity Analysis 有权
标题翻译：提供掩模缺陷打印分析的系统和方法
公开(公告)号：US20070292017A1
公开(公告)日：2007-12-20
申请号：US11770682
申请日：2007-06-28
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

5. 发明授权

US06925202B2 System and method of providing mask quality control 有权
标题翻译：提供面罩质量控制的系统和方法
公开(公告)号：US06925202B2
公开(公告)日：2005-08-02
申请号：US09814025
申请日：2001-03-20
申请人： Linard Karklin , Linyong Pang , Lynn Cai
发明人： Linard Karklin , Linyong Pang , Lynn Cai
IPC分类号： G01N21/956 , G03F1/84 , G03F7/20 , G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

6. 发明授权

US06873720B2 System and method of providing mask defect printability analysis 有权
标题翻译：提供掩模缺陷可印刷性分析的系统和方法
公开(公告)号：US06873720B2
公开(公告)日：2005-03-29
申请号：US09814023
申请日：2001-03-20
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G01N21/956 , G03F1/84 , G03F7/20 , G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

7. 发明申请

US20090245621A1 System And Method Of Providing Mask Defect Printability Analysis 有权
标题翻译：提供掩模缺陷印刷性分析的系统和方法
公开(公告)号：US20090245621A1
公开(公告)日：2009-10-01
申请号：US12480647
申请日：2009-06-08
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

8. 发明授权

US07403649B2 System and method of providing mask defect printability analysis 有权
标题翻译：提供掩模缺陷可印刷性分析的系统和方法
公开(公告)号：US07403649B2
公开(公告)日：2008-07-22
申请号：US11770682
申请日：2007-06-28
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

9. 发明申请

US20050190957A1 System and method of providing mask defect printability analysis 有权
公开(公告)号：US20050190957A1
公开(公告)日：2005-09-01
申请号：US11043398
申请日：2005-01-25
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G01N21/956 , G03F1/84 , G03F7/20 , G06K9/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

10. 发明申请

US20080260235A1 System And Method Of Providing Mask Defect Printability Analysis 有权
标题翻译：提供掩模缺陷印刷性分析的系统和方法
公开(公告)号：US20080260235A1
公开(公告)日：2008-10-23
申请号：US12139315
申请日：2008-06-13
申请人： Lynn Cai , Linard Karklin , Linyong Pang
发明人： Lynn Cai , Linard Karklin , Linyong Pang
IPC分类号： G06K9/78
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70433 , G03F7/705 , Y10T428/24802
摘要： A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
摘要翻译：使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

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