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1. 发明申请

US20110094996A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110094996A1
公开(公告)日：2011-04-28
申请号：US12913162
申请日：2010-10-27
申请人： Yohei YAMAZAWA , Chishio KOSHIMIZU , Masashi SAITO , Kazuki DENPOH , Jun YAMAWAKU
发明人： Yohei YAMAZAWA , Chishio KOSHIMIZU , Masashi SAITO , Kazuki DENPOH , Jun YAMAWAKU
IPC分类号： C23F1/08 , C23C16/52 , C23C16/455 , C23C16/458 , C23C16/505 , C23F1/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32146 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

2. 发明申请

US20100243606A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100243606A1
公开(公告)日：2010-09-30
申请号：US12732711
申请日：2010-03-26
申请人： Chishio KOSHIMIZU , Yohei Yamazawa
发明人： Chishio KOSHIMIZU , Yohei Yamazawa
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32642
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a lower electrode for mounting a target substrate in the processing chamber; a focus ring attached to the lower electrode to cover at least a portion of a peripheral portion of the lower electrode; an upper electrode disposed to face the lower electrode in parallel in the processing chamber; a processing gas supply unit for supplying a processing gas to a processing space; and a radio frequency (RF) power supply for outputting an RF power. Further, the plasma processing apparatus includes a plasma generating RF power supply section for supplying the RF power to a first load for generating a plasma of the processing gas; and a focus ring heating RF power supply section for supplying the RF power to a second load for heating the focus ring.
摘要翻译：等离子体处理装置包括真空排气处理室; 用于将目标衬底安装在所述处理室中的下电极; 安装在下电极上的聚焦环，以覆盖下电极的周边部分的至少一部分; 设置成在所述处理室中与所述下电极平行地面对的上电极; 处理气体供应单元，用于将处理气体供应到处理空间; 以及用于输出RF功率的射频（RF）电源。此外，等离子体处理装置包括：等离子体产生RF电源部，用于将RF功率提供给用于产生处理气体的等离子体的第一负载; 以及聚焦环加热RF电源部分，用于将RF功率提供给用于加热聚焦环的第二负载。

3. 发明申请

US20120227955A1 SUBSTRATE TEMPERATURE CONTROL METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：基板温度控制方法和等离子体处理装置
公开(公告)号：US20120227955A1
公开(公告)日：2012-09-13
申请号：US13415354
申请日：2012-03-08
申请人： Chishio KOSHIMIZU
发明人： Chishio KOSHIMIZU
IPC分类号： G05D16/00 , H01L21/306
CPC分类号： G05D23/1919 , H01L21/67109 , H01L21/67248 , H01L21/67253
摘要： Provided are a substrate temperature control method and a plasma processing apparatus using the method. The method includes: disposing a substrate on a placing table provided in a vacuum processing chamber; supplying a heat conduction gas between a rear surface of the substrate and the placing table; detecting a pressure of the heat conduction gas; comparing the detected pressure value with a set pressure value; controlling the supply of the heat conduction gas so that the detected pressure value becomes the set pressure value; and alternately repeating a first period where the set pressure value is set to be a first set pressure value that is higher than a low pressure value and equal to or higher than the lowest limit pressure value and a second period where the set pressure value is set to be a second set pressure value that is lower than the low pressure value.
摘要翻译：提供了一种基板温度控制方法和使用该方法的等离子体处理装置。该方法包括：将基板设置在设置在真空处理室中的放置台上; 在所述基板的后表面和所述放置台之间提供导热气体; 检测导热气体的压力; 将检测到的压力值与设定压力值进行比较; 控制导热气体的供给，使检测的压力值成为设定压力值; 并且交替地重复设定压力值被设定为高于低压值且等于或高于最低限压值的第一设定压力值的第一时段和设定压力值设定的第二时段成为低于低压值的第二设定压力值。

4. 发明申请

US20120084045A1 TEMPERATURE MEASURING METHOD, STORAGE MEDIUM, AND PROGRAM 有权
标题翻译：温度测量方法，存储介质和程序
公开(公告)号：US20120084045A1
公开(公告)日：2012-04-05
申请号：US13248538
申请日：2011-09-29
申请人： Chishio KOSHIMIZU , Jun YAMAWAKU , Tatsuo MATSUDO
发明人： Chishio KOSHIMIZU , Jun YAMAWAKU , Tatsuo MATSUDO
IPC分类号： G01K11/00
CPC分类号： G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
摘要： Provided is a temperature measuring method which can accurately measure a temperature of an object to be measured compared to a conventional method, even if a thin film is formed on the object. The temperature measuring method includes: transmitting a light from a light source to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film based on an intensity of the second interference wave; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length, based on the calculated film thickness of the thin film; compensating for the optical path length from the first interference wave to the second interference wave based on the calculated optical path difference; and calculating a temperature of the object at the measurement point based on the compensated optical path length.
摘要翻译：提供一种温度测量方法，即使在物体上形成薄膜，也可以与以往的方法相比，能够精确地测定被测量物体的温度。温度测量方法包括：将来自光源的光传输到被测量物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 基于第二干涉波的强度计算薄膜的膜厚; 基于计算出的薄膜的膜厚度，计算基板的光路长度与算出的光程长度之间的光程差; 基于计算的光程差补偿从第一干涉波到第二干涉波的光路长度; 以及基于补偿的光程长度计算测量点处的物体的温度。

5. 发明申请

US20120063486A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20120063486A1
公开(公告)日：2012-03-15
申请号：US13231027
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01K11/12
CPC分类号： G01K11/12
摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.
摘要翻译：温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

6. 发明申请

US20110207245A1 STAGE, SUBSTRATE PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS, CONTROL METHOD FOR STAGE, CONTROL METHOD FOR PLASMA PROCESSING APPARATUS, AND STORAGE MEDIA 有权
标题翻译：阶段，基板处理装置，等离子体处理装置，阶段控制方法，等离子体处理装置的控制方法和储存介质
公开(公告)号：US20110207245A1
公开(公告)日：2011-08-25
申请号：US13097251
申请日：2011-04-29
申请人： Chishio KOSHIMIZU , Tomohiro Suzuki
发明人： Chishio KOSHIMIZU , Tomohiro Suzuki
IPC分类号： H01L21/465 , H01L21/66
CPC分类号： F27B17/0025 , F27B5/04 , G01K5/48 , G01K11/00 , H01L21/67248
摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.
摘要翻译：在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。温度测量装置200测量待处理的基板的温度。温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

7. 发明申请

US20110198315A1 PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20110198315A1
公开(公告)日：2011-08-18
申请号：US13093453
申请日：2011-04-25
申请人： Chishio KOSHIMIZU , Naoki Matsumoto
发明人： Chishio KOSHIMIZU , Naoki Matsumoto
IPC分类号： C23F1/00
CPC分类号： H01J37/32027 , H01J37/32091
摘要： A plasma processing method includes generating plasma in a processing chamber by supplying at least any of one or more electrodes provided in the processing chamber with a high-frequency power to process a substrate. The method includes applying the high-frequency power to at least any of the one or more electrodes, applying a direct-current voltage to at least any of the one or more electrodes, and previously adjusting the high-frequency power applied to the electrode at a timing when the apply of the direct-current voltage is started or terminated under a state in which the high-frequency power is applied to the electrode.
摘要翻译：等离子体处理方法包括通过向设置在处理室中的一个或多个电极中的至少任一个提供高频电力来处理衬底来在处理室中产生等离子体。所述方法包括将高频电力施加到所述一个或多个电极中的至少任一个，向所述一个或多个电极中的至少任一个施加直流电压，以及预先调整施加到所述电极的高频功率在向电极施加高频电力的状态下开始或终止直流电压的施加的定时。

8. 发明申请

US20090242135A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090242135A1
公开(公告)日：2009-10-01
申请号：US12410943
申请日：2009-03-25
申请人： Chishio KOSHIMIZU , Shinji Himori
发明人： Chishio KOSHIMIZU , Shinji Himori
IPC分类号： H01L21/3065
CPC分类号： H01J37/32541 , H01J37/32091 , H01J37/32568 , H01J37/32577
摘要： A plasma processing apparatus includes: a vacuum-evacuable processing chamber; a lower central electrode; a lower peripheral electrode surrounding the lower central electrode in an annular shape; an upper electrode provided to face the lower central electrode and the lower peripheral electrode; a processing gas supply unit for supplying a processing gas into the processing chamber; an RF power supply for outputting an RF power for generating a plasma; and a power feed conductor connected to a rear surface of the lower peripheral electrode to supply the RF power to the lower peripheral electrode. The apparatus further includes a variable capacitance coupling unit for electrically connecting the lower central electrode with at least one of the power feed conductor and the lower peripheral electrode by capacitance coupling with a variable impedance in order to supply a part of the RF power from the RF power supply to the lower central electrode.
摘要翻译：一种等离子体处理装置，包括：真空排空处理室; 下部中心电极; 围绕下部中心电极的下部周边电极为环状; 设置成面向下中央电极和下周边电极的上电极; 处理气体供应单元，用于将处理气体供应到处理室中; RF电源，用于输出用于产生等离子体的RF功率; 以及连接到下周边电极的后表面的供电导体，以向下周边电极提供RF功率。该装置还包括可变电容耦合单元，用于通过与可变阻抗的电容耦合来将下部中心电极与馈电导体和下部外围电极中的至少一个电连接，以便从RF提供RF功率的一部分向下中央电极供电。

9. 发明申请

US20080236749A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20080236749A1
公开(公告)日：2008-10-02
申请号：US12056665
申请日：2008-03-27
申请人： Chishio KOSHIMIZU , Naoki Matsumoto , Satoshi Tanaka , Toru Ito
发明人： Chishio KOSHIMIZU , Naoki Matsumoto , Satoshi Tanaka , Toru Ito
IPC分类号： H01L21/3065
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32155 , H01J37/32165 , H01J37/32348 , H01J37/32449 , H01J37/32467 , H01J37/32642 , H01J2237/21 , H01J2237/334
摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.
摘要翻译：等离子体处理装置包括处理室，第一电极和彼此相对配置的第二电极，用于向第一电极或第二电极施加高频电力的高频电源单元，用于将处理气体供给到处理空间，以及设置在第一电极的主表面上的基板安装部的主电介质部件。聚焦环安装在第一电极上以覆盖第一电极的主表面的周边部分，并且在第一电极的主表面的周边部分设置外围电介质构件，使得每单位面积的静电电容在第一电极和聚焦环之间的距离小于通过主电介质构件施加在第一电极和衬底之间的位置。

10. 发明申请

US20120243572A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20120243572A1
公开(公告)日：2012-09-27
申请号：US13428198
申请日：2012-03-23
申请人： Tatsuo MATSUDO , Chishio KOSHIMIZU
发明人： Tatsuo MATSUDO , Chishio KOSHIMIZU
IPC分类号： G01K11/32
CPC分类号： G01K11/12 , G01J5/0007 , G01J5/0044 , G01J5/0821 , G01J2005/583
摘要： A temperature measuring apparatus and a temperature measuring method that may simultaneously measure temperatures of objects in processing chambers. The temperature measuring apparatus includes a first light separating unit which divides light from the light source into measurement lights; second light separating units which divide the measurement lights from the first light separating unit into measurement lights and reference lights; third light separating units which further divide the measurement lights into first to n-th measurement lights; a reference light reflecting unit which reflects the reference lights; an light path length changing unit which changes light path lengths of the reference lights reflected by the reference light reflecting unit; and photodetectors which measure interference between the first to n-th measurement lights reflected by the objects to be measured and the reference lights reflected by the reference light reflecting unit.
摘要翻译：可以同时测量处理室中的物体的温度的温度测量装置和温度测量方法。温度测量装置包括：将来自光源的光分成测量光的第一光分离单元; 第二光分离单元，其将测量光从第一光分离单元分离成测量光和参考光; 第三光分离单元，其进一步将测量光分为第一至第n测量光; 反射参考光的参考光反射单元; 光路长度改变单元，改变由参考光反射单元反射的参考光的光路长度; 以及光检测器，其测量由被测量物体反射的第一至第n测量光与由参考光反射单元反射的参考光之间的干涉。

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