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1. 发明授权

US08138589B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08138589B2
公开(公告)日：2012-03-20
申请号：US12892381
申请日：2010-09-28
申请人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
发明人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
IPC分类号： H01L23/02
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

2. 发明申请

US20080265351A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080265351A1
公开(公告)日：2008-10-30
申请号：US12078196
申请日：2008-03-27
申请人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
发明人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

3. 发明授权

US07824950B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07824950B2
公开(公告)日：2010-11-02
申请号：US12078196
申请日：2008-03-27
申请人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
发明人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

4. 发明授权

US08227886B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08227886B2
公开(公告)日：2012-07-24
申请号：US12358449
申请日：2009-01-23
申请人： Hidekazu Takahashi , Yohei Monma , Daiki Yamada , Takahiro Iguchi , Kazuo Nishi
发明人： Hidekazu Takahashi , Yohei Monma , Daiki Yamada , Takahiro Iguchi , Kazuo Nishi
IPC分类号： H01L31/09
CPC分类号： H01L31/02162 , H01L25/0655 , H01L27/14621 , H01L27/14643 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface. The colors of the chromatic color light transmitting resin layers are different in each of the plurality of semiconductor integrated circuits.
摘要翻译：目的是通过半导体器件的外部应力来减少裂纹，裂纹和芯片的外观破损。另一个目的是提高薄半导体器件的制造成品率。半导体器件包括安装在插入器上的多个半导体集成电路。所述多个半导体集成电路中的每一个都包括透光基板，所述透光基板在所述侧表面具有台阶，并且所述透光基板的一部分的宽度比所述透光基板的另一部分的宽度窄，当所述光发送基板在包括该台阶的平面处被分割，包括设置在透光基板的一个表面上的光电转换元件的半导体元件层和覆盖透光基板的另一个表面的彩色透光树脂层和侧面的一部分。多色半导体集成电路中的彩色透光树脂层的颜色不同。

5. 发明授权

US08481370B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08481370B2
公开(公告)日：2013-07-09
申请号：US11498164
申请日：2006-08-03
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

6. 发明授权

US08415664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08415664B2
公开(公告)日：2013-04-09
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

7. 发明授权

US08053816B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08053816B2
公开(公告)日：2011-11-08
申请号：US11681638
申请日：2007-03-02
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触，并且其中滤色器的端部位于光电转换层的另一端部的内部。

8. 发明授权

US07180197B2 Semiconductor device containing stacked semiconductor chips and manufacturing method thereof 有权
标题翻译：含有层叠半导体芯片的半导体装置及其制造方法
公开(公告)号：US07180197B2
公开(公告)日：2007-02-20
申请号：US10951811
申请日：2004-09-29
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

9. 发明申请

US20050082655A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050082655A1
公开(公告)日：2005-04-21
申请号：US10951811
申请日：2004-09-29
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L27/14 , H01L21/60 , H01L23/12 , H01L23/498 , H01L27/146 , H01L31/0203 , H01L31/04 , H01L31/10 , H01L29/792
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

10. 发明申请

US20120086006A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120086006A1
公开(公告)日：2012-04-12
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

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