专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07392760B2 Microwave-excited plasma processing apparatus 有权
标题翻译：微波激发等离子体处理装置
公开(公告)号：US07392760B2
公开(公告)日：2008-07-01
申请号：US10989106
申请日：2004-11-16
申请人： Yoji Taguchi , Maiko Yoshida , Kohta Kusaba , Kibatsu Shinohara , Munekazu Matsuo , Kazuhiro Watanabe
发明人： Yoji Taguchi , Maiko Yoshida , Kohta Kusaba , Kibatsu Shinohara , Munekazu Matsuo , Kazuhiro Watanabe
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32192
摘要： A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.
摘要翻译：微波激发等离子体处理装置显示出宽的压力范围和广泛的适用电力范围，作为通过使用通过矩形波导切割的狭缝的结果的普通放电的结果，并且具有允许微波的电场和微波的轮廓在微波天线下面的微波引入窗口的下方均匀地形成。微波激发等离子体处理装置的特征在于具有四个椭圆形狭缝，该椭圆形切口穿过矩形波导的壁，该矩形波导的壁与真空室的顶壁的微波引入窗口保持接触，四个椭圆形狭缝分别沿着四面大面积的广场。

2. 发明授权

US06910440B2 Apparatus for plasma processing 失效
标题翻译：等离子体处理装置
公开(公告)号：US06910440B2
公开(公告)日：2005-06-28
申请号：US09979719
申请日：2001-01-18
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Kibatsu Shinohara
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Kibatsu Shinohara
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
摘要： A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.
摘要翻译：一种等离子体处理装置，其产生均匀的等离子体，从而允许大直径晶片的均匀加工。圆筒形装置包括晶片安装台，提供气密密封的石英板，用于以TE11模式传播微波的微波供应器，以及一端连接到微波供应器的圆柱形波导。径向波导盒连接在圆柱形波导的另一端和石英板之间。径向波导盒从圆柱形波导径向向外延伸，形成凸缘并限定内部波导空间。盘状槽天线位于径向波导盒的下端，位于石英板上方。设置在圆筒形波导管内的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波，并将旋转的微波发送到径向波导盒。

3. 发明授权

US06707253B2 Matching circuit and plasma processing apparatus 有权
标题翻译：匹配电路和等离子体处理装置
公开(公告)号：US06707253B2
公开(公告)日：2004-03-16
申请号：US10324031
申请日：2002-12-20
申请人： Kenji Sumida , Tomohiro Okumura , Yukihiro Maegawa , Ichiro Nakayama , Kibatsu Shinohara , Minoru Kanda , Shiniti Matamura
发明人： Kenji Sumida , Tomohiro Okumura , Yukihiro Maegawa , Ichiro Nakayama , Kibatsu Shinohara , Minoru Kanda , Shiniti Matamura
IPC分类号： H01J2336
CPC分类号： H01J37/32082 , H01J37/32183
摘要： The present invention provides a matching circuit which has a wide range in which matching can be achieved and the matched state of which is stabilized with respect to a change in the load state. To an input terminal (31) of a matching circuit (30), one terminal of a first variable reactance element (32) is connected. The other terminal of the first variable reactance element (32) is connected to a point between a first fixed reactance element (33a) and a second fixed reactance element (33b), which are connected in series. The first fixed reactance element (33a) is grounded, and the second fixed reactance element (33b) is connected to one terminal of a second variable reactance element (36) and connected to one terminal of a stripline (37). The other terminal of the second variable reactance element (36) is grounded, and the other terminal of the stripline (37) is connected to an output terminal (38).
摘要翻译：本发明提供一种匹配电路，其具有可以实现匹配的宽范围，并且其匹配状态相对于负载状态的变化是稳定的。对于匹配电路（30）的输入端子（31），连接第一可变电抗元件（32）的一个端子。第一可变电抗元件（32）的另一个端子连接到串联连接的第一固定电抗元件（33a）和第二固定电抗元件（33b）之间的点。第一固定电抗元件（33a）接地，第二固定电抗元件（33b）连接到第二可变电抗元件（36）的一个端子，并连接到带状线（37）的一个端子。第二可变电抗元件（36）的另一个端子接地，并且带状线（37）的另一个端子连接到输出端子（38）。

4. 发明授权

US6043608A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US6043608A
公开(公告)日：2000-03-28
申请号：US962390
申请日：1997-10-31
申请人： Seiji Samukawa , Yukito Nakagawa , Hisaaki Sato , Tsutomu Tsukada , Kibatsu Shinohara , Yasuo Niimura
发明人： Seiji Samukawa , Yukito Nakagawa , Hisaaki Sato , Tsutomu Tsukada , Kibatsu Shinohara , Yasuo Niimura
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05B37/00
CPC分类号： H01J37/32082
摘要： This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.
摘要翻译：本发明公开了一种等离子体处理装置，其使用通过向等离子体发生气体提供RF能量而产生的等离子体，在基板上进行处理。该设备包括具有泵送系统的真空室，用于将要处理的基板放置在真空室中的基板保持器，用于将等离子体产生气体引入等离子体产生空间的气体引入装置，用于提供RF 能量与等离子体产生气体。天线具有对称地设置在基板的轴线上的中心的多个天线元件和端部短路构件，使天线元件的每一端短路，从而施加与中心对称的RF电流路径。在RF能量的频率处共振的多个电路对称地形成在天线元件和端部短路部件上。通过相邻两个天线元件的总长度相加而获得的长度和相邻两个天线元件的端部之间的RF电流路径的长度对应于RF能量的波长的一秒。

5. 发明授权

US5542833A Apparatus for continuously vulcanizing rubber product 失效
标题翻译：用于连续硫化橡胶制品的装置
公开(公告)号：US5542833A
公开(公告)日：1996-08-06
申请号：US306006
申请日：1994-09-14
申请人： Shozo Watanabe , Kibatsu Shinohara
发明人： Shozo Watanabe , Kibatsu Shinohara
IPC分类号： B29C35/14 , B29C35/04 , B29C35/06 , B29C35/08 , B29C35/10 , B29C47/00 , B29K21/00 , B29K105/24 , B28B5/00
CPC分类号： B29C47/0028 , B29C35/06 , B29C35/10 , B29C2035/0822 , B29C2035/0855 , B29C2037/903 , B29C35/045 , B29C47/00 , B29C47/003 , B29K2021/00 , B29L2031/003
摘要： An apparatus for continuously vulcanizing a rubber molding extruded from an extruder is disclosed in which a single or plural microwave heating apparatus is arranged within a heating bath. The microwave heating apparatus can generate internal heating of the rubber molding so that a surface temperature of the rubber molding can be held at a temperature substantially equal to the internal temperature of the rubber molding. Thus, uniform vulcanization of the rubber molding occurs. In addition, when both the microwave heating apparatus and an external heating source are arranged within the heating bath, an infrared ray radiator, arranged within the heating bath, radiates infra-red rays according to energy absorbed from the microwave heating apparatus and the external heating source. Thus overall heating efficiency can be increased. Furthermore, when single or plural temperature sensors are arranged within the heating bath so as to detect temperatures on particular portions of the rubber molding, an on-and-off control of the microwave heating apparatus is carried out so as to maintain the temperature of the rubber molding on the basis of a previously set temperature.
摘要翻译：公开了一种用于连续硫化从挤出机挤出的橡胶模制件的装置，其中在加热浴中布置单个或多个微波加热装置。微波加热装置可以产生橡胶模制件的内部加热，使得橡胶模制件的表面温度可以保持在基本上等于橡胶模制件的内部温度的温度。因此，发生橡胶成型体的均匀硫化。此外，当微波加热装置和外部加热源都布置在加热槽内时，布置在加热槽内的红外线辐射器根据从微波加热装置吸收的能量和外部加热辐射红外线资源。因此，可以提高总体加热效率。此外，当单个或多个温度传感器布置在加热浴中以便检测橡胶模制件的特定部分上的温度时，进行微波加热装置的开关控制，以保持温度橡胶成型基于以前设定的温度。

6. 发明授权

US07186314B2 Plasma processor and plasma processing method 有权
标题翻译：等离子处理器和等离子体处理方法
公开(公告)号：US07186314B2
公开(公告)日：2007-03-06
申请号：US10543857
申请日：2004-01-26
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32192 , H01P5/1022
摘要： A plasma processor includes a table on which a target object is to be placed, a vessel which accommodates the table and in which a plasma is to be generated by a high-frequency electromagnetic field, a high-frequency oscillator (30) which generates a high-frequency electromagnetic field, and a reference oscillator (34) which is lower in output power than the high-frequency oscillator (30) and stable in oscillation frequency. A reference signal generated by the reference oscillator (34) is injected into the high-frequency oscillator (30) to fix an oscillation frequency of the high-frequency oscillator (30) at a frequency of a reference signal. Therefore, accurate load matching is performed to improve an energy efficiency when an automatic matching device provided between the high-frequency oscillator (30) and vessel is designed based on the frequency of the reference signal.
摘要翻译：等离子体处理器包括：待放置目标物体的台，容纳台的容器，高频电磁场要产生等离子体;高频振荡器，高频电磁场以及输出功率比高频振荡器（30）低的基准振荡器（34），振荡频率稳定。由基准振荡器（34）产生的参考信号被注入到高频振荡器（30）中，以将高频振荡器（30）的振荡频率固定在参考信号的频率上。因此，当基于参考信号的频率设计在高频振荡器（30）和容器之间提供的自动匹配装置时，执行精确的负载匹配以提高能量效率。

7. 发明授权

US07071442B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07071442B2
公开(公告)日：2006-07-04
申请号：US11009086
申请日：2004-12-13
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： B23K10/00
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32293
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. “Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container”.
摘要翻译：等离子体处理装置包括处理容器53，布置在处理容器53中以支撑晶片W的安装台61，与由安装台61支撑的晶片W相对的密封板55，设置在密封件上的环形天线73 板55由环形波导构成，环形波导通过密封板55将微波引入处理容器53中，环形天线73布置成使得包含由环形波导限定的环形波导路径的平面大致平行于密封板 55是配置在环形天线73周边的定向耦合器79，与定向耦合器79连接的传播波导81和与传播波导81连接的微波振荡器83。因此，可以在天线中形成均匀的微波，从而能够在处理容器中产生均匀的等离子体。

8. 发明申请

US20050173382A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20050173382A1
公开(公告)日：2005-08-11
申请号：US11009086
申请日：2004-12-13
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： H01J37/32 , B23K9/00 , H05B6/64
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32293
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.
摘要翻译：等离子体处理装置包括处理容器53，布置在处理容器53中以支撑晶片W的安装台61，与由安装台61支撑的晶片W相对的密封板55，设置在密封件上的环形天线73 板55由环形波导构成，环形波导通过密封板55将微波引入处理容器53中，环形天线73布置成使得包含由环形波导限定的环形波导路径的平面大致平行于密封板 55是配置在环形天线73的周边的定向耦合器79，与定向耦合器79连接的传播波导81和与传播波导81连接的微波振荡器83.因此，可以在天线，使得可以在处理容器中产生均匀的等离子体。

9. 发明授权

US5448173A Triple-probe plasma measuring apparatus for correcting space potential errors 失效
标题翻译：用于校正空间电位误差的三重探针等离子体测量装置
公开(公告)号：US5448173A
公开(公告)日：1995-09-05
申请号：US967014
申请日：1992-10-27
申请人： Kibatsu Shinohara , Tsuku Umezawa
发明人： Kibatsu Shinohara , Tsuku Umezawa
IPC分类号： G01R19/00 , H05H1/00 , G01N27/62 , G01K13/00 , G01R29/00
CPC分类号： G01R19/0061 , H05H1/0081
摘要： With a view to enabling errors in the space potential to be automatically corrected by detecting a floating potential in each of a plurality of probes and to remove the errors in measurement based on the corrected space potential to thereby realize the accurate measurement of the space potential, there is provided a triple-probe plasma measuring apparatus, which comprises: a circuit for measuring electron temperature and electron density of a plasma with use of triple probes; a circuit for detecting and holding a floating potential difference; a differential voltage adding circuit; a fixed voltage source; and a change-over switch, the apparatus being capable of determining a difference in the floating potentials at the position of said probes, and superimposing the potential difference determined on the fixed voltage.
摘要翻译：为了通过检测多个探针中的每一个探针中的浮动电位来使空间电位中的错误能够自动校正，并且基于校正的空间电位来消除测量中的误差，从而实现空间电位的精确测量，提供了一种三重探针等离子体测量装置，其包括：使用三重探针测量等离子体的电子温度和电子密度的电路; 用于检测和保持浮动电位差的电路; 差分电压加法电路; 固定电压源; 和切换开关，该装置能够确定所述探针位置上的浮动电位差，并叠加在固定电压上确定的电位差。

10. 发明授权

US5041803A Automatic load matching circuit for microwaves using multi-element matching device 失效
标题翻译：使用多元件匹配装置的微波自动负载匹配电路
公开(公告)号：US5041803A
公开(公告)日：1991-08-20
申请号：US497001
申请日：1990-03-21
申请人： Kibatsu Shinohara , Hiroshi Hasunuma
发明人： Kibatsu Shinohara , Hiroshi Hasunuma
IPC分类号： H01P1/00 , H01P5/04 , H03H7/40
CPC分类号： H03H7/40
摘要： An automatic load-matching circuit for microwaves, disposed on a transmission line between a signal source and a load. Signal detection means for detecting a travelling wave component and a reflected wave component and for producing outputs corresponding to the absolute value of reflection coefficient .GAMMA., the cosine products .vertline..GAMMA..vertline. cos .theta., and the sine product .vertline..GAMMA..vertline. sin .theta. for controlling an automatic matching means, which includes three matching elements, each having an adjustable short-circuit length, disposed on the transmission line with a separation of odd number multiples of 1/8 of a wavelength along the transmission line. The first and third matching elements are connected such that in response to a change in the short-circulating length of one of the first and third matching elements, the short-circuiting length of the other of the first and third matching elements changes in a corresponding opposite manner. The first and third matching elements are both driven by either the cosine product output or the sine product output, and the second matching element is driven with the one of the cosine and sine product outputs which is not driving the first and third matching elements.
摘要翻译：一种用于微波的自动负载匹配电路，设置在信号源和负载之间的传输线上。用于检测行波分量和反射波分量并产生与反射系数GAMMA，余弦乘积| GAMMA |cosθ和正弦乘积| GAMMA |sinθ的绝对值相对应的输出的信号检测装置，用于控制自动匹配装置，其包括三个匹配元件，每个匹配元件具有可调节的短路长度，沿着传输线设置在传输线上，其中奇数倍数为1/8的奇数倍。第一和第三匹配元件被连接成使得响应于第一和第三匹配元件中的一个的短循环长度的变化，第一和第三匹配元件中的另一个的短路长度在相应的相反的方式。第一和第三匹配元件都由余弦乘积输出或正弦乘积输出驱动，第二匹配元件由没有驱动第一和第三匹配元件的余弦和正弦乘积输出之一驱动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式