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    • 6. 发明授权
    • Method for making high speed, high areal density inductive write structure
    • 制造高速,高密度感应写入结构的方法
    • US07007372B1
    • 2006-03-07
    • US10656311
    • 2003-09-05
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • G11B5/127H04R31/00
    • G11B5/3146G11B5/3109G11B5/3113G11B5/3116G11B5/313G11B5/3153G11B5/3967Y10T29/49032Y10T29/49039Y10T29/49043Y10T29/49048Y10T29/49052Y10T29/49071Y10T29/49073
    • An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
    • 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩(高B sat sat)材料构成的基座,其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括一高层高层材料的薄层(也优选具有CoZrCr叠层的FeRhN纳米晶膜),其余部分由能够电镀的磁性材料构成,例如Ni -Fe合金。 导电线圈通过第一和第二极之间的磁轭,当电流流过线圈时,引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场,由此可以将信号传递到通过的磁介质上。
    • 7. 发明授权
    • High speed, high areal density inductive writer
    • 高速,高密度感应写入器
    • US06618223B1
    • 2003-09-09
    • US09617791
    • 2000-07-18
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • G11B5147
    • G11B5/3146G11B5/3109G11B5/3113G11B5/3116G11B5/313G11B5/3153G11B5/3967Y10T29/49032Y10T29/49039Y10T29/49043Y10T29/49048Y10T29/49052Y10T29/49071Y10T29/49073
    • An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
    • 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩(高Bsat)材料构成的基座,其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括具有高Bsat材料的薄内层(还优选具有CoZrCr层压层的FeRhN纳米晶膜),其余部分由能够电镀的磁性材料如Ni-Fe合金构成。 导电线圈通过第一和第二极之间的磁轭,当电流流过线圈时,引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场,由此可以将信号传递到通过的磁介质上。
    • 8. 发明授权
    • Method for providing pedestal-defined zero throat writer
    • 提供基座定义零喉作家的方法
    • US06785955B1
    • 2004-09-07
    • US09769060
    • 2001-01-23
    • Yingjian ChenHugh Craig HinerBenjamin ChenXizeng ShiKyusik Sin
    • Yingjian ChenHugh Craig HinerBenjamin ChenXizeng ShiKyusik Sin
    • H04R3100
    • G11B5/3967G11B5/3109Y10T29/49032Y10T29/49041Y10T29/49043Y10T29/49044Y10T29/49048Y10T29/49052Y10T29/49062
    • A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer. In this aspect, the first insulator has a depression therein and the coil is provided on the depression.
    • 公开了一种用于提供写入器的方法和系统。 该方法和系统包括提供第一极,覆盖第一极的一部分的绝缘体和第一绝缘体上的线圈。 线圈包括多个匝。 该方法和系统还包括提供覆盖线圈的第二绝缘体,在第二绝缘体上提供第二极,并提供将第一极的一部分与第二极的第二部分分开的写间隙。 第二极的第一部分与第一极耦合。 在一个方面,该方法和系统包括提供具有不超过1.2微米的间距的多个匝的线圈。 在另一方面,使用光致抗蚀剂层上的硬掩模层来提供线圈的多圈。 硬掩模层的一部分和光致抗蚀剂层的一部分在线圈的多圈之间限定多个空间。 在另一方面,作者是一个基座定义的零喉作家。 在这方面,第一绝缘体具有凹陷,线圈设置在凹部上。
    • 10. 发明授权
    • Reference cell scheme for MRAM
    • MRAM参考单元方案
    • US07499314B2
    • 2009-03-03
    • US12002161
    • 2007-12-14
    • Hsu Kai YangPo-Kang WangXizeng Shi
    • Hsu Kai YangPo-Kang WangXizeng Shi
    • G11C11/00
    • G11C7/14G11C11/16
    • An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.
    • MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态,并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时,并行放置一对配对的MRAM参考单元,以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。