专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140252411A1 LOW VOLTAGE AVALANCHE PHOTODIODE WITH RE-ENTRANT MIRROR FOR SILICON BASED PHOTONIC INTEGRATED CIRCUITS 有权
标题翻译：具有基于硅的光电集成电路的带有反射镜的低电压AVALANCHE光电
公开(公告)号：US20140252411A1
公开(公告)日：2014-09-11
申请号：US13976369
申请日：2013-03-11
申请人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
发明人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
IPC分类号： H01L31/028 , H01L31/0232 , H01L31/107 , H01L31/18 , H01L31/105
CPC分类号： H01L31/028 , G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/30 , H01L31/02327 , H01L31/105 , H01L31/107 , H01L31/1804 , Y02E10/547
摘要： A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.
摘要翻译：低电压APD设置在在PIC芯片的硅器件层内横向延伸的波导的端部。 APD布置在共同位于波导端部的倒置反射镜上，以将光从波导的内部反射耦合到APD的下侧。在示例性实施例中，通过晶体蚀刻在硅器件层中形成45°-55°刻面。在实施例中，APD包括硅倍增层，乘法层上的锗吸收层以及设置在吸收层上的多个欧姆接触。覆盖的光反射金属膜互连多个欧姆接触并将在欧姆接触周围传输的光返回到吸收层，以提高检测器响应度。

2. 发明授权

US09761746B2 Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits 有权
公开(公告)号：US09761746B2
公开(公告)日：2017-09-12
申请号：US13976369
申请日：2013-03-11
申请人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
发明人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
IPC分类号： H01S5/02 , H01L31/107 , H01L31/028 , H01L31/0232 , G02B6/26 , H01L35/24 , G02B6/12 , H01L31/105 , H01L31/18
CPC分类号： H01L31/028 , G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/30 , H01L31/02327 , H01L31/105 , H01L31/107 , H01L31/1804 , Y02E10/547
摘要： A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

3. 发明申请

US20170336565A1 SINGLE MODE OPTICAL COUPLER 审中-公开
公开(公告)号：US20170336565A1
公开(公告)日：2017-11-23
申请号：US15282728
申请日：2016-09-30
申请人： Judson D. Ryckman , Harel Frish , George A. Ghiurcan , Ansheng Liu , Haisheng Rong , Pradeep Srinivasan , Carsten Brandt , Isako Hoshino , Michael A. Creighton
发明人： Judson D. Ryckman , Harel Frish , George A. Ghiurcan , Ansheng Liu , Haisheng Rong , Pradeep Srinivasan , Carsten Brandt , Isako Hoshino , Michael A. Creighton
IPC分类号： G02B6/14 , G02B1/115 , G02B6/122 , G02B6/136 , G02B6/12
CPC分类号： G02B6/14 , G02B1/115 , G02B6/1228 , G02B6/136 , G02B2006/12097 , G02B2006/12104 , G02B2006/12147 , G02B2006/12157
摘要： Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

4. 发明申请

US20140008750A1 PHOTONIC DEVICE WITH A CONDUCTIVE SHUNT LAYER 有权
标题翻译：具有导电分层的光电器件
公开(公告)号：US20140008750A1
公开(公告)日：2014-01-09
申请号：US13977390
申请日：2012-03-29
申请人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
发明人： Avi Feshali , Tao Sherry Yin , Ansheng Liu
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0232 , H01L31/02325 , H01L31/10 , H01L31/102 , H01L31/18
摘要： Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.
摘要翻译：描述了包括具有导电分流层的光子器件的装置和系统的实施例，以及用于制造这种装置和系统的方法。光子器件可以包括器件衬底，设置在器件衬底的第一区域上的光有源区，器件衬底中的隔离区，设置在衬底的第二区上的接触，使得隔离区位于所述接触和所述光活性区域以及覆盖所述隔离区域的导电材料以与所述第二区域分流所述第一区域。可以描述和/或要求保护其他实施例。

5. 发明申请

US20120018744A1 HIGH SPEED, WIDE OPTICAL BANDWIDTH, AND HIGH EFFICIENCY RESONANT CAVITY ENHANCED PHOTO-DETECTOR 有权
标题翻译：高速，宽光束带宽和高效率共振孔增强型光电探测器
公开(公告)号：US20120018744A1
公开(公告)日：2012-01-26
申请号：US12842341
申请日：2010-07-23
申请人： Olufemi I. Dosunmu , Ansheng Liu
发明人： Olufemi I. Dosunmu , Ansheng Liu
IPC分类号： H01L31/12 , H01L31/0232
CPC分类号： H01L31/02165 , H01L31/103
摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.
摘要翻译：一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。

6. 发明授权

US07747122B2 Method and apparatus for high speed silicon optical modulation using PN diode 有权
标题翻译：使用PN二极管的高速硅光调制方法和装置
公开(公告)号：US07747122B2
公开(公告)日：2010-06-29
申请号：US12242454
申请日：2008-09-30
申请人： Yoel Shetrit , Ling Liao , Ansheng Liu
发明人： Yoel Shetrit , Ling Liao , Ansheng Liu
IPC分类号： G02B6/10 , G02F1/01
CPC分类号： G02B6/12004 , G02B2006/12142 , G02F1/025 , G02F1/225 , G02F1/2257
摘要： A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.
摘要翻译：使用PN二极管描述用于高速硅光调制的方法和装置。在一个示例中，光波导具有邻接的第一和第二掺杂半导体区域。第一和第二区域具有相反的掺杂类型，并且第一掺杂区域在两个垂直方向上延伸穿过波导。

7. 发明申请

US20070280309A1 Optical waveguide with single sided coplanar contact optical phase modulator 审中-公开
标题翻译：具有单面共面接触光学相位调制器的光波导
公开(公告)号：US20070280309A1
公开(公告)日：2007-12-06
申请号：US11439769
申请日：2006-05-23
申请人： Ansheng Liu
发明人： Ansheng Liu
IPC分类号： H01S3/10
CPC分类号： G02F1/025
摘要： An apparatus and method for high speed phase modulation of optical beam. For one embodiment, an apparatus includes an optical waveguide having adjoining first and second regions disposed in semiconductor material. The first and second regions have opposite first and second doping types, respectively. First, second and third higher doped regions of semiconductor material outside an optical path of the optical waveguide are also included. The first higher doped region has the first doping type and the second and third higher doped regions have the second doping type. The first, second and third higher doped regions have higher doping concentrations than doping concentrations within the optical path of the optical waveguide. The second and third higher doped regions are symmetrically adjoining and coupled to respective opposite lateral sides of the second region. The first higher doped region is asymmetrically adjoining and coupled to only one of two opposite lateral sides of the first region. First, second and third coplanar contacts are also included and are coupled to the first, second and third higher doped regions, respectively.
摘要翻译：一种用于光束高速相位调制的装置和方法。对于一个实施例，一种装置包括具有设置在半导体材料中的邻接的第一和第二区域的光波导。第一和第二区域分别具有相反的第一和第二掺杂类型。还包括在光波导的光路外的半导体材料的第一，第二和第三较高掺杂区域。第一高掺杂区域具有第一掺杂类型，第二和第三较高掺杂区域具有第二掺杂类型。第一，第二和第三较高掺杂区具有比光波导的光路内的掺杂浓度更高的掺杂浓度。第二和第三较高掺杂区域对称地邻接并耦合到第二区域的相应的相对侧面。第一较高掺杂区域不对称地毗邻并且仅耦合到第一区域的两个相对的横向侧面中的一个。首先，还包括第二和第三共面接触并分别耦合到第一，第二和第三较高掺杂区域。

8. 发明授权

US07116847B2 Method and apparatus for polarization insensitive phase shifting of an optical beam in an optical device 有权
公开(公告)号：US07116847B2
公开(公告)日：2006-10-03
申请号：US11205409
申请日：2005-08-16
申请人： Ansheng Liu , Richard Jones , Mario J. Paniccia , Graham T. Reed
发明人： Ansheng Liu , Richard Jones , Mario J. Paniccia , Graham T. Reed
IPC分类号： G02F1/295
CPC分类号： G02F1/025 , G02F2203/06
摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.

9. 发明申请

US20060215726A1 Integrated optical detector in semiconductor reflector 有权
标题翻译：集成光检测器在半导体反射器
公开(公告)号：US20060215726A1
公开(公告)日：2006-09-28
申请号：US11092059
申请日：2005-03-28
申请人： Andrew Alduino , Mario Paniccia , Rami Cohen , Assia Barkai , Ansheng Liu
发明人： Andrew Alduino , Mario Paniccia , Rami Cohen , Assia Barkai , Ansheng Liu
IPC分类号： H01S3/08
CPC分类号： G02B6/4246 , G02B6/4214 , G02B2006/12104
摘要： An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.
摘要翻译：电光耦合和检测装置。根据本发明实施例的装置包括限定在半导体材料上的反射表面。反射表面是将入射光束反射到光学目的地。光学检测器单片集成在半导体材料的反射表面中。布置在半导体材料的反射表面中的光学检测器是检测入射光束。

10. 发明申请

US20050265679A1 Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier 有权
标题翻译：半导体半导体激光和放大器的半导体波导中双光子吸收产生载流子寿命减少
公开(公告)号：US20050265679A1
公开(公告)日：2005-12-01
申请号：US10933652
申请日：2004-09-02
申请人： Ansheng Liu , Mario Paniccia , Haisheng Rong
发明人： Ansheng Liu , Mario Paniccia , Haisheng Rong
IPC分类号： G02B6/12 , G02B6/122 , G02B6/26
CPC分类号： G02B6/122 , G02B2006/12097 , H01S3/063 , H01S3/083 , H01S3/0941 , H01S3/30
摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.
摘要翻译：具有降低的双光子吸收的半导体基拉曼激光器和/或放大器产生载流子寿命。根据本发明的实施例的装置包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。光波导将耦合到泵激光器以接收具有第一波长和第一功率电平的第一光束，以导致在半导体波导中发射第二波长的第二光束。二极管结构被偏置以从响应于光波导中的两个光子吸收而产生的光波导扫出自由载流子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式