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1. 发明授权

US09761746B2 Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits 有权
公开(公告)号：US09761746B2
公开(公告)日：2017-09-12
申请号：US13976369
申请日：2013-03-11
申请人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
发明人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
IPC分类号： H01S5/02 , H01L31/107 , H01L31/028 , H01L31/0232 , G02B6/26 , H01L35/24 , G02B6/12 , H01L31/105 , H01L31/18
CPC分类号： H01L31/028 , G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/30 , H01L31/02327 , H01L31/105 , H01L31/107 , H01L31/1804 , Y02E10/547
摘要： A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

2. 发明授权

US07683397B2 Semi-planar avalanche photodiode 失效
标题翻译：半平面雪崩光电二极管
公开(公告)号：US07683397B2
公开(公告)日：2010-03-23
申请号：US11490994
申请日：2006-07-20
申请人： Gadi Sarid , Yimin Kang , Alexandre Pauchard
发明人： Gadi Sarid , Yimin Kang , Alexandre Pauchard
IPC分类号： H01L31/0336
CPC分类号： H01L31/1075 , H01L31/028 , H01L31/035281 , Y02E10/547
摘要： An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.
摘要翻译：公开了一种雪崩光电探测器。根据本发明的方面的装置包括在第一类型的半导体中限定的台面结构。第一类型的半导体材料包括光学耦合以接收和吸收光束的吸收区域。该装置还包括靠近并与台面结构分离并且在第二类型的半导体材料中限定的平面区域。平面区域包括包括邻接n掺杂区域的p掺杂区域的乘法区域，以在乘法区域中产生高电场。高电场是对接收在台面结构中的光束的吸收进行响应而产生的电荷载流子。

3. 发明申请

US20140151839A1 AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE 有权
标题翻译：具有低断电压的AVALANCHE光电二极管
公开(公告)号：US20140151839A1
公开(公告)日：2014-06-05
申请号：US13976379
申请日：2011-12-29
申请人： Yimin Kang , Han-Din Liu
发明人： Yimin Kang , Han-Din Liu
IPC分类号： H01L33/00
CPC分类号： H01L33/0012 , H01L31/035272 , H01L31/1075
摘要： An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.
摘要翻译：具有低击穿电压特性的Si / Ge SACM雪崩光电二极管（APD）包括吸收区域和具有特定厚度和掺杂浓度的各种层的乘法区域。光波导可以将红外和/或光信号或能量引入吸收区域。所得到的光生载流子被扫描到i-Si层和/或用于雪崩倍增的乘法区域中。 APD具有良好小于12V的击穿偏置电压和大于10GHz的工作带宽，因此适用于消费电子设备，高速通信网络等。

4. 发明申请

US20140077327A1 MONOLITHIC THREE TERMINAL PHOTODETECTOR 有权
标题翻译：单声道三端子光电摄影机
公开(公告)号：US20140077327A1
公开(公告)日：2014-03-20
申请号：US13899896
申请日：2013-05-22
申请人： Yun-chung N. NA , Yimin KANG
发明人： Yun-chung N. NA , Yimin KANG
IPC分类号： H01L31/02 , H01L31/105
CPC分类号： H01L31/02005 , G02B6/4295 , G02B2006/12097 , H01L31/028 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.
摘要翻译：光电检测器可操作以实现超低电压下的光生载流子的倍增。实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。两个p-i-n结构可以共享p型区域或n型区域作为第一端子。掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

5. 发明授权

US08461624B2 Monolithic three terminal photodetector 有权
标题翻译：单片三端子光电探测器
公开(公告)号：US08461624B2
公开(公告)日：2013-06-11
申请号：US12952023
申请日：2010-11-22
申请人： Yun-chung N Na , Yimin Kang
发明人： Yun-chung N Na , Yimin Kang
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L31/02005 , G02B6/4295 , G02B2006/12097 , H01L31/028 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.
摘要翻译：光电检测器可操作以实现超低电压下的光生载流子的倍增。实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。两个p-i-n结构可以共享p型区域或n型区域作为第一端子。掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

6. 发明申请

US20150037048A1 LOW VOLTAGE PHOTODETECTORS 有权
标题翻译：低电压照相机
公开(公告)号：US20150037048A1
公开(公告)日：2015-02-05
申请号：US14129181
申请日：2013-08-02
申请人： Yun-Chung Na , Han-Din Liu , Yimin Kang , Shu-Lu Chen
发明人： Yun-Chung Na , Han-Din Liu , Yimin Kang , Shu-Lu Chen
IPC分类号： H01L31/0216 , H01L31/0224 , H04B10/60 , H01L31/0232 , H01L31/108 , H01L31/18 , H01L31/107 , H01L31/028
CPC分类号： H01L31/02161 , G02B6/12004 , H01L31/022408 , H01L31/02327 , H01L31/028 , H01L31/03529 , H01L31/107 , H01L31/1085 , H01L31/1868 , H01L31/1872 , H04B10/60 , Y02E10/547 , Y02P70/521
摘要： A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a waveguide extending laterally within a photonic integrated circuit (PIC) chip. In exemplary embodiments where the device layer is formed over an insulator layer, the insulator layer is removed to expose a surface of the semiconductor device layer and a passivation material formed as a replacement for the insulator layer within high field regions. In further embodiments, controlled avalanche gain is achieved by spacing electrodes in a metal-semiconductor-metal (MSM) architecture, or complementary doped regions in a p-i-n architecture, to provide a field strength sufficient for impact ionization over a distance not significantly more than an order of magnitude greater than the distance that a carrier must travel so as to acquire sufficient energy for impact ionization.
摘要翻译：包括可以是Ge的半导体器件层的低电压光电检测器结构设置在衬底半导体上，衬底半导体可以是Si，例如在光子集成电路（PIC）芯片内横向延伸的波导的一部分内。在其中器件层形成在绝缘体层上的示例性实施例中，去除绝缘体层以暴露半导体器件层的表面和形成为高场区域内的绝缘体层的替代物的钝化材料。在另外的实施例中，受控的雪崩增益通过在金属 - 半导体 - 金属（MSM）结构中的电极间隔或引脚结构中的互补掺杂区域间隔来实现，以提供足够的冲击电离的场强，该距离不大于数量级大于载体必须行进的距离，以获得足够的能量进行冲击电离。

7. 发明申请

US20140252411A1 LOW VOLTAGE AVALANCHE PHOTODIODE WITH RE-ENTRANT MIRROR FOR SILICON BASED PHOTONIC INTEGRATED CIRCUITS 有权
标题翻译：具有基于硅的光电集成电路的带有反射镜的低电压AVALANCHE光电
公开(公告)号：US20140252411A1
公开(公告)日：2014-09-11
申请号：US13976369
申请日：2013-03-11
申请人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
发明人： Yimin Kang , Han-Din D. Liu , Ansheng Liu
IPC分类号： H01L31/028 , H01L31/0232 , H01L31/107 , H01L31/18 , H01L31/105
CPC分类号： H01L31/028 , G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/30 , H01L31/02327 , H01L31/105 , H01L31/107 , H01L31/1804 , Y02E10/547
摘要： A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.
摘要翻译：低电压APD设置在在PIC芯片的硅器件层内横向延伸的波导的端部。 APD布置在共同位于波导端部的倒置反射镜上，以将光从波导的内部反射耦合到APD的下侧。在示例性实施例中，通过晶体蚀刻在硅器件层中形成45°-55°刻面。在实施例中，APD包括硅倍增层，乘法层上的锗吸收层以及设置在吸收层上的多个欧姆接触。覆盖的光反射金属膜互连多个欧姆接触并将在欧姆接触周围传输的光返回到吸收层，以提高检测器响应度。

8. 发明申请

US20140231946A1 WAVEGUIDE AVALANCHE PHOTODETECTORS 有权
标题翻译：波兰AVALANCHE光电
公开(公告)号：US20140231946A1
公开(公告)日：2014-08-21
申请号：US13695553
申请日：2011-11-02
申请人： Yimin Kang , Zhihong Connie Huang , Han-Din Dean Liu , Yuval Saado , Yun-Chung Neil Na
发明人： Yimin Kang , Zhihong Connie Huang , Han-Din Dean Liu , Yuval Saado , Yun-Chung Neil Na
IPC分类号： H01L31/0232 , H01L31/028 , H01L31/107
CPC分类号： H01L31/02327 , H01L31/028 , H01L31/107
摘要： Devices comprised of end-on waveguide-coupled photodetectors are described. in embodiments of the invention, the pbotodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide comprises an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicin/germanium avalanche photodiodes.
摘要翻译：描述了由末端波导耦合光电探测器组成的器件。在本发明的实施例中，pbotodetectors是连接到波导上的雪崩光电二极管。波导包括靠近耦合的光电检测器的绝缘沟槽。在本发明的实施方案中，雪崩光电二极管是硅/锗雪崩光电二极管。

9. 发明申请

US20080017883A1 Semi-planar avalanche photodiode 失效
标题翻译：半平面雪崩光电二极管
公开(公告)号：US20080017883A1
公开(公告)日：2008-01-24
申请号：US11490994
申请日：2006-07-20
申请人： Gadi Sarid , Yimin Kang , Alexandre Pauchard
发明人： Gadi Sarid , Yimin Kang , Alexandre Pauchard
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1075 , H01L31/028 , H01L31/035281 , Y02E10/547
摘要： An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.
摘要翻译：公开了一种雪崩光电探测器。根据本发明的方面的装置包括在第一类型的半导体中限定的台面结构。第一类型的半导体材料包括光学耦合以接收和吸收光束的吸收区域。该装置还包括靠近并与台面结构分离并且在第二类型的半导体材料中限定的平面区域。平面区域包括包括邻接n掺杂区域的p掺杂区域的乘法区域，以在乘法区域中产生高电场。高电场是对接收在台面结构中的光束的吸收进行响应而产生的电荷载流子。

10. 发明授权

US09614119B2 Avalanche photodiode with low breakdown voltage 有权
公开(公告)号：US09614119B2
公开(公告)日：2017-04-04
申请号：US13976379
申请日：2011-12-29
申请人： Yimin Kang , Han-Din Liu
发明人： Yimin Kang , Han-Din Liu
IPC分类号： H01L31/107 , H01L33/00 , H01L31/0352
CPC分类号： H01L33/0012 , H01L31/035272 , H01L31/1075
摘要： An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

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