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1. 发明申请

US20110094996A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110094996A1
公开(公告)日：2011-04-28
申请号：US12913162
申请日：2010-10-27
申请人： Yohei YAMAZAWA , Chishio KOSHIMIZU , Masashi SAITO , Kazuki DENPOH , Jun YAMAWAKU
发明人： Yohei YAMAZAWA , Chishio KOSHIMIZU , Masashi SAITO , Kazuki DENPOH , Jun YAMAWAKU
IPC分类号： C23F1/08 , C23C16/52 , C23C16/455 , C23C16/458 , C23C16/505 , C23F1/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32146 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

2. 发明申请

US20100243606A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100243606A1
公开(公告)日：2010-09-30
申请号：US12732711
申请日：2010-03-26
申请人： Chishio KOSHIMIZU , Yohei Yamazawa
发明人： Chishio KOSHIMIZU , Yohei Yamazawa
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32642
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a lower electrode for mounting a target substrate in the processing chamber; a focus ring attached to the lower electrode to cover at least a portion of a peripheral portion of the lower electrode; an upper electrode disposed to face the lower electrode in parallel in the processing chamber; a processing gas supply unit for supplying a processing gas to a processing space; and a radio frequency (RF) power supply for outputting an RF power. Further, the plasma processing apparatus includes a plasma generating RF power supply section for supplying the RF power to a first load for generating a plasma of the processing gas; and a focus ring heating RF power supply section for supplying the RF power to a second load for heating the focus ring.
摘要翻译：等离子体处理装置包括真空排气处理室; 用于将目标衬底安装在所述处理室中的下电极; 安装在下电极上的聚焦环，以覆盖下电极的周边部分的至少一部分; 设置成在所述处理室中与所述下电极平行地面对的上电极; 处理气体供应单元，用于将处理气体供应到处理空间; 以及用于输出RF功率的射频（RF）电源。此外，等离子体处理装置包括：等离子体产生RF电源部，用于将RF功率提供给用于产生处理气体的等离子体的第一负载; 以及聚焦环加热RF电源部分，用于将RF功率提供给用于加热聚焦环的第二负载。

3. 发明申请

US20120073781A1 TEMPERATURE CONTROL SYSTEM 有权
标题翻译：温度控制系统
公开(公告)号：US20120073781A1
公开(公告)日：2012-03-29
申请号：US13240274
申请日：2011-09-22
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： B60H1/00
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
摘要翻译：温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

4. 发明申请

US20120084045A1 TEMPERATURE MEASURING METHOD, STORAGE MEDIUM, AND PROGRAM 有权
标题翻译：温度测量方法，存储介质和程序
公开(公告)号：US20120084045A1
公开(公告)日：2012-04-05
申请号：US13248538
申请日：2011-09-29
申请人： Chishio KOSHIMIZU , Jun YAMAWAKU , Tatsuo MATSUDO
发明人： Chishio KOSHIMIZU , Jun YAMAWAKU , Tatsuo MATSUDO
IPC分类号： G01K11/00
CPC分类号： G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
摘要： Provided is a temperature measuring method which can accurately measure a temperature of an object to be measured compared to a conventional method, even if a thin film is formed on the object. The temperature measuring method includes: transmitting a light from a light source to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film based on an intensity of the second interference wave; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length, based on the calculated film thickness of the thin film; compensating for the optical path length from the first interference wave to the second interference wave based on the calculated optical path difference; and calculating a temperature of the object at the measurement point based on the compensated optical path length.
摘要翻译：提供一种温度测量方法，即使在物体上形成薄膜，也可以与以往的方法相比，能够精确地测定被测量物体的温度。温度测量方法包括：将来自光源的光传输到被测量物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 基于第二干涉波的强度计算薄膜的膜厚; 基于计算出的薄膜的膜厚度，计算基板的光路长度与算出的光程长度之间的光程差; 基于计算的光程差补偿从第一干涉波到第二干涉波的光路长度; 以及基于补偿的光程长度计算测量点处的物体的温度。

5. 发明申请

US20120063486A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20120063486A1
公开(公告)日：2012-03-15
申请号：US13231027
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01K11/12
CPC分类号： G01K11/12
摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.
摘要翻译：温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

6. 发明申请

US20120247954A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120247954A1
公开(公告)日：2012-10-04
申请号：US13432623
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU
IPC分类号： C23F4/00
CPC分类号： H01J37/32091 , H01J37/32642 , H01J37/32715
摘要： Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.
摘要翻译：公开了一种电容耦合等离子体蚀刻装置，其中围绕用于调节等离子体状态的放置台的基板放置区域设置聚焦环。环形绝缘构件沿着聚焦环安装在放置台的顶表面和聚焦环的底表面之间，传热构件安装在放置台的顶表面和焦点的底表面之间环在晶片的直径方向上在与绝缘构件相邻的位置处紧密附着到顶表面和底表面。在等离子体处理期间，聚焦环中的热量通过传热构件传递到放置台以被冷却，并且可以减少附着到晶片的后表面的沉积物的量。

7. 发明申请

US20120175063A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20120175063A1
公开(公告)日：2012-07-12
申请号：US13344267
申请日：2012-01-05
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32559 , H01J37/32642 , H01L21/68735
摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
摘要翻译：一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件，聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面在内聚焦环和外聚焦环之间。

8. 发明申请

US20120062870A1 PHYSICAL STATE MEASURING APPARATUS AND PHYSICAL STATE MEASURING METHOD 审中-公开
标题翻译：物理状态测量装置和物理状态测量方法
公开(公告)号：US20120062870A1
公开(公告)日：2012-03-15
申请号：US13231037
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01B9/02
CPC分类号： G01K11/125 , G01B9/02007 , G01B9/02021 , G01B9/02025 , G01B9/0209
摘要： The physical state measuring apparatus includes: a light source; a transmitting unit which transmits a light from the light source to a measurement point of an object to be measured; a nonlinear optical device which changes a wavelength of the light reflected by the measurement point to a wavelength that is different from the wavelength before the changing; a light receiving unit which receives the light whose wavelength has been changed; and a measuring unit which measures a physical state of the object to be measured at the measurement point based on a waveform of the light received by the light receiving unit.
摘要翻译：物理状态测量装置包括：光源; 发送单元，其将来自所述光源的光发送到待测量对象的测量点; 将由测量点反射的光的波长改变为与变化前的波长不同的波长的非线性光学装置; 接收波长已经改变的光的光接收单元; 以及测量单元，其基于由所述光接收单元接收的光的波形来测量所述测量点处的被测量物体的物理状态。

9. 发明申请

US20120251759A1 COMPONENT IN PROCESSING CHAMBER OF SUBSTRATE PROCESSING APPARATUS AND METHOD OF MEASURING TEMPERATURE OF THE COMPONENT 有权
标题翻译：基板处理装置的加工室中的部件和测量部件温度的方法
公开(公告)号：US20120251759A1
公开(公告)日：2012-10-04
申请号：US13432617
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
IPC分类号： B32B3/14 , G01K11/00 , B32B18/00 , B05C11/00 , B32B33/00
CPC分类号： G01K11/14 , G01K5/48 , H01L21/67248
摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
摘要翻译：在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度，等等。在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

10. 发明申请

US20120227955A1 SUBSTRATE TEMPERATURE CONTROL METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：基板温度控制方法和等离子体处理装置
公开(公告)号：US20120227955A1
公开(公告)日：2012-09-13
申请号：US13415354
申请日：2012-03-08
申请人： Chishio KOSHIMIZU
发明人： Chishio KOSHIMIZU
IPC分类号： G05D16/00 , H01L21/306
CPC分类号： G05D23/1919 , H01L21/67109 , H01L21/67248 , H01L21/67253
摘要： Provided are a substrate temperature control method and a plasma processing apparatus using the method. The method includes: disposing a substrate on a placing table provided in a vacuum processing chamber; supplying a heat conduction gas between a rear surface of the substrate and the placing table; detecting a pressure of the heat conduction gas; comparing the detected pressure value with a set pressure value; controlling the supply of the heat conduction gas so that the detected pressure value becomes the set pressure value; and alternately repeating a first period where the set pressure value is set to be a first set pressure value that is higher than a low pressure value and equal to or higher than the lowest limit pressure value and a second period where the set pressure value is set to be a second set pressure value that is lower than the low pressure value.
摘要翻译：提供了一种基板温度控制方法和使用该方法的等离子体处理装置。该方法包括：将基板设置在设置在真空处理室中的放置台上; 在所述基板的后表面和所述放置台之间提供导热气体; 检测导热气体的压力; 将检测到的压力值与设定压力值进行比较; 控制导热气体的供给，使检测的压力值成为设定压力值; 并且交替地重复设定压力值被设定为高于低压值且等于或高于最低限压值的第一设定压力值的第一时段和设定压力值设定的第二时段成为低于低压值的第二设定压力值。

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